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Vishay Semiconductor Diodes Division |
IGBT 600V 114A 658W MTP |
в производстве | - | Half Bridge | 600V | 114A | 658W | 3.2V @ 15V, 100A | 400µA | 7.1nF @ 30V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | 12-MTP Module | MTP |
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Vishay Semiconductor Diodes Division |
IGBT 600V 400A SOT227 |
в производстве | - | Single | 600V | 400A | 961W | 1.66V @ 15V, 200A | 1mA | 16.25nF @ 30V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4 | SOT-227 |
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Vishay Semiconductor Diodes Division |
IGBT SIP MODULE 600V 13A IMS-2 |
в производстве | - | Three Phase Inverter | 600V | 24A | 63W | 1.8V @ 15V, 24A | 250µA | 1.6nF @ 30V | Standard | No | -55°C ~ 150°C (TJ) | Through Hole | 19-SIP (13 Leads), IMS-2 | IMS-2 |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 80A 463W MTP |
в производстве | NPT | Half Bridge | 1200V | 80A | 463W | 4.91V @ 15V, 80A | 250µA | 8.28nF @ 30V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | 12-MTP Module | MTP |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 288A 1087W SOT-227 |
устарелый | Trench | Single | 1200V | 288A | 1087W | 2.1V @ 15V, 100A | 100µA | - | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
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Vishay Semiconductor Diodes Division |
IGBT 600V 200A 500W SOT-227 |
в производстве | - | Single | 600V | 200A | 500W | 1.9V @ 15V, 100A | 1mA | 16.5nF @ 30V | Standard | No | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
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Vishay Semiconductor Diodes Division |
MOD IGBT 3PHASE INV 600V SIP |
в производстве | - | - | 600V | 27A | 63W | 1.5V @ 15V, 15A | 250µA | 2.2nF @ 30V | Standard | No | -40°C ~ 150°C (TJ) | Through Hole | 19-SIP (13 Leads), IMS-2 | IMS-2 |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 149A 862W SOT-227 |
в производстве | NPT | Single | 1200V | 149A | 862W | 3.8V @ 15V, 75A | 250µA | - | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
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Vishay Semiconductor Diodes Division |
IGBT 600V 380A 893W SOT-227 |
в производстве | PT, Trench | Single | 600V | 380A | 893W | 1.3V @ 15V, 100A | 100µA | - | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
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Vishay Semiconductor Diodes Division |
TRANSISTOR INSLTED GATE BIPOLAR |
в производстве | NPT | Single | 1200V | 149A | 862W | 3.9V @ 15V, 75A | 250µA | - | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4 | SOT-227 |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 22A 89W EMIPAK-2B |
в производстве | Trench | - | 1200V | 22A | 89W | 3.03V @ 15V, 15A | 75µA | 1.07nF @ 30V | Standard | Yes | 150°C (TJ) | Chassis Mount | EMIPAK-2B | EMIPAK-2B |
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Vishay Semiconductor Diodes Division |
IGBT 650V 150A EMIPAK-2B |
в производстве | Trench | Three Level Inverter | 650V | 142A | 417W | 2.06V @ 15V, 100A | 100µA | 6.6nF @ 30V | Standard | No | 175°C (TJ) | Chassis Mount | EMIPAK-2B | EMIPAK-2B |
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Vishay Semiconductor Diodes Division |
IGBT 600V 109A 294W EMIPAK-2B |
в производстве | Trench | Three Level Inverter | 600V | 109A | 294W | 1.93V @ 15V, 75A | 100µA | 4.44nF @ 30V | Standard | Yes | 175°C (TJ) | Chassis Mount | EMIPAK-2B | EMIPAK-2B |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 61A 216W EMIPAK-1B |
в производстве | Trench | Three Level Inverter | 1200V | 61A | 216W | 2.52V @ 15V, 30A | 230µA | 3.34nF @ 30V | Standard | Yes | 150°C (TJ) | Chassis Mount | EMIPAK-1B | EMIPAK-1B |
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Vishay Semiconductor Diodes Division |
OUTPUT SW MODULES - SOT-227 IG |
в производстве | Trench | Single | 1200V | 139A | 658W | 2.55V @ 15V, 80A | 100µA | 4.4nF @ 25V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
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Vishay Semiconductor Diodes Division |
OUTPUT SW MODULES - SOT-227 IG |
в производстве | Trench | Single | 1200V | 187A | 890W | 2.55V @ 15V, 100A | 100µA | 6.15nF @ 25V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
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Vishay Semiconductor Diodes Division |
IGBT 1200V SOT-227 |
в производстве | Trench Field Stop | Single | 1200V | 281A | 1087W | 2.05V @ 15V, 100A | 100µA | 9350pF @ 25V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
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Vishay Semiconductor Diodes Division |
IGBT 650V 150A EMIPAK-2B |
в производстве | NPT | Half Bridge Inverter | 650V | 201A | 600W | 2.17V @ 15V, 150A | - | - | Standard | Yes | 175°C (TJ) | - | Module | Module |
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Vishay Semiconductor Diodes Division |
OUTPUT SW MODULES - SOT-227 IG |
в производстве | Trench | Single Switch | 650V | 167A | 577W | 2V @ 15V, 100A | 50µA | 6.6nF @ 30V | Standard | No | -40°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
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Vishay Semiconductor Diodes Division |
IGBT 600V 70A LS CHOPPER SOT-227 |
в производстве | NPT | Single | 600V | 109A | 447W | 2V @ 15V, 35A | 50µA | - | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
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Vishay Semiconductor Diodes Division |
IGBT 600V 70A HS CHOPPER SOT-227 |
в производстве | NPT | Single | 600V | 109A | 447W | 2V @ 15V, 35A | 50µA | - | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
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Vishay Semiconductor Diodes Division |
MOD IGBT 3PHASE INV 600V SIP |
в производстве | - | - | - | - | - | - | - | - | - | No | -40°C ~ 150°C (TJ) | Through Hole | 19-SIP (13 Leads), IMS-2 | IMS-2 |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 55A LS CHOPPER SOT227 |
в производстве | NPT | Single | 1200V | 84A | 431W | - | 50µA | - | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 55A HS CHOPPER SOT227 |
в производстве | NPT | Single | 1200V | 84A | 431W | - | 50µA | - | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
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Vishay Semiconductor Diodes Division |
IGBT SIP MODULE 600V 6.8A IMS-2 |
в производстве | - | Three Phase Inverter | 600V | 13A | 36W | 2V @ 15V, 13A | 250µA | 1.1nF @ 30V | Standard | No | -40°C ~ 150°C (TJ) | Through Hole | 19-SIP (13 Leads), IMS-2 | IMS-2 |
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Vishay Semiconductor Diodes Division |
MOD IGBT 3PHASE INV 600V SIP |
в производстве | - | - | 600V | 7.2A | 23W | 2.2V @ 15V, 3.9A | 250µA | 0.53nF @ 30V | Standard | No | -40°C ~ 150°C (TJ) | Through Hole | 19-SIP (13 Leads), IMS-2 | IMS-2 |
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Vishay Semiconductor Diodes Division |
MOD IGBT 3PHASE INV 600V SIP |
в производстве | - | - | - | - | - | - | - | - | - | No | -40°C ~ 150°C (TJ) | Through Hole | 19-SIP (13 Leads), IMS-2 | IMS-2 |
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Vishay Semiconductor Diodes Division |
MOD IGBT 3PHASE INV 600V SIP |
в производстве | - | - | 600V | 13A | 36W | 2.2V @ 15V, 6.8A | 250µA | 1.1nF @ 30V | Standard | No | -40°C ~ 150°C (TJ) | Through Hole | 19-SIP (13 Leads), IMS-2 | IMS-2 |
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Vishay Semiconductor Diodes Division |
MODULE MTP SWITCH |
в производстве | - | Three Phase Inverter | 1200V | 12A | 76W | - | 250µA | - | Standard | Yes | -40°C ~ 150°C (TJ) | Chassis Mount | 12-MTP Module | MTP |
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Vishay Semiconductor Diodes Division |
IGBT SIP MODULE 600V 8.8A IMS-2 |
в производстве | - | Three Phase Inverter | 600V | 8.8A | 23W | 1.66V @ 15V, 8.8A | 250µA | 0.34nF @ 30V | Standard | No | -40°C ~ 150°C (TJ) | Through Hole | 19-SIP (13 Leads), IMS-2 | IMS-2 |
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Vishay Semiconductor Diodes Division |
IGBT SIP MODULE 600V 31 IMS-2 |
в производстве | - | Three Phase Inverter | 600V | 5.7A | 23W | 1.93V @ 15V, 3A | 250µA | 0.45nF @ 30V | Standard | No | -40°C ~ 150°C (TJ) | Through Hole | 19-SIP (13 Leads), IMS-2 | IMS-2 |
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Vishay Semiconductor Diodes Division |
IGBT SIP MODULE 600V 3.9A IMS-2 |
в производстве | - | Three Phase Inverter | 600V | 7.2A | 23W | 1.95V @ 15V, 7.2A | 250µA | 0.53nF @ 30V | Standard | No | -40°C ~ 150°C (TJ) | Through Hole | 19-SIP (13 Leads), IMS-2 | IMS-2 |
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Vishay Semiconductor Diodes Division |
MOD IGBT 3PHASE INV 600V SIP |
в производстве | - | - | 600V | 20A | 63W | 2.1V @ 15V, 10A | 250µA | 2.1nF @ 30V | Standard | No | -40°C ~ 150°C (TJ) | Through Hole | 19-SIP (13 Leads), IMS-2 | IMS-2 |
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Vishay Semiconductor Diodes Division |
IGBT 600V 8.8A 23W IMS-2 |
в производстве | - | - | 600V | 8.8A | 23W | 1.7V @ 15V, 4.8A | 250µA | 0.34nF @ 30V | Standard | No | -40°C ~ 150°C (TJ) | Through Hole | 19-SIP (13 Leads), IMS-2 | IMS-2 |
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Vishay Semiconductor Diodes Division |
IGBT SIP MODULE 600V 6A IMS-2 |
в производстве | - | Three Phase Inverter | 600V | 11A | 36W | 2V @ 15V, 11A | 250µA | 0.74nF @ 30V | Standard | No | -40°C ~ 150°C (TJ) | Through Hole | 19-SIP (13 Leads), IMS-2 | IMS-2 |
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Vishay Semiconductor Diodes Division |
IGBT SIP MODULE 600V 10A IMS-2 |
в производстве | - | Three Phase Inverter | 600V | 20A | 63W | 1.84V @ 15V, 20A | 250µA | 2.1nF @ 30V | Standard | No | -40°C ~ 150°C (TJ) | Through Hole | 19-SIP (13 Leads), IMS-2 | IMS-2 |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 30A 187W MTP |
в производстве | NPT | Three Phase Inverter | 1200V | 30A | 187W | 3.66V @ 15V, 30A | 250µA | 1.95nF @ 30V | Standard | Yes | -40°C ~ 150°C (TJ) | Chassis Mount | 12-MTP Module | MTP |
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Vishay Semiconductor Diodes Division |
IGBT |
в производстве | - | Single | 600V | 107A | 403W | 2.49V @ 15V, 60A | 100µA | 9.5nF @ 30V | Single Phase Bridge Rectifier | Yes | 150°C (TJ) | Through Hole | 12-MTP Module | MTP |
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Vishay Semiconductor Diodes Division |
IGBT 600V 69A 195W MTP |
в производстве | - | Full Bridge Inverter | 600V | 69A | 195W | 3.25V @ 15V, 50A | 250µA | 5.42nF @ 30V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | 16-MTP Module | MTP |
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Vishay Semiconductor Diodes Division |
IGBT 600V 200A 652W SOT-227 |
в производстве | Trench | Single | 600V | 200A | 652W | 2V @ 15V, 100A | 100µA | - | Standard | No | -40°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 20A 240W MTP |
в производстве | NPT | Full Bridge Inverter | 1200V | 20A | 240W | 4.66V @ 15V, 40A | 250µA | 3.79nF @ 30V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | 16-MTP Module | MTP |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 40A 240W MTP |
в производстве | NPT | Full Bridge Inverter | 1200V | 40A | 240W | 4.66V @ 15V, 40A | 250µA | 3.79nF @ 30V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | 16-MTP Module | MTP |
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Vishay Semiconductor Diodes Division |
IGBT 600V 96A 378W MTP |
в производстве | - | Single | 600V | 96A | 378W | 2.15V @ 15V, 40A | 100µA | 7.43nF @ 30V | Single Phase Bridge Rectifier | Yes | 150°C (TJ) | Chassis Mount | 12-MTP Module | MTP |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 100A 446W INT-A-PAK |
в производстве | - | Single | 1200V | 100A | 446W | 1.7V @ 15V, 50A (Typ) | 1mA | 4.29nF @ 25V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | INT-A-PAK (3 + 4) | INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT 600V 100A 347W MTP |
в производстве | NPT | Half Bridge | 600V | 100A | 347W | 3.4V @ 15V, 140A | 700µA | 8nF @ 30V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | 12-MTP Module | MTP |
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Vishay Semiconductor Diodes Division |
IGBT 600V 121A 462W MTP |
в производстве | - | - | 600V | 121A | 462W | 2.29V @ 15V, 60A | 100µA | 9.5nF @ 30V | Standard | Yes | 150°C (TJ) | Chassis Mount | 16-MTP Module | MTP |
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Vishay Semiconductor Diodes Division |
TRANSISTOR INSLTED GATE BIPOLAR |
в производстве | NPT | Single | 600V | 147A | 625W | 2.8V @ 15V, 100A | 100µA | - | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4 | SOT-227 |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 100A 446W INT-A-PAK |
в производстве | - | Half Bridge | 1200V | 100A | 446W | 2.15V @ 15V, 50A | 5mA | 4.29nF @ 25V | Standard | No | 150°C (TJ) | Chassis Mount | INT-A-PAK (3 + 4) | INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 100A 405W INT-A-PAK |
в производстве | Trench | Half Bridge | 1200V | 100A | 405W | 2.35V @ 15V, 50A | 5mA | 6.24nF @ 30V | Standard | No | 175°C (TJ) | Chassis Mount | INT-A-PAK (3 + 4) | INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 200A 658W INT-A-PAK |
в производстве | - | Single | 1200V | 200A | 658W | 1.8V @ 15V, 100A (Typ) | 1mA | 7.43nF @ 25V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | INT-A-Pak | INT-A-PAK |
