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Global Power Technologies Group |
MOSFET N-CH 200V 18A IPAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 170 mOhm @ 9A, 10V | 5V @ 250µA | 18nC @ 10V | ±30V | 950pF @ 25V | - | 94W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Global Power Technologies Group |
MOSFET N-CH 600V 4A IPAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 2.5 Ohm @ 2A, 10V | 5V @ 250µA | 12nC @ 10V | ±30V | 545pF @ 25V | - | 86.2W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Global Power Technologies Group |
MOSFET N-CH 500V 20A TO3PN |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 300 mOhm @ 10A, 10V | 4V @ 250µA | 54nC @ 10V | ±30V | 3094pF @ 25V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Global Power Technologies Group |
MOSFET N-CH 600V 10A TO220F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 700 mOhm @ 5A, 10V | 5V @ 250µA | 35nC @ 10V | ±30V | 1660pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 400V 2A DPAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 400V | 2A (Tc) | 10V | 3.4 Ohm @ 1A, 10V | 4V @ 250µA | 3.7nC @ 10V | ±30V | 210pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Global Power Technologies Group |
MOSFET N-CH 400V 2A IPAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 400V | 2A (Tc) | 10V | 3.4 Ohm @ 1A, 10V | 4V @ 250µA | 3.7nC @ 10V | ±30V | 210pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Global Power Technologies Group |
MOSFET N-CH 500V 2.5A DPAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 2.8 Ohm @ 1.25A, 10V | 4V @ 250µA | 9.2nC @ 10V | ±30V | 395pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Global Power Technologies Group |
MOSFET N-CH 500V 2.5A TO220 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 2.8 Ohm @ 1.25A, 10V | 4V @ 250µA | 9nC @ 10V | ±30V | 395pF @ 25V | - | 52.1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 500V 2.5A IPAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 2.8 Ohm @ 1.25A, 10V | 4V @ 250µA | 9.2nC @ 10V | ±30V | 395pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Global Power Technologies Group |
MOSFET N-CH 800V 3A TO220 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 4.2 Ohm @ 1.5A, 10V | 4V @ 250µA | 19nC @ 10V | ±30V | 696pF @ 25V | - | 94W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 800V 3A IPAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 4.2 Ohm @ 1.5A, 10V | 4V @ 250µA | 19nC @ 10V | ±30V | 696pF @ 25V | - | 94W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Global Power Technologies Group |
MOSFET N-CH 900V 4A TO220F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 900V | 4A (Tc) | 10V | 4 Ohm @ 2A, 10V | 4V @ 250µA | 25nC @ 10V | ±30V | 955pF @ 25V | - | 38.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 900V 4A TO220 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 900V | 4A (Tc) | 10V | 4 Ohm @ 2A, 10V | 4V @ 250µA | 25nC @ 10V | ±30V | 955pF @ 25V | - | 123W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 400V 3.4A DPAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 400V | 3.4A (Tc) | 10V | 1.6 Ohm @ 1.7A, 10V | 4V @ 250µA | 7.1nC @ 10V | ±30V | 522pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Global Power Technologies Group |
MOSFET N-CH 400V 3.4A IPAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 400V | 3.4A (Tc) | 10V | 1.6 Ohm @ 1.7A, 10V | 4V @ 250µA | 7.1nC @ 10V | ±30V | 522pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Global Power Technologies Group |
MOSFET N-CH 500V 4.5A DPAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 1.65 Ohm @ 2.25A, 10V | 4V @ 250µA | 11nC @ 10V | ±30V | 627pF @ 25V | - | 92.5W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Global Power Technologies Group |
MOSFET N-CH 500V 4.5A TO220F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 1.65 Ohm @ 2.25A, 10V | 4V @ 250µA | 11nC @ 10V | ±30V | 627pF @ 25V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 500V 4.5A TO220 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 1.65 Ohm @ 2.25A, 10V | 4V @ 250µA | 11nC @ 10V | ±30V | 627pF @ 25V | - | 92.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 500V 4.5A IPAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 1.65 Ohm @ 2.25A, 10V | 4V @ 250µA | 11nC @ 10V | ±30V | 627pF @ 25V | - | 92.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Global Power Technologies Group |
MOSFET N-CH 650V 5.5A DPAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 650V | 5.5A (Tc) | 10V | 1.6 Ohm @ 2.75A, 10V | 4V @ 250µA | 17nC @ 10V | ±30V | 1177pF @ 25V | - | 120W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Global Power Technologies Group |
MOSFET N-CH 650V 5.5A TO220F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 650V | 5.5A (Tc) | 10V | 1.6 Ohm @ 2.75A, 10V | 4V @ 250µA | 17nC @ 10V | ±30V | 1177pF @ 25V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 650V 5.5A IPAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 650V | 5.5A (Tc) | 10V | 1.6 Ohm @ 2.75A, 10V | 4V @ 250µA | 17nC @ 10V | ±30V | 1177pF @ 25V | - | 120W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Global Power Technologies Group |
MOSFET N-CH 700V 5A TO220F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 700V | 5A (Tc) | 10V | 1.65 Ohm @ 2.5A, 10V | 4V @ 250µA | 23nC @ 10V | ±30V | 1500pF @ 25V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 250V 8A DPAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 250V | 8A (Tc) | 10V | 600 mOhm @ 4A, 10V | 5V @ 250µA | 8.4nC @ 10V | ±30V | 423pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Global Power Technologies Group |
MOSFET N-CH 250V 8A TO220F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 250V | 8A (Tc) | 10V | 600 mOhm @ 4A, 10V | 5V @ 250µA | 8.4nC @ 10V | ±30V | 423pF @ 25V | - | 17.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 250V 8A TO220 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 250V | 8A (Tc) | 10V | 600 mOhm @ 4A, 10V | 5V @ 250µA | 8.4nC @ 10V | ±30V | 423pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 500V 8A IPAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850 mOhm @ 4A, 10V | 5V @ 250µA | 21nC @ 10V | ±30V | 937pF @ 25V | - | 120W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Global Power Technologies Group |
MOSFET N-CH 800V 8A TO220F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 1.4 Ohm @ 4A, 10V | 4V @ 250µA | 46nC @ 10V | ±30V | 1921pF @ 25V | - | 40.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 200V 9A DPAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 200V | 9A (Tc) | 10V | 400 mOhm @ 4.5A, 10V | 5V @ 250µA | 8.6nC @ 10V | ±30V | 414pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Global Power Technologies Group |
MOSFET N-CH 200V 9A TO220 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 200V | 9A (Tc) | 10V | 400 mOhm @ 4.5A, 10V | 5V @ 250µA | 8.6nC @ 10V | ±30V | 414pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 200V 9A IPAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 200V | 9A (Tc) | 10V | 400 mOhm @ 4.5A, 10V | 5V @ 250µA | 8.6nC @ 10V | ±30V | 414pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Global Power Technologies Group |
MOSFET N-CH 500V 8.5A TO220F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 8.5A (Tc) | 10V | 850 mOhm @ 4.25A, 10V | 4V @ 250µA | 24nC @ 10V | ±30V | 1195pF @ 25V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 500V 8.5A TO220 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 8.5A (Tc) | 10V | 850 mOhm @ 4.25A, 10V | 4V @ 250µA | 24nC @ 10V | ±30V | 1195pF @ 25V | - | 127W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 600V 9A TO220F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 1 Ohm @ 4.5A, 10V | 4V @ 250µA | 27nC @ 10V | ±30V | 1440pF @ 25V | - | 51.4W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 700V 9A TO220F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 700V | 9A (Tc) | 10V | 1.05 Ohm @ 4.5A, 10V | 4V @ 250µA | 30nC @ 10V | ±30V | 1944pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 900V 9A TO220 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 900V | 9A (Tc) | 10V | 1.4 Ohm @ 4.5A, 10V | 4V @ 250µA | 65nC @ 10V | ±30V | 2324pF @ 25V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 600V 10A TO220F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750 mOhm @ 5A, 10V | 4V @ 250µA | 36nC @ 10V | ±30V | 1891pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 900V 10A TO3PN |
устарелый | N-Channel | MOSFET (Metal Oxide) | 900V | 10A (Tc) | 10V | 1.05 Ohm @ 5A, 10V | 4V @ 250µA | 53nC @ 10V | ±30V | 2336pF @ 25V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Global Power Technologies Group |
MOSFET N-CH 500V 10A TO220F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 10A (Tc) | 10V | 700 mOhm @ 5A, 10V | 3.5V @ 250µA | 28nC @ 10V | ±30V | 1546pF @ 25V | - | 51.4W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 500V 10A TO220 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 10A (Tc) | 10V | 700 mOhm @ 5A, 10V | 3.5V @ 250µA | 28nC @ 10V | ±30V | 1546pF @ 25V | - | 158W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 600V 12A TO220F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 650 mOhm @ 6A, 10V | 4V @ 250µA | 39nC @ 10V | ±30V | 2308pF @ 25V | - | 53W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 500V 13A TO220F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 13A (Tc) | 10V | 480 mOhm @ 6.5A, 10V | 4V @ 250µA | 36nC @ 10V | ±30V | 1918pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 500V 14A TO220 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 440 mOhm @ 7A, 10V | 4V @ 250µA | 39nC @ 10V | ±30V | 2263pF @ 25V | - | 231W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 250V 16A IPAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 250V | 16A (Tc) | 10V | 240 mOhm @ 8A, 10V | 5V @ 250µA | 19nC @ 10V | ±30V | 944pF @ 25V | - | 93.9W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Global Power Technologies Group |
MOSFET N-CH 600V 16A TO220F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 470 mOhm @ 8A, 10V | 4V @ 250µA | 53nC @ 10V | ±30V | 3039pF @ 25V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 200V 18A DPAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 170 mOhm @ 9A, 10V | 5V @ 250µA | 18nC @ 10V | ±30V | 950pF @ 25V | - | 94W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Global Power Technologies Group |
MOSFET N-CH 200V 18A TO220F |
устарелый | N-Channel | MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 170 mOhm @ 9A, 10V | 5V @ 250µA | 18nC @ 10V | ±30V | 950pF @ 25V | - | 30.4W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 600V 20A TO3P |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 330 mOhm @ 10A, 10V | 4V @ 250µA | 76nC @ 10V | ±30V | 2097pF @ 25V | - | 347W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Global Power Technologies Group |
MOSFET N-CH 600V 20A TO3PN |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 330 mOhm @ 10A, 10V | 4V @ 250µA | 76nC @ 10V | ±30V | 2097pF @ 25V | - | 347W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Global Power Technologies Group |
MOSFET N-CH 600V 2A DPAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4 Ohm @ 1A, 10V | 5V @ 250µA | 9nC @ 10V | ±30V | 360pF @ 25V | - | 52.1W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
