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Производители для Транзисторы - биполярные (BJT) - массивы

Analog Devices, Inc.
Central Semiconductor
Diodes Incorporated
Infineon Technologies
Micro Commercial Components (MCC)
Microsemi
Nexperia
ON Semiconductor
Panasonic
ROHM Semiconductor
Sanken Electric Co., Ltd.
STMicroelectronics
Texas Instruments
Toshiba Semiconductor and Storage
TT Electronics/Optek Technology
номер части Производитель / Марка Краткое описание Статус деталиТип транзистораТок - коллектор (Ic) (макс.)Напряжение - Разрыв эмиттера коллектора (макс.)Vce Saturation (Макс.) @ Ib, IcТок - отсечка коллектора (макс.)Постоянный ток постоянного тока (hFE) (мин.) @ Ic, VceМощность - макс.Частота - переходРабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
HN1A01FE-Y,LF
 Toshiba Semiconductor and Storage TRANSISTOR 2PNP 50V 0.15A ES6 в производстве2 PNP (Dual)150mA50V300mV @ 10mA, 100mA100nA (ICBO)120 @ 2mA, 6V100mW80MHz150°C (TJ)SMD Поверхностный монтажSOT-563, SOT-666ES6
HN1C01FE-GR,LF
 Toshiba Semiconductor and Storage TRANSISTOR 2NPN 50V 0.15A ES6 в производстве2 NPN (Dual)150mA50V250mV @ 10mA, 100mA100nA (ICBO)200 @ 2mA, 6V100mW80MHz150°C (TJ)SMD Поверхностный монтажSOT-563, SOT-666ES6
HN1B04FU-Y,LF
 Toshiba Semiconductor and Storage X34 PB-F US6 PLN LF TRANSISTOR в производствеNPN, PNP150mA50V250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA100nA (ICBO)120 @ 2mA, 6V200mW150MHz125°C (TJ)SMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
HN2A01FU-Y(TE85L,F
 Toshiba Semiconductor and Storage TRANSISTOR 2PNP 50V 0.15A US6 в производстве2 PNP (Dual)150mA50V300mV @ 10mA, 100mA100nA (ICBO)120 @ 2mA, 6V200mW80MHz125°C (TJ)SMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
HN2C01FU-GR(T5L,F)
 Toshiba Semiconductor and Storage TRANSISTOR 2NPN 50V 0.15A US6 в производстве2 NPN (Dual)150mA50V250mV @ 10mA, 100mA100nA (ICBO)200 @ 2mA, 6V200mW80MHz125°C (TJ)SMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
2SA1873-GR(TE85L,F
 Toshiba Semiconductor and Storage TRANSISTOR 2PNP 50V 0.15A USV в производстве2 PNP (Dual) Matched Pair, Common Emitter150mA50V300mV @ 10mA, 100mA100nA (ICBO)200 @ 2mA, 6V200mW80MHz125°C (TJ)SMD Поверхностный монтаж5-TSSOP, SC-70-5, SOT-353USV
HN1C01FYTE85LF
 Toshiba Semiconductor and Storage TRANSISTOR 2NPN 50V 0.15A SM6 в производстве2 NPN (Dual)150mA50V250mV @ 10mA, 100mA100nA (ICBO)120 @ 2mA, 6V300mW80MHz125°C (TJ)SMD Поверхностный монтажSC-74, SOT-457SM6
2SA1618-GR(TE85L,F
 Toshiba Semiconductor and Storage TRANSISTOR 2PNP 50V 0.15A SMV в производстве2 PNP (Dual) Matched Pair, Common Emitter150mA50V300mV @ 10mA, 100mA100nA (ICBO)200 @ 2mA, 6V300mW80MHz125°C (TJ)SMD Поверхностный монтажSC-74A, SOT-753SMV
HN4B04J(TE85L,F)
 Toshiba Semiconductor and Storage TRANSISTOR NPN/PNP 30V 0.5A SMV устарелыйNPN, PNP500mA30V250mV @ 10mA, 100mA100µA (ICBO)70 @ 100mA, 1V300mW200MHz150°C (TJ)SMD Поверхностный монтажSC-74A, SOT-753SMV
HN2C01FU-Y(TE85L,F
 Toshiba Semiconductor and Storage TRANSISTOR 2NPN 50V 0.15A US6 в производстве2 NPN (Dual)150mA50V250mV @ 10mA, 100mA100nA (ICBO)120 @ 2mA, 6V200mW80MHz125°C (TJ)SMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
HN4C06J-BL(TE85L,F
 Toshiba Semiconductor and Storage TRANSISTOR 2 NPN 120V 100MA SC74A устарелый2 NPN (Dual) Common Emitter100mA120V300mV @ 1mA, 10mA100nA (ICBO)200 @ 2mA, 6V300mW100MHz150°C (TJ)SMD Поверхностный монтажSC-74A, SOT-753SMV
HN1A01FU-GR,LF
 Toshiba Semiconductor and Storage TRANSISTOR 2PNP 50V 0.15A US6-PLN Discontinued at -2 PNP (Dual)150mA50V300mV @ 10mA, 100mA100nA (ICBO)200 @ 2mA, 6V200mW80MHz125°C (TJ)SMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
HN1A01FU-Y,LF
 Toshiba Semiconductor and Storage TRANSISTOR 2PNP 50V 0.15A US6 в производстве2 PNP (Dual)150mA50V300mV @ 10mA, 100mA100nA (ICBO)120 @ 2mA, 6V200mW80MHz125°C (TJ)SMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
HN1C01FE-Y,LF
 Toshiba Semiconductor and Storage TRANSISTOR 2NPN 50V 0.15A ES6 в производстве2 NPN (Dual)150mA50V250mV @ 10mA, 100mA100nA (ICBO)120 @ 2mA, 6V100mW80MHz150°C (TJ)SMD Поверхностный монтажSOT-563, SOT-666ES6
HN2C01FEYTE85LF
 Toshiba Semiconductor and Storage TRANSISTOR 2NPN 50V 0.15A ES6 устарелый2 NPN (Dual)150mA50V250mV @ 10mA, 100mA100nA (ICBO)120 @ 2mA, 6V100mW60MHz150°C (TJ)SMD Поверхностный монтажSOT-563, SOT-666ES6
2SC4944-Y(TE85L,F)
 Toshiba Semiconductor and Storage TRANSISTOR 2NPN 50V 0.15A USV в производстве2 NPN (Dual) Matched Pair, Common Emitter150mA50V250mV @ 10mA, 100mA100nA (ICBO)120 @ 2mA, 6V200mW80MHz125°C (TJ)SMD Поверхностный монтаж5-TSSOP, SC-70-5, SOT-353USV
HN4C51J(TE85L,F)
 Toshiba Semiconductor and Storage TRANSISTOR 2NPN 120V 0.1A SMV в производстве2 NPN (Dual) Common Base100mA120V300mV @ 1mA, 10mA100nA (ICBO)200 @ 2mA, 6V300mW100MHz150°C (TJ)SMD Поверхностный монтажSC-74A, SOT-753SMV
HN1A01F-Y(TE85L,F)
 Toshiba Semiconductor and Storage TRANSISTOR 2PNP 50V 0.15A SM6 в производстве2 PNP (Dual)150mA50V300mV @ 10mA, 100mA100nA (ICBO)120 @ 2mA, 6V300mW80MHz125°C (TJ)SMD Поверхностный монтажSC-74, SOT-457SM6
2SC4207-BL(TE85L,F
 Toshiba Semiconductor and Storage TRANSISTOR 2NPN 50V 0.15A SMV в производстве2 NPN (Dual)150mA50V250mV @ 10mA, 100mA100nA (ICBO)350 @ 2mA, 6V300mW80MHz125°C (TJ)SMD Поверхностный монтажSC-74A, SOT-753SMV
HN1B04FE-Y,LF
 Toshiba Semiconductor and Storage TRANSISTOR NPN/PNP 50V 0.15A ES6 в производствеNPN, PNP150mA50V250mV @ 10mA, 100mA100nA (ICBO)120 @ 2mA, 6V100mW80MHz150°C (TJ)SMD Поверхностный монтажSOT-563, SOT-666ES6
HN1B04FU-Y(T5L,F,T
 Toshiba Semiconductor and Storage TRANSISTOR NPN/PNP 50V 0.15A US6 в производствеNPN, PNP150mA50V250mV @ 10mA, 100mA100nA (ICBO)120 @ 2mA, 6V200mW150MHz125°C (TJ)SMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
2SC4207-GR(TE85L,F
 Toshiba Semiconductor and Storage TRANSISTOR 2NPN 50V 0.15A SMV в производстве2 NPN (Dual) Common Emitter150mA50V250mV @ 10mA, 100mA100nA (ICBO)200 @ 2mA, 6V300mW80MHz125°C (TJ)SMD Поверхностный монтажSC-74A, SOT-753SMV
2SA1873-Y(TE85L,F)
 Toshiba Semiconductor and Storage TRANSISTOR 2PNP 50V 0.15A USV в производстве2 PNP (Dual) Matched Pair, Common Emitter150mA50V300mV @ 10mA, 100mA100nA (ICBO)120 @ 2mA, 6V200mW80MHz125°C (TJ)SMD Поверхностный монтаж5-TSSOP, SC-70-5, SOT-353USV
2SC4207-Y(TE85L,F)
 Toshiba Semiconductor and Storage TRANSISTOR 2NPN 50V 0.15A SMV в производстве2 NPN (Dual) Matched Pair, Common Emitter150mA50V250mV @ 10mA, 100mA100nA (ICBO)120 @ 2mA, 6V300mW80MHz125°C (TJ)SMD Поверхностный монтажSC-74A, SOT-753SMV
HN4B01JE(TE85L,F)
 Toshiba Semiconductor and Storage TRANSISTOR NPN/PNP 50V 0.15A ESV PLN в производствеNPN, PNP (Emitter Coupled)150mA50V250mV @ 10mA, 100mA100nA (ICBO)120 @ 10MA, 100MA100mW80MHz150°C (TJ)SMD Поверхностный монтажSOT-553ESV
HN1C03FU-A(TE85L,F
 Toshiba Semiconductor and Storage TRANSISTOR 2NPN 20V 0.3A US6 в производстве2 NPN (Dual)300mA20V100mV @ 3mA, 30mA100nA (ICBO)200 @ 4mA, 2V200mW30MHz150°C (TJ)SMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
2SA1618-Y(TE85L,F)
 Toshiba Semiconductor and Storage TRANSISTOR 2PNP 50V 0.15A SMV в производстве2 PNP (Dual) Matched Pair, Common Emitter150mA50V300mV @ 10mA, 100mA100nA (ICBO)120 @ 2mA, 6V300mW80MHz125°C (TJ)SMD Поверхностный монтажSC-74A, SOT-753SMV
ULN2004AFWG,N,E
 Toshiba Semiconductor and Storage IC POWER RELAY 7NPN 11 16SOL Discontinued at -7 NPN Darlington500mA50V1.6V @ 500µA, 350mA50µA1000 @ 350mA, 2V1.25W
-
-40°C ~ 85°C (TA)
-
16-SOIC (0.154", 3.90mm Width)16-SOL
HN1B04FE-GR,LF
 Toshiba Semiconductor and Storage TRANSISTOR NPN/PNP 50V 0.15A ES6 в производствеNPN, PNP150mA50V250mV @ 10mA, 100mA100nA (ICBO)200 @ 2mA, 6V100mW80MHz150°C (TJ)SMD Поверхностный монтажSOT-563, SOT-666ES6
HN1B01FU-GR,LF
 Toshiba Semiconductor and Storage TRANSISTOR NPN/PNP 50V 0.15A US6-PLN в производствеNPN, PNP150mA50V250mV @ 10mA, 100mA100nA (ICBO)200 @ 2mA, 6V200mW, 210mW150MHz125°C (TJ)SMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
HN1C01FU-GR,LF
 Toshiba Semiconductor and Storage TRANSISTOR 2NPN 50V 0.15A US6 в производстве2 NPN (Dual)150mA50V250mV @ 10mA, 100mA100nA (ICBO)200 @ 2mA, 6V200mW80MHz125°C (TJ)SMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
HN1B04FU-GR,LF
 Toshiba Semiconductor and Storage TRANSISTOR NPN/PNP 50V 0.15A US6 в производствеNPN, PNP150mA50V250mV @ 10mA, 100mA100nA (ICBO)200 @ 2mA, 6V200mW150MHz125°C (TJ)SMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
HN1A01FE-GR,LF
 Toshiba Semiconductor and Storage TRANSISTOR 2PNP 50V 0.15A ES6 в производстве2 PNP (Dual)150mA50V300mV @ 10mA, 100mA100nA (ICBO)200 @ 2mA, 6V100mW80MHz150°C (TJ)SMD Поверхностный монтажSOT-563, SOT-666ES6
HN4A56JU(TE85L,F)
 Toshiba Semiconductor and Storage TRANSISTOR 2 PNP 50V 150MA 5TSSOP устарелый2 PNP (Dual)150mA50V300mV @ 10mA, 100mA100nA (ICBO)120 @ 2mA, 6V200mW60MHz150°C (TJ)SMD Поверхностный монтаж5-TSSOP, SC-70-5, SOT-353USV
TPCP8701(TE85L,F,M
 Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR в производстве2 NPN (Dual)3A80V140mV @ 20mA, 1A100nA (ICBO)400 @ 300mA, 2V1.77W
-
150°C (TJ)SMD Поверхностный монтаж8-SMD, Flat LeadPS-8
TPCP8901(TE85L,F,M
 Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR в производствеNPN, PNP1A, 800mA50V170mV @ 6mA, 300mA / 200mV @ 10mA, 300mA100nA (ICBO)400 @ 100mA, 2V / 200 @ 100mA, 2V1.48W
-
150°C (TJ)SMD Поверхностный монтаж8-SMD, Flat LeadPS-8
TPC6901(TE85L,F,M)
 Toshiba Semiconductor and Storage TRANSISTOR NPN/PNP 50V 6VS в производствеNPN, PNP1A, 700mA50V170mV @ 6mA, 300mA / 230mV @ 10mA, 300mA100nA (ICBO)400 @ 100mA, 2V / 200 @ 100mA, 2V400mW
-
150°C (TJ)SMD Поверхностный монтажSOT-23-6 Thin, TSOT-23-6VS-6 (2.9x2.8)
HN1C01F-GR(TE85L,F
 Toshiba Semiconductor and Storage TRANSISTOR 2NPN 50V 0.15A SM6 Discontinued at -2 NPN (Dual)150mA50V250mV @ 10mA, 100mA100nA (ICBO)120 @ 2mA, 6V300mW800MHz125°C (TJ)SMD Поверхностный монтажSC-74, SOT-457SM6
HN1B01FU-Y(L,F,T)
 Toshiba Semiconductor and Storage TRANSISTOR NPN/PNP 50V 0.15A US6 в производствеNPN, PNP150mA50V300mV @ 10mA, 100mA100nA (ICBO)120 @ 2mA, 6V200mW120MHz125°C (TJ)SMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
ULN2803APG,CN
 Toshiba Semiconductor and Storage TRANSISTOR 8NPN DARL 50V 0.5A 18DIP устарелый8 NPN Darlington500mA50V1.6V @ 500µA, 350mA
-
1000 @ 350mA, 2V1.47W
-
-40°C ~ 85°C (TA)Through Hole18-DIP (0.300", 7.62mm)18-DIP
ULN2003APG,CN
 Toshiba Semiconductor and Storage IC POWER RELAY 7NPN 11 16DIP устарелый7 NPN Darlington500mA50V1.6V @ 500µA, 350mA50µA1000 @ 350mA, 2V1.47W
-
-40°C ~ 85°C (TA)
-
16-DIP (0.300", 7.62mm)16-DIP
ULN2004APG,C,N
 Toshiba Semiconductor and Storage IC POWER RELAY 7NPN 11 16DIP устарелый7 NPN Darlington500mA50V1.6V @ 500µA, 350mA50µA1000 @ 350mA, 2V1.47W
-
-40°C ~ 85°C (TA)
-
16-DIP (0.300", 7.62mm)16-DIP
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