номер части Производитель / Марка Краткое описание Статус деталиТип IGBTНапряжение - Разрыв эмиттера коллектора (макс.)Ток - коллектор (Ic) (макс.)Текущий - коллектор импульсный (Icm)Vce (вкл.) (Макс.) @ Vge, IcМощность - макс.Энергия переключенияТип вводаВорота затвораTd (вкл. / Выкл.) При 25 ° CУсловия тестированияВремя обратного восстановления (trr)Рабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
ON Semiconductor IGBT 1200V 5.3A 60W TO252AA в производствеNPT1200V5.3A6A2.9V @ 15V, 1A60W70µJ (on), 90µJ (off)Standard14nC15ns/67ns960V, 1A, 82 Ohm, 15V
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-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-252-3, DPak (2 Leads + Tab), SC-63TO-252AA
ON Semiconductor IGBT 390V 46A 250W TO263AB в производстве
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390V46A
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1.6V @ 4V, 10A250W
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Logic32nC-/10.8µs300V, 1 kOhm, 5V
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-40°C ~ 175°C (TJ)SMD Поверхностный монтажTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB
ON Semiconductor IGBT 600V 80A 349W TO247 в производствеField Stop600V80A120A2.5V @ 15V, 40A349W1.3mJ (on), 260µJ (off)Standard119nC12ns/92ns400V, 40A, 6 Ohm, 15V90ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
ON Semiconductor IGBT 600V 75A 463W TO247 в производстве
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600V75A240A2.6V @ 15V, 30A463W280µJ (on), 240µJ (off)Standard225nC25ns/150ns390V, 30A, 3 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
ON Semiconductor IGBT 1200V 100A 535W TO247 в производствеTrench Field Stop1200V100A200A2.2V @ 15V, 50A535W4.4mJ (on), 1.4mJ (off)Standard311nC118ns/282ns600V, 50A, 10 Ohm, 15V256ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 400V 26.9A 166W DPAK в производстве
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400V26.9A
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1.2V @ 4V, 6A166W
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Logic24nC-/5.3µs300V, 6.5A, 1 kOhm, 5V
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-40°C ~ 175°C (TJ)SMD Поверхностный монтажTO-252-3, DPak (2 Leads + Tab), SC-63TO-252AA
ON Semiconductor IGBT 600V 30A 117W TO220-3 в производствеNPT600V30A120A1.7V @ 15V, 15A117W550µJ (on), 350µJ (off)Standard88nC65ns/170ns400V, 15A, 22 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-220-3TO-220
ON Semiconductor IGBT 600V 40A 208W D2PAK в производствеField Stop600V40A60A2.85V @ 15V, 20A208W310µJ (on), 130µJ (off)Standard63nC10ns/90ns400V, 20A, 10 Ohm, 15V111ns-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD²PAK
ON Semiconductor IGBT 650V 80A 267W TO-247 в производствеTrench Field Stop650V80A120A2.4V @ 15V, 40A267W1.16mJ (on), 280µJ (off)Standard35nC16ns/37ns400V, 40A, 6 Ohm, 15V34ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 600V 70A 290W TO247 в производстве
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600V70A280A2.7V @ 15V, 20A290W105µJ (on), 150µJ (off)Standard142nC15ns/73ns390V, 20A, 3 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 1200V 160A TO247 в производствеTrench Field Stop1200V160A160A2V @ 15V, 40A454W1.5mJ (on), 1.5mJ (off)Standard220nC18ns/150ns600V, 40A, 10 Ohm, 15V86ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
ON Semiconductor IGBT 650V 120A 349W TO-247 в производствеTrench Field Stop650V120A180A2.1V @ 15V, 60A349W1.69mJ (on), 630µJ (off)Standard102nC26ns/87ns400V, 60A, 6 Ohm, 15V34.6ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247 Long Leads
ON Semiconductor IGBT 650V 150A 375W TO247 в производствеTrench Field Stop650V150A300A
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375W760µJ (on), 180µJ (off)Standard128nC
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43ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 600V 60A 208W TO247 устарелый
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600V60A220A1.9V @ 15V, 30A208W550µJ (on), 680µJ (off)Standard170nC36ns/137ns480V, 30A, 3 Ohm, 15V55ns-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 400V 150A ECH8 в производстве
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400V
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150A7V @ 2.5V, 100A
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Standard
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-
-
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150°C (TJ)SMD Поверхностный монтаж8-SMD, Flat Lead8-ECH
ON Semiconductor IGBT 480V 51A 300W D2PAK в производстве
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480V51A
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1.6V @ 4V, 10A300W
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Logic32nC-/10.8µs300V, 1 kOhm, 5V
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-40°C ~ 175°C (TJ)SMD Поверхностный монтажTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB
ON Semiconductor IGBT 1200V 21A 167W TO247 устарелыйNPT1200V21A40A2.7V @ 15V, 5A167W450µJ (on), 390µJ (off)Standard53nC22ns/160ns960V, 5A, 25 Ohm, 15V65ns-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 600V 80A 290W TO247 в производствеField Stop600V80A120A2.9V @ 15V, 40A290W1.13mJ (on), 310µJ (off)Standard120nC25ns/115ns400V, 40A, 10 Ohm, 15V45ns-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 1200V 43A 298W TO247 устарелыйNPT1200V43A80A2.4V @ 15V, 11A298W950µJ (on), 1.3mJ (off)Standard100nC23ns/180ns960V, 11A, 10 Ohm, 15V70ns-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 600V 60A 167W TO247 в производствеTrench600V60A120A1.7V @ 15V, 30A167W650µJ (on), 650µJ (off)Standard170nC81ns/190ns400V, 30A, 10 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 650V 40A TO-247 в производствеTrench Field Stop650V80A160A2.2V @ 15V, 40A300W360µJ (off)Standard135nC-/140ns400V, 40A, 10 Ohm, 15V465ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
ON Semiconductor IGBT 1350V 40A 394W TO247 в производствеTrench Field Stop1350V40A120A2.65V @ 15V, 20A394W600µJ (off)Standard234nC-/245ns600V, 20A, 10 Ohm, 15V
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-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 1200V 80A 384W TO247 в производствеTrench Field Stop1200V80A120A2.55V @ 15V, 40A384W950µJ (off)Standard225nC-/230ns600V, 40A, 10 Ohm, 15V
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-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 600V 70A 290W TO247 устарелый
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600V70A280A2.7V @ 15V, 20A290W105µJ (on), 150µJ (off)Standard142nC15ns/73ns390V, 20A, 3 Ohm, 15V35ns-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 1200V 80A 535W TO247 в производствеTrench Field Stop1200V80A200A2.4V @ 15V, 40A535W3.4mJ (on), 1.1mJ (off)Standard313nC116ns/286ns600V, 40A, 10 Ohm, 15V240ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 600V 63A 208W TO247 устарелый
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600V63A252A1.8V @ 15V, 30A208W1.05mJ (on), 2.5mJ (off)Standard162nC
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60ns-40°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 600V 80A 250W TO264 в производстве
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600V80A150A2.8V @ 15V, 50A250W1.68mJ (on), 1.03mJ (off)Standard145nC26ns/66ns300V, 50A, 5.9 Ohm, 15V100ns-55°C ~ 150°C (TJ)Through HoleTO-264-3, TO-264AATO-264
ON Semiconductor IGBT 1200V 60A 339W TO3P в производствеTrench Field Stop1200V60A90A2V @ 15V, 30A339W
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Standard208nC
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730ns-55°C ~ 150°C (TJ)Through HoleTO-3P-3, SC-65-3TO-3PN
ON Semiconductor 650V/60A IGBT FSII в производствеField Stop650V100A240A2V @ 15V, 60A595W1.59mJ (on), 660µJ (off)Standard318nC117ns/265ns400V, 60A, 10 Ohm, 15V96ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
ON Semiconductor IGBT 1200V 30A 186W TO3P в производствеNPT and Trench1200V30A45A2.4V @ 15V, 15A186W3mJ (on), 600µJ (off)Standard120nC15ns/160ns600V, 15A, 10 Ohm, 15V330ns-55°C ~ 150°C (TJ)Through HoleTO-3P-3, SC-65-3TO-3P
ON Semiconductor IGBT 600V 80A 290W TO247 в производствеField Stop600V80A120A2.4V @ 15V, 40A290W1.19mJ (on), 460µJ (off)Standard120nC24ns/112ns400V, 40A, 10 Ohm, 15V45ns-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 600V 80A 290W TO247 в производствеField Stop600V80A120A2.4V @ 15V, 40A290W1.19mJ (on), 460µJ (off)Standard120nC24ns/112ns400V, 40A, 10 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 15A 1200V TO-247 в производствеTrench Field Stop1200V30A60A2.45V @ 15V, 15A278W360µJ (off)Standard120nC-/130ns600V, 15A, 10 Ohm, 15V
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-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
ON Semiconductor IGBT 600V 70A 290W TO220AB устарелый
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600V70A280A2.7V @ 15V, 20A290W105µJ (on), 150µJ (off)Standard142nC15ns/73ns390V, 20A, 3 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-220-3TO-220AB
ON Semiconductor IGBT TRENCH 650V 140A TO247 в производствеTrench650V140A140A2.45V @ 15V, 50A300W1.25mJ (on), 530µJ (off)Standard128nC75ns/128ns400V, 50A, 10 Ohm, 15V70ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 650V 80A 290W TO247 в производствеField Stop650V80A120A2.4V @ 15V, 40A290W1.19mJ (on), 460µJ (off)Standard120nC24ns/112ns400V, 40A, 10 Ohm, 15V45ns-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 1200V 15A TO247 в производствеTrench Field Stop1200V30A60A2.5V @ 15V, 15A333W340µJ (off)Standard160nC-/170ns600V, 15A, 10 Ohm, 15V
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-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor FS4TIGBT TO247 40A 650V в производствеTrench Field Stop650V80A120A1.67V @ 15V, 40A231W989µJ (on), 310µJ (off)Standard306nC32ns/271ns400V, 40A, 6 Ohm, 15V89ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
ON Semiconductor IGBT 600V 30A TO247 в производствеTrench Field Stop600V60A150A2.3V @ 15V, 30A250W280µJ (off)Standard130nC70ns/140ns400V, 30A, 10 Ohm, 15V400ns-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 650V 60A 167W TO247 в производствеField Stop650V70A120A2V @ 15V, 35A300W840µJ (on), 280µJ (off)Standard125nC72ns/132ns400V, 35A, 10 Ohm, 15V
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-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
ON Semiconductor IGBT 20A 1200V TO-247 в производствеTrench Field Stop1200V40A80A2.65V @ 15V, 20A341W480µJ (off)Standard150nC-/170ns600V, 20A, 10 Ohm, 15V
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-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
ON Semiconductor IGBT 1200V 50A 428W TO247-3 в производствеTrench Field Stop1200V50A100A2.4V @ 15V, 25A428W1.74mJ (on), 560µJ (off)Standard225nC40ns/490ns600V, 25A, 23 Ohm, 15V60ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247 Long Leads
ON Semiconductor 650V FS4 TRENCH IGBT в производствеTrench Field Stop650V100A200A2.1V @ 15V, 50A268W180µJ (on), 45µJ (off)Standard99nC22ns/105ns400V, 12.5A, 4.7 Ohm, 15V31ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
ON Semiconductor IGBT 1000V 50A 156W TO3P в производствеNPT and Trench1000V50A100A2.9V @ 15V, 60A156W
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Standard275nC
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1.5µs-55°C ~ 150°C (TJ)Through HoleTO-3P-3, SC-65-3TO-3P
ON Semiconductor IGBT 1200V 100A TO247 в производствеTrench Field Stop1200V100A100A2.4V @ 15V, 25A349W1mJ (on), 700µJ (off)Standard136nC15ns/109ns600V, 25A, 10 Ohm, 15V114ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
ON Semiconductor IGBT 600V 40A 165W TO247 устарелый
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600V40A160A2V @ 15V, 20A165W475µJ (on), 1.05mJ (off)Standard80nC
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480V, 20A, 10 Ohm, 15V
-
-40°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 600V 60A 208W TO247 в производстве
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600V60A220A1.9V @ 15V, 30A208W500µJ (on), 680µJ (off)Standard170nC36ns/137ns480V, 30A, 3 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 650V 100A 340W TO-247AB устарелыйTrench Field Stop650V100A150A2.3V @ 15V, 50A340W2.7mJ (on), 740µJ (off)Standard230nC32ns/160ns400V, 50A, 6 Ohm, 15V53ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT FIELD STOP 1200V TO247-4 в производствеField Stop1200V160A160A2.4V @ 15V, 40A536W1.7mJ (on), 1.1mJ (off)Standard313nC30ns/145ns600V, 40A, 10 Ohm, 15V240ns-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4L
ON Semiconductor IGBT 600V 120A 298W TO3P в производствеField Stop600V120A180A2.4V @ 15V, 60A298W1.81mJ (on), 810µJ (off)Standard188nC23ns/130ns400V, 60A, 5 Ohm, 15V47ns-55°C ~ 150°C (TJ)Through HoleTO-3P-3, SC-65-3TO-3P
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