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Производители для Транзисторы - биполярные (BJT) - одиночные, предварительно предвзятые

Diodes Incorporated
Infineon Technologies
Micro Commercial Components (MCC)
Nexperia
NXP Semiconductors
ON Semiconductor
Panasonic
ROHM Semiconductor
Toshiba Semiconductor and Storage
номер части Производитель / Марка Краткое описание Статус деталиТип транзистораТок - коллектор (Ic) (макс.)Напряжение - Разрыв эмиттера коллектора (макс.)Resistor - Base (R1)Resistor - Emitter Base (R2)Постоянный ток постоянного тока (hFE) (мин.) @ Ic, VceVce Saturation (Макс.) @ Ib, IcТок - отсечка коллектора (макс.)Частота - переходМощность - макс.Тип монтажаУпаковка / чехолПакет устройств поставщика
RN1301,LF
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS NPN 0.1W USM в производствеNPN - Pre-Biased100mA50V4.7 kOhms4.7 kOhms30 @ 10mA, 5V300mV @ 250µA, 5mA500nA250MHz100mWSMD Поверхностный монтажSC-70, SOT-323USM
RN1401,LF
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS NPN 0.2W S-MINI в производствеNPN - Pre-Biased100mA50V4.7 kOhms4.7 kOhms30 @ 10mA, 5V300mV @ 250µA, 5mA500nA250MHz200mWSMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3S-Mini
RN2301,LF
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS PNP 0.1W USM в производствеPNP - Pre-Biased100mA50V4.7 kOhms4.7 kOhms30 @ 10mA, 5V300mV @ 250µA, 5mA500nA200MHz100mWSMD Поверхностный монтажSC-70, SOT-323USM
RN1107,LF(CT
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS NPN 0.1W SSM в производствеNPN - Pre-Biased100mA50V10 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA500nA250MHz100mWSMD Поверхностный монтажSC-75, SOT-416SSM
RN1103,LF(CT
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS NPN 0.1W SSM в производствеNPN - Pre-Biased100mA50V22 kOhms22 kOhms70 @ 10mA, 5V300mV @ 250µA, 5mA500nA250MHz100mWSMD Поверхностный монтажSC-75, SOT-416SSM
RN2101,LF(CT
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS PNP 0.1W SSM в производствеPNP - Pre-Biased100mA50V4.7 kOhms4.7 kOhms30 @ 10mA, 5V300mV @ 250µA, 5mA500nA200MHz100mWSMD Поверхностный монтажSC-75, SOT-416SSM
RN1102,LF(CT
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS NPN 50V 0.1W SSM в производствеNPN - Pre-Biased100mA50V10 kOhms10 kOhms50 @ 10mA, 5V300mV @ 250µA, 5mA500nA250MHz100mWSMD Поверхностный монтажSC-75, SOT-416SSM
RN1316,LF
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS NPN 0.1W USM в производствеNPN - Pre-Biased100mA50V4.7 kOhms10 kOhms50 @ 10mA, 5V300mV @ 250µA, 5mA500nA250MHz100mWSMD Поверхностный монтажSC-70, SOT-323USM
RN1102MFV,L3F
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS NPN 50V 0.15W VESM в производствеNPN - Pre-Biased100mA50V10 kOhms10 kOhms50 @ 10mA, 5V300mV @ 500µA, 5mA500nA
-
150mWSMD Поверхностный монтажSOT-723VESM
RN1406,LF
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS NPN 0.2W S-MINI в производствеNPN - Pre-Biased100mA50V4.7 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA500nA250MHz200mWSMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3S-Mini
RN1305,LF
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS NPN 0.1W USM в производствеNPN - Pre-Biased100mA50V2.2 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA500nA250MHz100mWSMD Поверхностный монтажSC-70, SOT-323USM
RN2316(TE85L,F)
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS PNP 0.1W USM в производствеPNP - Pre-Biased100mA50V4.7 kOhms10 kOhms50 @ 10mA, 5V300mV @ 250µA, 5mA500nA200MHz100mWSMD Поверхностный монтажSC-70, SOT-323USM
RN1105,LF(CT
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS NPN 50V 0.1W SSM в производствеNPN - Pre-Biased100mA50V2.2 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA500nA250MHz100mWSMD Поверхностный монтажSC-75, SOT-416SSM
RN2315TE85LF
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS PNP 0.1W SC-70 в производствеPNP - Pre-Biased100mA50V2.2 kOhms10 kOhms50 @ 10mA, 5V300mV @ 250µA, 5mA500nA200MHz100mWSMD Поверхностный монтажSC-70, SOT-323USM
RN1413(TE85L,F)
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS NPN 0.2W SMINI в производствеNPN - Pre-Biased100mA50V47 kOhms
-
120 @ 1mA, 5V300mV @ 250µA, 5mA100nA (ICBO)250MHz200mWSMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3S-Mini
RN1308,LF
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS NPN 0.1W USM в производствеNPN - Pre-Biased100mA50V22 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA500nA250MHz100mWSMD Поверхностный монтажSC-70, SOT-323USM
RN1106MFV,L3F
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS NPN в производствеNPN - Pre-Biased100mA50V4.7 kOhms47 kOhms80 @ 10mA, 5V300mV @ 500µA, 5mA500nA
-
150mWSMD Поверхностный монтажSOT-723VESM
RN1104,LF(CT
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS NPN 50V 100MA SSM в производствеNPN - Pre-Biased100mA50V47 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA500nA250MHz100mWSMD Поверхностный монтажSC-75, SOT-416SSM
RN1115MFV,L3F
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS NPN 50V SOT723 устарелыйNPN - Pre-Biased100mA50V2.2 kOhms10 kOhms50 @ 10mA, 5V300mV @ 250µA, 5mA500nA250MHz150mWSMD Поверхностный монтажSOT-723VESM
RN1103MFV,L3F
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS NPN 150MW VESM в производствеNPN - Pre-Biased100mA50V22 kOhms22 kOhms70 @ 10mA, 5V300mV @ 500µA, 5mA500nA
-
150mWSMD Поверхностный монтажSOT-723VESM
RN2404,LF
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS PNP 50V TO236-3 устарелыйPNP - Pre-Biased100mA50V47 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA500nA200MHz200mWSMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3S-Mini
RN1404S,LF
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS NPN 0.2W S-MINI в производствеNPN - Pre-Biased100mA50V47 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA500nA250MHz200mWSMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3S-Mini
RN2112,LF(CT
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS PNP 50V 0.1W SSM в производствеPNP - Pre-Biased100mA50V22 kOhms
-
120 @ 1mA, 5V300mV @ 250µA, 5mA100nA (ICBO)200MHz100mWSMD Поверхностный монтажSC-75, SOT-416SSM
RN2313(TE85L,F)
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS PNP 0.1W USM в производствеPNP - Pre-Biased100mA50V47 kOhms
-
120 @ 1mA, 5V300mV @ 250µA, 5mA100nA (ICBO)200MHz100mWSMD Поверхностный монтажSC-70, SOT-323USM
RN1441ATE85LF
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS NPN 0.2W S-MINI устарелыйNPN - Pre-Biased300mA20V5.6 kOhms
-
200 @ 4mA, 2V100mV @ 3mA, 30mA100nA (ICBO)30MHz200mWSMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3S-Mini
RN1415(TE85L,F)
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS NPN 0.2W S-MINI в производствеNPN - Pre-Biased100mA50V2.2 kOhms10 kOhms50 @ 10mA, 5V300mV @ 250µA, 5mA500nA250MHz200mWSMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3S-Mini
RN1111,LF(CT
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS NPN 0.1W SSM в производствеNPN - Pre-Biased100mA50V10 kOhms
-
120 @ 1mA, 5V300mV @ 250µA, 5mA100nA (ICBO)250MHz100mWSMD Поверхностный монтажSC-75, SOT-416SSM
RN1101MFV,L3F
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS NPN 50V SOT723 устарелыйNPN - Pre-Biased100mA50V4.7 kOhms4.7 kOhms30 @ 10mA, 5V300mV @ 500µA, 5mA500nA
-
150mWSMD Поверхностный монтажSOT-723VESM
RN1105MFV,L3F
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS NPN 0.15W VESM в производствеNPN - Pre-Biased100mA50V2.2 kOhms47 kOhms80 @ 10mA, 5V300mV @ 500µA, 5mA500nA
-
150mWSMD Поверхностный монтажSOT-723VESM
RN1408,LF(B
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS NPN 50V 0.2W SMINI в производствеNPN - Pre-Biased100mA50V22 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA500nA250MHz200mWSMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3S-Mini
RN1306,LF
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS NPN 0.1W USM в производствеNPN - Pre-Biased100mA50V4.7 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA500nA250MHz100mWSMD Поверхностный монтажSC-70, SOT-323USM
RN1115,LF(CT
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS NPN 0.1W SSM в производствеNPN - Pre-Biased100mA50V2.2 kOhms10 kOhms50 @ 10mA, 5V300mV @ 250µA, 5mA500nA250MHz100mWSMD Поверхностный монтажSC-75, SOT-416SSM
RN1318(TE85L,F)
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS NPN 0.1W USM в производствеNPN - Pre-Biased100mA50V47 kOhms10 kOhms50 @ 10mA, 5V300mV @ 250µA, 5mA500nA250MHz100mWSMD Поверхностный монтажSC-70, SOT-323USM
RN2111,LF(CB
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS PNP 50V 0.1W SSM в производствеPNP - Pre-Biased100mA50V10 kOhms
-
120 @ 1mA, 5V300mV @ 250µA, 5mA100nA (ICBO)200MHz100mWSMD Поверхностный монтажSC-75, SOT-416SSM
RN2116,LF(CT
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS PNP 50V 0.1W SSM в производствеPNP - Pre-Biased100mA50V4.7 kOhms10 kOhms50 @ 10mA, 5V300mV @ 250µA, 5mA500nA200MHz100mWSMD Поверхностный монтажSC-75, SOT-416SSM
RN2110,LF(CB
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS PNP 50V 0.1W SSM в производствеPNP - Pre-Biased100mA50V4.7 kOhms
-
120 @ 1mA, 5V300mV @ 250µA, 5mA100nA (ICBO)200MHz100mWSMD Поверхностный монтажSC-75, SOT-416SSM
RN2107,LF(CB
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS PNP 50V 0.1W SSM в производствеPNP - Pre-Biased100mA50V10 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA500nA200MHz100mWSMD Поверхностный монтажSC-75, SOT-416SSM
RN2312(TE85L,F)
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS PNP 0.1W USM в производствеPNP - Pre-Biased100mA50V22 kOhms
-
120 @ 1mA, 5V300mV @ 250µA, 5mA100nA (ICBO)200MHz100mWSMD Поверхностный монтажSC-70, SOT-323USM
RN2314(TE85L,F)
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS PNP 0.1W USM в производствеPNP - Pre-Biased100mA50V1 kOhms10 kOhms50 @ 10mA, 5V300mV @ 250µA, 5mA500nA200MHz100mWSMD Поверхностный монтажSC-70, SOT-323USM
RN1312(TE85L,F)
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS NPN 0.15W USM в производствеNPN - Pre-Biased100mA50V22 kOhms
-
120 @ 1mA, 5V300mV @ 250µA, 5mA100nA (ICBO)250MHz150mWSMD Поверхностный монтажSC-70, SOT-323USM
RN1302,LF
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS NPN 0.1W USM в производствеNPN - Pre-Biased100mA50V10 kOhms10 kOhms50 @ 10mA, 5V300mV @ 250µA, 5mA500nA250MHz100mWSMD Поверхностный монтажSC-70, SOT-323USM
RN1116(TE85L,F)
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS NPN 0.1W SSM в производствеNPN - Pre-Biased100mA50V4.7 kOhms10 kOhms50 @ 10mA, 5V300mV @ 250µA, 5mA500nA250MHz100mWSMD Поверхностный монтажSC-75, SOT-416SSM
RN2413TE85LF
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS PNP 0.2W SMINI в производствеPNP - Pre-Biased100mA50V47 kOhms
-
120 @ 1mA, 5V300mV @ 250µA, 5mA100nA (ICBO)200MHz200mWSMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3S-Mini
RN2412TE85LF
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS PNP 0.2W SMINI в производствеPNP - Pre-Biased100mA50V22 kOhms
-
120 @ 1mA, 5V300mV @ 250µA, 5mA100nA (ICBO)200MHz200mWSMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3S-Mini
RN1442ATE85LF
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS NPN 0.2W S-MINI устарелыйNPN - Pre-Biased300mA20V10 kOhms
-
200 @ 4mA, 2V100mV @ 3mA, 30mA100nA (ICBO)30MHz200mWSMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3S-Mini
RN1414,LF
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS NPN 0.2W S-MINI в производствеNPN - Pre-Biased100mA50V1 kOhms10 kOhms50 @ 10mA, 5V300mV @ 250µA, 5mA500nA250MHz200mWSMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3S-Mini
RN1113(T5L,F,T)
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS NPN 0.1W SSM в производствеNPN - Pre-Biased100mA50V47 kOhms
-
120 @ 1mA, 5V300mV @ 250µA, 5mA100nA (ICBO)250MHz100mWSMD Поверхностный монтажSC-75, SOT-416SSM
RN2103ACT(TPL3)
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS PNP 0.1W CST3 в производствеPNP - Pre-Biased80mA50V22 kOhms22 kOhms70 @ 10mA, 5V150mV @ 250µA, 5mA500nA
-
100mWSMD Поверхностный монтажSC-101, SOT-883CST3
RN2105ACT(TPL3)
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS PNP 0.1W CST3 в производствеPNP - Pre-Biased80mA50V2.2 kOhms47 kOhms80 @ 10mA, 5V150mV @ 250µA, 5mA500nA
-
100mWSMD Поверхностный монтажSC-101, SOT-883CST3
RN2106ACT(TPL3)
 Toshiba Semiconductor and Storage TRANSISTOR PREBIAS PNP 0.1W CST3 в производствеPNP - Pre-Biased80mA50V4.7 kOhms47 kOhms80 @ 10mA, 5V150mV @ 250µA, 5mA500nA
-
100mWSMD Поверхностный монтажSC-101, SOT-883CST3
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