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ON Semiconductor |
RECT BRIDGE 1.2A 1000V MICRO DIP |
устарелый | Single Phase | Standard | 1kV | 1.2A | 1.015V @ 1.2A | 10µA @ 1000V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-SMD, Gull Wing | 4-MicroDIP/SMD |
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ON Semiconductor |
IC BRIDGE DIODE 1000V 4-MICRODIP |
в производстве | Single Phase | Standard | 1kV | 1A | 1.1V @ 1A | 10µA @ 1000V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-SMD, Gull Wing | 4-MicroDIP/SMD |
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ON Semiconductor |
IC RECT BRIDGE 0.5A 600V 4SOIC |
в производстве | Single Phase | Standard | 600V | 500mA | 1V @ 500mA | 5µA @ 600V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-269AA, 4-BESOP | 4-SOIC |
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ON Semiconductor |
IC BRIDGE RECT 0.5A 100V 4-SOIC |
в производстве | Single Phase | Standard | 100V | 500mA | 1V @ 500mA | 5µA @ 100V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-269AA, 4-BESOP | 4-SOIC |
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ON Semiconductor |
DIODE BRIDGE 0.5A 800V 4-SOIC |
в производстве | Single Phase | Standard | 800V | 500mA | 1V @ 500mA | 5µA @ 800V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-269AA, 4-BESOP | 4-SOIC |
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ON Semiconductor |
IC RECT BRIDGE 0.5A 200V 4SOIC |
в производстве | Single Phase | Standard | 200V | 500mA | 1V @ 500mA | 5µA @ 200V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-269AA, 4-BESOP | 4-SOIC |
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ON Semiconductor |
DIODE BRIDGE 0.5A 1000V 4-SOIC |
в производстве | Single Phase | Standard | 1kV | 500mA | 1V @ 500mA | 5µA @ 1000V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-269AA, 4-BESOP | 4-SOIC |
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ON Semiconductor |
IC RECT BRIDGE 1000V 1.5A 4-SMD |
в производстве | Single Phase | Standard | 1kV | 1.5A | 1.1V @ 1.5A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-SMD, Gull Wing | 4-SDIP |
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ON Semiconductor |
IC RECT BRIDGE 400V 1.5A 4-SMD |
в производстве | Single Phase | Standard | 400V | 1.5A | 1.1V @ 1.5A | 5µA @ 400V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-SMD, Gull Wing | 4-SDIP |
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ON Semiconductor |
DIODE BRIDGE 200V 1.5A 4-SMD |
в производстве | Single Phase | Standard | 200V | 1.5A | 1.1V @ 1.5A | 10µA @ 200V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-SMD, Gull Wing | 4-SDIP |
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ON Semiconductor |
DIODE BRIDGE 800V 1.5A 4-SMD |
в производстве | Single Phase | Standard | 800V | 1.5A | 1.1V @ 1A | 10µA @ 800V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-SMD, Gull Wing | 4-SDIP |
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ON Semiconductor |
IC RECT BRIDGE 100V 1.5A 4-SMD |
в производстве | Single Phase | Standard | 100V | 1.5A | 1.1V @ 1.5A | 5µA @ 100V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-SMD, Gull Wing | 4-SDIP |
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ON Semiconductor |
RECT BRIDGE GPP 8A 100V GBU |
в производстве | Single Phase | Standard | 100V | 8A | 1V @ 8A | 5µA @ 100V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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ON Semiconductor |
RECT BRIDGE GPP 25A 1000V GBPC |
в производстве | Single Phase | Standard | 1kV | 25A | 1.1V @ 12.5A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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ON Semiconductor |
BRIDGE RECTIFIER GPP 35A GBPC |
в производстве | Single Phase | Standard | 1kV | 35A | 1.1V @ 17.5A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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ON Semiconductor |
RECT BRIDGE GPP 35A 200V GBPC-W |
в производстве | Single Phase | Standard | 200V | 35A | 1.1V @ 17.5A | 5µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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ON Semiconductor |
IC BRIDGE DIODE 800V 4-MICRODIP |
в производстве | Single Phase | Standard | 800V | 1A | 1.1V @ 1A | 10µA @ 800V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-SMD, Gull Wing | 4-MicroDIP/SMD |
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ON Semiconductor |
BRIDGE RECT 1A 1KV 4SDIP |
в производстве | Single Phase | Standard | 1kV | 1A | 1.1V @ 1A | 3µA @ 1000V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-SMD, Gull Wing | 4-SDIP |
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ON Semiconductor |
DIODE BRIDGE 600V 1.5A 4-SMD |
в производстве | Single Phase | Standard | 600V | 1.5A | 1.1V @ 1.5A | 5µA @ 600V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-SMD, Gull Wing | 4-SDIP |
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ON Semiconductor |
DIODE BRIDGE 50V 1.5A 4-SMD |
в производстве | Single Phase | Standard | 50V | 1.5A | 1.1V @ 1A | 5µA @ 50V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-SMD, Gull Wing | 4-SDIP |
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ON Semiconductor |
DIODE BRIDGE 1000V 2A SDIP |
в производстве | Single Phase | Standard | 1kV | 2A | 1.1V @ 2A | 3µA @ 1000V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-SMD, Gull Wing | 4-SDIP |
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ON Semiconductor |
DIODE BRIDGE 50V 2A SDIP |
в производстве | Single Phase | Standard | 50V | 2A | 1.1V @ 2A | 3µA @ 50V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-SMD, Gull Wing | 4-SDIP |
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ON Semiconductor |
DIODE BRIDGE 100V 2A SDIP |
в производстве | Single Phase | Standard | 100V | 2A | 1.1V @ 2A | 3µA @ 100V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-SMD, Gull Wing | 4-SDIP |
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ON Semiconductor |
RECTIFIER BRIDGE 50V 1.5A 4-DIP |
в производстве | Single Phase | Standard | 50V | 1.5A | 1.1V @ 1A | 10µA @ 50V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.300", 7.62mm) | 4-DIP |
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ON Semiconductor |
RECT BRIDGE GPP 4A 400V GBU |
в производстве | Single Phase | Standard | 400V | 4A | 1V @ 4A | 5µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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ON Semiconductor |
RECT BRIDGE GPP 6A 100V GBU |
в производстве | Single Phase | Standard | 100V | 6A | 1V @ 6A | 5µA @ 100V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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ON Semiconductor |
RECT BRIDGE GPP 6A 800V GBU |
в производстве | Single Phase | Standard | 800V | 6A | 1V @ 6A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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ON Semiconductor |
RECT BRIDGE GPP 6A 600V GBU |
в производстве | Single Phase | Standard | 600V | 6A | 1V @ 6A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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ON Semiconductor |
RECT BRIDGE GPP 8A 200V GBU |
в производстве | Single Phase | Standard | 200V | 8A | 1V @ 8A | 5µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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ON Semiconductor |
RECT BRIDGE GPP 8A 1000V GBU |
в производстве | Single Phase | Standard | 1kV | 8A | 1V @ 8A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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ON Semiconductor |
IC BRIDGE RECT 600V 20A 4-SIP |
в производстве | Single Phase | Standard | 600V | 20A | 1.1V @ 20A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, TS-6P | TS-6P |
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ON Semiconductor |
IC BRIDGE RECT 600V 25A 4-SIP |
в производстве | Single Phase | Standard | 600V | 25A | 1.1V @ 25A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, TS-6P | TS-6P |
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ON Semiconductor |
RECT BRIDGE GPP 25A 400V GBPC-W |
в производстве | Single Phase | Standard | 400V | 25A | 1.1V @ 12.5A | 5µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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ON Semiconductor |
RECT BRIDGE GPP 25A 400V GBPC |
в производстве | Single Phase | Standard | 400V | 25A | 1.1V @ 12.5A | 5µA @ 400V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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ON Semiconductor |
RECT BRIDGE GPP 12A 100V GBPC-W |
в производстве | Single Phase | Standard | 100V | 12A | 1.1V @ 6A | 5µA @ 100V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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ON Semiconductor |
RECT BRIDGE GPP 15A 200V GBPC |
в производстве | Single Phase | Standard | 200V | 15A | 1.1V @ 7.5A | 5µA @ 200V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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ON Semiconductor |
RECT BRIDGE GPP 25A 100V GBPC |
в производстве | Single Phase | Standard | 100V | 25A | 1.1V @ 7.5A | 5µA @ 100V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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ON Semiconductor |
RECT BRIDGE GPP 25A 200V GBPC-W |
в производстве | Single Phase | Standard | 200V | 25A | 1.1V @ 12.5A | 5µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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ON Semiconductor |
RECT BRIDGE GPP 25A 600V GBPC-W |
в производстве | Single Phase | Standard | 600V | 25A | 1.1V @ 12.5A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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ON Semiconductor |
DIODE BRIDGE GPP 25A 200V GBPC |
в производстве | Single Phase | Standard | 200V | 25A | 1.1V @ 12.5A | 5µA @ 200V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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ON Semiconductor |
RECT BRIDGE GPP 25A 600V GBPC |
в производстве | Single Phase | Standard | 600V | 25A | 1.1V @ 12.5A | 5µA @ 600V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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ON Semiconductor |
RECT BRIDGE GPP 35A 800V GBPC |
в производстве | Single Phase | Standard | 800V | 35A | 1.1V @ 17.5A | 5µA @ 800V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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ON Semiconductor |
RECT BRIDGE GPP 35A 200V GBPC |
в производстве | Single Phase | Standard | 200V | 35A | 1.1V @ 17.5A | 5µA @ 200V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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ON Semiconductor |
RECT BRIDGE GPP 35A 400V GBPC |
в производстве | Single Phase | Standard | 400V | 35A | - | 5µA @ 400V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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ON Semiconductor |
RECT BRIDGE GPP 35A 600V GBPC |
в производстве | Single Phase | Standard | 600V | 35A | 1.1V @ 17.5A | 5µA @ 600V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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ON Semiconductor |
RECT BRIDGE GPP 35A 400V GBPC-W |
в производстве | Single Phase | Standard | 400V | 35A | 1.1V @ 17.5A | 5µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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ON Semiconductor |
RECT BRIDGE GPP 35A 600V GBPC-W |
в производстве | Single Phase | Standard | 600V | 35A | 1.1V @ 17.5A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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ON Semiconductor |
RECT BRIDGE GPP 6A 400V GBU |
в производстве | Single Phase | Standard | 400V | 6A | 1V @ 6A | 5µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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ON Semiconductor |
RECT BRIDGE GPP 6A 50V GBU |
в производстве | Single Phase | Standard | 50V | 6A | 1V @ 6A | 5µA @ 50V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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ON Semiconductor |
IC BRIDGE RECT 400V 25A TS6P-4 |
в производстве | Single Phase | Standard | 400V | 25A | 1.1V @ 25A | 10µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, TS-6P | TS-6P |
