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Central Semiconductor Corp |
MOSFET N-CH 60V 0.115A SOT-23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 115mA (Tc) | 5V, 10V | 7.5 Ohm @ 500mA, 10V | 2.5V @ 250µA | - | 40V | 50pF @ 25V | - | 350mW (Ta) | -65°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Central Semiconductor Corp |
MOSFET NCH 60V 0.3A SOT883 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 2.5V, 10V | 1.4 Ohm @ 500mA, 10V | 2V @ 250µA | 0.5nC @ 4.5V | 20V | 50pF @ 25V | - | 100mW (Ta) | -65°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-883L | SC-101, SOT-883 |
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Central Semiconductor Corp |
MOSFET N-CH 60V 0.28A SOT-23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 280mA (Ta) | 5V, 10V | 2 Ohm @ 500mA, 10V | 2.5V @ 250µA | - | 40V | 50pF @ 25V | - | 350mW (Ta) | -65°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Central Semiconductor Corp |
MOSFET N-CH 60V 0.28A SOT-23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 1A (Ta) | 5V, 10V | 220 mOhm @ 500mA, 10V | 2.3V @ 250µA | 2.3nC @ 4.5V | 20V | 240pF @ 25V | - | 350mW (Ta) | -65°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Central Semiconductor Corp |
MOSFET N-CH 30V 0.45A SOT523 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 450mA (Ta) | 1.8V, 4.5V | 460 mOhm @ 200mA, 4.5V | 1V @ 250µA | 0.79nC @ 4.5V | 8V | 45pF @ 25V | - | 250mW (Ta) | -65°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-523 | SOT-523 |
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Central Semiconductor Corp |
MOSFET N-CH 100V 2A SOT-89 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 2A (Ta) | 4.5V, 10V | 300 mOhm @ 2A, 10V | 2.5V @ 250µA | 6nC @ 5V | 20V | 550pF @ 25V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-89 | TO-243AA |
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Central Semiconductor Corp |
MOSFET P-CH 20V 0.1A SOT883 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.5V, 4V | 8 Ohm @ 10mA, 4V | 1.1V @ 250µA | 0.66nC @ 4.5V | 10V | 45pF @ 3V | - | 100mW (Ta) | -65°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-883VL | SC-101, SOT-883 |
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Central Semiconductor Corp |
MOSFET N-CH 30V 0.45A SOT883 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 450mA (Ta) | 1.8V, 4.5V | 460 mOhm @ 200mA, 4.5V | 1V @ 250µA | 0.79nC @ 4.5V | 8V | 43pF @ 25V | - | 100mW (Ta) | -65°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-883VL | SC-101, SOT-883 |
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Central Semiconductor Corp |
MOSFET P-CH 30V 450MA SOT523 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 450mA (Ta) | 1.8V, 4.5V | 1.1 Ohm @ 430mA, 4.5V | 1V @ 250µA | 0.88nC @ 4.5V | 8V | 55pF @ 25V | - | 250mW (Ta) | -65°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-523 | SOT-523 |
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Central Semiconductor Corp |
MOSFET N-CH 100V 3A SOT-223 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 3A (Ta) | 10V | 150 mOhm @ 2A, 10V | 4V @ 250µA | 15nC @ 10V | 20V | 975pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-223 | TO-261-4, TO-261AA |
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Central Semiconductor Corp |
MOSFET P-CH 40V 6A SOT-89 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 40V | 6A (Ta) | 4.5V, 10V | 65 mOhm @ 6A, 10V | 3V @ 250µA | 6.5nC @ 4.5V | 25V | 750pF @ 25V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-89 | TO-243AA |
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Central Semiconductor Corp |
MOSFET P-CH 20V 0.1A SOT523 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.5V, 4V | 8 Ohm @ 10mA, 4V | 1.1V @ 250µA | 0.66nC @ 4.5V | 10V | 45pF @ 3V | - | 250mW (Ta) | -65°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-523 | SOT-523 |
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Central Semiconductor Corp |
MOSFET P-CH 20V 0.86A SOT563 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 860mA (Ta) | 1.8V, 4.5V | 150 mOhm @ 950mA, 4.5V | 1V @ 250µA | 3.56nC @ 4.5V | 8V | 200pF @ 16V | - | 350mW (Ta) | -65°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-563 | SOT-563, SOT-666 |
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Central Semiconductor Corp |
MOSFET N-CH 800V 12A |
в производстве | N-Channel | MOSFET (Metal Oxide) | 800V | 12A (Ta) | 10V | 450 mOhm @ 6A, 10V | 4V @ 250µA | 52.4nC @ 10V | 30V | 1090pF @ 100V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Central Semiconductor Corp |
MOSFET N-CH 20V 0.1A SOT883 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.5V, 4V | 3 Ohm @ 10mA, 4V | 900mV @ 250µA | 0.57nC @ 4.5V | 10V | 9pF @ 3V | - | 100mW (Ta) | -65°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-883VL | SC-101, SOT-883 |
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Central Semiconductor Corp |
MOSFET N-CH 60V 0.115A SOT-23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 115mA (Tc) | 5V, 10V | 7.5 Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.59nC @ 4.5V | 40V | 50pF @ 25V | - | 350mW (Ta) | -65°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Central Semiconductor Corp |
MOSFET P-CH 30V 0.45A SOT883 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 450mA (Ta) | 1.8V, 4.5V | 1.1 Ohm @ 430mA, 4.5V | 1V @ 250µA | 0.88nC @ 4.5V | 8V | 55pF @ 25V | - | 100mW (Ta) | -65°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-883VL | SC-101, SOT-883 |
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Central Semiconductor Corp |
MOSFET N-CH 50V 280MA SOT23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 50V | 280mA (Ta) | 1.8V, 10V | 2 Ohm @ 50mA, 5V | 1V @ 250µA | 0.76nC @ 4.5V | 12V | 50pF @ 25V | - | 350mW (Ta) | -65°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Central Semiconductor Corp |
MOSFET N-CH 20V 0.16A TLM3D6D8 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 20V | 160mA (Ta) | 1.2V, 4.5V | 3 Ohm @ 100mA, 4.5V | 1V @ 250µA | 0.46nC @ 4.5V | 8V | 9pF @ 15V | - | 125mW (Ta) | -65°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TLM3D6D8 | 3-XFDFN |
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Central Semiconductor Corp |
MOSFET P-CH 20V 0.14A TLM3D6D8 |
устарелый | P-Channel | MOSFET (Metal Oxide) | 20V | 140mA (Ta) | 1.2V, 4.5V | 5 Ohm @ 100mA, 4.5V | 1V @ 250µA | 0.5nC @ 4.5V | 8V | 10pF @ 15V | - | 125mW (Ta) | -65°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TLM3D6D8 | 3-XFDFN |
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Central Semiconductor Corp |
MOSFET N-CH 20V 0.1A SOT-883 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.5V, 4V | 3 Ohm @ 10mA, 4V | 900mV @ 250µA | 0.57nC @ 4.5V | 10V | 9pF @ 3V | - | 100mW (Ta) | -65°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-883 | SC-101, SOT-883 |
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Central Semiconductor Corp |
MOSFET P-CH 20V 0.1A SOT-883 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.5V, 4V | 8 Ohm @ 10mA, 4V | 1.1V @ 250µA | 0.66nC @ 4.5V | 10V | 45pF @ 3V | - | 100mW (Ta) | -65°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-883 | SC-101, SOT-883 |
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Central Semiconductor Corp |
MOSFET N-CH 8.0V 3.56A SOT-883 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 1.78A (Ta) | 1.8V, 4.5V | 460 mOhm @ 200mA, 4.5V | 1V @ 250µA | 0.79nC @ 4.5V | 8V | 43pF @ 25V | - | 100mW (Ta) | -65°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-883 | SC-101, SOT-883 |
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Central Semiconductor Corp |
MOSFET N-CH 30V 11A 8SOIC |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 20 mOhm @ 11A, 10V | 3V @ 250µA | 6.3nC @ 5V | 20V | 860pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Central Semiconductor Corp |
MOSFET N-CH 20V 0.1A SOT-523 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.5V, 4V | 3 Ohm @ 10mA, 4V | 900mV @ 250µA | 0.57nC @ 4.5V | 10V | 9pF @ 3V | - | 250mW (Ta) | -65°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-523 | SC-89, SOT-490 |
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Central Semiconductor Corp |
MOSFET P-CH 20V 0.86A SOT563 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 860mA (Ta) | 1.8V, 4.5V | 150 mOhm @ 950mA, 4.5V | 1V @ 250µA | 3.56nC @ 4.5V | 8V | 200pF @ 16V | - | 150mW (Ta) | -65°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-563 | SOT-563, SOT-666 |
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Central Semiconductor Corp |
MOSFET N-CH 20V 1A SOT563 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 1A (Ta) | 1.5V, 4V | 100 mOhm @ 500mA, 4.5V | 1.2V @ 1mA | 2.4nC @ 4.5V | 8V | 220pF @ 10V | - | 150mW (Ta) | -65°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-563 | SOT-563, SOT-666 |
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Central Semiconductor Corp |
MOSFET N-CH 20V 650MA SOT523 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 650mA (Ta) | 1.5V, 4.5V | 230 mOhm @ 600mA, 4.5V | 1.1V @ 250µA | 1.58nC @ 4.5V | 8V | 100pF @ 16V | - | 300mW (Ta) | -65°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-523 | SOT-523 |
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Central Semiconductor Corp |
MOSFET P-CH 20V 650MA SOT523 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 650mA (Ta) | 1.8V, 4.5V | 360 mOhm @ 350mA, 4.5V | 1V @ 250µA | 1.2nC @ 4.5V | 8V | 100pF @ 16V | - | 300mW (Ta) | -65°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-523 | SOT-523 |
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Central Semiconductor Corp |
MOSFET N-CH 20V 1A |
устарелый | N-Channel | MOSFET (Metal Oxide) | 20V | 1A (Ta) | 1.5V, 4.5V | 100 mOhm @ 500mA, 4.5V | 1.2V @ 1mA | 2.4nC @ 4.5V | 8V | 220pF @ 10V | - | 1.6W (Ta) | -65°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TLM621H | 6-XFDFN Exposed Pad |
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Central Semiconductor Corp |
MOSFET P-CH 30V 2.4A SOT-23F |
устарелый | P-Channel | MOSFET (Metal Oxide) | 30V | 2.4A (Ta) | 2.5V, 4.5V | 91 mOhm @ 1.2A, 4.5V | 1.4V @ 250µA | 9.6nC @ 5V | 12V | 800pF @ 10V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23F | SOT-23-3 Flat Leads |
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Central Semiconductor Corp |
MOSFET P-CH 20V 2.3A SOT-23F |
устарелый | P-Channel | MOSFET (Metal Oxide) | 20V | 2.3A (Ta) | 2.5V, 5V | 88 mOhm @ 1.2A, 5V | 1.4V @ 250µA | 12nC @ 5V | 12V | 800pF @ 10V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23F | SOT-23-3 Flat Leads |
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Central Semiconductor Corp |
MOSFET N-CH 40V 6A SOT-89 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 6A (Ta) | 4.5V, 10V | 31 mOhm @ 6A, 10V | 3V @ 250µA | 12nC @ 10V | 20V | 730pF @ 20V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-89 | TO-243AA |
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Central Semiconductor Corp |
MOSFET P-CH 30V 11A 8SOIC |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 20 mOhm @ 11A, 10V | 3V @ 250µA | 80nC @ 10V | 20V | 3100pF @ 8V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Central Semiconductor Corp |
MOSFET N-CH 4A 650V DPAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 650V | 4A (Ta) | 10V | 2.7 Ohm @ 2A, 10V | 4V @ 250µA | 11.4nC @ 10V | 30V | 463pF @ 25V | - | 620mW (Ta), 77W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Central Semiconductor Corp |
MOSFET N-CH 3A 800V DPAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 4.8 Ohm @ 1.5A, 10V | 4V @ 250µA | 11.3nC @ 10V | 30V | 415pF @ 25V | - | 80W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Central Semiconductor Corp |
MOSFET N-CH 4A 600V DPAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 950 mOhm @ 2A, 10V | 4V @ 250µA | 11.59nC @ 10V | 30V | 328pF @ 100V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Central Semiconductor Corp |
MOSFET N-CH 7A 650V DPAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Ta) | 10V | 1.5 Ohm @ 3.5A, 10V | 4V @ 250µA | 16.8nC @ 10V | 30V | 754pF @ 25V | - | 1.12W (Ta), 140W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Central Semiconductor Corp |
MOSFET N-CH 7A 600V DPAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 580 mOhm @ 3.5A, 10V | 4V @ 250µA | 14.5nC @ 10V | 30V | 440pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Central Semiconductor Corp |
MOSFET N-CH 5A 800V TO-220FP |
в производстве | N-Channel | MOSFET (Metal Oxide) | 800V | 5A (Tc) | 10V | 2.7 Ohm @ 2.5A, 10V | 4V @ 250µA | 17.4nC @ 10V | 30V | 705pF @ 25V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Central Semiconductor Corp |
MOSFET N-CH 800V 6A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 950 mOhm @ 3A, 10V | 4V @ 250µA | 24.3nC @ 10V | 30V | - | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Central Semiconductor Corp |
MOSFET N-CH 8A 800V TO-220FP |
в производстве | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 1.6 Ohm @ 4A, 10V | 4V @ 250µA | 24.45nC @ 10V | 30V | 1110pF @ 25V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Central Semiconductor Corp |
MOSFET N-CH 10A 650V TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 650V | 10A (Ta) | 10V | 1 Ohm @ 5A, 10V | 4V @ 250µA | 20nC @ 10V | 30V | 1168pF @ 25V | - | 2W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Central Semiconductor Corp |
MOSFET N-CH 11A 600V TO-220FP |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 360 mOhm @ 5.5A, 10V | 4V @ 250µA | 23.05nC @ 10V | 30V | 763pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Central Semiconductor Corp |
MOSFET P-CH 30V 0.45A SOT883 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 450mA (Ta) | 1.8V, 4.5V | 1.1 Ohm @ 430mA, 4.5V | 1V @ 250µA | 0.88nC @ 4.5V | 8V | 55pF @ 25V | - | 100mW (Ta) | -65°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-883VL | SC-101, SOT-883 |
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Central Semiconductor Corp |
MOSFET N-CH 20V 3.2A SOT-23F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 20V | 3.2A (Ta) | 2.5V, 4.5V | 50 mOhm @ 1.6A, 4.5V | 1.2V @ 250µA | 10nC @ 4.5V | 12V | 395pF @ 10V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23F | SOT-23-3 Flat Leads |
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Central Semiconductor Corp |
MOSFET N-CH 30V 3.6A SOT-23F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 3.6A (Ta) | 2.5V, 4.5V | 40 mOhm @ 1.8A, 4.5V | 1.2V @ 250µA | 13nC @ 4.5V | 12V | 590pF @ 10V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23F | SOT-23-3 Flat Leads |
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Central Semiconductor Corp |
MOSFET N-CH 30V 6.9A SOT-89 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 6.9A (Ta) | 2.5V, 10V | 30 mOhm @ 7A, 10V | 1.4V @ 250µA | 11nC @ 10V | 12V | 580pF @ 15V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-89 | TO-243AA |
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Central Semiconductor Corp |
MOSFET N-CH 60V 5.3A SOT-89 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 5.3A (Ta) | 4.5V, 10V | 41 mOhm @ 5.3A, 10V | 3V @ 250µA | 8.8nC @ 5V | 20V | 920pF @ 30V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-89 | TO-243AA |
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Central Semiconductor Corp |
MOSFET P-CH 16V 5.3A 8SOIC |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 5.3A (Ta) | 5V, 10V | 72 mOhm @ 2.7A, 10V | 3V @ 250µA | 7nC @ 5V | 16V | 590pF @ 10V | - | 2W (Ta) | - | SMD Поверхностный монтаж | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
