Производители для Транзисторы - биполярные (BJT) - массивы, предварительно предвзятые

номер части Производитель / Марка Краткое описание Статус деталиТип транзистораТок - коллектор (Ic) (макс.)Напряжение - Разрыв эмиттера коллектора (макс.)Resistor - Base (R1)Resistor - Emitter Base (R2)Постоянный ток постоянного тока (hFE) (мин.) @ Ic, VceVce Saturation (Макс.) @ Ib, IcТок - отсечка коллектора (макс.)Частота - переходМощность - макс.Тип монтажаУпаковка / чехолПакет устройств поставщика
Toshiba Semiconductor and Storage TRANSISTOR NPN/PNP PREBIAS 0.1W ES6 в производстве1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V10 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA500nA250MHz, 200MHz100mWSMD Поверхностный монтажSOT-563, SOT-666ES6
Toshiba Semiconductor and Storage TRANSISTOR 2NPN PREBIAS 0.1W ES6 в производстве2 NPN - Pre-Biased (Dual)100mA50V4.7 kOhms
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120 @ 1mA, 5V300mV @ 250µA, 5mA100nA (ICBO)250MHz100mWSMD Поверхностный монтажSOT-563, SOT-666ES6
Toshiba Semiconductor and Storage TRANSISTOR NPN/PNP PREBIAS 0.1W ES6 в производстве1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V10 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA500nA250MHz, 200MHz100mWSMD Поверхностный монтажSOT-563, SOT-666ES6
Toshiba Semiconductor and Storage TRANSISTOR NPN/PNP PREBIAS 0.1W ES6 в производстве1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V10 kOhms10 kOhms50 @ 10mA, 5V300mV @ 250µA, 5mA500nA250MHz, 200MHz100mWSMD Поверхностный монтажSOT-563, SOT-666ES6
Toshiba Semiconductor and Storage TRANSISTOR 2PNP PREBIAS 0.2W US6 в производстве2 PNP - Pre-Biased (Dual)100mA50V10 kOhms10 kOhms50 @ 10mA, 5V300mV @ 250µA, 5mA500nA200MHz200mWSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
Toshiba Semiconductor and Storage TRANSISTOR 2PNP PREBIAS 0.2W US6 в производстве2 PNP - Pre-Biased (Dual)100mA50V4.7 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA500nA200MHz200mWSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
Toshiba Semiconductor and Storage TRANSISTOR NPN/PNP PREBIAS 0.2W US6 в производстве1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V10 kOhms10 kOhms50 @ 10mA, 5V300mV @ 250µA, 5mA500nA200MHz200mWSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
Toshiba Semiconductor and Storage TRANSISTOR NPN/PNP PREBIAS 0.1W ES6 в производстве1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V2.2 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA100nA (ICBO)200MHz100mWSMD Поверхностный монтажSOT-563, SOT-666ES6
Toshiba Semiconductor and Storage TRANSISTOR 2PNP PREBIAS 0.3W SMV в производстве2 PNP - Pre-Biased (Dual) (Emitter Coupled)100mA50V4.7 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA100nA (ICBO)200MHz300mWSMD Поверхностный монтажSC-74A, SOT-753SMV
Toshiba Semiconductor and Storage TRANSISTOR 2NPN PREBIAS 0.1W ES6 в производстве2 NPN - Pre-Biased (Dual)100mA50V10 kOhms
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120 @ 1mA, 5V300mV @ 250µA, 5mA100nA (ICBO)250MHz100mWSMD Поверхностный монтажSOT-563, SOT-666ES6
Toshiba Semiconductor and Storage TRANSISTOR 2PNP PREBIAS 0.1W ES6 в производстве2 PNP - Pre-Biased (Dual)100mA50V47 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA500nA200MHz100mWSMD Поверхностный монтажSOT-563, SOT-666ES6
Toshiba Semiconductor and Storage TRANSISTOR 2PNP PREBIAS 0.1W ES6 в производстве2 PNP - Pre-Biased (Dual)100mA50V10 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA500nA200MHz100mWSMD Поверхностный монтажSOT-563, SOT-666ES6
Toshiba Semiconductor and Storage TRANSISTOR 2PNP PREBIAS 0.3W SM6 в производстве2 PNP - Pre-Biased (Dual)100mA50V4.7 kOhms4.7 kOhms30 @ 10mA, 5V300mV @ 250µA, 5mA100nA (ICBO)200MHz300mWSMD Поверхностный монтажSC-74, SOT-457SM6
Toshiba Semiconductor and Storage TRANSISTOR 2NPN PREBIAS 0.3W SMV в производстве2 NPN - Pre-Biased (Dual) (Emitter Coupled)100mA50V4.7 kOhms
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120 @ 1mA, 5V300mV @ 250µA, 5mA100nA (ICBO)250MHz300mWSMD Поверхностный монтажSC-74A, SOT-753SMV
Toshiba Semiconductor and Storage TRANSISTOR 2PNP PREBIAS 0.2W US6 в производстве2 PNP - Pre-Biased (Dual)100mA50V10 kOhms
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120 @ 1mA, 5V300mV @ 250µA, 5mA100nA (ICBO)200MHz200mWSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
Toshiba Semiconductor and Storage TRANSISTOR NPN/PNP PREBIAS 0.2W US6 в производстве1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V47 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA500nA200MHz200mWSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
Toshiba Semiconductor and Storage TRANSISTOR NPN/PNP PREBIAS 0.2W US6 в производстве1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V4.7 kOhms
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120 @ 1mA, 5V300mV @ 250µA, 5mA100nA (ICBO)200MHz200mWSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
Toshiba Semiconductor and Storage TRANSISTOR NPN/PNP PREBIAS 0.2W US6 в производстве1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V4.7 kOhms4.7 kOhms30 @ 10mA, 5V300mV @ 250µA, 5mA100µA (ICBO)250MHz, 200MHz200mWSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
Toshiba Semiconductor and Storage TRANSISTOR NPN/PNP PREBIAS 0.1W ES6 в производстве1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V4.7 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA100nA (ICBO)200MHz100mWSMD Поверхностный монтажSOT-563, SOT-666ES6
Toshiba Semiconductor and Storage TRANSISTOR 2NPN PREBIAS 0.3W SM6 в производстве2 NPN - Pre-Biased (Dual)100mA50V2.2 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA100nA (ICBO)250MHz300mWSMD Поверхностный монтажSC-74, SOT-457SM6
Toshiba Semiconductor and Storage TRANSISTOR 2NPN PREBIAS 0.2W US6 в производстве2 NPN - Pre-Biased (Dual)100mA50V10 kOhms
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120 @ 1mA, 5V300mV @ 250µA, 5mA100nA (ICBO)250MHz200mWSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
Toshiba Semiconductor and Storage TRANSISTOR 2NPN PREBIAS 0.1W ES6 в производстве2 NPN - Pre-Biased (Dual)100mA50V10 kOhms1 kOhms30 @ 10mA, 5V300mV @ 250µA, 5mA100nA (ICBO)250MHz100mWSMD Поверхностный монтажSOT-563, SOT-666ES6
Toshiba Semiconductor and Storage TRANSISTOR 2NPN PREBIAS 0.1W ES6 в производстве2 NPN - Pre-Biased (Dual)100mA50V47 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA100nA (ICBO)250MHz100mWSMD Поверхностный монтажSOT-563, SOT-666ES6
Toshiba Semiconductor and Storage TRANSISTOR 2NPN PREBIAS 0.1W ESV в производстве2 NPN - Pre-Biased (Dual) (Emitter Coupled)100mA50V47 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA100nA (ICBO)250MHz100mWSMD Поверхностный монтажSOT-553ESV
Toshiba Semiconductor and Storage TRANSISTOR 2NPN PREBIAS 0.1W ESV в производстве2 NPN - Pre-Biased (Dual) (Emitter Coupled)100mA50V10 kOhms10 kOhms50 @ 10mA, 5V300mV @ 250µA, 5mA100nA (ICBO)250MHz100mWSMD Поверхностный монтажSOT-553ESV
Toshiba Semiconductor and Storage TRANSISTOR 2NPN PREBIAS 0.3W SM6 в производстве2 NPN - Pre-Biased (Dual)100mA50V10 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA100nA (ICBO)250MHz300mWSMD Поверхностный монтажSC-74, SOT-457SM6
Toshiba Semiconductor and Storage TRANSISTOR NPN/PNP PREBIAS 0.2W US6 в производстве1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V10 kOhms10 kOhms50 @ 10mA, 5V300mV @ 250µA, 5mA100µA (ICBO)250MHz, 200MHz200mWSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
Toshiba Semiconductor and Storage TRANSISTOR 2NPN PREBIAS 0.5W US6 в производстве2 NPN - Pre-Biased (Dual)100mA50V10 kOhms10 kOhms50 @ 10mA, 5V300mV @ 250µA, 5mA100nA (ICBO)250MHz500mWSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
Toshiba Semiconductor and Storage TRANSISTOR 2NPN PREBIAS 0.1W ES6 в производстве2 NPN - Pre-Biased (Dual)100mA50V4.7 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA500nA250MHz100mWSMD Поверхностный монтажSOT-563, SOT-666ES6
Toshiba Semiconductor and Storage TRANSISTOR NPN/PNP PREBIAS 0.1W ES6 в производстве1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V22 kOhms22 kOhms70 @ 10mA, 5V300mV @ 250µA, 5mA100nA (ICBO)250MHz100mWSMD Поверхностный монтажSOT-563, SOT-666ES6
Toshiba Semiconductor and Storage TRANSISTOR 2NPN PREBIAS 0.1W ES6 в производстве2 NPN - Pre-Biased (Dual)100mA50V10 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA100nA (ICBO)250MHz100mWSMD Поверхностный монтажSOT-563, SOT-666ES6
Toshiba Semiconductor and Storage TRANSISTOR NPN/PNP PREBIAS 0.1W ES6 в производстве1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V10 kOhms10 kOhms50 @ 10mA, 5V300mV @ 250µA, 5mA100nA (ICBO)250MHz100mWSMD Поверхностный монтажSOT-563, SOT-666ES6
Toshiba Semiconductor and Storage TRANSISTOR 2NPN PREBIAS 0.1W ES6 в производстве2 NPN - Pre-Biased (Dual)100mA50V2.2 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA500nA250MHz100mWSMD Поверхностный монтажSOT-563, SOT-666ES6
Toshiba Semiconductor and Storage TRANSISTOR NPN/PNP PREBIAS 0.1W ES6 в производстве1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V4.7 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA500nA250MHz, 200MHz100mWSMD Поверхностный монтажSOT-563, SOT-666ES6
Toshiba Semiconductor and Storage TRANSISTOR 2NPN PREBIAS 0.2W US6 в производстве2 NPN - Pre-Biased (Dual)100mA50V22 kOhms22 kOhms70 @ 10mA, 5V300mV @ 250µA, 5mA100nA (ICBO)250MHz200mWSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
Toshiba Semiconductor and Storage TRANSISTOR 2NPN PREBIAS 0.1W US6 в производстве2 NPN - Pre-Biased (Dual)100mA50V4.7 kOhms
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120 @ 1mA, 5V300mV @ 250µA, 5mA100nA (ICBO)250MHz100mWSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
Toshiba Semiconductor and Storage TRANSISTOR NPN/PNP PREBIAS 0.2W US6 в производстве1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V2.2 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA100µA (ICBO)250MHz, 200MHz200mWSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
Toshiba Semiconductor and Storage TRANSISTOR NPN/PNP PREBIAS 0.1W ES6 в производстве1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V4.7 kOhms
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120 @ 1mA, 5V300mV @ 250µA, 5mA100nA (ICBO)250MHz, 200MHz100mWSMD Поверхностный монтажSOT-563, SOT-666ES6
Toshiba Semiconductor and Storage TRANSISTOR NPN/PNP PREBIAS 0.1W ES6 в производстве1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V47 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA100nA (ICBO)250MHz100mWSMD Поверхностный монтажSOT-563, SOT-666ES6
Toshiba Semiconductor and Storage TRANSISTOR NPN/PNP PREBIAS 0.2W US6 в производстве1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V4.7 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA500nA200MHz200mWSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
Toshiba Semiconductor and Storage TRANSISTOR 2NPN PREBIAS 0.2W US6 в производстве2 NPN - Pre-Biased (Dual)100mA50V2.2 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA500nA250MHz200mWSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
Toshiba Semiconductor and Storage TRANSISTOR 2NPN PREBIAS 0.2W US6 в производстве2 NPN - Pre-Biased (Dual)100mA50V10 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA500nA250MHz200mWSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
Toshiba Semiconductor and Storage TRANSISTOR 2NPN PREBIAS 0.2W US6 в производстве2 NPN - Pre-Biased (Dual)100mA50V47 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA500nA250MHz200mWSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
Toshiba Semiconductor and Storage TRANSISTOR NPN/PNP PREBIAS 0.2W US6 устарелый1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V2.2 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA100nA (ICBO)200MHz200mWSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
Toshiba Semiconductor and Storage TRANSISTOR NPN/PNP PREBIAS 0.2W US6 устарелый1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V47 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA100µA (ICBO)250MHz, 200MHz200mWSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
Toshiba Semiconductor and Storage TRANSISTOR 2NPN PREBIAS 0.3W SMV в производстве2 NPN - Pre-Biased (Dual)100mA50V10 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA100nA (ICBO)250MHz300mWSMD Поверхностный монтажSC-74A, SOT-753SMV
Toshiba Semiconductor and Storage TRANSISTOR 2NPN PREBIAS 0.1W ES6 устарелый2 NPN - Pre-Biased (Dual)100mA50V47 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA100nA (ICBO)250MHz100mWSMD Поверхностный монтажSOT-563, SOT-666ES6
Toshiba Semiconductor and Storage TRANSISTOR 2NPN PREBIAS 0.1W ES6 устарелый2 NPN - Pre-Biased (Dual)100mA50V4.7 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA100nA (ICBO)250MHz100mWSMD Поверхностный монтажSOT-563, SOT-666ES6
Toshiba Semiconductor and Storage TRANSISTOR 2NPN PREBIAS 0.1W ES6 устарелый2 NPN - Pre-Biased (Dual)100mA50V10 kOhms10 kOhms50 @ 10mA, 5V300mV @ 250µA, 5mA100nA (ICBO)250MHz100mWSMD Поверхностный монтажSOT-563, SOT-666ES6
Toshiba Semiconductor and Storage TRANSISTOR 2PNP PREBIAS 0.1W ES6 устарелый2 PNP - Pre-Biased (Dual)100mA50V2.2 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA100nA (ICBO)250MHz100mWSMD Поверхностный монтажSOT-563, SOT-666ES6
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