номер части Производитель / Марка Краткое описание Статус деталиУправляемая конфигурацияТип каналаКоличество драйверовТип воротНапряжение - ПоставкаНапряжение логики - VIL, VIHТекущий - пиковый выход (источник, раковина)Тип вводаВысокое боковое напряжение - макс (бутстрап)Время нарастания / падения (Тип)Рабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
ON Semiconductor IC MOSFET DRIVER DUAL 12V 8-SOIC в производствеHalf-BridgeSynchronous2N-Channel MOSFET4.6 V ~ 13.2 V0.8V, 2V
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Non-Inverting35V16ns, 11ns0°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
ON Semiconductor IC MOSFET DRIVER DUAL 12V 8-DFN в производствеHalf-BridgeSynchronous2N-Channel MOSFET4.6 V ~ 13.2 V0.8V, 2V
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Inverting, Non-Inverting35V20ns, 11ns-20°C ~ 150°C (TJ)SMD Поверхностный монтаж8-VFDFN Exposed Pad8-DFN (3x3)
ON Semiconductor IC DRIVER HI/LO 600V 8-SOIC в производствеHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.3V250mA, 500mANon-Inverting600V85ns, 35ns-40°C ~ 125°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
ON Semiconductor IC GATE DVR LOW DUAL 2A HS 8SOIC в производствеLow-SideIndependent2N-Channel MOSFET4.5 V ~ 18 V0.8V, 2V3A, 3AInverting, Non-Inverting
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12ns, 9ns-40°C ~ 125°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
ON Semiconductor IC HALF BRIDGE GATE DRIVER 8-SOP в производствеHalf-BridgeIndependent2IGBT, N-Channel MOSFET11 V ~ 20 V1.2V, 2.5V350mA, 650mANon-Inverting600V50ns, 30ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
ON Semiconductor IC GATE DVR DUAL 4A 8-SOIC в производствеLow-SideIndependent2N-Channel MOSFET4.5 V ~ 18 V0.8V, 2V5A, 5ANon-Inverting
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12ns, 9ns-40°C ~ 125°C (TA)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
ON Semiconductor IC GATE DVR SGL 9A LOSIDE 8-MLP в производствеLow-SideSingle1N-Channel MOSFET4.5 V ~ 18 V0.8V, 2V10.6A, 11.4ANon-Inverting
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23ns, 19ns-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-WDFN Exposed Pad8-MLP (3x3)
ON Semiconductor IC DRIVER GATE HI/LO SIDE SOP в производствеHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V1.2V, 2.5V4.5A, 4.5ANon-Inverting600V25ns, 20ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж14-SOIC (0.154", 3.90mm Width)14-SOP
ON Semiconductor IC GATE DVR HALF BRIDGE 14-SOIC в производствеHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.5V2.5A, 2.5ANon-Inverting600V40ns, 20ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж14-SOIC (0.154", 3.90mm Width)14-SOIC
ON Semiconductor IC GATE DRIVER HALF BRIDG 20SOIC в производствеHalf-Bridge3-Phase6IGBT, N-Channel MOSFET10 V ~ 20 V1V, 2.5V350mA, 650mANon-Inverting600V50ns, 30ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж20-SOIC (0.295", 7.50mm Width)20-SOIC
ON Semiconductor IC MOSFET DRIVER QFN в производствеHigh-Side or Low-SideSynchronous1N-Channel MOSFET4.5 V ~ 5.5 V
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Non-Inverting35V
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-40°C ~ 150°C (TJ)SMD Поверхностный монтаж36-TFQFN Exposed Pad36-QFN (6x4)
ON Semiconductor IC GATE DRIVER HALF BRIDG 20SOIC в производствеHalf-Bridge3-Phase6IGBT, N-Channel MOSFET10 V ~ 20 V1V, 2.5V350mA, 650mANon-Inverting200V50ns, 30ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж20-SOIC (0.295", 7.50mm Width)20-SOIC
ON Semiconductor IC GATE DVR HIGH SIDE 8-SOIC в производствеHigh-SideSingle1IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.5V4A, 4ANon-Inverting600V25ns, 15ns-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
ON Semiconductor IC MOSFET DVR SYNC VR12 8-DFN в производствеHalf-BridgeSynchronous2N-Channel MOSFET4.5 V ~ 13.2 V0.7V, 3.4V
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Non-Inverting35V16ns, 11ns0°C ~ 150°C (TJ)SMD Поверхностный монтаж8-VFDFN Exposed Pad8-DFN (2x2)
ON Semiconductor IC GATE DVR 2A HS LOW SIDE 6MLP в производствеLow-SideSingle1N-Channel MOSFET4.5 V ~ 18 V0.8V, 2V3A, 3AInverting, Non-Inverting
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13ns, 9ns-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-VDFN Exposed Pad6-MLP (2x2)
ON Semiconductor IC GATE DRVR SGL TTL 2A 6MLP в производствеLow-SideSingle1N-Channel MOSFET4.5 V ~ 18 V0.8V, 2V3A, 3AInverting, Non-Inverting
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13ns, 9ns-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-VDFN Exposed Pad6-MLP (2x2)
ON Semiconductor IC DRIVER HI/LO 600V 8-SOIC в производствеHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.3V250mA, 500mANon-Inverting600V85ns, 35ns-40°C ~ 125°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
ON Semiconductor IC HALF BRIDGE DVR HV OSC 8SOIC устарелыйHalf-BridgeSynchronous2N-Channel MOSFET8 V ~ 20 V
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500mA, 1ANon-Inverting600V40ns, 20ns-40°C ~ 125°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
ON Semiconductor IC MOSFET DRIVER 8SOIC в производствеLow-SideSingle1N-Channel MOSFET4.5 V ~ 20 V
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10A, 10AInverting, Non-Inverting
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4ns, 4ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
ON Semiconductor IC DRIVER MOSFET DUAL HS 8SOIC в производствеLow-SideIndependent2N-Channel MOSFET6.1 V ~ 18 V0.8V, 2.6V1.5A, 1.5ANon-Inverting
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36ns, 32ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
ON Semiconductor IC GATE DVR HALF BRIDGE 14-SOIC в производствеHalf-BridgeSynchronous2IGBT, N-Channel MOSFET15 V ~ 20 V1.2V, 2.9V350mA, 650mANon-Inverting600V50ns, 30ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж14-SOIC (0.209", 5.30mm Width)14-SOP
ON Semiconductor IC DRIVER HI/LOW SIDE HV 8-SOIC в производствеHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.3V250mA, 500mANon-Inverting600V85ns, 35ns-40°C ~ 125°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
ON Semiconductor IC DRIVER GATE SINGLE IGBT 8SOIC в производствеLow-SideSingle1IGBT, N-Channel MOSFET11 V ~ 20 V1.2V, 3.2V1A, 2AInverting
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17ns, 17ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
ON Semiconductor IC DRIVER MOSFET DUAL HS 8SOIC в производствеLow-SideIndependent2N-Channel MOSFET6.1 V ~ 18 V0.8V, 2.6V1.5A, 1.5ANon-Inverting
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36ns, 32ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
ON Semiconductor IC MOSFET DRIVER VR12.5 8DFN в производствеHalf-BridgeSynchronous2N-Channel MOSFET4.5 V ~ 5.5 V0.6V, 3.3V
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Non-Inverting40V16ns, 11ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-VFDFN Exposed Pad8-DFN (2x2)
ON Semiconductor IC MOSFET DVR SYNC VR12 8-DFN в производствеHalf-BridgeSynchronous2N-Channel MOSFET4.5 V ~ 13.2 V0.7V, 3.4V
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Non-Inverting35V16ns, 11ns0°C ~ 150°C (TJ)SMD Поверхностный монтаж8-VFDFN Exposed Pad8-DFN (2x2)
ON Semiconductor IC GATE DRVR SGL CMOS 2A 6MLP в производствеLow-SideSingle1N-Channel MOSFET4.5 V ~ 18 V
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3A, 3AInverting, Non-Inverting
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13ns, 9ns-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-VDFN Exposed Pad6-MLP (2x2)
ON Semiconductor IC MOSFET DRIVER DUAL HS 8-SOIC в производствеLow-SideIndependent2N-Channel MOSFET6.5 V ~ 18 V0.8V, 2.6V1.5A, 1.5AInverting
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31ns, 32ns0°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
ON Semiconductor IC GATE DRIVER HI SIDE 8-SOIC в производствеHigh-SideSingle1IGBT, N-Channel MOSFET10 V ~ 20 V
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250mA, 500mAInverting600V15ns, 10ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
ON Semiconductor IC DRIVER HI/LOW SIDE HV в производствеHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.3V250mA, 500mANon-Inverting200V85ns, 35ns-40°C ~ 125°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
ON Semiconductor IC DRIVER HI/LOW SIDE HV в производствеHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.3V250mA, 500mANon-Inverting200V85ns, 35ns-40°C ~ 125°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
ON Semiconductor IC GATE DRIVER DUAL 2A 8-SOIC в производствеLow-SideSynchronous2N-Channel MOSFET4.5 V ~ 18 V0.8V, 2V3A, 3AInverting
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12ns, 9ns-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
ON Semiconductor IC GATE DVR LOW DUAL 4A HS 8MLP в производствеLow-SideIndependent2N-Channel MOSFET4.5 V ~ 18 V0.8V, 2V5A, 5AInverting
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12ns, 9ns-40°C ~ 125°C (TA)SMD Поверхностный монтаж8-WDFN Exposed Pad8-MLP (3x3)
ON Semiconductor HIGH CURRENT IGBT GATE DRIVER в производствеLow-SideSingle1IGBT20V
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4A, 6A
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18ns, 19ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
ON Semiconductor HIGH CURRENT IGBT GATE DRIVER в производствеLow-SideSingle1IGBT20V
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7.8A, 6.8A
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18ns, 19ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
ON Semiconductor IC GATE DRIVER DUAL 4A 8-SOIC в производствеLow-SideSynchronous2N-Channel MOSFET4.5 V ~ 18 V0.8V, 2V5A, 5ANon-Inverting
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12ns, 9ns-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
ON Semiconductor IC GATE DVR HI SIDE 8-SOIC в производствеHigh-SideSingle1IGBT, N-Channel MOSFET4.5 V ~ 20 V
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450mA, 450mAInverting300V65ns, 25ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
ON Semiconductor IC MOSFET DVR SYNC VR12 8-SOIC в производствеHalf-BridgeSynchronous2N-Channel MOSFET4.5 V ~ 13.2 V0.7V, 3.4V
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Non-Inverting35V16ns, 11ns0°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
ON Semiconductor IC MOSFET DVR SYNC VR12 8-SOIC в производствеHalf-BridgeSynchronous2N-Channel MOSFET4.5 V ~ 13.2 V0.7V, 3.4V
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Non-Inverting35V16ns, 11ns0°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
ON Semiconductor IC MOSFET DRIVER DUAL 12V 8-DFN в производствеHalf-BridgeSynchronous2N-Channel MOSFET4.6 V ~ 13.2 V0.8V, 2V
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Inverting, Non-Inverting35V20ns, 11ns0°C ~ 150°C (TJ)SMD Поверхностный монтаж8-VFDFN Exposed Pad8-DFN (3x3)
ON Semiconductor IC MOSFET DRIVER DUAL 12V 8SOIC в производствеHalf-BridgeSynchronous2N-Channel MOSFET4.6 V ~ 13.2 V0.8V, 2V
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Inverting, Non-Inverting35V20ns, 11ns0°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
ON Semiconductor IC MOSFET DRIVER BUCK DUAL QFN в производствеHalf-BridgeSynchronous2N-Channel MOSFET4.5 V ~ 13.2 V1V, 2V
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Non-Inverting35V16ns, 11ns0°C ~ 150°C (TJ)SMD Поверхностный монтаж8-VFDFN Exposed Pad8-DFN (3x3)
ON Semiconductor IC MOSFET DRIVER DUAL 12V 8SOIC в производствеHalf-BridgeSynchronous2N-Channel MOSFET4.6 V ~ 13.2 V0.8V, 2V
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Inverting, Non-Inverting35V20ns, 11ns-20°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
ON Semiconductor IC GATE DRVR SGL CMOS 2A SOT23-5 в производствеLow-SideSingle1N-Channel MOSFET4.5 V ~ 18 V
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3A, 3AInverting, Non-Inverting
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13ns, 9ns-55°C ~ 150°C (TJ)SMD Поверхностный монтажSC-74A, SOT-753SOT-23-5
ON Semiconductor IC DRIVER HI/LOW SIDE HV 8-SOIC в производствеHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.3V250mA, 500mANon-Inverting600V85ns, 35ns-40°C ~ 125°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
ON Semiconductor HIGH SIDE GATE DRIVER в производстве
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SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
ON Semiconductor IC DRIVER HI/LO 600V 10DFN в производствеHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.3V250mA, 500mANon-Inverting200V85ns, 35ns-40°C ~ 125°C (TJ)SMD Поверхностный монтаж10-VFDFN Exposed Pad10-DFN (3x3)
ON Semiconductor IC DRIVER HI/LO 600V 10DFN в производствеHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.3V250mA, 500mANon-Inverting600V85ns, 35ns-40°C ~ 125°C (TJ)SMD Поверхностный монтаж10-VDFN Exposed Pad10-DFN (4x4)
ON Semiconductor IC HALF BRIDGE DVR HV OSC 8SOIC устарелыйHalf-BridgeSynchronous2N-Channel MOSFET8 V ~ 20 V
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500mA, 1ANon-Inverting600V40ns, 20ns-40°C ~ 125°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
ON Semiconductor LOW-COST HIGH VOLTAGE DUA в производстве
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SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
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