номер части Производитель / Марка Краткое описание Статус деталиТип полевого транзистораФункция FETСлив к источнику напряжения (Vdss)Ток - непрерывный слив (Id) при 25 ° CRds On (Макс.) @ Id, VgsVgs (th) (Max) @ IdЗаряд затвора (Qg) (Макс.) @ VgsВходная емкость (Ciss) (Макс.) @ VdsМощность - макс.Рабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
Toshiba Semiconductor and Storage MOSFET 2N-CH 30V 4A UDFN6 в производстве2 N-Channel (Dual)Logic Level Gate, 1.8V Drive30V4A84 mOhm @ 2A, 4.5V1V @ 1mA1.8nC @ 4.5V129pF @ 15V1W150°C (TJ)SMD Поверхностный монтаж6-WDFN Exposed Pad6-UDFN (2x2)
Toshiba Semiconductor and Storage MOSFET 2N-CH 30V 4A UDFN6 в производстве2 N-Channel (Dual)Standard30V4A46 mOhm @ 2A, 4.5V1V @ 1mA4nC @ 4.5V310pF @ 10V1W150°C (TJ)SMD Поверхностный монтаж6-WDFN Exposed Pad6-µDFN(2x2)
Toshiba Semiconductor and Storage MOSFET 2P-CH 20V 4A 2-1Y1A в производстве2 P-Channel (Dual)Logic Level Gate20V4A45 mOhm @ 3.5A, 10V1.2V @ 1mA6.74nC @ 4.5V480pF @ 10V1W150°C (TJ)SMD Поверхностный монтаж6-WDFN Exposed Pad6-UDFN (2x2)
Toshiba Semiconductor and Storage MOSFET 2N-CH 20V 0.5A US6 в производстве2 N-Channel (Dual)Logic Level Gate, 1.5V Drive20V500mA630 mOhm @ 200mA, 5V1V @ 1mA1.23nC @ 4V46pF @ 10V200mW150°C (TJ)SMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
Toshiba Semiconductor and Storage MOSFET N/P-CH 20V 4A UDFN6 в производствеN and P-ChannelStandard20V4A
-
-
-
-
-
-
SMD Поверхностный монтаж6-WDFN Exposed Pad6-UDFN (2x2)
Toshiba Semiconductor and Storage MOSFET 2N-CH 20V 4A UDFN в производстве2 N-Channel (Dual)Logic Level Gate, 1.5V Drive20V4A33 mOhm @ 4A, 4.5V1V @ 1mA3.6nC @ 4.5V410pF @ 10V2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-WDFN Exposed Pad6-UDFNB (2x2)
Toshiba Semiconductor and Storage MOSFET N/P-CH 20V 0.18A/0.1A ES6 в производствеN and P-ChannelLogic Level Gate20V180mA, 100mA3 Ohm @ 50mA, 4V1V @ 1mA
-
9.5pF @ 3V150mW150°C (TJ)SMD Поверхностный монтажSOT-563, SOT-666ES6 (1.6x1.6)
Toshiba Semiconductor and Storage MOSFET 2P-CH 20V 4A 2-2Y1A в производстве2 P-Channel (Dual)Logic Level Gate20V4A95 mOhm @ 1.5A, 4.5V1V @ 1mA4.6nC @ 4.5V290pF @ 10V1W150°C (TJ)SMD Поверхностный монтаж6-WDFN Exposed Pad6-UDFN (2x2)
Toshiba Semiconductor and Storage MOSFET 2 N-CHANNEL 20V 250MA US6 в производстве2 N-Channel (Dual)Logic Level Gate, 1.5V Drive20V250mA (Ta)2.2 Ohm @ 100mA, 4.5V1V @ 1mA
-
12pF @ 10V300mW150°CSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
Toshiba Semiconductor and Storage MOSFET 2 N-CHANNEL 20V 250MA US6 в производстве2 N-Channel (Dual)Standard20V250mA (Ta)1.1 Ohm @ 150mA, 4.5V1V @ 100µA0.34nC @ 4.5V36pF @ 10V285mW (Ta)150°CSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
Toshiba Semiconductor and Storage MOSFET 2P-CH 20V 0.72A ES6 в производстве2 P-Channel (Dual)Logic Level Gate20V720mA300 mOhm @ 400mA, 4.5V1V @ 1mA1.76nC @ 4.5V110pF @ 10V150mW150°C (TJ)SMD Поверхностный монтажSOT-563, SOT-666ES6 (1.6x1.6)
Toshiba Semiconductor and Storage MOSFET 2N-CH 100V 2A 6TSOPF в производстве2 N-Channel (Dual)Logic Level Gate, 4V Drive100V2A (Ta)103 mOhm @ 2A, 10V2.5V @ 100µA3.1nC @ 4.5V290pF @ 15V1.8W (Ta)150°CSMD Поверхностный монтаж6-SMD, Flat Leads6-TSOP-F
Toshiba Semiconductor and Storage MOSFET 2P-CH 20V 0.1A ES6 в производстве2 P-Channel (Dual)Logic Level Gate20V100mA8 Ohm @ 50mA, 4V1V @ 1mA
-
12.2pF @ 3V150mW150°C (TJ)SMD Поверхностный монтажSOT-563, SOT-666ES6 (1.6x1.6)
Toshiba Semiconductor and Storage MOSFET 2N-CH 60V 0.2A ES6 в производстве2 N-Channel (Dual)Logic Level Gate60V200mA2.1 Ohm @ 500mA, 10V3.1V @ 250µA
-
17pF @ 25V150mW150°C (TJ)SMD Поверхностный монтажSOT-563, SOT-666ES6
Toshiba Semiconductor and Storage MOSFET 2N-CH 30V 0.1A 2-2J1C в производстве2 N-Channel (Dual)Logic Level Gate30V100mA3.6 Ohm @ 10mA, 4V1.5V @ 100µA
-
13.5pF @ 3V300mW150°C (TJ)SMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
Toshiba Semiconductor and Storage MOSFET 2 N-CHANNEL 20V 250MA ES6 в производстве2 N-Channel (Dual)Logic Level Gate, 1.2V Drive20V250mA (Ta)1.1 Ohm @ 150mA, 4.5V1V @ 100µA0.34nC @ 4.5V36pF @ 10V250mW150°CSMD Поверхностный монтажSOT-563, SOT-666ES6
Toshiba Semiconductor and Storage MOSFET 2P-CH 30V 0.1A ES6 в производстве2 P-Channel (Dual)Logic Level Gate30V100mA12 Ohm @ 10mA, 4V1.7V @ 100µA
-
9.1pF @ 3V150mW150°C (TJ)SMD Поверхностный монтажSOT-563, SOT-666ES6 (1.6x1.6)
Toshiba Semiconductor and Storage MOSFET 2N-CH 20V 0.1A US6 в производстве2 N-Channel (Dual)Standard20V100mA3 Ohm @ 10mA, 4V1.1V @ 100µA
-
9.3pF @ 3V200mW150°C (TJ)SMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
Toshiba Semiconductor and Storage MOSFET N/P-CH 20V 0.18A/0.1A US6 в производствеN and P-ChannelLogic Level Gate, 1.2V Drive20V180mA, 100mA3 Ohm @ 50mA, 4V1V @ 1mA
-
9.5pF @ 3V200mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
Toshiba Semiconductor and Storage MOSFET 2N-CH 30V 0.1A ES6 в производстве2 N-Channel (Dual)Logic Level Gate30V100mA4 Ohm @ 10mA, 4V1.5V @ 100µA
-
8.5pF @ 3V150mW150°C (TJ)SMD Поверхностный монтажSOT-563, SOT-666ES6 (1.6x1.6)
Toshiba Semiconductor and Storage MOSFET 2N-CH 60V 0.3A в производстве2 N-Channel (Dual)Standard60V300mA1.5 Ohm @ 100mA, 10V2.1V @ 250µA0.6nC @ 4.5V40pF @ 10V285mW150°C (TJ)SMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
Toshiba Semiconductor and Storage MOSFET 2N-CH 60V 0.17A US6 в производстве2 N-Channel (Dual)Standard60V170mA3.9 Ohm @ 100mA, 10V2.1V @ 250µA0.35nC @ 4.5V17pF @ 10V285mW150°C (TJ)SMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
Toshiba Semiconductor and Storage MOSFET 2N-CH 20V 0.18A ES6 в производстве2 N-Channel (Dual)Logic Level Gate20V180mA3 Ohm @ 50mA, 4V1V @ 1mA
-
9.5pF @ 3V150mW150°C (TJ)SMD Поверхностный монтажSOT-563, SOT-666ES6 (1.6x1.6)
Toshiba Semiconductor and Storage MOSFET N/P-CH 20V 0.5A/0.33A ES6 в производствеN and P-ChannelLogic Level Gate20V500mA, 330mA630 mOhm @ 200mA, 5V1V @ 1mA1.23nC @ 4V46pF @ 10V150mW150°C (TJ)SMD Поверхностный монтажSOT-563, SOT-666ES6 (1.6x1.6)
Toshiba Semiconductor and Storage MOSFET 2N-CH 20V 0.8A в производстве2 N-Channel (Dual)Logic Level Gate, 1.5V Drive20V800mA235 mOhm @ 800mA, 4.5V1V @ 1mA1nC @ 4.5V55pF @ 10V150mW150°C (TJ)SMD Поверхностный монтажSOT-563, SOT-666ES6
Toshiba Semiconductor and Storage MOSFET N/P-CH 30V 0.4A/0.2A US6 в производствеN and P-ChannelLogic Level Gate30V400mA, 200mA700 mOhm @ 200MA, 10V1.8V @ 100µA
-
20pF @ 5V300mW150°C (TJ)SMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
Toshiba Semiconductor and Storage SMALL LOW RON DUAL NCH MOSFETS H в производстве2 N-Channel (Dual)Logic Level Gate, 1.8V Drive30V4A (Ta)84 mOhm @ 2A, 4.5V1V @ 1mA1.8nC @ 4.5V129pF @ 15V2W (Ta)150°CSMD Поверхностный монтаж6-WDFN Exposed Pad6-UDFN (2x2)
Toshiba Semiconductor and Storage SMALL LOW RON DUAL NCH MOSFETS I в производстве2 N-Channel (Dual)Logic Level Gate, 1.8V Drive30V4A (Ta)39.1 mOhm @ 2A, 4.5V1V @ 1mA3.2nC @ 4.5V310pF @ 15V2W (Ta)150°CSMD Поверхностный монтаж6-WDFN Exposed Pad6-UDFN (2x2)
Toshiba Semiconductor and Storage SMALL LOW R-ON MOSFETS DUAL NCH в производстве2 N-Channel (Dual)Standard60V650mA (Ta)1.8 Ohm @ 150mA, 5V2V @ 1mA1.5nC @ 5V60pF @ 12V1.5W (Ta)150°CSMD Поверхностный монтаж6-SMD, Flat Leads6-TSOP-F
Toshiba Semiconductor and Storage MOSFET 2N-CH 30V 0.1A ES6 в производстве2 N-Channel (Dual)Logic Level Gate30V100mA4 Ohm @ 10mA, 4V1.5V @ 100µA
-
7.8pF @ 3V150mW150°C (TJ)SMD Поверхностный монтажSOT-563, SOT-666ES6 (1.6x1.6)
Toshiba Semiconductor and Storage MOSFET 2N-CH 20V 0.25A 2-2N1D в производстве2 N-Channel (Dual)Logic Level Gate20V250mA2.2 Ohm @ 100mA, 4.5V1V @ 1mA
-
12pF @ 10V150mW150°C (TJ)SMD Поверхностный монтажSOT-563, SOT-666ES6
Toshiba Semiconductor and Storage MOSFET 2N-CH 20V 0.5A ES6 в производстве2 N-Channel (Dual)Logic Level Gate20V500mA630 mOhm @ 200mA, 5V1V @ 1mA1.23nC @ 4V46pF @ 10V150mW150°C (TJ)SMD Поверхностный монтажSOT-563, SOT-666ES6 (1.6x1.6)
Toshiba Semiconductor and Storage MOSFET 2P-CH 20V 0.33A ES6 в производстве2 P-Channel (Dual)Logic Level Gate20V330mA1.31 Ohm @ 100mA, 4.5V1V @ 1mA1.2nC @ 4V43pF @ 10V150mW150°C (TJ)SMD Поверхностный монтажSOT-563, SOT-666ES6 (1.6x1.6)
Toshiba Semiconductor and Storage X34 PB-F SOT-363 S-MOS LF TRAN в производстве2 N-Channel (Dual)Standard30V100mA (Ta)3.2 Ohm @ 10mA, 4V1.5V @ 100µA
-
15.1pF @ 3V300mW150°CSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
Toshiba Semiconductor and Storage MOSFET N/P-CH 20V 0.18A/0.1A ES6 устарелыйN and P-ChannelStandard20V100mA3 Ohm @ 10mA, 4V1.1V @ 0.1mA
-
9.3pF @ 3V150mW150°C (TA)SMD Поверхностный монтажSOT-563, SOT-666ES6 (1.6x1.6)
Toshiba Semiconductor and Storage MOSFET 2N-CH 30V 4A UDFN6 в производстве2 N-Channel (Dual)Logic Level Gate30V4A46 mOhm @ 4A, 10V2.5V @ 100µA2.5nC @ 4.5V280pF @ 15V1W150°C (TJ)SMD Поверхностный монтаж6-WDFN Exposed Pad6-µDFN(2x2)
Toshiba Semiconductor and Storage MOSFET N/P-CH 30V 500MA UF6 в производствеN and P-ChannelStandard30V500mA (Ta)145 mOhm @ 500mA, 4.5V, 260 mOhm @ 250mA, 4V1.1V @ 100µA
-
245pF @ 10V, 218pF @ 10V500mW150°CSMD Поверхностный монтаж6-SMD, Flat LeadsUF6
Toshiba Semiconductor and Storage MOSFET N/P-CH 20V 0.8A UF6 в производствеN and P-ChannelLogic Level Gate, 1.8V Drive20V800mA143 mOhm @ 600MA, 4V1V @ 1mA
-
268pF @ 10V500mW150°C (TJ)SMD Поверхностный монтаж6-SMD, Flat LeadsUF6
Toshiba Semiconductor and Storage MOSFET 2 N-CHANNEL 20V 1.6A UF6 в производстве2 N-Channel (Dual)Standard20V1.6A (Ta)119 mOhm @ 1A, 4V1V @ 1mA7.5nC @ 4V260pF @ 10V500mW150°CSMD Поверхностный монтаж6-SMD, Flat LeadsUF6
Toshiba Semiconductor and Storage MOSFET 2N-CH 30V 9A 8SOP в производстве2 N-Channel (Dual)Logic Level Gate30V9A17 mOhm @ 4.5A, 10V2.3V @ 100µA17nC @ 10V1190pF @ 10V450mW150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
Toshiba Semiconductor and Storage MOSFET N/P-CH 30V 9A/7.4A 8SOP в производствеN and P-ChannelLogic Level Gate30V9A, 7.4A17 mOhm @ 4.5A, 10V2.3V @ 100µA17nC @ 10V1190pF @ 10V450mW150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
Toshiba Semiconductor and Storage MOSFET N/P-CH 40V 6.1A/5.3A 8SOP в производствеN and P-ChannelLogic Level Gate40V6.1A, 5.3A32 mOhm @ 3.1A, 10V2.3V @ 100µA24nC @ 10V850pF @ 10V450mW150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
Toshiba Semiconductor and Storage MOSFET 2N-CH 20V 6A 8-SOP Discontinued at -2 N-Channel (Dual)Logic Level Gate20V6A20 mOhm @ 4.8A, 4V1.2V @ 200µA22nC @ 5V2010pF @ 10V450mW150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.173", 4.40mm Width)8-SOP (5.5x6.0)
Toshiba Semiconductor and Storage MOSFET 2N-CH 20V 5A 8-SOP Discontinued at -2 N-Channel (Dual)Logic Level Gate20V5A50 mOhm @ 2.5A, 4V1.2V @ 200µA9.5nC @ 5V780pF @ 10V450mW150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.173", 4.40mm Width)8-SOP (5.5x6.0)
Toshiba Semiconductor and Storage MOSFET 2N-CH 20V 6A 8-SOP устарелый2 N-Channel (Dual)Logic Level Gate20V6A20 mOhm @ 4.8A, 4V1.2V @ 200µA22nC @ 5V2010pF @ 10V450mW150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.173", 4.40mm Width)8-SOP (5.5x6.0)
Toshiba Semiconductor and Storage MOSFET 2N-CH 20V 3A VS-8 устарелый2 N-Channel (Dual)Logic Level Gate20V3A49 mOhm @ 1.5A, 4.5V1.2V @ 200µA7.5nC @ 5V590pF @ 10V330mW150°C (TJ)SMD Поверхностный монтаж8-SMD, Flat LeadVS-8 (2.9x1.5)
Toshiba Semiconductor and Storage MOSFET N/P-CH 30V 4A/3.2A VS-8 устарелыйN and P-ChannelLogic Level Gate30V4A, 3.2A50 mOhm @ 2A, 10V2V @ 1mA10nC @ 10V470pF @ 10V330mW150°C (TJ)SMD Поверхностный монтаж8-SMD, Flat LeadVS-8 (2.9x1.5)
Toshiba Semiconductor and Storage MOSFET 2N-CH 20V 5A SOP8 устарелый2 N-Channel (Dual)Logic Level Gate20V5A50 mOhm @ 2.5A, 4V1.2V @ 200µA9.5nC @ 5V780pF @ 10V450mW150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.173", 4.40mm Width)8-SOP (5.5x6.0)
Toshiba Semiconductor and Storage MOSFET N/P-CH 30V 6A/4.5A 8SOP устарелыйN and P-ChannelLogic Level Gate30V6A, 4.5A26 mOhm @ 3A, 10V2V @ 1mA27nC @ 10V1240pF @ 10V450mW150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.173", 4.40mm Width)8-SOP (5.5x6.0)
Toshiba Semiconductor and Storage MOSFET 2P-CH 30V 3.2A VS-8 устарелый2 P-Channel (Dual)Logic Level Gate30V3.2A72 mOhm @ 1.6A, 10V1.2V @ 1mA14nC @ 10V600pF @ 10V330mW150°C (TJ)SMD Поверхностный монтаж8-SMD, Flat LeadVS-8 (2.9x1.5)
  1. 1
  2. 2