номер части Производитель / Марка Краткое описание Статус деталиТип полевого транзистораТехнологииСлив к источнику напряжения (Vdss)Ток - непрерывный слив (Id) при 25 ° CDrive Voltage (Max Rds On, Min Rds On)Rds On (Макс.) @ Id, VgsVgs (th) (Max) @ IdЗаряд затвора (Qg) (Макс.) @ VgsVgs (Макс.)Входная емкость (Ciss) (Макс.) @ VdsФункция FETРассеиваемая мощность (макс.)Рабочая ТемператураТип монтажаПакет устройств поставщикаУпаковка / чехол
Sanken MOSFET N-CH 75V 62A TO-263 устарелыйN-ChannelMOSFET (Metal Oxide)75V62A (Tc)4.5V, 10V9.3 mOhm @ 31.2A, 10V2.5V @ 1mA57nC @ 10V±20V4040pF @ 25V
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116W (Tc)150°C (TJ)SMD Поверхностный монтажTO-263TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Sanken MOSFET N-CH 40V 14A 8DFN в производствеN-ChannelMOSFET (Metal Oxide)40V14A (Ta)4.5V, 10V5 mOhm @ 35.4A, 10V2.5V @ 650µA35.3nC @ 10V±20V2410pF @ 25V
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3.1W (Ta), 59W (Tc)150°C (TJ)SMD Поверхностный монтаж8-DFN (5x6)8-PowerTDFN
Sanken MOSFET N-CH 60V 9A 8DFN в производствеN-ChannelMOSFET (Metal Oxide)60V9A (Ta)4.5V, 10V8.9 mOhm @ 23.6A, 10V2.5V @ 650µA38.6nC @ 10V±20V2520pF @ 25V
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3.1W (Ta), 59W (Tc)150°C (TJ)SMD Поверхностный монтаж8-DFN (5x6)8-PowerTDFN
Sanken MOSFET N-CH 50V 75A TO-220F в производствеN-ChannelMOSFET (Metal Oxide)50V75A (Ta)10V10 mOhm @ 37A, 10V4.5V @ 250µA70nC @ 10V±20V3200pF @ 10V
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40W (Tc)150°C (TJ)Through HoleTO-220TO-220-3 Full Pack
Sanken MOSFET N-CH 75V 6A 8DFN в производствеN-ChannelMOSFET (Metal Oxide)75V6A (Ta)4.5V, 10V23.2 mOhm @ 12.4A, 10V2.5V @ 350µA24nC @ 10V±20V1580pF @ 25V
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3.1W (Ta), 46W (Tc)150°C (TJ)SMD Поверхностный монтаж8-DFN (5x6)8-PowerTDFN
Sanken MOSFET N-CH 60V 24A TO-220F в производствеN-ChannelMOSFET (Metal Oxide)60V24A (Tc)4.5V, 10V21.8 mOhm @ 15.8A, 10V2.5V @ 250µA16nC @ 10V±20V1050pF @ 25V
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29W (Tc)150°C (TJ)Through HoleTO-220FTO-220-3 Full Pack
Sanken MOSFET N-CH 40V 80A TO-220 в производствеN-ChannelMOSFET (Metal Oxide)40V80A (Tc)4.5V, 10V3.8 mOhm @ 58.5A, 10V2.5V @ 1mA63.2nC @ 10V±20V3910pF @ 25V
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116W (Tc)150°C (TJ)Through HoleTO-220-3TO-220-3
Sanken MOSFET N-CH 30V 29A TO-252 в производствеN-ChannelMOSFET (Metal Oxide)30V29A (Tc)4.5V, 10V8.4 mOhm @ 25A, 10V2.5V @ 250µA16.3nC @ 10V±20V1030pF @ 15V
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32W (Tc)150°C (TJ)SMD Поверхностный монтажTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
Sanken MOSFET N-CH 40V 29A TO-252 в производствеN-ChannelMOSFET (Metal Oxide)40V29A (Tc)4.5V, 10V11.5 mOhm @ 18.8A, 10V2.5V @ 250µA14.5nC @ 10V±20V990pF @ 25V
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32W (Tc)150°C (TJ)SMD Поверхностный монтажTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
Sanken MOSFET N-CH 60V 25A TO-252 в производствеN-ChannelMOSFET (Metal Oxide)60V25A (Tc)4.5V, 10V21.2 mOhm @ 12.5A, 10V2.5V @ 250µA16nC @ 10V±20V1050pF @ 25V
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32W (Tc)150°C (TJ)SMD Поверхностный монтажTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
Sanken MOSFET N-CH 100V 15A TO-252 в производствеN-ChannelMOSFET (Metal Oxide)100V15A (Tc)4.5V, 10V70.4 mOhm @ 7.5A, 10V2.5V @ 250µA15.8nC @ 10V±20V1050pF @ 25V
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32W (Tc)150°C (TJ)SMD Поверхностный монтажTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
Sanken MOSFET N-CH 30V 26A 8DFN в производствеN-ChannelMOSFET (Metal Oxide)30V12A (Ta)4.5V, 10V8.2 mOhm @ 25A, 10V2.5V @ 250µA16.3nC @ 10V±20V1030pF @ 15V
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3.1W (Ta), 40W (Tc)150°C (TJ)SMD Поверхностный монтаж8-DFN (5x6)8-PowerTDFN
Sanken MOSFET N-CH 40V 9A 8DFN в производствеN-ChannelMOSFET (Metal Oxide)40V9A (Ta)4.5V, 10V11.3 mOhm @ 18.8A, 10V2.5V @ 250µA14.5nC @ 10V±20V990pF @ 25V
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3.1W (Ta), 40W (Tc)150°C (TJ)SMD Поверхностный монтаж8-DFN (5x6)8-PowerTDFN
Sanken MOSFET N-CH 60V 6A 8DFN в производствеN-ChannelMOSFET (Metal Oxide)60V6A (Ta)4.5V, 10V21 mOhm @ 12.5A, 10V2.5V @ 250µA16nC @ 10V±20V1050pF @ 25V
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3.1W (Ta), 40W (Tc)150°C (TJ)SMD Поверхностный монтаж8-DFN (5x6)8-PowerTDFN
Sanken MOSFET N-CH 30V 48A TO-252 в производствеN-ChannelMOSFET (Metal Oxide)30V48A (Tc)4.5V, 10V6.5 mOhm @ 31A, 10V2.5V @ 350µA24.6nC @ 10V±20V1480pF @ 15V
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37W (Tc)150°C (TJ)SMD Поверхностный монтажTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
Sanken MOSFET N-CH 40V 47A TO-252 в производствеN-ChannelMOSFET (Metal Oxide)40V47A (Tc)4.5V, 10V8.9 mOhm @ 23.3A, 10V2.5V @ 350µA18.5nC @ 10V±20V1470pF @ 25V
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37W (Tc)150°C (TJ)SMD Поверхностный монтажTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
Sanken MOSFET N-CH 60V 31A TO-252 в производствеN-ChannelMOSFET (Metal Oxide)60V31A (Tc)4.5V, 10V15 mOhm @ 15.5A, 10V2.5V @ 350µA23.7nC @ 10V±20V1510pF @ 25V
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37W (Tc)150°C (TJ)SMD Поверхностный монтажTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
Sanken MOSFET N-CH 100V 19A TO-252 в производствеN-ChannelMOSFET (Metal Oxide)100V19A (Ta)4.5V, 10V47.7 mOhm @ 9.3A, 10V2.5V @ 350µA23nC @ 10V±20V1530pF @ 25V
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37W (Tc)150°C (TJ)SMD Поверхностный монтажTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
Sanken MOSFET N-CH 30V 26A 8DFN в производствеN-ChannelMOSFET (Metal Oxide)30V14A (Ta)4.5V, 10V6.2 mOhm @ 31A, 10V2.5V @ 350µA24.6nC @ 10V±20V1480pF @ 15V
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3.1W (Ta), 46W (Tc)150°C (TJ)SMD Поверхностный монтаж8-DFN (5x6)8-PowerTDFN
Sanken MOSFET N-CH 40V 11A 8DFN в производствеN-ChannelMOSFET (Metal Oxide)40V11A (Ta)4.5V, 10V8.3 mOhm @ 23.3A, 10V2.5V @ 350µA24.9nC @ 10V±20V1470pF @ 25V
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3.1W (Ta), 46W (Tc)150°C (TJ)SMD Поверхностный монтаж8-DFN (5x6)8-PowerTDFN
Sanken MOSFET N-CH 60V 7A 8DFN в производствеN-ChannelMOSFET (Metal Oxide)60V7A (Ta)4.5V, 10V15 mOhm @ 15.5A, 10V2.5V @ 350µA23.7nC @ 10V±20V1510pF @ 25V
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3.1W (Ta), 46W (Tc)150°C (TJ)SMD Поверхностный монтаж8-DFN (5x6)8-PowerTDFN
Sanken MOSFET N-CH 100V 4A 8DFN в производствеN-ChannelMOSFET (Metal Oxide)100V4A (Ta)4.5V, 10V47.7 mOhm @ 9.3A, 10V2.5V @ 350µA23nC @ 10V±20V1530pF @ 25V
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3.1W (Ta), 46W (Tc)150°C (TJ)SMD Поверхностный монтаж8-DFN (5x6)8-PowerTDFN
Sanken MOSFET N-CH 30V 48A TO-252 в производствеN-ChannelMOSFET (Metal Oxide)30V48A (Tc)4.5V, 10V4 mOhm @ 47.2A, 10V2.5V @ 650µA38.8nC @ 10V±20V2460pF @ 15V
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47W (Tc)150°C (TJ)SMD Поверхностный монтажTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
Sanken MOSFET N-CH 40V 48A TO-252 в производствеN-ChannelMOSFET (Metal Oxide)40V48A (Tc)4.5V, 10V5.2 mOhm @ 35.4A, 10V2.5V @ 650µA35.3nC @ 10V±20V2410pF @ 25V
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47W (Tc)150°C (TJ)SMD Поверхностный монтажTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
Sanken MOSFET N-CH 100V 28A TO-252 в производствеN-ChannelMOSFET (Metal Oxide)100V28A (Tc)4.5V, 10V30 mOhm @ 14.2A, 10V2.5V @ 650µA35.8nC @ 10V±20V2540pF @ 25V
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47W (Tc)150°C (TJ)SMD Поверхностный монтажTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
Sanken MOSFET N-CH 60V 47A TO-252 в производствеN-ChannelMOSFET (Metal Oxide)60V47A (Tc)4.5V, 10V9.1 mOhm @ 23.6A, 10V2.5V @ 650µA38.6nC @ 10V±20V2520pF @ 25V
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47W (Tc)150°C (TJ)SMD Поверхностный монтажTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
Sanken MOSFET N-CH 30V 18A 8DFN в производствеN-ChannelMOSFET (Metal Oxide)30V18A (Ta)4.5V, 10V3.8 mOhm @ 47.2A, 10V2.5V @ 650µA38.8nC @ 10V±20V2460pF @ 15V
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3.1W (Ta), 59W (Tc)150°C (TJ)SMD Поверхностный монтаж8-DFN (5x6)8-PowerTDFN
Sanken MOSFET N-CH 75V 26A 8DFN в производствеN-ChannelMOSFET (Metal Oxide)75V7A (Ta), 26A (Tc)4.5V, 10V14.5 mOhm @ 18.9A, 10V2.5V @ 650µA33nC @ 10V±20V2520pF @ 25V
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3.1W (Ta), 59W (Tc)150°C (TJ)SMD Поверхностный монтаж8-DFN (5x6)8-PowerTDFN
Sanken MOSFET N-CH 100V 5A 8DFN в производствеN-ChannelMOSFET (Metal Oxide)100V5A (Ta)4.5V, 10V28 mOhm @ 14.2A, 10V2.5V @ 650µA35.8nC @ 10V±20V2540pF @ 25V
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3.1W (Ta), 59W (Tc)150°C (TJ)SMD Поверхностный монтаж8-DFN (5x6)8-PowerTDFN
Sanken MOSFET N-CH 60V 30A TO-220F в производствеN-ChannelMOSFET (Metal Oxide)60V30A (Tc)4.5V, 10V15.3 mOhm @ 19.8A, 10V2.5V @ 350µA23.7nC @ 10V±20V1510pF @ 25V
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32W (Tc)150°C (TJ)Through HoleTO-220FTO-220-3 Full Pack
Sanken MOSFET N-CH 100V 18A TO-220F в производствеN-ChannelMOSFET (Metal Oxide)100V18A (Tc)4.5V, 10V48 mOhm @ 11.9A, 10V2.5V @ 350µA23nC @ 10V±20V1530pF @ 25V
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32W (Tc)150°C (TJ)Through HoleTO-220FTO-220-3 Full Pack
Sanken MOSFET N-CH 30V 40A TO-263 в производствеN-ChannelMOSFET (Metal Oxide)30V40A (Tc)4.5V, 10V9 mOhm @ 31.5A, 10V2.5V @ 250µA16.3nC @ 10V±20V1030pF @ 15V
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52W (Tc)150°C (TJ)SMD Поверхностный монтажTO-263TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Sanken MOSFET N-CH 40V 80A TO-220 в производствеN-ChannelMOSFET (Metal Oxide)40V80A (Tc)4.5V, 10V5.2 mOhm @ 42.8A, 10V2.5V @ 650µA35.3nC @ 10V±20V2410pF @ 25V
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90W (Tc)150°C (TJ)Through HoleTO-220-3TO-220-3
Sanken MOSFET N-CH 30V 40A TO-263 в производствеN-ChannelMOSFET (Metal Oxide)30V40A (Tc)4.5V, 10V6.5 mOhm @ 39.5A, 10V2.5V @ 350µA24.6nC @ 10V±20V1480pF @ 15V
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64W (Tc)150°C (TJ)SMD Поверхностный монтажTO-263TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Sanken MOSFET N-CH 75V 46A TO-220 в производствеN-ChannelMOSFET (Metal Oxide)75V46A (Tc)4.5V, 10V13.6 mOhm @ 22.8A, 10V2.5V @ 650µA36.2nC @ 10V±20V2520pF @ 25V
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90W (Tc)150°C (TJ)Through HoleTO-220-3TO-220-3
Sanken MOSFET N-CH 100V 34A TO-220 в производствеN-ChannelMOSFET (Metal Oxide)100V34A (Tc)4.5V, 10V28.8 mOhm @ 17.1A, 10V2.5V @ 650µA36.5nC @ 10V±20V2540pF @ 25V
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90W (Tc)150°C (TJ)Through HoleTO-220TO-220-3
Sanken MOSFET N-CH 40V 48A TO-252 в производствеN-ChannelMOSFET (Metal Oxide)40V48A (Tc)4.5V, 10V4 mOhm @ 51A, 10V2.5V @ 1mA63.2nC @ 10V±20V3910pF @ 25V
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61W (Tc)150°C (TJ)SMD Поверхностный монтажTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
Sanken MOSFET N-CH 60V 48A TO-252 в производствеN-ChannelMOSFET (Metal Oxide)60V48A (Tc)4.5V, 10V6.5 mOhm @ 34A, 10V2.5V @ 1mA53.6nC @ 10V±20V3810pF @ 25V
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61W (Tc)150°C (TJ)SMD Поверхностный монтажTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
Sanken MOSFET N-CH 60V 39A TO-220F в производствеN-ChannelMOSFET (Metal Oxide)60V39A (Tc)4.5V, 10V8.8 mOhm @ 28.5A, 10V2.5V @ 650µA38.6nC @ 10V±20V2520pF @ 25V
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38W (Tc)150°C (TJ)Through HoleTO-220FTO-220-3 Full Pack
Sanken MOSFET N-CH 100V 23A TO-220F в производствеN-ChannelMOSFET (Metal Oxide)100V23A (Tc)4.5V, 10V27.9 mOhm @ 17.1A, 10V2.5V @ 650µA35.8nC @ 10V±20V2540pF @ 25V
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38W (Tc)150°C (TJ)Through HoleTO-220FTO-220-3 Full Pack
Sanken MOSFET N-CH 60V 57A TO-220 в производствеN-ChannelMOSFET (Metal Oxide)60V57A (Tc)4.5V, 10V9.2 mOhm @ 28.5A, 10V2.5V @ 650µA38.6nC @ 10V±20V2520pF @ 25V
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90W (Tc)150°C (TJ)Through HoleTO-220-3TO-220-3
Sanken MOSFET N-CH 30V 22A 8DFN в производствеN-ChannelMOSFET (Metal Oxide)30V22A (Ta)4.5V, 10V2.6 mOhm @ 68A, 10V2.5V @ 1mA64nC @ 10V±20V4010pF @ 15V
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3.1W (Ta), 77W (Tc)150°C (TJ)SMD Поверхностный монтаж8-DFN (5x6)8-PowerTDFN
Sanken MOSFET N-CH 40V 17A 8DFN в производствеN-ChannelMOSFET (Metal Oxide)40V17A (Ta)4.5V, 10V3.5 mOhm @ 51A, 10V2.5V @ 1mA63.2nC @ 10V±20V3910pF @ 25V
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3.1W (Ta), 77W (Tc)150°C (TJ)SMD Поверхностный монтаж8-DFN (5x6)8-PowerTDFN
Sanken MOSFET N-CH 60V 11A 8DFN в производствеN-ChannelMOSFET (Metal Oxide)60V11A (Ta)4.5V, 10V6 mOhm @ 34A, 10V2.5V @ 1mA53.6nC @ 10V±20V3810pF @ 25V
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3.1W (Ta), 77W (Tc)150°C (TJ)SMD Поверхностный монтаж8-DFN (5x6)8-PowerTDFN
Sanken MOSFET N-CH 75V 9A 8DFN в производствеN-ChannelMOSFET (Metal Oxide)75V9A (Ta)4.5V, 10V9.1 mOhm @ 27.2A, 10V2.5V @ 1mA57nC @ 10V±20V4040pF @ 25V
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3.1W (Ta), 77W (Tc)150°C (TJ)SMD Поверхностный монтаж8-DFN (5x6)8-PowerTDFN
Sanken MOSFET N-CH 100V 7A 8DFN в производствеN-ChannelMOSFET (Metal Oxide)100V7A (Ta)4.5V, 10V17.6 mOhm @ 20.4A, 10V2.5V @ 1mA55.8nC @ 10V±20V3990pF @ 25V
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3.1W (Ta), 77W (Tc)150°C (TJ)SMD Поверхностный монтаж8-DFN (5x6)8-PowerTDFN
Sanken MOSFET N-CH 30V 80A TO-263 в производствеN-ChannelMOSFET (Metal Oxide)30V80A (Tc)4.5V, 10V3.7 mOhm @ 57A, 10V2.5V @ 650µA38.8nC @ 10V±20V2460pF @ 15V
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90W (Tc)150°C (TJ)SMD Поверхностный монтажTO-263TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Sanken MOSFET N-CH 40V 80A TO-263 в производствеN-ChannelMOSFET (Metal Oxide)40V80A (Tc)4.5V, 10V5 mOhm @ 42.8A, 10V2.5V @ 650µA35.3nC @ 10V±20V2410pF @ 25V
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90W (Tc)150°C (TJ)SMD Поверхностный монтажTO-263TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Sanken MOSFET N-CH 60V 57A TO-263 в производствеN-ChannelMOSFET (Metal Oxide)60V57A (Tc)4.5V, 10V8.8 mOhm @ 28.5A, 10V2.5V @ 650µA38.6nC @ 10V±20V2520pF @ 25V
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90W (Tc)150°C (TJ)SMD Поверхностный монтажTO-263TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Sanken MOSFET N-CH 75V 46A TO-263 в производствеN-ChannelMOSFET (Metal Oxide)75V46A (Tc)4.5V, 10V13.6 mOhm @ 22.8A, 10V2.5V @ 650µA36.2nC @ 10V±20V2520pF @ 25V
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90W (Tc)150°C (TJ)SMD Поверхностный монтажTO-263TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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