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Производители для Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Alpha and Omega Semiconductor, Inc.
Central Semiconductor
Comchip Technology
Diodes Incorporated
EPC
Exar Corporation
GeneSiC Semiconductor
Global Power Technologies Group, Inc.
Honeywell Aerospace
Infineon Technologies
Intersil (Renesas Electronics America)
IXYS Corporation
IXYS Integrated Circuits Division
IXYS RF/Littelfuse
Littelfuse
Micro Commercial Components (MCC)
Microchip Technology
Microsemi
Nexperia
NXP Semiconductors
ON Semiconductor
Panasonic
Renesas Electronics America
ROHM Semiconductor
Sanken Electric Co., Ltd.
STMicroelectronics
Taiwan Semiconductor
Texas Instruments
Torex Semiconductor
Toshiba Semiconductor and Storage
Transphorm
TT Electronics/Optek Technology
Vicor
Vishay
Wolfspeed
номер части Производитель / Марка Краткое описание Статус деталиТип полевого транзистораТехнологииСлив к источнику напряжения (Vdss)Ток - непрерывный слив (Id) при 25 ° CDrive Voltage (Max Rds On, Min Rds On)Rds On (Макс.) @ Id, VgsVgs (th) (Max) @ IdЗаряд затвора (Qg) (Макс.) @ VgsVgs (Макс.)Входная емкость (Ciss) (Макс.) @ VdsФункция FETРассеиваемая мощность (макс.)Рабочая ТемператураТип монтажаПакет устройств поставщикаУпаковка / чехол
SSM3J56MFV,L3F
 Toshiba Semiconductor and Storage MOSFET P-CH 20V 0.8A VESM в производствеP-ChannelMOSFET (Metal Oxide)20V800mA (Ta)1.2V, 4.5V390 mOhm @ 800mA, 4.5V
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±8V100pF @ 10V
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150mW (Ta)150°C (TJ)SMD Поверхностный монтажVESMSOT-723
SSM3K339R,LF
 Toshiba Semiconductor and Storage MOSFET N-CH 40V 2A SOT-23F в производствеN-ChannelMOSFET (Metal Oxide)40V2A (Ta)1.8V, 8V185 mOhm @ 1A, 8V1.2V @ 1mA1.1nC @ 4.2V±12V130pF @ 10V
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1W (Ta)150°C (TJ)SMD Поверхностный монтажSOT-23FSOT-23-3 Flat Leads
SSM3J356R,LF
 Toshiba Semiconductor and Storage MOSFET P-CH 60V 2A SOT-23F в производствеP-ChannelMOSFET (Metal Oxide)60V2A (Ta)4V, 10V300 mOhm @ 1A, 10V2V @ 1mA8.3nC @ 10V+10V, -20V330pF @ 10V
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1W (Ta)150°C (TJ)SMD Поверхностный монтажSOT-23FSOT-23-3 Flat Leads
SSM3K329R,LF
 Toshiba Semiconductor and Storage MOSFET N CH 30V 3.5A 2-3Z1A в производствеN-ChannelMOSFET (Metal Oxide)30V3.5A (Ta)1.8V, 4V126 mOhm @ 1A, 4V1V @ 1mA1.5nC @ 4V±12V123pF @ 15V
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1W (Ta)150°C (TJ)SMD Поверхностный монтажSOT-23FSOT-23-3 Flat Leads
SSM3K2615R,LF
 Toshiba Semiconductor and Storage MOSFET N-CH 60V 2A SOT23 в производствеN-ChannelMOSFET (Metal Oxide)60V2A (Ta)3.3V, 10V300 mOhm @ 1A, 10V2V @ 1mA
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±20V150pF @ 10V
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1W (Ta)150°C (TJ)SMD Поверхностный монтажSOT-23FSOT-23-3 Flat Leads
SSM6J507NU,LF
 Toshiba Semiconductor and Storage MOSFET P-CH 30V 10A 6UDFN в производствеP-ChannelMOSFET (Metal Oxide)30V10A (Ta)4V, 10V20 mOhm @ 4A, 10V2.2V @ 250µA20.4nC @ 4.5V+20V, -25V1150pF @ 15V
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1.25W (Ta)150°C (TJ)SMD Поверхностный монтаж6-UDFNB (2x2)6-WDFN Exposed Pad
SSM3J130TU,LF
 Toshiba Semiconductor and Storage MOSFET P-CH 20V 4.4A UFM в производствеP-ChannelMOSFET (Metal Oxide)20V4.4A (Ta)1.5V, 4.5V25.8 mOhm @ 4A, 4.5V1V @ 1mA24.8nC @ 4.5V±8V1800pF @ 10V
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500mW (Ta)150°C (TJ)SMD Поверхностный монтажUFM3-SMD, Flat Leads
TPN3R704PL,L1Q
 Toshiba Semiconductor and Storage MOSFET N-CH 40V 80A TSON в производствеN-ChannelMOSFET (Metal Oxide)40V80A (Tc)4.5V, 10V3.7 mOhm @ 40A, 10V2.4V @ 0.2mA27nC @ 10V±20V2500pF @ 20V
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630mW (Ta), 86W (Tc)175°CSMD Поверхностный монтаж8-TSON Advance (3.3x3.3)8-PowerVDFN
TPN2R304PL,L1Q
 Toshiba Semiconductor and Storage MOSFET N-CH 40V 80A TSON в производствеN-ChannelMOSFET (Metal Oxide)40V80A (Tc)4.5V, 10V2.3 mOhm @ 40A, 10V2.4V @ 0.3mA41nC @ 10V±20V3600pF @ 20V
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630mW (Ta), 104W (Tc)175°CSMD Поверхностный монтаж8-TSON Advance (3.3x3.3)8-PowerVDFN
TPH5900CNH,L1Q
 Toshiba Semiconductor and Storage MOSFET N-CH 150V 9A 8SOP в производствеN-ChannelMOSFET (Metal Oxide)150V9A (Ta)10V59 mOhm @ 4.5A, 10V4V @ 200µA7nC @ 10V±20V600pF @ 75V
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1.6W (Ta), 42W (Tc)150°C (TJ)SMD Поверхностный монтаж8-SOP Advance (5x5)8-PowerVDFN
TPH1R204PL,L1Q
 Toshiba Semiconductor and Storage MOSFET N-CH 40V 150A в производствеN-ChannelMOSFET (Metal Oxide)40V150A (Tc)4.5V, 10V1.24 mOhm @ 50A, 10V2.4V @ 500µA74nC @ 10V±20V7200pF @ 20V
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960mW (Ta), 132W (Tc)175°C (TJ)SMD Поверхностный монтаж8-SOP Advance (5x5)8-PowerVDFN
TPH2R608NH,L1Q
 Toshiba Semiconductor and Storage MOSFET N-CH 75V 150A SOP8 в производствеN-ChannelMOSFET (Metal Oxide)75V150A (Tc)10V2.6 mOhm @ 50A, 10V4V @ 1mA72nC @ 10V±20V6000pF @ 37.5V
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142W (Tc)150°C (TJ)SMD Поверхностный монтаж8-SOP Advance (5x5)8-PowerVDFN
TPH6400ENH,L1Q
 Toshiba Semiconductor and Storage MOSFET N-CH 200V 21A 8-SOP в производствеN-ChannelMOSFET (Metal Oxide)200V13A (Ta)10V64 mOhm @ 6.5A, 10V4V @ 300µA11.2nC @ 10V±20V1100pF @ 100V
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1.6W (Ta), 57W (Tc)150°C (TJ)SMD Поверхностный монтаж8-SOP Advance (5x5)8-PowerVDFN
TPW4R50ANH,L1Q
 Toshiba Semiconductor and Storage MOSFET N-CH 100V 92A 8DSOP в производствеN-ChannelMOSFET (Metal Oxide)100V92A (Tc)10V4.5 mOhm @ 46A, 10V4V @ 1mA58nC @ 10V±20V5200pF @ 50V
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800mW (Ta), 142W (Tc)150°C (TJ)SMD Поверхностный монтаж8-DSOP Advance8-PowerVDFN
TPW4R008NH,L1Q
 Toshiba Semiconductor and Storage MOSFET N-CH 80V 116A 8DSOP в производствеN-ChannelMOSFET (Metal Oxide)80V116A (Tc)10V4 mOhm @ 50A, 10V4V @ 1mA59nC @ 10V±20V5300pF @ 40V
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800mW (Ta), 142W (Tc)150°C (TJ)SMD Поверхностный монтаж8-DSOP Advance8-PowerVDFN
TPH2R506PL,L1Q
 Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR в производствеN-ChannelMOSFET (Metal Oxide)60V100A (Tc)4.5V, 10V4.4 mOhm @ 30A, 4.5V2.5V @ 500µA60nC @ 10V±20V5435pF @ 30V
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132W (Tc)175°C (TJ)SMD Поверхностный монтаж8-SOP Advance (5x5)8-PowerVDFN
TPHR8504PL,L1Q
 Toshiba Semiconductor and Storage MOSFET N-CH 40V 150A 8SOP в производствеN-ChannelMOSFET (Metal Oxide)40V150A (Tc)4.5V, 10V0.85 mOhm @ 50A, 10V2.4V @ 1mA103nC @ 10V±20V9600pF @ 20V
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1W (Ta), 170W (Tc)175°C (TJ)SMD Поверхностный монтаж8-SOP Advance (5x5)8-PowerVDFN
TPH4R008NH,L1Q
 Toshiba Semiconductor and Storage MOSFET N CH 80V 60A SOP ADV в производствеN-ChannelMOSFET (Metal Oxide)80V60A (Tc)10V4 mOhm @ 30A, 10V4V @ 1mA59nC @ 10V±20V5300pF @ 40V
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1.6W (Ta), 78W (Tc)150°C (TJ)SMD Поверхностный монтаж8-SOP Advance (5x5)8-PowerVDFN
TK31V60X,LQ
 Toshiba Semiconductor and Storage MOSFET N-CH 600V 30.8A 5DFN в производствеN-ChannelMOSFET (Metal Oxide)600V30.8A (Ta)10V98 mOhm @ 9.4A, 10V3.5V @ 1.5mA65nC @ 10V±30V3000pF @ 300VSuper Junction240W (Tc)150°C (TJ)SMD Поверхностный монтаж4-DFN-EP (8x8)4-VSFN Exposed Pad
TK62N60X,S1F
 Toshiba Semiconductor and Storage MOSFET N-CH 600V 61.8A TO-247 в производствеN-ChannelMOSFET (Metal Oxide)600V61.8A (Ta)10V40 mOhm @ 21A, 10V3.5V @ 3.1mA135nC @ 10V±30V6500pF @ 300VSuper Junction400W (Tc)150°C (TJ)Through HoleTO-247TO-247-3
T2N7002AK,LM
 Toshiba Semiconductor and Storage MOSFET N-CH 60V 0.2A в производствеN-ChannelMOSFET (Metal Oxide)60V200mA (Ta)4.5V, 10V3.9 Ohm @ 100mA, 10V2.1V @ 250µA0.35nC @ 4.5V±20V17pF @ 10V
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320mW (Ta)150°C (TJ)SMD Поверхностный монтажSOT-23TO-236-3, SC-59, SOT-23-3
SSM3K35AMFV,L3F
 Toshiba Semiconductor and Storage SMALL LOW ON RESISTANCE MOSFET в производствеN-ChannelMOSFET (Metal Oxide)20V250mA (Ta)1.2V, 4.5V1.1 Ohm @ 150mA, 4.5V1V @ 100µA0.34nC @ 4.5V±10V36pF @ 10V
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500mW (Ta)150°C (TJ)SMD Поверхностный монтажVESMSOT-723
SSM3K35CTC,L3F
 Toshiba Semiconductor and Storage MOSFET N-CH 20V 0.18A в производствеN-ChannelMOSFET (Metal Oxide)20V250mA (Ta)1.2V, 4.5V1.1 Ohm @ 150mA, 4.5V1V @ 100µA0.34nC @ 4.5V±10V36pF @ 10V
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500mW (Ta)150°C (TJ)SMD Поверхностный монтажCST3CSC-101, SOT-883
SSM3K37FS,LF
 Toshiba Semiconductor and Storage MOSFET NCH 20V 200MA SSM в производствеN-ChannelMOSFET (Metal Oxide)20V200mA (Ta)1.5V, 4.5V2.2 Ohm @ 100mA, 4.5V1V @ 1mA
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±10V12pF @ 10V
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100mW (Ta)150°C (TA)SMD Поверхностный монтажSSMSC-75, SOT-416
SSM3J15FU,LF
 Toshiba Semiconductor and Storage MOSFET P-CH 30V 0.1A USM в производствеP-ChannelMOSFET (Metal Oxide)30V100mA (Ta)2.5V, 4V12 Ohm @ 10mA, 4V1.7V @ 100µA
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±20V9.1pF @ 3V
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150mW (Ta)-55°C ~ 150°C (TJ)SMD Поверхностный монтажUSMSC-70, SOT-323
SSM3K15AMFV,L3F
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 0.1A U-MOS III в производствеN-ChannelMOSFET (Metal Oxide)30V100mA (Ta)2.5V, 4V3.6 Ohm @ 10mA, 4V1.5V @ 100µA
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±20V13.5pF @ 3V
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150mW (Ta)150°C (TJ)SMD Поверхностный монтажVESMSOT-723
SSM3K37MFV,L3F
 Toshiba Semiconductor and Storage MOSFET N-CH 20V 0.25A VESM в производствеN-ChannelMOSFET (Metal Oxide)20V250mA (Ta)1.5V, 4.5V2.2 Ohm @ 100mA, 4.5V1V @ 1mA
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±10V12pF @ 10V
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150mW (Ta)150°C (TJ)SMD Поверхностный монтажVESMSOT-723
SSM3K15ACT,L3F
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 0.1A CST3 в производствеN-ChannelMOSFET (Metal Oxide)30V100mA (Ta)2.5V, 4V3.6 Ohm @ 10mA, 4V1.5V @ 100µA
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±20V13.5pF @ 3V
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100mW (Ta)150°C (TJ)SMD Поверхностный монтажCST3SC-101, SOT-883
SSM3K15AFS,LF
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 0.1A SSM в производствеN-ChannelMOSFET (Metal Oxide)30V100mA (Ta)2.5V, 4V3.6 Ohm @ 10mA, 4V1.5V @ 100µA
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±20V13.5pF @ 3V
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100mW (Ta)150°C (TJ)SMD Поверхностный монтажSSMSC-75, SOT-416
SSM3J36FS,LF
 Toshiba Semiconductor and Storage MOSFET P-CH 20V 0.33A SSM в производствеP-ChannelMOSFET (Metal Oxide)20V330mA (Ta)1.5V, 4.5V1.31 Ohm @ 100mA, 4.5V1V @ 1mA1.2nC @ 4V±8V43pF @ 10V
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150mW (Ta)150°C (TJ)SMD Поверхностный монтажSSMSC-75, SOT-416
SSM3K16FU,LF
 Toshiba Semiconductor and Storage MOSFET N-CH 20V 0.1A USM в производствеN-ChannelMOSFET (Metal Oxide)20V100mA (Ta)1.5V, 4V3 Ohm @ 10mA, 4V1.1V @ 100µA
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±10V9.3pF @ 3V
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150mW (Ta)-55°C ~ 150°C (TJ)SMD Поверхностный монтажUSMSC-70, SOT-323
SSM3K17FU,LF
 Toshiba Semiconductor and Storage MOSFET N-CH 50V 0.1A USM в производствеN-ChannelMOSFET (Metal Oxide)50V100mA (Ta)2.5V, 4V20 Ohm @ 10mA, 4V1.5V @ 1µA
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±7V7pF @ 3V
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150mW (Ta)150°C (TJ)SMD Поверхностный монтажUSMSC-70, SOT-323
SSM3K56FS,LF
 Toshiba Semiconductor and Storage MOSFET N-CH 20V 0.8A SSM в производствеN-ChannelMOSFET (Metal Oxide)20V800mA (Ta)1.5V, 4.5V235 mOhm @ 800mA, 4.5V1V @ 1mA1nC @ 4.5V±8V55pF @ 10V
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150mW (Ta)150°C (TJ)SMD Поверхностный монтажSSMSC-75, SOT-416
SSM3J56ACT,L3F
 Toshiba Semiconductor and Storage MOSFET P-CH 20V 1.4A CST3 в производствеP-ChannelMOSFET (Metal Oxide)20V1.4A (Ta)1.2V, 4.5V390 mOhm @ 800mA, 4.5V1V @ 1mA1.6nC @ 4.5V±8V100pF @ 10V
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500mW (Ta)150°CSMD Поверхностный монтажCST3SC-101, SOT-883
SSM3K56MFV,L3F
 Toshiba Semiconductor and Storage MOSFET N-CH 20V 0.8A VESM в производствеN-ChannelMOSFET (Metal Oxide)20V800mA (Ta)1.5V, 4.5V235 mOhm @ 800mA, 4.5V1V @ 1mA1nC @ 4.5V±8V55pF @ 10V
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150mW (Ta)150°C (TJ)SMD Поверхностный монтажVESMSOT-723
SSM3K324R,LF
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 4A SOT-23F в производствеN-ChannelMOSFET (Metal Oxide)30V4A (Ta)1.8V, 4.5V55 mOhm @ 4A, 4.5V
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±12V190pF @ 30V
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1W (Ta)150°C (TJ)SMD Поверхностный монтажSOT-23FSOT-23-3 Flat Leads
SSM3J334R,LF
 Toshiba Semiconductor and Storage MOSFET P CH 30V 4A SOT-23F в производствеP-ChannelMOSFET (Metal Oxide)30V4A (Ta)4V, 10V71 mOhm @ 3A, 10V2V @ 100µA5.9nC @ 10V±20V280pF @ 15V
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1W (Ta)150°C (TJ)SMD Поверхностный монтажSOT-23FSOT-23-3 Flat Leads
SSM3K345R,LF
 Toshiba Semiconductor and Storage MOSFET N-CHANNEL 20V 4A SOT23F в производствеN-ChannelMOSFET (Metal Oxide)20V4A (Ta)1.5V, 4.5V33 mOhm @ 4A, 4.5V1V @ 1mA3.6nC @ 4.5V±8V410pF @ 10V
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1W (Ta)150°C (TJ)SMD Поверхностный монтажSOT-23FSOT-23-3 Flat Leads
SSM3K344R,LF
 Toshiba Semiconductor and Storage SMALL LOW ON RESISTANCE MOSFET в производствеN-ChannelMOSFET (Metal Oxide)20V3A (Ta)1.5V, 4.5V71 mOhm @ 3A, 4.5V1V @ 1mA2nC @ 4V±8V153pF @ 10V
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1W (Ta)150°C (TJ)SMD Поверхностный монтажSOT-23FSOT-23-3 Flat Leads
SSM3K333R,LF
 Toshiba Semiconductor and Storage MOSFET N CH 30V 6A 2-3Z1A в производствеN-ChannelMOSFET (Metal Oxide)30V6A (Ta)4.5V, 10V28 mOhm @ 5A, 10V2.5V @ 100µA3.4nC @ 4.5V±20V436pF @ 15V
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1W (Ta)150°C (TJ)SMD Поверхностный монтажSOT-23FSOT-23-3 Flat Leads
SSM3J46CTB(TPL3)
 Toshiba Semiconductor and Storage MOSFET P-CH 20V 2A CST3B в производствеP-ChannelMOSFET (Metal Oxide)20V2A (Ta)1.5V, 4.5V103 mOhm @ 1.5A, 4.5V1V @ 1mA4.7nC @ 4.5V±8V290pF @ 10V
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150°C (TJ)SMD Поверхностный монтажCST3B3-SMD, No Lead
SSM3J351R,LF
 Toshiba Semiconductor and Storage MOSFET P-CH 60V 3.5A SOT-23F в производствеP-ChannelMOSFET (Metal Oxide)60V3.5A (Ta)4V, 10V134 mOhm @ 1A, 10V2V @ 1mA15.1nC @ 10V+10V, -20V660pF @ 10V
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2W (Ta)150°CSMD Поверхностный монтажSOT-23FSOT-23-3 Flat Leads
SSM3J133TU,LF
 Toshiba Semiconductor and Storage MOSFET P-CH 20V 5.5A в производствеP-ChannelMOSFET (Metal Oxide)20V5.5A (Ta)1.5V, 4.5V29.8 mOhm @ 3A, 4.5V1V @ 1mA12.8nC @ 4.5V±8V840pF @ 10V
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500mW (Ta)150°C (TJ)SMD Поверхностный монтажUFM3-SMD, Flat Leads
SSM3K123TU,LF
 Toshiba Semiconductor and Storage MOSFET N-CH 20V 4.2A UFM в производствеN-ChannelMOSFET (Metal Oxide)20V4.2A (Ta)1.5V, 4V28 mOhm @ 3A, 4V1V @ 1mA13.6nC @ 4V±10V1010pF @ 10V
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500mW (Ta)150°C (TJ)SMD Поверхностный монтажUFM3-SMD, Flat Leads
SSM6J501NU,LF
 Toshiba Semiconductor and Storage MOSFET P-CH 20V 10A UDFN6B в производствеP-ChannelMOSFET (Metal Oxide)20V10A (Ta)1.5V, 4.5V15.3 mOhm @ 4A, 4.5V1V @ 1mA29.9nC @ 4.5V±8V2600pF @ 10V
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1W (Ta)150°C (TJ)SMD Поверхностный монтаж6-UDFNB (2x2)6-WDFN Exposed Pad
SSM6J511NU,LF
 Toshiba Semiconductor and Storage MOSFET P-CH 12V 14A UDFN6B в производствеP-ChannelMOSFET (Metal Oxide)12V14A (Ta)
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9.1 mOhm @ 4A, 8V1V @ 1mA47nC @ 4.5V
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3350pF @ 6V
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-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-UDFNB (2x2)6-WDFN Exposed Pad
SSM3K341R,LF
 Toshiba Semiconductor and Storage MOSFET N-CH 60V 6A SOT-23F в производствеN-ChannelMOSFET (Metal Oxide)60V6A (Ta)4V, 10V36 mOhm @ 5A, 10V2.5V @ 100µA9.3nC @ 10V±20V550pF @ 10V
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1.2W (Ta)-55°C ~ 175°C (TJ)SMD Поверхностный монтажSOT-23FSOT-23-3 Flat Leads
SSM3K337R,LF
 Toshiba Semiconductor and Storage MOSFET N-CH 38V 2A в производствеN-ChannelMOSFET (Metal Oxide)38V2A (Ta)4V, 10V150 mOhm @ 2A, 10V1.7V @ 1mA3nC @ 10V±20V120pF @ 10V
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1W (Ta)150°C (TJ)SMD Поверхностный монтажSOT-23FSOT-23-3 Flat Leads
SSM6J505NU,LF
 Toshiba Semiconductor and Storage MOSFET P CH 12V 12A UDFN6B в производствеP-ChannelMOSFET (Metal Oxide)12V12A (Ta)1.2V, 4.5V12 mOhm @ 4A, 4.5V1V @ 1mA37.6nC @ 4.5V±6V2700pF @ 10V
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1.25W (Ta)150°C (TJ)SMD Поверхностный монтаж6-UDFNB (2x2)6-WDFN Exposed Pad
SSM6K781G,LF
 Toshiba Semiconductor and Storage MOSFET N-CH 12V 7A 6WCSP6C в производствеN-ChannelMOSFET (Metal Oxide)12V7A (Ta)1.5V, 4.5V18 mOhm @ 1.5A, 4.5V1V @ 250µA5.4nC @ 4.5V±8V600pF @ 6V
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1.6W (Ta)150°C (TJ)SMD Поверхностный монтаж6-WCSPC (1.5x1.0)6-UFBGA, WLCSP
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