номер части Производитель / Марка Краткое описание Статус деталиТип RFТопологиясхемаДиапазон частотизоляцияВносимая потеряЧастота испытанийP1dBIIP3Особенностиполное сопротивлениеНапряжение - ПоставкаРабочая ТемператураУпаковка / чехолПакет устройств поставщика
pSemi IC RF SWITCH SPDT 50 OHM SC70-6 в производствеGeneral PurposeReflectiveSPDT10MHz ~ 3GHz20dB0.5dB2GHz29dBm55dBmSingle/Dual Line Control50 Ohm1.8 V ~ 3.3 V-40°C ~ 85°C6-TSSOP, SC-88, SOT-363SC-70-6
pSemi IC RF SWITCH SPDT 50 OHM SC70-6 в производствеGeneral PurposeReflectiveSPDT10MHz ~ 3GHz20dB0.5dB2GHz30.5dBm55dBmSingle/Dual Line Control50 Ohm1.8 V ~ 3.3 V-40°C ~ 85°C6-TSSOP, SC-88, SOT-363SC-70-6
pSemi IC RF SWITCH SPDT 75 OHM 12QFN в производствеCATVAbsorptiveSPDT5MHz ~ 2.2GHz57dB1.7dB2.2GHz23.5dBm47.5dBm
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75 Ohm2.7 V ~ 3.63 V-40°C ~ 85°C12-WFQFN Exposed Pad12-QFN (3x3)
pSemi IC RF SWITCH SPDT SC70-6 в производствеGeneral PurposeReflectiveSPDT10MHz ~ 3GHz13dB0.5dB3GHz, 2GHz30.5dBm55dBmSingle/Dual Line Control50 Ohm1.8 V ~ 3.3 V-40°C ~ 105°C6-TSSOP, SC-88, SOT-363SC-70-6
pSemi IC RF SWITCH SPDT 50 OHM 12QFN в производствеGeneral PurposeReflectiveSPDT100MHz ~ 6GHz17dB0.9dB6GHz
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70dBm
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50 Ohm2.3 V ~ 5.5 V-40°C ~ 85°C12-UFQFN Exposed Pad12-QFN (2x2)
pSemi IC RF SWITCH SPDT 50 OHM SC70-6 в производствеGeneral PurposeReflectiveSPDTDC ~ 3GHz23dB0.9dB2GHz27dBm45dBm (min)Single Line Control50 Ohm2.7 V ~ 3.3 V-40°C ~ 85°C6-TSSOP, SC-88, SOT-363SC-70-6
pSemi IC RF SWITCH SPDT 8-MSOP в производствеGeneral PurposeAbsorptiveSPDT10MHz ~ 3GHz43dB0.75dB3GHz30.5dBm59dBmDC Blocked, Single/Dual Line Control50 Ohm3 V ~ 3.6 V, 4.5 V ~ 5.5 V-40°C ~ 85°C8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad8-MSOP-EP
pSemi IC RF SWITCH SPDT 50 OHM 16QFN в производстве802.11a/b/g/n/acAbsorptiveSPDT100MHz ~ 6GHz41dB0.95dB6GHz
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65dBm
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50 Ohm2.3 V ~ 5.5 V-40°C ~ 85°C16-VFQFN Exposed Pad16-QFN (3x3)
pSemi IC RF SWITCH SPDT 75 OHM 20-QFN в производствеCATVAbsorptiveSPDT5MHz ~ 3GHz52dB1.1dB2.2GHz31dBm55dBm
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75 Ohm2.7 V ~ 3.3 V-40°C ~ 85°C20-VFQFN Exposed Pad20-QFN (4x4)
pSemi IC RF SWITCH SP3T 50 OHM 8DFN в производствеGeneral PurposeReflectiveSP3T100MHz ~ 3GHz30dB0.55dB2.5GHz
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66dBmDC Blocked50 Ohm
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-40°C ~ 85°C8-UFDFN Exposed Pad8-DFN (1.5x1.5)
pSemi IC RF SWITCH SP4T 50 OHM 16QFN в производствеCDMA, GSM
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SP4T100MHz ~ 3GHz29dB0.45dB2GHz, 1GHz
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68dBm
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50 Ohm2.65 V ~ 2.85 V-40°C ~ 85°C16-WFQFN Exposed Pad16-QFN (3x3)
pSemi IC RF SWITCH SP4T 50 OHM 16QFN в производствеGeneral PurposeReflectiveSP4T50MHz ~ 3GHz22dB0.85dB3GHz41.5dBm66dBmDC Blocked50 Ohm2.65 V ~ 3.3 V-40°C ~ 85°C16-WFQFN Exposed Pad16-QFN (3x3)
pSemi IC RF SWITCH SPDT 50 OHM 6-DFN в производствеGeneral PurposeReflectiveSPDTDC ~ 4GHz32dB0.7dB2GHz27dBm45dBmSingle Line Control50 Ohm2.7 V ~ 3.3 V-40°C ~ 85°C6-VDFN Exposed Pad6-DFN (3x3)
pSemi IC RF SWITCH SPDT 12QFN в производстве
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SPDT100MHz ~ 6GHz42dB0.9dB1GHz, 6GHz34dBm73dBm
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50 Ohm2.3 V ~ 5.5 V-40°C ~ 105°C12-UFQFN Exposed Pad12-QFN (2x2)
pSemi IC RF SWITCH SP4T 24QFN в производстве3G/4GAbsorptiveSP4T30MHz ~ 6GHz61dB1.1dB900MHz
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58dBm
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50 Ohm3.3V-40°C ~ 105°C24-WFQFN Exposed Pad24-QFN (4x4)
pSemi IC RF SWITCH SP4T 32-LGA в производствеWLANAbsorptiveSP4T10MHz ~ 8GHz45dB0.8dB3GHz
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58dBm
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50 Ohm3 V ~ 3.55 V-40°C ~ 85°C32-VFQFN Exposed Pad32-LGA (5x5)
pSemi IC RF SWITCH SPDT 20LGA в производстве
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AbsorptiveSPDT100MHz ~ 6GHz50dB1.6dB6GHz
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65dBm
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50 Ohm3V-40°C ~ 105°C20-TFLGA Exposed Pad20-LGA (4x4)
pSemi IC RF SWITCH SPDT 16QFN в производстве
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SPDT9kHz ~ 8GHz45dB0.85dB3GHz
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66dBm
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50 Ohm2.3 V ~ 5.5 V-40°C ~ 85°C16-VFQFN Exposed Pad16-QFN (3x3)
pSemi IC RF SWITCH SPDT 50 OHM 16-QFN в производствеGeneral PurposeAbsorptiveSPDT9kHz ~ 13GHz17dB1.85dB13GHz
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65dBm
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50 Ohm2.3 V ~ 5.5 V-40°C ~ 85°C16-VFQFN Exposed Pad16-QFN (3x3)
pSemi IC RF SWITCH SPDT 50 OHM 16-QFN в производствеATEAbsorptiveSPDT9kHz ~ 13GHz18dB2dB13GHz
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66dBm
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50 Ohm2.3 V ~ 5.5 V-40°C ~ 85°C16-VFQFN Exposed Pad16-QFN (3x3)
pSemi IC RF SWITCH SPDT 29LGA в производстве
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SPDT9kHz ~ 26.5GHz22dB
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2.5GHz,-
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59dBm
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50 Ohm2.3 V ~ 5.5 V-40°C ~ 85°C29-TFLGA Exposed Pad29-LGA (4x4)
pSemi IC RF SWITCH SPDT 50 OHM 32QFN в производствеGeneral PurposeReflectiveSPDT30MHz ~ 2.7GHz24dB0.7dB2.7GHz
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81dBm
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50 Ohm2.3 V ~ 5.5 V-40°C ~ 85°C32-VFQFN Exposed Pad32-QFN (5x5)
pSemi RF SWITCH 20-QFN в производстве
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AbsorptiveSPDT0Hz ~ 8GHz42dB1.1dB6GHz38dBm62dBm
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50 Ohm10 V ~ 17 V-40°C ~ 85°C20-VFQFN Exposed Pad20-QFN (4x4)
pSemi IC RF SWITCH SPDT FCD в производстве
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ReflectiveSPDT10MHz ~ 40GHz
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5.5dB-, 40GHz
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50dBm
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50 Ohm3.1 V ~ 3.5 V-40°C ~ 85°CDieDie
pSemi IC RF SWITCH SPDT 50 OHM 8-MSOP в производствеGeneral PurposeReflectiveSPDT10MHz ~ 3GHz40dB0.75dB3GHz30.5dBm59dBmDC Blocked, Single/Dual Line Control50 Ohm3 V ~ 3.6 V, 4.5 V ~ 5.5 V-40°C ~ 85°C8-TSSOP, 8-MSOP (0.118", 3.00mm Width)8-MSOP
pSemi IC RF SWITCH SPDT 75OHM 20-QFN в производствеCATVAbsorptiveSPDT5MHz ~ 2.2GHz53.6dB1.7dB2.2GHz32dBm53dBm
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75 Ohm2.7 V ~ 3.3 V-40°C ~ 85°C20-VFQFN Exposed Pad20-QFN (4x4)
pSemi IC RF SWITCH SPST 75OHM 6-DFN в производствеCATVAbsorptiveSPST1MHz ~ 3GHz63dB0.7dB1GHz30dBm50dBm (min)Single Line Control75 Ohm2.7 V ~ 3.3 V-40°C ~ 85°C6-VDFN Exposed Pad6-DFN (3x3)
pSemi SPDT LOW IL HIGH-LINEARITY REF в производстве
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SPDT5MHz ~ 6GHz20dB0.75dB6GHz
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50 Ohm2.3 V ~ 5.5 V-40°C ~ 105°C12-WFQFN Exposed Pad12-QFN (3x3)
pSemi IC RF SWITCH SP4T 16-QFN в производствеWCDMAReflectiveSP4T50MHz ~ 3GHz32dB0.5dB1GHz37dBm68dBm
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50 Ohm2.65 V ~ 3.3 V-40°C ~ 105°C16-WFQFN Exposed Pad16-QFN (3x3)
pSemi SPDT DOCSIS3.X REFLECTIVE RF SWI в производстве
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ReflectiveSPDT5MHz ~ 1.79GHz
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75 Ohm2.3 V ~ 5.5 V-40°C ~ 85°C12-WFQFN Exposed Pad12-QFN (3x3)
pSemi SPDT DOCSIS3.X REFLECTIVE RF S в производстве
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ReflectiveSPDT5MHz ~ 1.79GHz54dB0.3dB204MHz, 1.2GHz
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75 Ohm2.3 V ~ 5.5 V-40°C ~ 85°C12-WFQFN Exposed Pad12-QFN (3x3)
pSemi IC RF SWITCH SPDT в производствеCellularAbsorptiveSPDT700MHz ~ 3.8GHz44dB0.8dB3GHz
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65dBm
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2.3 V ~ 5.5 V-40°C ~ 105°C16-VFQFN Exposed Pad16-QFN (3x3)
pSemi IC RF SWITCH SP5T 50 OHM 24QFN в производствеGeneral PurposeAbsorptiveSP5T450MHz ~ 4GHz45dB1.6dB4GHz
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57dBm
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50 Ohm2.3 V ~ 5.5 V-40°C ~ 105°C24-WFQFN Exposed Pad24-QFN (4x4)
pSemi RF SWITCH ABSORPTIVE SP4T 32LGA в производстве
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AbsorptiveSP4T10Hz ~ 8GHz31dB1.2dB8GHz33dBm58dBm
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50 Ohm3.3V-40°C ~ 85°C32-TFLGA Exposed Pad32-LGA (5x5)
pSemi HIGH POWER REFLECTIVE 50RF SWITCH в производстве
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SP5T30MHz ~ 1GHz30dB (min)0.8dB1GHz
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42dBm
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50 Ohm2.3 V ~ 5.5 V-40°C ~ 85°C32-VFQFN Exposed Pad32-QFN (5x5)
pSemi IC RF SWITCH SPDT 50 OHM 32QFN в производствеGeneral PurposeReflectiveSPDT100MHz ~ 2.7GHz24dB0.8dB2.7GHz
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76dBm
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50 Ohm2.3 V ~ 5.5 V-40°C ~ 85°C32-VFQFN Exposed Pad32-QFN (5x5)
pSemi IC RF SWITCH SPDT 50 OHM 20-QFN в производствеGeneral PurposeAbsorptiveSPDTDC ~ 3GHz44dB1.2dB3GHz31dBm55dBm
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50 Ohm2.7 V ~ 3.3 V-40°C ~ 85°C20-VFQFN Exposed Pad20-QFN (4x4)
pSemi IC RF SWITCH SPDT 50OHM 6DFN в производстве802.11a/b/g/n/acReflectiveSPDT100MHz ~ 6GHz48dB0.8dB2.4GHz, 2.5GHz41dBm61dBm
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50 Ohm2.3 V ~ 5.5 V-40°C ~ 105°C6-UFDFN Exposed Pad6-DFN (1.5x1.5)
pSemi IC RF SWITCH SPDT 75 OHM 12QFN в производствеCATVAbsorptiveSPDT5MHz ~ 2.2GHz55dB0.65dB2.2GHz
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60dBm
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75 Ohm2.3 V ~ 5.5 V-40°C ~ 85°C12-WFQFN Exposed Pad12-QFN (3x3)
pSemi IC RF SWITCH SPDT 75OHM 20-QFN в производствеCATVAbsorptiveSPDT5MHz ~ 2.2GHz47dB1.1dB2.2GHz26dBm50dBm
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75 Ohm2.7 V ~ 3.3 V-40°C ~ 85°C20-VFQFN Exposed Pad20-QFN (4x4)
pSemi IC RF SWITCH SPDT 75 OHM 20QFN в производствеGeneral PurposeAbsorptiveSPDT5MHz ~ 3GHz52dB1.1dB2.2GHz31dBm55dBm
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75 Ohm2.7 V ~ 3.3 V-40°C ~ 85°C20-VFQFN Exposed Pad20-QFN (4x4)
pSemi IC RF SWITCH SP5T 24QFN в производствеGeneral PurposeAbsorptiveSP5T450MHz ~ 4GHz50dB2.25dB4GHz35dBm58dBmDC Blocked50 Ohm2.7 V ~ 3.3 V-40°C ~ 85°C24-WFQFN Exposed Pad24-QFN (4x4)
pSemi IC RF SWITCH SPDT 50 OHM 32-QFN в производствеGeneral PurposeReflectiveSP5T100MHz ~ 1GHz36dB0.8dB1GHz
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42dBm
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50 Ohm2.3 V ~ 5.5 V-40°C ~ 85°C32-VFQFN Exposed Pad32-QFN (5x5)
pSemi IC RF SWITCH SP5T 32QFN Discontinued at -General PurposeReflectiveSP5T30MHz ~ 1GHz29dB0.4dB1GHz
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33dBm
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50 Ohm2.7 V ~ 5.5 V-40°C ~ 85°C32-VFQFN Exposed Pad32-QFN (5x5)
pSemi IC RF SWITCH SPDT 50 OHM SC70-6 устарелыйGeneral PurposeReflectiveSPDT10MHz ~ 3GHz23dB0.9dB2GHz27dBm45dBmSingle/Dual Line Control50 Ohm2.7 V ~ 3.3 V-40°C ~ 85°C6-TSSOP, SC-88, SOT-363SC-70-6
pSemi IC RF SWITCH SP4T 50 OHM 16-QFN устарелыйGeneral PurposeReflectiveSP4T100MHz ~ 3GHz27.5dB0.55dB2.2GHz
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68dBmDC Blocked50 Ohm2.65 V ~ 2.85 V-40°C ~ 85°C16-WFQFN Exposed Pad16-QFN (3x3)
pSemi IC RF SWITCH SPDT 50 OHM 8-MSOP устарелыйGeneral PurposeReflectiveSPDT10MHz ~ 3GHz25dB0.45dB2GHz14.5dBm33.5dBmDC Blocked, Single Line Control50 Ohm2.7 V ~ 3.3 V-40°C ~ 85°C8-TSSOP, 8-MSOP (0.118", 3.00mm Width)8-MSOP
pSemi IC RF SWITCH SPDT 75OHM 8-MSOP устарелыйCATVReflectiveSPDTDC ~ 3GHz34dB0.6dB2GHz52dBm52dBmSingle Line Control75 Ohm2.7 V ~ 3.3 V-40°C ~ 85°C8-TSSOP, 8-MSOP (0.118", 3.00mm Width)8-MSOP
pSemi IC RF SWITCH SPDT 50 OHM 6-DFN устарелыйGeneral PurposeReflectiveSPDTDC ~ 4GHz35dB0.45dB2GHz32dBm50dBm (min)Single Line Control50 Ohm2.7 V ~ 3.3 V-40°C ~ 85°C6-VDFN Exposed Pad6-DFN (3x3)
pSemi IC RF SWITCH SPDT 50 OHM 20-QFN устарелыйGeneral PurposeReflectiveSPDT9kHz ~ 6GHz21dB0.9dB6GHz34dBm50dBmSingle Line Control50 Ohm2.5 V ~ 3 V-40°C ~ 85°C20-VFQFN Exposed Pad20-QFN (4x4)
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