|
Toshiba Semiconductor and Storage |
DIODE 10V 700MW SFLAT |
устарелый | 10V | ±10% | 700mW | 30 Ohms | 10µA @ 6V | 1V @ 200mA | -40°C ~ 150°C | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) |
|
Toshiba Semiconductor and Storage |
DIODE 11V 700MW SFLAT |
устарелый | 11V | ±10% | 700mW | 30 Ohms | 10µA @ 7V | 1V @ 200mA | -40°C ~ 150°C | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) |
|
Toshiba Semiconductor and Storage |
DIODE 12V 700MW SFLAT |
устарелый | 12V | ±10% | 700mW | 30 Ohms | 10µA @ 8V | 1V @ 200mA | -40°C ~ 150°C | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) |
|
Toshiba Semiconductor and Storage |
DIODE 22V 700MW SFLAT |
устарелый | 22V | ±10% | 700mW | 30 Ohms | 10µA @ 16V | 1V @ 200mA | -40°C ~ 150°C | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) |
|
Toshiba Semiconductor and Storage |
DIODE 30V 700MW SFLAT |
устарелый | 30V | ±10% | 700mW | 30 Ohms | 10µA @ 21V | 1V @ 200mA | -40°C ~ 150°C | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) |
|
Toshiba Semiconductor and Storage |
DIODE 33V 700MW SFLAT |
устарелый | 33V | ±10% | 700mW | 30 Ohms | 10µA @ 26.4V | 1V @ 200mA | -40°C ~ 150°C | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) |
|
Toshiba Semiconductor and Storage |
DIODE 47V 700MW SFLAT |
устарелый | 47V | ±10% | 700mW | 65 Ohms | 10µA @ 37.6V | 1V @ 200mA | -40°C ~ 150°C | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) |
|
Toshiba Semiconductor and Storage |
DIODE 18V 700MW SFLAT |
устарелый | 18V | ±10% | 700mW | 30 Ohms | 10µA @ 13V | 1V @ 200mA | -40°C ~ 150°C | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) |
|
Toshiba Semiconductor and Storage |
DIODE 9.1V 700MW SFLAT |
устарелый | 9.1V | ±10% | 700mW | 30 Ohms | 10µA @ 5.5V | 1V @ 200mA | -40°C ~ 150°C | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) |
|
Toshiba Semiconductor and Storage |
DIODE 6.8V 700MW SFLAT |
в производстве | 6.8V | ±10% | 700mW | 60 Ohms | 10µA @ 3V | 1V @ 200mA | -40°C ~ 150°C | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) |
|
Toshiba Semiconductor and Storage |
DIODE 8.2V 700MW SFLAT |
устарелый | 8.2V | ±10% | 700mW | 30 Ohms | 10µA @ 4.9V | 1V @ 200mA | -40°C ~ 150°C | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) |
|
Toshiba Semiconductor and Storage |
DIODE 7.5V 700MW SFLAT |
устарелый | 7.5V | ±10% | 700mW | 30 Ohms | 10µA @ 4.5V | 1V @ 200mA | -40°C ~ 150°C | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) |
|
Toshiba Semiconductor and Storage |
DIODE 15V 700MW SFLAT |
в производстве | 15V | ±10% | 700mW | 30 Ohms | 10µA @ 10V | 1V @ 200mA | -40°C ~ 150°C | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) |
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ3000 V |
в производстве | 6.2V | ±9.68% | 700mW | 60 Ohms | 10µA @ 3V | 1V @ 200mA | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) |
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ3000 V |
в производстве | 10V | ±10% | 700mW | 30 Ohms | 10µA @ 6V | 1V @ 200mA | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) |
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ3000 V |
в производстве | 11V | ±10% | 700mW | 30 Ohms | 10µA @ 7V | 1V @ 200mA | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) |
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ3000 V |
в производстве | 12V | ±10% | 700mW | 30 Ohms | 10µA @ 8V | 1V @ 200mA | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) |
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ3000 V |
в производстве | 13V | ±10% | 700mW | 30 Ohms | 10µA @ 9V | 1V @ 200mA | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) |
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ3000 V |
в производстве | 16V | ±10% | 700mW | 30 Ohms | 10µA @ 11V | 1V @ 200mA | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) |
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ3000 V |
в производстве | 18V | ±10% | 700mW | 30 Ohms | 10µA @ 13V | 1V @ 200mA | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) |
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ3000 V |
в производстве | 20V | ±10% | 700mW | 30 Ohms | 10µA @ 14V | 1V @ 200mA | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) |
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ3000 V |
в производстве | 22V | ±10% | 700mW | 30 Ohms | 10µA @ 16V | 1V @ 200mA | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) |
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ3000 V |
в производстве | 24V | ±10% | 700mW | 30 Ohms | 10µA @ 17V | 1V @ 200mA | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) |
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ3000 V |
в производстве | 27V | ±10% | 700mW | 30 Ohms | 10µA @ 19V | 1V @ 200mA | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) |
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ3000 V |
в производстве | 30V | ±10% | 700mW | 30 Ohms | 10µA @ 21V | 1V @ 200mA | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) |
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ3000 V |
в производстве | 36V | ±10% | 700mW | 30 Ohms | 10µA @ 28.8V | 1V @ 200mA | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) |
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ3000 V |
в производстве | 39V | ±10% | 700mW | 35 Ohms | 10µA @ 31.2V | 1V @ 200mA | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) |
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ3000 V |
в производстве | 43V | ±10% | 700mW | 40 Ohms | 10µA @ 34.4V | 1V @ 200mA | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) |
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ3000 V |
в производстве | 47V | ±10% | 700mW | 65 Ohms | 10µA @ 37.6V | 1V @ 200mA | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) |
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE M-FLAT MOQ3000 V |
в производстве | 12V | ±10% | 2W | 30 Ohms | 10µA @ 8V | 1.2V @ 200mA | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) |
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE M-FLAT MOQ3000 V |
в производстве | 13V | ±10% | 2W | 30 Ohms | 10µA @ 9V | 1.2V @ 200mA | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) |
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE M-FLAT MOQ3000 V |
в производстве | 15V | ±10% | 2W | 30 Ohms | 10µA @ 10V | 1.2V @ 200mA | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) |
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE M-FLAT MOQ3000 V |
в производстве | 16V | ±10% | 2W | 30 Ohms | 10µA @ 11V | 1.2V @ 200mA | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) |
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE M-FLAT MOQ3000 V |
в производстве | 18V | ±10% | 2W | 30 Ohms | 10µA @ 13V | 1.2V @ 200mA | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) |
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE M-FLAT MOQ3000 V |
в производстве | 20V | ±10% | 2W | 30 Ohms | 10µA @ 14V | 1.2V @ 200mA | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) |
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE M-FLAT MOQ3000 V |
в производстве | 22V | ±10% | 2W | 30 Ohms | 10µA @ 16V | 1.2V @ 200mA | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) |
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE M-FLAT MOQ3000 V |
в производстве | 24V | ±10% | 2W | 30 Ohms | 10µA @ 17V | 1.2V @ 200mA | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) |
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE M-FLAT MOQ3000 V |
в производстве | 27V | ±10% | 2W | 30 Ohms | 10µA @ 19V | 1.2V @ 200mA | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) |