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Texas Instruments |
MOSFET N-CH 30V 100A 8VSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Ta) | 4.5V, 10V | 1 mOhm @ 35A, 10V | 1.8V @ 250µA | 64nC @ 4.5V | ±20V | 9000pF @ 15V | - | 3.2W (Ta), 195W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 30V 100A 8SON |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 24A (Ta), 100A (Tc) | 4.5V, 10V | 3.5 mOhm @ 20A, 10V | 1.8V @ 250µA | 13nC @ 4.5V | ±20V | 1980pF @ 15V | - | 3.2W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 25V 113A 8SON |
устарелый | N-Channel | MOSFET (Metal Oxide) | 25V | 22A (Ta), 113A (Tc) | 4.5V, 10V | 4.5 mOhm @ 25A, 10V | 2.1V @ 250µA | 8.9nC @ 4.5V | +16V, -12V | 1300pF @ 12.5V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 25V 5X6 100A 8SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 25V | 33A (Ta), 100A (Tc) | 3V, 8V | 2 mOhm @ 30A, 8V | 1.4V @ 250µA | 25nC @ 4.5V | +10V, -8V | 4000pF @ 12.5V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 25V 100A 8-SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 25V | 34A (Ta), 100A (Tc) | 4.5V, 10V | 1.9 mOhm @ 30A, 10V | 2V @ 250µA | 21nC @ 4.5V | +16V, -12V | 3650pF @ 12.5V | - | 3.2W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 25V 100A 8SON |
устарелый | N-Channel | MOSFET (Metal Oxide) | 25V | 31A (Ta), 100A (Tc) | 4.5V, 10V | 2.4 mOhm @ 25A, 10V | 1.9V @ 250µA | 18nC @ 4.5V | +16V, -12V | 2660pF @ 12.5V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 30V 8-VSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 34A (Ta), 100A (Tc) | 4.5V, 10V | 1.4 mOhm @ 40A, 10V | 1.65V @ 250µA | 39nC @ 4.5V | ±20V | 7020pF @ 15V | - | 3.1W (Ta), 191W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 100V 200A DDPAK-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 200A (Ta) | 6V, 10V | 5.6 mOhm @ 90A, 10V | 3.2V @ 250µA | 57nC @ 10V | ±20V | 5060pF @ 50V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | DDPAK/TO-263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Texas Instruments |
MOSFET N-CH 60V 23A 8VSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Ta) | 4.5V, 10V | 3.2 mOhm @ 25A, 10V | 2.2V @ 250µA | 58nC @ 10V | ±20V | 5070pF @ 30V | - | 3.2W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 30V 100A 8SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Ta), 100A (Tc) | 4.5V, 10V | 1.15 mOhm @ 40A, 10V | 1.7V @ 250µA | 51nC @ 4.5V | ±20V | 9200pF @ 15V | - | 3.2W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 100V 100A VSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Ta) | 6V, 10V | 4.9 mOhm @ 17A, 10V | 3.2V @ 250µA | 62nC @ 10V | ±20V | 4810pF @ 50V | - | 3.1W (Ta), 195W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 60V 200A TO-263 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 200A (Ta), 279A (Tc) | 4.5V, 10V | 2 mOhm @ 100A, 10V | 2.4V @ 250µA | 81nC @ 10V | ±20V | 6620pF @ 30V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | DDPAK/TO-263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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Texas Instruments |
MOSFET N-CH 12V 2.1A 3PICOSTAR |
в производстве | N-Channel | MOSFET (Metal Oxide) | 12V | 2.1A (Ta) | 1.8V, 4.5V | 180 mOhm @ 500mA, 4.5V | 1.1V @ 250µA | 1.4nC @ 4.5V | 8V | 200pF @ 6V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
MOSFET N-CH 30V 1.5A 3PICOSTAR |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 3A (Ta) | 1.8V, 8V | 121 mOhm @ 500mA, 8V | 1.1V @ 250µA | 0.2nC @ 8V | 12V | 195pF @ 15V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
MOSFET N-CH 30V 15A 8SON |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta), 60A (Tc) | 4.5V, 10V | 6 mOhm @ 11A, 10V | 1.9V @ 250µA | 12nC @ 4.5V | ±20V | 2050pF @ 15V | - | 2.6W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SON (3.3x3.3) | 8-PowerVDFN |
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Texas Instruments |
MOSFET N-CH 25V 3.3X3.3 8-SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 25V | 21A (Ta), 60A (Tc) | 3V, 8V | 4.5 mOhm @ 24A, 8V | 1.4V @ 250µA | 8.4nC @ 4.5V | +10V, -8V | 1300pF @ 12.5V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON-CLIP (3.3x3.3) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 25V 60A 8-SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 25V | 19A (Ta), 60A (Tc) | 4.5V, 10V | 5.3 mOhm @ 20A, 10V | 2.2V @ 250µA | 8.1nC @ 4.5V | +16V, -12V | 1100pF @ 12.5V | - | 2.7W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON-CLIP (3.3x3.3) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 100V 50A 8VSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 50A (Ta) | 6V, 10V | 14.5 mOhm @ 10A, 10V | 3.6V @ 250µA | 21nC @ 10V | ±20V | 1680pF @ 50V | - | 2.8W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON (3.3x3.3) | 8-PowerVDFN |
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Texas Instruments |
MOSFET N-CH 100V 50A 8VSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 50A (Ta) | 6V, 10V | 14.5 mOhm @ 10A, 10V | 3.6V @ 250µA | 21nC @ 10V | ±20V | 1680pF @ 50V | - | 2.8W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON (3.3x3.3) | 8-PowerVDFN |
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Texas Instruments |
MOSFET N-CH 60V 23A 8VSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Ta) | 4.5V, 10V | 3.2 mOhm @ 25A, 10V | 2.2V @ 250µA | 58nC @ 10V | ±20V | 5070pF @ 30V | - | 3.2W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 80V 100A 8SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Ta) | 6V, 10V | 4.1 mOhm @ 19A, 10V | 3.3V @ 250µA | 62nC @ 10V | ±20V | 4870pF @ 40V | - | 3.1W (Ta), 195W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 30V 3A 3-PICOSTAR |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 3A (Ta) | 1.8V, 8V | 121 mOhm @ 500mA, 8V | 1.1V @ 250µA | 1.2nC @ 4.5V | 12V | 195pF @ 15V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
MOSFET N-CH 12V 2.1A 3PICOSTAR |
в производстве | N-Channel | MOSFET (Metal Oxide) | 12V | 2.1A (Ta) | 1.8V, 4.5V | 180 mOhm @ 500mA, 4.5V | 1.1V @ 250µA | 1.4nC @ 4.5V | 8V | 200pF @ 6V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
MOSFET P-CH 8V 10A 9DSBGA |
в производстве | P-Channel | MOSFET (Metal Oxide) | 8V | 10A (Ta) | 2.5V, 4.5V | 12.2 mOhm @ 2A, 4.5V | 1.1V @ 250µA | 8.4nC @ 4.5V | -6V | 1390pF @ 4V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 9-DSBGA | 9-UFBGA, DSBGA |
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Texas Instruments |
MOSFET N-CH 100V 15A VSONP |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 15A (Ta) | 6V, 10V | 59 mOhm @ 5A, 10V | 3.8V @ 250µA | 4.3nC @ 10V | ±20V | 454pF @ 50V | - | 2.8W (Ta), 23W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (3x3.15) | 8-PowerVDFN |
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Texas Instruments |
MOSFET N-CH 30V 5A 6SON |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 5A (Tc) | 3V, 8V | 30 mOhm @ 4A, 8V | 1.8V @ 250µA | 2.7nC @ 4.5V | +10V, -8V | 340pF @ 15V | - | 2.3W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 6-WSON (2x2) | 6-WDFN Exposed Pad |
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Texas Instruments |
60V N CH MOSFET |
в производстве | - | - | - | - | 4.5V, 10V | - | - | - | ±20V | - | - | - | - | SMD Поверхностный монтаж | 8-VSON (3.3x3.3) | 8-PowerVDFN |
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Texas Instruments |
MOSFET N-CH 100V 15A VSONP |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 15A (Ta) | 6V, 10V | 59 mOhm @ 5A, 10V | 3.8V @ 250µA | 4.3nC @ 10V | ±20V | 454pF @ 50V | - | 2.8W (Ta), 23W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (3x3.15) | 8-PowerVDFN |
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Texas Instruments |
MOSFET NCH 100V 13.1A 6WSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 13.1A (Tc) | 6V, 10V | 59 mOhm @ 5A, 10V | 3.8V @ 250µA | 5.6nC @ 10V | ±20V | 454pF @ 50V | - | 2.5W (Ta), 20.2W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 6-WSON (2x2) | 6-WDFN Exposed Pad |
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Texas Instruments |
40V N-CHANNEL NEXFET POWER MOSF |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 159A (Tc) | 4.5V, 10V | 3.5 mOhm @ 24A, 4.5V | 2.45V @ 250µA | 63nC @ 10V | ±20V | 5850pF @ 10V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 40V 300A 8VSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 300A (Tc) | 4.5V, 10V | 0.96 mOhm @ 32A, 10V | 2.3V @ 250µA | 153nC @ 10V | ±20V | 11400pF @ 20V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 60V 100A 8SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Ta) | 4.5V, 10V | 4.6 mOhm @ 22A, 10V | 2.3V @ 250µA | 43nC @ 10V | ±20V | 3840pF @ 30V | - | 3.1W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 80V 100A SON5X6 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Ta) | 6V, 10V | 4.1 mOhm @ 19A, 10V | 3.3V @ 250µA | 62nC @ 10V | ±20V | 4870pF @ 40V | - | 3.1W (Ta), 195W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 100V 200A TO263 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 200A (Ta) | 6V, 10V | 3.4 mOhm @ 100A, 10V | 3.4V @ 250µA | 98nC @ 10V | ±20V | 7930pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | DDPAK/TO-263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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Texas Instruments |
MOSFET N-CH 30V 60A 8VSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Ta) | 4.5V, 10V | 2.3 mOhm @ 25A, 10V | 1.8V @ 250µA | 30nC @ 4.5V | ±20V | 4420pF @ 15V | - | 2.8W (Ta), 108W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 25V 100A 8-SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 25V | 31A (Ta), 100A (Tc) | 4.5V, 10V | 2.4 mOhm @ 25A, 10V | 1.9V @ 250µA | 18nC @ 4.5V | +16V, -12V | 2660pF @ 12.5V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 100V 100A VSONP |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Ta) | 6V, 10V | 9.4 mOhm @ 13A, 10V | 3.4V @ 250µA | 35nC @ 10V | ±20V | 2670pF @ 50V | - | 3.2W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET P-CH 20V 1.7A PICOSTAR |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 1.7A (Ta) | 1.8V, 8V | 132 mOhm @ 400mA, 8V | 1.2V @ 250µA | 0.91nC @ 4.5V | -12V | 155pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
MOSFET N-CH 30V 25A 8VSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Ta) | 4.5V, 10V | 9.7 mOhm @ 8A, 10V | 2V @ 250µA | 15.1nC @ 10V | ±20V | 1030pF @ 15V | - | 3.1W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET NCH 100V 14.4A SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 14.4A (Ta) | 6V, 10V | 59 mOhm @ 5A, 10V | 3.8V @ 250µA | 5.6nC @ 10V | ±20V | 454pF @ 50V | - | 2.5W (Ta), 20.2W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 6-WSON (2x2) | 6-WDFN Exposed Pad |
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Texas Instruments |
40V N CH MOSFET |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 89A (Tc) | 4.5V, 10V | 7.9 mOhm @ 15A, 10V | 2.4V @ 250µA | 40nC @ 20V | ±20V | - | - | 74W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
40V N CH MOSFET |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 159A (Tc) | 4.5V, 10V | 3.5 mOhm @ 24A, 4.5V | 2.45V @ 250µA | 63nC @ 10V | ±20V | 5850pF @ 10V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
40V N-CHANNEL NEXFET POWER MOSF |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 89A (Tc) | 4.5V, 10V | 7.9 mOhm @ 15A, 10V | 2.4V @ 250µA | 40nC @ 10V | ±20V | 2683pF @ 20V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CHANNEL 25V 60A 8VSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 25V | 60A (Tc) | 2.5V, 8V | 4.5 mOhm @ 20A, 8V | 1.1V @ 250µA | 9.2nC @ 4.5V | +10V, -8V | 1350pF @ 12.5V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON-CLIP (3.3x3.3) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 25V 100A 8VSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 25V | 100A (Ta) | 4.5V, 10V | 0.59 mOhm @ 50A, 10V | 1.9V @ 250µA | 250nC @ 10V | ±20V | 14000pF @ 12V | - | 3.2W (Ta), 195W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 30V 100A 8VSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Ta) | 4.5V, 10V | 0.69 mOhm @ 50A, 10V | 1.9V @ 250µA | 121nC @ 4.5V | ±20V | 13600pF @ 15V | - | 3.2W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 80V 200A DDPAK-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 80V | 200A (Ta) | 6V, 10V | 2.3 mOhm @ 100A, 10V | 3.2V @ 250µA | 156nC @ 10V | ±20V | 12200pF @ 40V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | DDPAK/TO-263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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Texas Instruments |
20V P CH MOSFET |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 3.6A (Ta) | 1.8V, 4.5V | 76 mOhm @ 400mA, 4.5V | 1.05V @ 250µA | 1.33nC @ 4.5V | -20V | 385pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-LGA (0.73x0.64) | 3-XFLGA |
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Texas Instruments |
MOSFET N-CH 12V 1.6A 4-DSBGA |
в производстве | N-Channel | MOSFET (Metal Oxide) | 12V | 1.6A (Ta) | 2.5V, 4.5V | 17.1 mOhm @ 1A, 4.5V | 1.3V @ 250µA | 7.8nC @ 4.5V | ±10V | 862pF @ 6V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-DSBGA (1x1) | 4-UFBGA, DSBGA |
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Texas Instruments |
MOSFET P-CH 8V 5A |
в производстве | P-Channel | MOSFET (Metal Oxide) | 8V | 5A (Ta) | 2.5V, 4.5V | 9.9 mOhm @ 2A, 4.5V | 950mV @ 250µA | 24.6nC @ 4.5V | -6V | 1130pF @ 4V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 9-DSBGA | 9-UFBGA, DSBGA |