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Microchip Technology |
MOSFET N-CH 500V 0.013A SOT23-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 13mA (Tj) | 0V | 1000 Ohm @ 500µA, 0V | - | - | ±20V | 10pF @ 25V | Depletion Mode | 360mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Microchip Technology |
MOSFET P-CH 6V 2A SC70-6 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 6V | 2A (Ta) | 1.8V, 4.5V | 84 mOhm @ 100mA, 4.5V | 1.2V @ 250µA | - | 6V | - | - | 270mW (Ta) | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SC-70-6 | 6-TSSOP, SC-88, SOT-363 |
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Microchip Technology |
MOSFET N-CH 500V 30MA SOT89-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 30mA (Tj) | 0V | 1000 Ohm @ 500µA, 0V | - | - | ±20V | 10pF @ 25V | Depletion Mode | 1.6W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-89-3 | TO-243AA |
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Microchip Technology |
MOSFET N-CH 450V 0.2A SOT89-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 450V | 200mA | 0V | 20 Ohm @ 150mA, 0V | - | - | ±20V | 360pF @ 25V | Depletion Mode | 1.6W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-243AA (SOT-89) | TO-243AA |
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Microchip Technology |
MOSFET N-CH 400V 0.17A SOT89-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 400V | 170mA (Tj) | 0V | 25 Ohm @ 120mA, 0V | - | - | ±20V | 300pF @ 25V | Depletion Mode | 1.6W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-243AA (SOT-89) | TO-243AA |
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Microchip Technology |
MOSFET P-CH 350V 0.085A SOT23-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 350V | 85mA (Tj) | 4.5V, 10V | 30 Ohm @ 200mA, 10V | 2.4V @ 1mA | - | ±20V | 110pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C | SMD Поверхностный монтаж | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
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Microchip Technology |
MOSFET N-CH 700V 0.17A 3DPAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 700V | 170mA (Tj) | 0V | 42 Ohm @ 100mA, 0V | - | - | ±20V | 540pF @ 25V | Depletion Mode | 2.5W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Microchip Technology |
MOSFET N-CH 240V 360MA SOT89-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 240V | 360mA (Tj) | 4.5V, 10V | 6 Ohm @ 500mA, 10V | 2V @ 1mA | - | ±20V | 125pF @ 25V | - | 1.6W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-243AA (SOT-89) | TO-243AA |
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Microchip Technology |
MOSFET N-CH 250V 1.1A 3DPAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 250V | 1.1A (Tj) | 0V | 3.5 Ohm @ 1A, 0V | - | 7.04nC @ 1.5V | ±20V | 1000pF @ 25V | Depletion Mode | - | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Microchip Technology |
MOSFET N-CH 60V 0.41A TO39-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 410mA (Ta) | 5V, 10V | 3 Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50pF @ 24V | - | 6.25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AD, TO-39-3 Metal Can |
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Microchip Technology |
MOSFET N-CH 9V 330MA SOT23-5 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 9V | 330mA (Tj) | 0V | 1.4 Ohm @ 100mA, 0V | - | - | +0.6V, -12V | 46pF @ 5V | Depletion Mode | 360mW (Ta) | -25°C ~ 125°C (TJ) | SMD Поверхностный монтаж | SOT-23-5 | SC-74A, SOT-753 |
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Microchip Technology |
MOSFET N-CH 60V 0.115A SOT23-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 115mA (Tj) | 5V, 10V | 7.5 Ohm @ 500mA, 10V | 2.5V @ 250µA | - | ±30V | 50pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 (TO-236AB) | TO-236-3, SC-59, SOT-23-3 |
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Microchip Technology |
MOSFET N-CH 60V 280MA SOT23-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 280mA (Tj) | 4.5V, 10V | 2.5 Ohm @ 500mA, 10V | 2V @ 1mA | - | ±20V | 50pF @ 25V | - | 360mW (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
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Microchip Technology |
MOSFET N-CH 60V 0.2A TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Tj) | 4.5V, 10V | 5 Ohm @ 500mA, 10V | 3V @ 1mA | - | ±30V | 60pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 60V 300MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 300mA (Tj) | 5V, 10V | 4 Ohm @ 500mA, 10V | 2.4V @ 1mA | - | ±20V | 50pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 250V SOT23-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 250V | 150mA (Ta) | 4.5V, 10V | 7 Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 110pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TA) | SMD Поверхностный монтаж | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
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Microchip Technology |
MOSFET N-CH 60V 0.23A TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 230mA (Tj) | 5V, 10V | 7.5 Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±30V | 60pF @ 25V | - | 400mW (Ta), 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 500V 30MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 30mA (Tj) | 0V | 1000 Ohm @ 500µA, 0V | - | - | ±20V | 10pF @ 25V | Depletion Mode | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 60V 310MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 310mA (Tj) | 5V, 10V | 5 Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±30V | 60pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET P-CH 60V 0.25A TO92-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 60V | 250mA (Tj) | 5V, 10V | 12 Ohm @ 500mA, 10V | 3.5V @ 1mA | - | ±20V | 60pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 250V 360MA SOT89-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 250V | 360mA (Tj) | 0V | 6 Ohm @ 200mA, 0V | - | - | ±20V | 350pF @ 25V | Depletion Mode | 1.6W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-243AA (SOT-89) | TO-243AA |
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Microchip Technology |
MOSFET N-CH 60V 300MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 300mA (Tj) | 4.5V, 10V | 2.5 Ohm @ 500mA, 10V | 2V @ 1mA | - | ±20V | 50pF @ 25V | - | 740mW (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 350V 0.23A SOT89-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 350V | 230mA (Tj) | 0V | 10 Ohm @ 150mA, 0V | - | - | ±20V | 360pF @ 25V | Depletion Mode | 1.6W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-243AA (SOT-89) | TO-243AA |
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Microchip Technology |
MOSFET N-CH 450V 0.1A SOT89-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 450V | 100mA (Tj) | 0V | 60 Ohm @ 100mA, 0V | - | - | ±20V | 120pF @ 25V | Depletion Mode | 1.3W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-243AA (SOT-89) | TO-243AA |
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Microchip Technology |
MOSFET P-CH 60V 0.12A SOT23-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 60V | 120mA (Tj) | 4.5V, 10V | 10 Ohm @ 200mA, 10V | 2.4V @ 1mA | - | ±20V | 60pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
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Microchip Technology |
MOSFET N-CH 350V 0.11A SOT23-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 350V | 110mA (Tj) | 3V, 10V | 15 Ohm @ 200mA, 10V | 2V @ 1mA | - | ±20V | 110pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 (TO-236AB) | TO-236-3, SC-59, SOT-23-3 |
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Microchip Technology |
MOSFET P-CH 40V 0.175A TO92-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 40V | 175mA (Tj) | 4.5V, 10V | 6 Ohm @ 500mA, 10V | 2V @ 1mA | - | ±20V | 60pF @ 25V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 40V 350MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 350mA (Tj) | 5V, 10V | 3 Ohm @ 1A, 10V | 2.4V @ 1mA | - | ±20V | 65pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 300V 0.175A TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 175mA (Tj) | 0V | 12 Ohm @ 150mA, 0V | - | - | ±20V | 300pF @ 25V | Depletion Mode | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 (TO-226) | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 450V 0.136A TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 450V | 136mA | 0V | 20 Ohm @ 150mA, 0V | - | - | ±20V | 360pF @ 25V | Depletion Mode | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 (TO-226) | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 400V 0.12A TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 400V | 120mA (Tj) | 0V | 25 Ohm @ 120mA, 0V | - | - | ±20V | 300pF @ 25V | Depletion Mode | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 (TO-226) | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET P-CH 60V 0.25A TO92-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 60V | 250mA (Tj) | 5V, 10V | 8 Ohm @ 500mA, 10V | 3.5V @ 1mA | - | ±20V | 60pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 40V 0.63A TO243AA |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 630mA (Tj) | 3V, 10V | 2 Ohm @ 1A, 10V | 1.6V @ 500µA | - | ±20V | 70pF @ 20V | - | 1.6W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-243AA (SOT-89) | TO-243AA |
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Microchip Technology |
MOSFET P-CH 60V 320MA TO92-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 60V | 320mA (Tj) | 5V, 10V | 3.5 Ohm @ 750mA, 10V | 2.4V @ 1mA | - | ±20V | 150pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 500V 0.25A SOT89-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 250mA (Tj) | 4.5V, 10V | 13 Ohm @ 400mA, 10V | 4V @ 1mA | - | ±20V | 150pF @ 25V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-243AA (SOT-89) | TO-243AA |
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Microchip Technology |
MOSFET P-CH 100V 0.48A SOT89-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 100V | 480mA (Tj) | 10V | 3.5 Ohm @ 750mA, 10V | 2.4V @ 1mA | - | ±20V | 125pF @ 25V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-243AA (SOT-89) | TO-243AA |
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Microchip Technology |
MOSFET N-CH 40V 0.45A TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 450mA (Ta) | 3V, 10V | 1.8 Ohm @ 1A, 10V | 1.6V @ 500µA | - | ±20V | 70pF @ 20V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 100V 350MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 350mA (Tj) | 4.5V, 10V | 3 Ohm @ 500mA, 10V | 2V @ 500µA | - | ±20V | 60pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 40V 700MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 700mA (Tj) | 5V, 10V | 750 mOhm @ 1.5A, 10V | 1.6V @ 1mA | - | ±20V | 190pF @ 20V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 50V 1.5A SOT89-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 50V | 1.5A (Tj) | 4.5V, 10V | 300 mOhm @ 1.5A, 10V | 2.4V @ 10mA | - | ±20V | 300pF @ 25V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-243AA (SOT-89) | TO-243AA |
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Microchip Technology |
MOSFET N-CH 20V 530MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 530mA (Tj) | 2V, 5V | 1.3 Ohm @ 500mA, 5V | 1V @ 1mA | - | ±20V | 200pF @ 20V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 30V 640MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 640mA (Tj) | 5V, 10V | 1.2 Ohm @ 1A, 10V | 2.5V @ 1mA | - | ±30V | 190pF @ 20V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 50V 1.2A TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 50V | 1.2A (Tj) | 4.5V, 10V | 300 mOhm @ 3A, 10V | 2.4V @ 10mA | - | ±20V | 300pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET P-CH 30V 650MA TO92-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 650mA (Tj) | 4.5V, 10V | 600 mOhm @ 3A, 10V | 3.5V @ 10mA | - | ±20V | 300pF @ 25V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 500V 50MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 50mA (Tj) | 5V, 10V | 60 Ohm @ 50mA, 10V | 4V @ 1mA | - | ±20V | 55pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET P-CH 60V 640MA TO92-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 60V | 640mA (Tj) | 5V, 10V | 900 mOhm @ 3.5A, 10V | 3.5V @ 10mA | - | ±20V | 450pF @ 25V | - | 740mW (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 90V 350MA 3TO-39 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 90V | 350mA (Tj) | 5V, 10V | 4 Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50pF @ 24V | - | 6.25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AD, TO-39-3 Metal Can |
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Microchip Technology |
MOSFET N-CH 100V 1.7A TO39-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 1.7A (Tj) | 5V, 10V | 350 mOhm @ 4A, 10V | 2.4V @ 10mA | - | ±20V | 500pF @ 25V | - | 360mW (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AD, TO-39-3 Metal Can |
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Microchip Technology |
MOSFET P-CH 60V 750MA 3TO-39 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 60V | 750mA (Tj) | 5V, 10V | 900 mOhm @ 3.5A, 10V | 3.5V @ 10mA | - | ±20V | 450pF @ 25V | - | 360mW (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AD, TO-39-3 Metal Can |
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Microchip Technology |
MOSFET N-CH 60V 0.23A TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 230mA (Tj) | 5V, 10V | 7.5 Ohm @ 500mA, 10V | 2.5V @ 250µA | - | ±30V | 50pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
