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Texas Instruments |
MOSFET N-CH 30V 1.5A 3PICOSTAR |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 1.5A (Ta) | 1.8V, 4.5V | 240 mOhm @ 500mA, 8V | 1.1V @ 250µA | 1.3nC @ 4.5V | 12V | 190pF @ 15V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
MOSFET P-CH 12V 3PICOSTAR |
в производстве | P-Channel | MOSFET (Metal Oxide) | 12V | 2.3A (Ta) | 1.8V, 4.5V | 175 mOhm @ 500mA, 4.5V | 1.2V @ 250µA | 1.14nC @ 4.5V | -8V | 236pF @ 6V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
MOSFET N-CH 30V 3.1A 0402 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 3.1A (Ta) | 1.8V, 4.5V | 109 mOhm @ 500mA, 8A | 1.1V @ 250µA | 1.35nC @ 4.5V | 12V | 195pF @ 15V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
MOSFET N-CH 12V 1.6A 4DSBGA |
в производстве | N-Channel | MOSFET (Metal Oxide) | 12V | 1.6A (Ta) | 1.8V, 4.5V | 34 mOhm @ 1A, 4.5V | 1.1V @ 250µA | 2.9nC @ 4.5V | ±8V | 462pF @ 6V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-DSBGA (1x1) | 4-UFBGA, DSBGA |
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Texas Instruments |
MOSFET N-CH 25V 6-SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 25V | 5A (Tc) | 3V, 8V | 24 mOhm @ 4A, 8V | 1.55V @ 250µA | 2.8nC @ 4.5V | +10V, -8V | 340pF @ 12.5V | - | 2.3W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 6-SON | 6-SMD, Flat Leads |
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Texas Instruments |
MOSFET N-CH 12V 76A 6SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 12V | 22A (Ta) | 2.5V, 4.5V | 9.3 mOhm @ 5A, 4.5V | 1.1V @ 250µA | 6.6nC @ 4.5V | ±8V | 997pF @ 6V | - | 2.7W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 6-WSON (2x2) | 6-VDFN Exposed Pad |
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Texas Instruments |
MOSFET P-CH 20V 48A 6SON |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 20A (Ta) | 1.8V, 4.5V | 23.9 mOhm @ 5A, 4.5V | 1.1V @ 250µA | 4.7nC @ 4.5V | ±8V | 655pF @ 10V | - | 2.9W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 6-WSON (2x2) | 6-WDFN Exposed Pad |
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Texas Instruments |
MOSFET N-CH 30V 5A 6SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 5A (Tc) | 3V, 8V | 30 mOhm @ 4A, 8V | 1.8V @ 250µA | 2.7nC @ 4.5V | +10V, -8V | 340pF @ 15V | - | 2.3W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 6-WSON (2x2) | 6-WDFN Exposed Pad |
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Texas Instruments |
MOSFET N-CH 30V 35A 8VSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Ta) | 4.5V, 10V | 4.8 mOhm @ 16A, 10V | 1.8V @ 250µA | 35nC @ 10V | ±20V | 2310pF @ 15V | - | 2.8W (Ta), 53W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (3x3.15) | 8-PowerVDFN |
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Texas Instruments |
MOSFET N-CH 30V 73A 8SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta), 73A (Tc) | 3V, 8V | 10.5 mOhm @ 11A, 8V | 1.8V @ 250µA | 5.2nC @ 4.5V | +10V, -8V | 700pF @ 15V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 30V 47A 8SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta), 44A (Tc) | 3V, 8V | 10.3 mOhm @ 10A, 8V | 1.8V @ 250µA | 5.1nC @ 4.5V | +10V, -8V | 700pF @ 15V | - | 2.7W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON-CLIP (3.3x3.3) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 30V 12A 8VSON |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 9 mOhm @ 11A, 10V | 2.1V @ 250µA | 7.8nC @ 4.5V | ±20V | 1370pF @ 15V | - | 2.6W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SON (3.3x3.3) | 8-PowerVDFN |
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Texas Instruments |
MOSFET N-CH 60V 50A 8SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 11A (Ta), 50A (Tc) | 6V, 10V | 13 mOhm @ 12A, 10V | 3.5V @ 250µA | 18nC @ 10V | ±20V | 1480pF @ 30V | - | 3.2W (Ta), 75W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET P-CH 20V 76A 8SON |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 76A (Tc) | 1.8V, 4.5V | 8.9 mOhm @ 10A, 4.5V | 1.15V @ 250µA | 9.7nC @ 4.5V | ±12V | 1790pF @ 10V | - | 2.8W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON (3.3x3.3) | 8-PowerVDFN |
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Texas Instruments |
MOSFET N-CH 60V 8SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 13A (Ta), 50A (Tc) | 4.5V, 10V | 9.8 mOhm @ 14A, 10V | 2.3V @ 250µA | 22nC @ 10V | ±20V | 1770pF @ 30V | - | 3.1W (Ta), 77W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 40V 8SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 15A (Ta), 50A (Tc) | 4.5V, 10V | 6.6 mOhm @ 17A, 10V | 2.4V @ 250µA | 19nC @ 10V | ±20V | 1656pF @ 20V | - | 3.1W (Ta), 77W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 30V 8SON |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 48A (Tc) | 4.5V, 10V | 8.8 mOhm @ 11A, 10V | 2.2V @ 250µA | 7.2nC @ 4.5V | ±20V | 1272pF @ 15V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 25V 81A 8-SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 25V | 21A (Ta), 81A (Tc) | 4.5V, 10V | 5.1 mOhm @ 20A, 10V | 2.1V @ 250µA | 8.5nC @ 4.5V | +16V, -12V | 1220pF @ 12.5V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 30V 60A 8VSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Ta) | 4.5V, 10V | 2.3 mOhm @ 25A, 10V | 1.8V @ 250µA | 30nC @ 4.5V | ±20V | 4420pF @ 15V | - | 2.8W (Ta), 108W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 25V 60A 8SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 25V | 60A (Tc) | 3V, 8V | 4 mOhm @ 24A, 8V | 1.4V @ 250µA | 8.4nC @ 4.5V | +10V, -8V | 1300pF @ 12.5V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON-CLIP (3.3x3.3) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 25V 60A 8SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 25V | 21A (Ta), 60A (Tc) | 2.5V, 8V | 4.5 mOhm @ 20A, 8V | 1.1V @ 250µA | 9.2nC @ 4.5V | +10V, -8V | 1350pF @ 12.5V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON-CLIP (3.3x3.3) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 30V 65A 8SON |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 65A (Tc) | 4.5V, 10V | 10.8 mOhm @ 11A, 10V | 2V @ 250µA | 3.4nC @ 4.5V | ±20V | 506pF @ 15V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 25V 5X6 8SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 25V | 21A (Ta), 97A (Tc) | 3V, 8V | 5 mOhm @ 20A, 8V | 1.4V @ 250µA | 9.7nC @ 4.5V | +10V, -8V | 1365pF @ 12.5V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Texas Instruments |
60V N-CHANNEL NEXFET POWER MOSF |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 12A (Ta), 60A (Tc) | 4.5V, 10V | 15.6 mOhm @ 12A, 4.5V | 2.7V @ 250µA | 14.5nC @ 10V | ±20V | 1150pF @ 30V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON (3.3x3.3) | 8-PowerVDFN |
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Texas Instruments |
MOSFET N-CH 40V 8SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 19A (Ta), 100A (Tc) | 4.5V, 10V | 4.3 mOhm @ 22A, 10V | 2.3V @ 250µA | 32nC @ 10V | ±20V | 2640pF @ 20V | - | 3.1W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 60V 17A 8SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Ta), 100A (Tc) | 4.5V, 10V | 5.9 mOhm @ 18A, 10V | 2.3V @ 250µA | 36nC @ 10V | ±20V | 2750pF @ 30V | - | 3.2W (Ta), 116W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 30V 100A 8SON |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 4 mOhm @ 20A, 10V | 1.8V @ 250µA | 11nC @ 4.5V | ±20V | 1650pF @ 15V | - | 3.2W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 60V 100A 8SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Ta) | 4.5V, 10V | 6.8 mOhm @ 18A, 10V | 2.4V @ 250µA | 20nC @ 10V | ±20V | 1500pF @ 30V | - | 3.2W (Ta), 116W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 40V 8SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 22A (Ta), 100A (Tc) | 4.5V, 10V | 3.2 mOhm @ 25A, 10V | 2.3V @ 250µA | 50nC @ 10V | ±20V | 3840pF @ 20V | - | 3.1W (Ta), 150W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 60V 8SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 19A (Ta), 100A (Tc) | 4.5V, 10V | 4.6 mOhm @ 22A, 10V | 2.3V @ 250µA | 43nC @ 10V | ±20V | 3840pF @ 30V | - | 3.1W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 100V 100A 8SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 6V, 10V | 6.4 mOhm @ 16A, 10V | 3.3V @ 250µA | 48nC @ 10V | ±20V | 3870pF @ 50V | - | 3.3W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 25V 100A 8-SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 25V | 31A (Ta), 100A (Tc) | 3V, 8V | 2.4 mOhm @ 25A, 8V | 1.4V @ 250µA | 19nC @ 4.5V | +10V, -8V | 3100pF @ 12.5V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET P-CH 20V 104A 8VSON |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 104A (Tc) | 1.8V, 4.5V | 6.5 mOhm @ 10A, 4.5V | 1.15V @ 250µA | 14.1nC @ 4.5V | ±12V | 2120pF @ 10V | - | 2.8W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON (3.3x3.3) | 8-PowerVDFN |
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Texas Instruments |
MOSFET N-CH 30V 100A 8SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 32A (Ta), 100A (Tc) | 3V, 8V | 2 mOhm @ 30A, 8V | 1.6V @ 250µA | 31nC @ 4.5V | +10V, -8V | 4280pF @ 15V | - | 3.2W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 40V 100A 8VSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Ta) | 4.5V, 10V | 1.2 mOhm @ 32A, 10V | 2.2V @ 250µA | 195nC @ 10V | ±20V | 13900pF @ 20V | - | 3.1W (Ta), 195W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 30V 100A 8VSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Ta) | 4.5V, 10V | 0.69 mOhm @ 50A, 10V | 1.9V @ 250µA | 121nC @ 4.5V | ±20V | 13600pF @ 15V | - | 3.2W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 40V 100A 8VSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 26A (Ta), 100A (Tc) | 4.5V, 10V | 2.3 mOhm @ 30A, 10V | 2.2V @ 250µA | 68nC @ 10V | ±20V | 5070pF @ 20V | - | 3.2W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 25V 100A 8VSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 25V | 100A (Tc) | 4.5V, 10V | 1.07 mOhm @ 30A, 10V | 1.7V @ 250µA | 47nC @ 4.5V | ±20V | 6180pF @ 15V | - | 3.2W (Ta), 191W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 60V 100A 8VSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Ta) | 4.5V, 10V | 2.2 mOhm @ 28A, 10V | 2.3V @ 250µA | 53nC @ 10V | ±20V | 4230pF @ 30V | - | 3.1W (Ta), 195W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 100V 100A 8SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Ta) | 6V, 10V | 4.9 mOhm @ 17A, 10V | 3.2V @ 250µA | 62nC @ 10V | ±20V | 4810pF @ 50V | - | 3.1W (Ta), 195W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 100V 100A 8SON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Ta) | 6V, 10V | 6.4 mOhm @ 16A, 10V | 3.3V @ 250µA | 48nC @ 10V | ±20V | 3870pF @ 50V | - | 3.3W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 40V 100A 8VSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Ta) | 4.5V, 10V | 1.2 mOhm @ 32A, 10V | 2.2V @ 250µA | 195nC @ 10V | ±20V | 13900pF @ 20V | - | 3.1W (Ta), 195W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 25V 100A 8VSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 25V | 100A (Ta) | 4.5V, 10V | 0.59 mOhm @ 50A, 10V | 1.9V @ 250µA | 250nC @ 10V | ±20V | 14000pF @ 12V | - | 3.2W (Ta), 195W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 60V 100A 8VSON |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Ta) | 4.5V, 10V | 2.2 mOhm @ 28A, 10V | 2.3V @ 250µA | 53nC @ 10V | ±20V | 4230pF @ 30V | - | 3.1W (Ta), 195W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 100V TO-220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 150A (Ta) | 6V, 10V | 3.6 mOhm @ 100A, 10V | 3.4V @ 250µA | 101nC @ 10V | ±20V | 7930pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Texas Instruments |
MOSFET N-CH 100V 200A TO263 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 200A (Ta) | 6V, 10V | 2.4 mOhm @ 100A, 10V | 3.2V @ 250µA | 153nC @ 10V | ±20V | 12000pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | DDPAK/TO-263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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Texas Instruments |
MOSFET N-CH 100V TO-220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 150A (Ta) | 6V, 10V | 2.7 mOhm @ 100A, 10V | 3.2V @ 250µA | 153nC @ 10V | ±20V | 12000pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Texas Instruments |
MOSFET P-CH 12V 1.8A PICOSTAR |
в производстве | P-Channel | MOSFET (Metal Oxide) | 12V | 1.8A (Ta) | 1.5V, 4.5V | 116 mOhm @ 400mA, 4.5V | 0.95V @ 250µA | 1.23nC @ 4.5V | -6V | 234pF @ 6V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
MOSFET P-CH 20V LGA |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 1.6A (Ta) | 1.8V, 4.5V | 205 mOhm @ 500mA, 8V | 1.2V @ 250µA | 0.959nC @ 4.5V | -12V | 198pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
MOSFET P-CH 20V 2.5A 3PICOSTAR |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 2.5A (Ta) | 1.8V, 4.5V | 88 mOhm @ 500mA, 8V | 1.2V @ 250µA | 0.913nC @ 4.5V | -12V | 189pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-PICOSTAR | 3-XFDFN |
