IXYS Corporation агент по продажам - Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные - IXTY01N100 IXTY01N100D

номер части	Производитель / Марка	Краткое описание	Статус детали	Тип полевого транзистора	Технологии	Слив к источнику напряжения (Vdss)	Ток - непрерывный слив (Id) при 25 ° C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Макс.) @ Id, Vgs	Vgs (th) (Max) @ Id	Заряд затвора (Qg) (Макс.) @ Vgs	Vgs (Макс.)	Входная емкость (Ciss) (Макс.) @ Vds	Функция FET	Рассеиваемая мощность (макс.)	Рабочая Температура	Тип монтажа	Пакет устройств поставщика	Упаковка / чехол
IXTY01N100	IXYS	MOSFET N-CH 1000V 0.1A DPAK	в производстве	N-Channel	MOSFET (Metal Oxide)	1000V	100mA (Tc)	10V	80 Ohm @ 100mA, 10V	4.5V @ 25µA	6.9nC @ 10V	±20V	54pF @ 25V	-	25W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY01N100D	IXYS	MOSFET N-CH 1000V 0.1A TO-252AA	в производстве	N-Channel	MOSFET (Metal Oxide)	1000V	100mA (Tc)	-	110 Ohm @ 50mA, 0V	-	-	±20V	120pF @ 25V	Depletion Mode	1.1W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTA44P15TTRL	IXYS	MOSFET P-CH 150V 44A TO-263	в производстве	P-Channel	MOSFET (Metal Oxide)	150V	44A (Tc)	10V	65 mOhm @ 22A, 10V	4V @ 250µA	175nC @ 10V	±15V	13400pF @ 25V	-	298W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263 (IXTA)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTA10P50PTRL	IXYS	MOSFET P-CH 500V 10A TO-263AA	в производстве	P-Channel	MOSFET (Metal Oxide)	500V	10A (Tc)	10V	1 Ohm @ 5A, 10V	4V @ 250µA	50nC @ 10V	±20V	2840pF @ 25V	-	300W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263 (IXTA)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTA180N10T	IXYS	MOSFET N-CH 100V 180A TO-263	в производстве	N-Channel	MOSFET (Metal Oxide)	100V	180A (Tc)	10V	6.4 mOhm @ 25A, 10V	4.5V @ 250µA	151nC @ 10V	±30V	6900pF @ 25V	-	480W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	TO-263 (IXTA)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTP76P10T	IXYS	MOSFET P-CH 100V 76A TO-220	в производстве	P-Channel	MOSFET (Metal Oxide)	100V	76A (Tc)	10V	25 mOhm @ 500mA, 10V	4V @ 250µA	197nC @ 10V	±15V	13700pF @ 25V	-	298W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTP10P50P	IXYS	MOSFET P-CH 500V 10A TO-220	в производстве	P-Channel	MOSFET (Metal Oxide)	500V	10A (Tc)	10V	1 Ohm @ 5A, 10V	4V @ 250µA	50nC @ 10V	±20V	2840pF @ 25V	-	300W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTA10P50P	IXYS	MOSFET P-CH 500V 10A TO-263	в производстве	P-Channel	MOSFET (Metal Oxide)	500V	10A (Tc)	10V	1 Ohm @ 5A, 10V	4V @ 250µA	50nC @ 10V	±20V	2840pF @ 25V	-	300W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263 (IXTA)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTA26P20P	IXYS	MOSFET P-CH 200V 26A TO-263	в производстве	P-Channel	MOSFET (Metal Oxide)	200V	26A (Tc)	10V	170 mOhm @ 13A, 10V	4V @ 250µA	56nC @ 10V	±20V	2740pF @ 25V	-	300W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	TO-263 (IXTA)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTQ52P10P	IXYS	MOSFET P-CH 100V 52A TO-3P	в производстве	P-Channel	MOSFET (Metal Oxide)	100V	52A (Tc)	10V	50 mOhm @ 500mA, 10V	4.5V @ 250µA	60nC @ 10V	±20V	2845pF @ 25V	-	300W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXTP140P05T	IXYS	MOSFET P-CH 50V 140A TO-220	в производстве	P-Channel	MOSFET (Metal Oxide)	50V	140A (Tc)	10V	9 mOhm @ 70A, 10V	4V @ 250µA	200nC @ 10V	±15V	13500pF @ 25V	-	298W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXFH26N50P	IXYS	MOSFET N-CH 500V 26A TO-247	в производстве	N-Channel	MOSFET (Metal Oxide)	500V	26A (Tc)	10V	230 mOhm @ 13A, 10V	5.5V @ 4mA	60nC @ 10V	±30V	3600pF @ 25V	-	400W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXTH200N10T	IXYS	MOSFET N-CH 100V 200A TO-247	в производстве	N-Channel	MOSFET (Metal Oxide)	100V	200A (Tc)	10V	5.5 mOhm @ 50A, 10V	4.5V @ 250µA	152nC @ 10V	±30V	9400pF @ 25V	-	550W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXFA80N25X3	IXYS	MOSFET N-CH 250V 80A TO263AA	в производстве	N-Channel	MOSFET (Metal Oxide)	250V	80A (Tc)	10V	16 mOhm @ 40A, 10V	4.5V @ 1.5mA	83nC @ 10V	±20V	5430pF @ 25V	-	390W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263AA	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXFH60N50P3	IXYS	MOSFET N-CH 500V 60A TO247	в производстве	N-Channel	MOSFET (Metal Oxide)	500V	60A (Tc)	10V	100 mOhm @ 30A, 10V	5V @ 4mA	96nC @ 10V	±30V	6250pF @ 25V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXTH20P50P	IXYS	MOSFET P-CH 500V 20A TO-247	в производстве	P-Channel	MOSFET (Metal Oxide)	500V	20A (Tc)	10V	450 mOhm @ 10A, 10V	4V @ 250µA	103nC @ 10V	±20V	5120pF @ 25V	-	460W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXTH90P10P	IXYS	MOSFET P-CH 100V 90A TO-247	в производстве	P-Channel	MOSFET (Metal Oxide)	100V	90A (Tc)	10V	25 mOhm @ 45A, 10V	4V @ 250µA	120nC @ 10V	±20V	5800pF @ 25V	-	462W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXTT16N20D2	IXYS	MOSFET N-CH 200V 16A TO-268	в производстве	N-Channel	MOSFET (Metal Oxide)	200V	16A (Tc)	-	73 mOhm @ 8A, 0V	-	208nC @ 5V	±20V	5500pF @ 25V	Depletion Mode	695W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-268	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
IXFH50N20	IXYS	MOSFET N-CH 200V 50A TO-247AD	устарелый	N-Channel	MOSFET (Metal Oxide)	200V	50A (Tc)	10V	45 mOhm @ 25A, 10V	4V @ 4mA	220nC @ 10V	±20V	4400pF @ 25V	-	300W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFH26N50	IXYS	MOSFET N-CH 500V 26A TO-247AD	в производстве	N-Channel	MOSFET (Metal Oxide)	500V	26A (Tc)	10V	200 mOhm @ 13A, 10V	4V @ 4mA	160nC @ 10V	±20V	4200pF @ 25V	-	300W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXTK180N15P	IXYS	MOSFET N-CH 150V 180A TO-264	в производстве	N-Channel	MOSFET (Metal Oxide)	150V	180A (Tc)	10V	10 mOhm @ 90A, 10V	5V @ 500µA	240nC @ 10V	±20V	7000pF @ 25V	-	800W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
IXFH80N65X2	IXYS	MOSFET N-CH 650V 80A TO-247	в производстве	N-Channel	MOSFET (Metal Oxide)	650V	80A (Tc)	10V	40 mOhm @ 40A, 10V	5.5V @ 4mA	143nC @ 10V	±30V	8245pF @ 25V	-	890W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
IXFH320N10T2	IXYS	MOSFET N-CH 100V 320A TO-247	в производстве	N-Channel	MOSFET (Metal Oxide)	100V	320A (Tc)	10V	3.5 mOhm @ 100A, 10V	4V @ 250µA	430nC @ 10V	±20V	26000pF @ 25V	-	1000W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFH170N25X3	IXYS	MOSFET N-CH 250V 170A TO247	в производстве	N-Channel	MOSFET (Metal Oxide)	250V	170A (Tc)	10V	7.4 mOhm @ 85A, 10V	4.5V @ 4mA	190nC @ 10V	±20V	13500pF @ 25V	-	960W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXFH)	TO-247-3
IXFH16N120P	IXYS	MOSFET N-CH 1200V 16A TO-247	в производстве	N-Channel	MOSFET (Metal Oxide)	1200V	16A (Tc)	10V	950 mOhm @ 8A, 10V	6.5V @ 1mA	120nC @ 10V	±30V	6900pF @ 25V	-	660W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFK44N80P	IXYS	MOSFET N-CH 800V 44A TO-264	в производстве	N-Channel	MOSFET (Metal Oxide)	800V	44A (Tc)	10V	190 mOhm @ 22A, 10V	5V @ 8mA	198nC @ 10V	±30V	12000pF @ 25V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXTK170P10P	IXYS	MOSFET P-CH 100V 170A TO-264	в производстве	P-Channel	MOSFET (Metal Oxide)	100V	170A (Tc)	10V	12 mOhm @ 500mA, 10V	4V @ 1mA	240nC @ 10V	±20V	12600pF @ 25V	-	890W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
IXFK140N30P	IXYS	MOSFET N-CH 300V 140A TO-264	в производстве	N-Channel	MOSFET (Metal Oxide)	300V	140A (Tc)	10V	24 mOhm @ 70A, 10V	5V @ 8mA	185nC @ 10V	±20V	14800pF @ 25V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFK80N50P	IXYS	MOSFET N-CH 500V 80A TO-264	в производстве	N-Channel	MOSFET (Metal Oxide)	500V	80A (Tc)	10V	65 mOhm @ 40A, 10V	5V @ 8mA	197nC @ 10V	±30V	12700pF @ 25V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFX120N65X2	IXYS	MOSFET N-CH 650V 120A PLUS247	в производстве	N-Channel	MOSFET (Metal Oxide)	650V	120A (Tc)	10V	24 mOhm @ 60A, 10V	5.5V @ 8mA	225nC @ 10V	±30V	15500pF @ 25V	-	1250W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PLUS247™-3	TO-247-3
IXFN360N10T	IXYS	MOSFET N-CH 100V 360A SOT-227B	в производстве	N-Channel	MOSFET (Metal Oxide)	100V	360A (Tc)	10V	2.6 mOhm @ 180A, 10V	4.5V @ 250µA	505nC @ 10V	±20V	36000pF @ 25V	-	830W (Tc)	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFX230N20T	IXYS	MOSFET N-CH 200V 230A PLUS247	в производстве	N-Channel	MOSFET (Metal Oxide)	200V	230A (Tc)	10V	7.5 mOhm @ 60A, 10V	5V @ 8mA	378nC @ 10V	±20V	28000pF @ 25V	-	1670W (Tc)	-	Through Hole	PLUS247™-3	TO-247-3
IXTT2N170D2	IXYS	MOSFET N-CH 1700V 2A TO-268	в производстве	N-Channel	MOSFET (Metal Oxide)	1700V	2A (Tj)	-	6.5 Ohm @ 1A, 0V	-	110nC @ 5V	±20V	3650pF @ 25V	Depletion Mode	568W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-268	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
IXFK230N20T	IXYS	MOSFET N-CH 200V 230A TO-264	в производстве	N-Channel	MOSFET (Metal Oxide)	200V	230A (Tc)	10V	7.5 mOhm @ 60A, 10V	5V @ 8mA	378nC @ 10V	±20V	28000pF @ 25V	-	1670W (Tc)	-	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFN44N50	IXYS	MOSFET N-CH 500V 44A SOT-227B	в производстве	N-Channel	MOSFET (Metal Oxide)	500V	44A (Tc)	10V	120 mOhm @ 500mA, 10V	4V @ 8mA	270nC @ 10V	±20V	8400pF @ 25V	-	520W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN520N075T2	IXYS	MOSFET N-CH 75V 480A SOT227	в производстве	N-Channel	MOSFET (Metal Oxide)	75V	480A (Tc)	10V	1.9 mOhm @ 100A, 10V	5V @ 8mA	545nC @ 10V	±20V	41000pF @ 25V	-	940W (Tc)	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN48N50	IXYS	MOSFET N-CH 500V 48A SOT-227B	в производстве	N-Channel	MOSFET (Metal Oxide)	500V	48A (Tc)	10V	100 mOhm @ 500mA, 10V	4V @ 8mA	270nC @ 10V	±20V	8400pF @ 25V	-	520W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTN660N04T4	IXYS	40V/660A TRENCHT4 POWER MOSFET SOT	в производстве	N-Channel	MOSFET (Metal Oxide)	40V	660A (Tc)	10V	0.85 mOhm @ 100A, 10V	4V @ 250µA	860nC @ 10V	±15V	44000pF @ 25V	Current Sensing	1040W (Tc)	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFK360N15T2	IXYS	MOSFET N-CH 150V 360A TO264	в производстве	N-Channel	MOSFET (Metal Oxide)	150V	360A (Tc)	10V	4 mOhm @ 60A, 10V	5V @ 8mA	715nC @ 10V	±20V	47500pF @ 25V	-	1670W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXTT02N450HV	IXYS	MOSFET N-CH 4500V 0.2A TO268	в производстве	N-Channel	MOSFET (Metal Oxide)	4500V	200mA (Tc)	10V	750 Ohm @ 10mA, 10V	6.5V @ 250µA	10.4nC @ 10V	±20V	256pF @ 25V	-	113W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-268	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
IXFK55N50	IXYS	MOSFET N-CH 500V 55A TO-264AA	в производстве	N-Channel	MOSFET (Metal Oxide)	500V	55A (Tc)	10V	90 mOhm @ 27.5A, 10V	4.5V @ 8mA	330nC @ 10V	±20V	9400pF @ 25V	-	625W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFK24N100	IXYS	MOSFET N-CH 1KV 24A TO-264AA	в производстве	N-Channel	MOSFET (Metal Oxide)	1000V	24A (Tc)	10V	390 mOhm @ 12A, 10V	5.5V @ 8mA	267nC @ 10V	±20V	8700pF @ 25V	-	560W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFN200N07	IXYS	MOSFET N-CH 70V 200A SOT-227B	в производстве	N-Channel	MOSFET (Metal Oxide)	70V	200A (Tc)	10V	6 mOhm @ 500mA, 10V	4V @ 8mA	480nC @ 10V	±20V	9000pF @ 25V	-	520W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN180N10	IXYS	MOSFET N-CH 100V 180A SOT-227B	в производстве	N-Channel	MOSFET (Metal Oxide)	100V	180A (Tc)	10V	8 mOhm @ 500mA, 10V	4V @ 8mA	360nC @ 10V	±20V	9100pF @ 25V	-	600W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFB150N65X2	IXYS	MOSFET N-CH 650V 150A PLUS264	в производстве	N-Channel	MOSFET (Metal Oxide)	650V	150A (Tc)	10V	17 mOhm @ 75A, 10V	5.5V @ 8mA	430nC @ 10V	±30V	20400pF @ 25V	-	1560W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PLUS264™	TO-264-3, TO-264AA
IXFN230N20T	IXYS	MOSFET N-CH 200V 220A SOT-227	в производстве	N-Channel	MOSFET (Metal Oxide)	200V	220A (Tc)	10V	7.5 mOhm @ 60A, 10V	5V @ 8mA	378nC @ 10V	±20V	28000pF @ 25V	-	1090W (Tc)	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTK90N25L2	IXYS	MOSFET N-CH 250V 90A TO-264	в производстве	N-Channel	MOSFET (Metal Oxide)	250V	90A (Tc)	10V	33 mOhm @ 45A, 10V	4.5V @ 3mA	640nC @ 10V	±20V	23000pF @ 25V	-	960W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
IXTN600N04T2	IXYS	MOSFET N-CH 40V 600A SOT-227	в производстве	N-Channel	MOSFET (Metal Oxide)	40V	600A (Tc)	10V	1.05 mOhm @ 100A, 10V	3.5V @ 250µA	590nC @ 10V	±20V	40000pF @ 25V	-	940W (Tc)	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN82N60P	IXYS	MOSFET N-CH 600V 72A SOT-227B	в производстве	N-Channel	MOSFET (Metal Oxide)	600V	72A (Tc)	10V	75 mOhm @ 41A, 10V	5V @ 8mA	240nC @ 10V	±30V	23000pF @ 25V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTK60N50L2	IXYS	MOSFET N-CH 500V 60A TO-264	в производстве	N-Channel	MOSFET (Metal Oxide)	500V	60A (Tc)	10V	100 mOhm @ 30A, 10V	4.5V @ 250µA	610nC @ 10V	±30V	24000pF @ 25V	-	960W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA

Производители для Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные