GeneSiC Semiconductor агент по продажам - Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные - GA50JT12-247 GA08JT17-247

номер части	Производитель / Марка	Краткое описание	Статус детали	Тип полевого транзистора	Технологии	Слив к источнику напряжения (Vdss)	Ток - непрерывный слив (Id) при 25 ° C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Макс.) @ Id, Vgs	Vgs (th) (Max) @ Id	Заряд затвора (Qg) (Макс.) @ Vgs	Vgs (Макс.)	Входная емкость (Ciss) (Макс.) @ Vds	Функция FET	Рассеиваемая мощность (макс.)	Рабочая Температура	Тип монтажа	Пакет устройств поставщика	Упаковка / чехол
GA50JT12-247	GeneSiC Semiconductor	TRANSISTOR SJT 1.2KV 50A	в производстве	-	SiC (Silicon Carbide Junction Transistor)	1200V	100A (Tc)	-	25 mOhm @ 50A	-	-	-	7209pF @ 800V	-	583W (Tc)	175°C (TJ)	Through Hole	TO-247AB	TO-247-3
GA08JT17-247	GeneSiC Semiconductor	TRANSISTOR SJT 1700V 8A TO-247AB	в производстве	-	SiC (Silicon Carbide Junction Transistor)	1700V	8A (Tc) (90°C)	-	250 mOhm @ 8A	-	-	-	-	-	48W (Tc)	175°C (TJ)	Through Hole	TO-247AB	TO-247-3
GA05JT12-263	GeneSiC Semiconductor	TRANSISTOR SJT 1200V 15A	в производстве	-	SiC (Silicon Carbide Junction Transistor)	1200V	15A (Tc)	-	-	-	-	-	-	-	106W (Tc)	175°C (TJ)	SMD Поверхностный монтаж	D2PAK (7-Lead)	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
GA10JT12-263	GeneSiC Semiconductor	TRANSISTOR SJT 1200V 25A	в производстве	-	SiC (Silicon Carbide Junction Transistor)	1200V	25A (Tc)	-	120 mOhm @ 10A	-	-	-	1403pF @ 800V	-	170W (Tc)	175°C (TJ)	SMD Поверхностный монтаж	-	-
GA20JT12-263	GeneSiC Semiconductor	TRANSISTOR SJT 1200V 45A	в производстве	-	SiC (Silicon Carbide Junction Transistor)	1200V	45A (Tc)	-	60 mOhm @ 20A	-	-	-	3091pF @ 800V	-	282W (Tc)	175°C (TJ)	SMD Поверхностный монтаж	D2PAK (7-Lead)	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
GA04JT17-247	GeneSiC Semiconductor	TRANSISTOR SJT 1700V 4A TO-247AB	в производстве	-	SiC (Silicon Carbide Junction Transistor)	1700V	4A (Tc) (95°C)	-	480 mOhm @ 4A	-	-	-	-	-	106W (Tc)	175°C (TJ)	Through Hole	TO-247AB	TO-247-3
GA05JT01-46	GeneSiC Semiconductor	TRANSISTOR SJT 100V 9A	в производстве	-	SiC (Silicon Carbide Junction Transistor)	100V	9A (Tc)	-	240 mOhm @ 5A	-	-	-	-	-	20W (Tc)	-55°C ~ 225°C (TJ)	Through Hole	TO-46	TO-46-3
GA05JT03-46	GeneSiC Semiconductor	TRANSISTOR SJT 300V 9A	в производстве	-	SiC (Silicon Carbide Junction Transistor)	300V	9A (Tc)	-	240 mOhm @ 5A	-	-	-	-	-	20W (Tc)	-55°C ~ 225°C (TJ)	Through Hole	TO-46	TO-46-3
GA100JT12-227	GeneSiC Semiconductor	TRANSISTOR SJT 1200V 160A SOT227	в производстве	-	SiC (Silicon Carbide Junction Transistor)	1200V	160A (Tc)	-	10 mOhm @ 100A	-	-	-	14400pF @ 800V	-	535W (Tc)	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
GA10SICP12-263	GeneSiC Semiconductor	TRANSISTOR SJT 1200V 25A TO263-7	в производстве	-	SiC (Silicon Carbide Junction Transistor)	1200V	25A (Tc)	-	100 mOhm @ 10A	-	-	-	1403pF @ 800V	-	170W (Tc)	175°C (TJ)	SMD Поверхностный монтаж	D2PAK (7-Lead)	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
GA20SICP12-247	GeneSiC Semiconductor	TRANSISTOR SJT 1200V 45A TO247	в производстве	-	SiC (Silicon Carbide Junction Transistor)	1200V	45A (Tc)	-	50 mOhm @ 20A	-	-	-	3091pF @ 800V	-	282W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247AB	TO-247-3
GA50JT06-258	GeneSiC Semiconductor	TRANSISTOR SJT 600V 100A	в производстве	-	SiC (Silicon Carbide Junction Transistor)	600V	100A (Tc)	-	25 mOhm @ 50A	-	-	-	-	-	769W (Tc)	-55°C ~ 225°C (TJ)	Through Hole	TO-258	TO-258-3, TO-258AA
GA16JT17-247	GeneSiC Semiconductor	TRANSISTOR SJT 1700V 16A TO-247AB	устарелый	-	SiC (Silicon Carbide Junction Transistor)	1700V	16A (Tc) (90°C)	-	110 mOhm @ 16A	-	-	-	-	-	282W (Tc)	175°C (TJ)	Through Hole	TO-247AB	TO-247-3
2N7635-GA	GeneSiC Semiconductor	TRANSISTOR SJT 650V 4A TO-257	устарелый	-	SiC (Silicon Carbide Junction Transistor)	650V	4A (Tc) (165°C)	-	415 mOhm @ 4A	-	-	-	324pF @ 35V	-	47W (Tc)	-55°C ~ 225°C (TJ)	Through Hole	TO-257	TO-257-3
2N7636-GA	GeneSiC Semiconductor	TRANSISTOR SJT 650V 4A TO276	устарелый	-	SiC (Silicon Carbide Junction Transistor)	650V	4A (Tc) (165°C)	-	415 mOhm @ 4A	-	-	-	324pF @ 35V	-	125W (Tc)	-55°C ~ 225°C (TJ)	SMD Поверхностный монтаж	TO-276	TO-276AA
2N7637-GA	GeneSiC Semiconductor	TRANSISTOR SJT 650V 7A TO-257	устарелый	-	SiC (Silicon Carbide Junction Transistor)	650V	7A (Tc) (165°C)	-	170 mOhm @ 7A	-	-	-	720pF @ 35V	-	80W (Tc)	-55°C ~ 225°C (TJ)	Through Hole	TO-257	TO-257-3
2N7638-GA	GeneSiC Semiconductor	TRANSISTOR SJT 650V 8A TO276	устарелый	-	SiC (Silicon Carbide Junction Transistor)	650V	8A (Tc) (158°C)	-	170 mOhm @ 8A	-	-	-	720pF @ 35V	-	200W (Tc)	-55°C ~ 225°C (TJ)	SMD Поверхностный монтаж	TO-276	TO-276AA
2N7639-GA	GeneSiC Semiconductor	TRANSISTOR SJT 650V 15A TO-257	устарелый	-	SiC (Silicon Carbide Junction Transistor)	650V	15A (Tc) (155°C)	-	105 mOhm @ 15A	-	-	-	1534pF @ 35V	-	172W (Tc)	-55°C ~ 225°C (TJ)	Through Hole	TO-257	TO-257-3
2N7640-GA	GeneSiC Semiconductor	TRANSISTOR SJT 650V 16A TO276	устарелый	-	SiC (Silicon Carbide Junction Transistor)	650V	16A (Tc) (155°C)	-	105 mOhm @ 16A	-	-	-	1534pF @ 35V	-	330W (Tc)	-55°C ~ 225°C (TJ)	SMD Поверхностный монтаж	TO-276	TO-276AA
GA03JT12-247	GeneSiC Semiconductor	TRANSISTOR SJT 1200V 3A TO-247AB	устарелый	-	SiC (Silicon Carbide Junction Transistor)	1200V	3A (Tc) (95°C)	-	460 mOhm @ 3A	-	-	-	-	-	15W (Tc)	175°C (TJ)	Through Hole	TO-247AB	TO-247-3
GA06JT12-247	GeneSiC Semiconductor	TRANSISTOR SJT 1200V 6A TO-247AB	устарелый	-	SiC (Silicon Carbide Junction Transistor)	1200V	6A (Tc) (90°C)	-	220 mOhm @ 6A	-	-	-	-	-	-	175°C (TJ)	Through Hole	TO-247AB	TO-247-3
GA05JT12-247	GeneSiC Semiconductor	TRANSISTOR SJT 1200V 5A	устарелый	-	SiC (Silicon Carbide Junction Transistor)	1200V	5A (Tc)	-	280 mOhm @ 5A	-	-	-	-	-	106W (Tc)	175°C (TJ)	Through Hole	TO-247AB	TO-247-3
GA10JT12-247	GeneSiC Semiconductor	TRANSISTOR SJT 1.2KV 10A	устарелый	-	SiC (Silicon Carbide Junction Transistor)	1200V	10A (Tc)	-	140 mOhm @ 10A	-	-	-	-	-	170W (Tc)	175°C (TJ)	Through Hole	TO-247AB	TO-247-3
GA20JT12-247	GeneSiC Semiconductor	TRANSISTOR SJT 1.2KV 20A	устарелый	-	SiC (Silicon Carbide Junction Transistor)	1200V	20A (Tc)	-	70 mOhm @ 20A	-	-	-	-	-	282W (Tc)	175°C (TJ)	Through Hole	TO-247AB	TO-247-3
GA50JT17-247	GeneSiC Semiconductor	TRANSISTOR SJT 1.7KV 100A	устарелый	-	SiC (Silicon Carbide Junction Transistor)	1700V	100A (Tc)	-	25 mOhm @ 50A	-	-	-	-	-	583W (Tc)	175°C (TJ)	Through Hole	TO-247	TO-247-3
GA50JT12-263	GeneSiC Semiconductor	TRANSISTOR 1200V 100A TO263-7	устарелый	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GA100JT17-227	GeneSiC Semiconductor	TRANSISTOR SJT 1700V 160A SOT227	устарелый	-	SiC (Silicon Carbide Junction Transistor)	1700V	160A (Tc)	-	10 mOhm @ 100A	-	-	-	14400pF @ 800V	-	535W (Tc)	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC

Производители для Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные