номер части Производитель / Марка Краткое описание Статус деталиТип полевого транзистораТехнологииСлив к источнику напряжения (Vdss)Ток - непрерывный слив (Id) при 25 ° CDrive Voltage (Max Rds On, Min Rds On)Rds On (Макс.) @ Id, VgsVgs (th) (Max) @ IdЗаряд затвора (Qg) (Макс.) @ VgsVgs (Макс.)Входная емкость (Ciss) (Макс.) @ VdsФункция FETРассеиваемая мощность (макс.)Рабочая ТемператураТип монтажаПакет устройств поставщикаУпаковка / чехол
Cree/Wolfspeed MOSFET N-CH 1200V 10A TO-247-3 в производствеN-ChannelSiCFET (Silicon Carbide)1200V10A (Tc)20V370 mOhm @ 6A, 20V2.8V @ 1.25mA (Typ)20.4nC @ 20V+25V, -10V259pF @ 1000V
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62.5W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
Cree/Wolfspeed MOSFET N-CH 900V 22A в производствеN-ChannelSiCFET (Silicon Carbide)900V22A (Tc)15V155 mOhm @ 15A, 15V3.5V @ 3mA17.3nC @ 15V+18V, -8V350pF @ 600V
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83W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажD2PAK-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Cree/Wolfspeed MOSFET NCH 1.7KV 72A TO247 в производствеN-ChannelSiCFET (Silicon Carbide)1700V72A (Tc)20V70 mOhm @ 50A, 20V4V @ 18mA188nC @ 20V+25V, -10V3672pF @ 1kV
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520W (Tc)-40°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
Cree/Wolfspeed MOSFET N-CH 1000V 22A TO247-4L в производствеN-ChannelSiCFET (Silicon Carbide)1000V22A (Tc)15V155 mOhm @ 15A, 15V3.5V @ 3mA21.5nC @ 15V±15V350pF @ 600V
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83W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-4LTO-247-4
Cree/Wolfspeed MOSFET N-CH 900V 22A в производствеN-ChannelSiCFET (Silicon Carbide)900V22A (Tc)15V155 mOhm @ 15A, 15V3.5V @ 3mA17.3nC @ 15V+18V, -8V350pF @ 600V
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83W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажD2PAK-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Cree/Wolfspeed ZFET SIC DMOSFET 1700V VDS RDS в производствеN-ChannelSiCFET (Silicon Carbide)1700V40A (Tc)20V125 mOhm @ 28A, 20V4V @ 10mA120nC @ 20V+25V, -10V2250pF @ 1000V
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277W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-4LTO-247-4
Cree/Wolfspeed ZFET SIC DMOSFET 1700V VDS RDS в производствеN-ChannelSiCFET (Silicon Carbide)1700V72A (Tc)20V59 mOhm @ 50A, 20V4V @ 18mA188nC @ 20V+25V, -10V3672pF @ 1000V
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520W (Tc)-40°C ~ 150°C (TJ)Through HoleTO-247-4LTO-247-4
Cree/Wolfspeed MOSFET N-CH 900V 11.5A в производствеN-ChannelSiCFET (Silicon Carbide)900V11.5A (Tc)15V360 mOhm @ 7.5A, 15V3.5V @ 1.2mA9.5nC @ 15V+18V, -8V150pF @ 600V
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54W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
Cree/Wolfspeed MOSFET N-CH 900V 11A в производствеN-ChannelSiCFET (Silicon Carbide)900V11A (Tc)15V360 mOhm @ 7.5A, 15V3.5V @ 1.2mA9.5nC @ 15V+18V, -8V150pF @ 600V
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50W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажD2PAK-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Cree/Wolfspeed MOSFET N-CH 900V 11A в производствеN-ChannelSiCFET (Silicon Carbide)900V11A (Tc)15V360 mOhm @ 7.5A, 15V3.5V @ 1.2mA9.5nC @ 15V+18V, -8V150pF @ 600V
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50W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажD2PAK-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Cree/Wolfspeed MOSFET N-CH 1700V 5.3A TO247 в производствеN-ChannelSiCFET (Silicon Carbide)1700V5.3A (Tc)20V1.4 Ohm @ 2A, 20V3.1V @ 500µA (Typ)13nC @ 20V+25V, -10V200pF @ 1000V
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78W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажD2PAK (7-Lead)TO-263-7 (Straight Leads)
Cree/Wolfspeed 900V 120 MOHM G3 SIC MOSFET в производствеN-ChannelSiCFET (Silicon Carbide)900V23A (Tc)15V155 mOhm @ 15A, 15V3.5V @ 3mA17.3nC @ 15V+18V, -8V350pF @ 600V
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97W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
Cree/Wolfspeed MOSFET N-CH 1700V 4.9A TO247 в производствеN-ChannelSiCFET (Silicon Carbide)1700V4.9A (Tc)20V1.1 Ohm @ 2A, 20V2.4V @ 100µA13nC @ 20V+25V, -10V191pF @ 1000V
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69W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
Cree/Wolfspeed MOSFET N-CH 1200V 19A TO-247 в производствеN-ChannelSiCFET (Silicon Carbide)1200V19A (Tc)20V196 mOhm @ 10A, 20V2.5V @ 500µA32.6nC @ 20V+25V, -10V527pF @ 800V
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125W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
Cree/Wolfspeed MOSFET N-CH 1000V 22A D2PAK-7 в производствеN-ChannelSiCFET (Silicon Carbide)1000V22A (Tc)15V155 mOhm @ 15A, 15V3.5V @ 3mA21.5nC @ 15V+15V, -4V350pF @ 600V
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83W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажD2PAK-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Cree/Wolfspeed MOSFET N-CH 900V 36A TO247-3 в производствеN-ChannelSiCFET (Silicon Carbide)900V36A (Tc)15V78 mOhm @ 20A, 15V2.1V @ 5mA30.4nC @ 15V+18V, -8V660pF @ 600V
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125W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
Cree/Wolfspeed 1000V 65 MOHM G3 SIC MOSFET в производствеN-ChannelSiCFET (Silicon Carbide)1000V35A (Tc)15V78 mOhm @ 20A, 15V3.5V @ 5mA35nC @ 15V+19V, -8V660pF @ 600V
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113.5W (Tc)-55°C ~ 150°C (TJ)
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TO-247-4LTO-247-4
Cree/Wolfspeed MOSFET N-CH 1000V 35A D2PAK-7 в производствеN-ChannelSiCFET (Silicon Carbide)1000V35A (Tc)15V78 mOhm @ 20A, 15V3.5V @ 5mA35nC @ 15V+15V, -4V660pF @ 600V
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113.5W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажD2PAK-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Cree/Wolfspeed MOSFET N-CH 1200V 30.8A TO247-4 в производствеN-ChannelSiCFET (Silicon Carbide)1200V30.8A (Tc)15V90 mOhm @ 20A, 15V4V @ 5mA51nC @ 15V+19V, -8V1350pF @ 1000V
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119W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-4LTO-247-4
Cree/Wolfspeed MOSFET N-CH 900V 35A D2PAK-7 в производствеN-ChannelSiCFET (Silicon Carbide)900V35A (Tc)15V78 mOhm @ 20A, 15V2.1V @ 5mA30nC @ 15V+19V, -8V660pF @ 600V
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113W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажD2PAK-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Cree/Wolfspeed MOSFET N-CH 1200V 30A D2PAK-7 в производствеN-ChannelSiCFET (Silicon Carbide)1200V30A (Tc)15V90 mOhm @ 20A, 15V4V @ 5mA51nC @ 15V+19V, -8V1350pF @ 1000V
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113.6W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажD2PAK-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Cree/Wolfspeed MOSFET N-CH 1200V 31.6A TO247 в производствеN-ChannelSiCFET (Silicon Carbide)1200V36A (Tc)20V98 mOhm @ 20A, 20V4V @ 5mA62nC @ 5V+25V, -10V950pF @ 1000V
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192W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
Cree/Wolfspeed MOSFET N-CH 1200V 60A TO-247 в производствеN-ChannelSiCFET (Silicon Carbide)1200V60A (Tc)20V52 mOhm @ 40A, 20V2.8V @ 10mA115nC @ 20V+25V, -10V1893pF @ 1000V
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330W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
Cree/Wolfspeed MOSFET N-CH 1200V 90A TO-247 в производствеN-ChannelSiCFET (Silicon Carbide)1200V90A (Tc)20V34 mOhm @ 50A, 20V2.4V @ 10mA161nC @ 20V+25V, -10V2788pF @ 1000V
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463W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
Cree/Wolfspeed E-SERIES 900V 280 MOHM G3 SIC в производствеN-ChannelSiCFET (Silicon Carbide)900V11.5A (Tc)15V360 mOhm @ 7.5A, 15V3.5V @ 1.2mA9.5nC @ 15V+18V, -8V150pF @ 600V
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54W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
Cree/Wolfspeed E-SERIES 900V 120 MOHM G3 SIC в производствеN-ChannelSiCFET (Silicon Carbide)900V23A (Tc)15V155 mOhm @ 15A, 15V3.5V @ 3mA17.3nC @ 15V+18V, -8V350pF @ 600V
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97W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
Cree/Wolfspeed E-SERIES 900V 65 MOHM G3 SIC M в производствеN-ChannelSiCFET (Silicon Carbide)900V35A (Tc)15V84.5 mOhm @ 20A, 15V3.5V @ 5mA30.4nC @ 15V+18V, -8V660pF @ 600V
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125W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
Cree/Wolfspeed ZFET 900V 30 MOHM G3 SIC MOSFE в производствеN-ChannelSiCFET (Silicon Carbide)900V63A (Tc)15V39 mOhm @ 35A, 15V3.5V @ 11mA87nC @ 15V+15V, -4V1864pF @ 600V
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149W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-4LTO-247-4
Cree/Wolfspeed MOSFET N-CH 1700V 5.3A TO247 в производствеN-ChannelSiCFET (Silicon Carbide)1700V5.3A (Tc)20V1.4 Ohm @ 2A, 20V3.1V @ 500µA (Typ)13nC @ 20V+25V, -10V200pF @ 1000V
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78W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажD2PAK-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Cree/Wolfspeed MOSFET N-CH 900V 35A D2PAK-7 в производствеN-ChannelSiCFET (Silicon Carbide)900V35A (Tc)15V78 mOhm @ 20A, 15V2.1V @ 5mA30nC @ 15V+19V, -8V660pF @ 600V
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113W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажD2PAK-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Cree/Wolfspeed 1000V 65 MOHM G3 SIC MOSFET в производствеN-ChannelSiC (Silicon Carbide Junction Transistor)1000V35A (Tc)15V78 mOhm @ 20A, 15V3.5V @ 5mA35nC @ 15V+15V, -4V660pF @ 600V
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113.5W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-263-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Cree/Wolfspeed 1200V 75 MOHM G3 SIC MOSFET ON в производствеN-ChannelSiC (Silicon Carbide Junction Transistor)1200V30A (Tc)15V90 mOhm @ 20A, 15V4V @ 5mA51nC @ 15V+15V, -4V1350pF @ 1000V
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113.6W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-263-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Cree/Wolfspeed MOSFET N-CH 1200V 42A TO-247-3 устарелыйN-ChannelSiCFET (Silicon Carbide)1200V42A (Tc)20V110 mOhm @ 20A, 20V4V @ 1mA90.8nC @ 20V+25V, -5V1915pF @ 800V
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215W (Tc)-55°C ~ 135°C (TJ)Through HoleTO-247-3TO-247-3
Cree/Wolfspeed MOSFET N-CH 1200V 24A TO247 устарелыйN-ChannelSiCFET (Silicon Carbide)1200V24A (Tc)20V220 mOhm @ 10A, 20V4V @ 500µA47.1nC @ 20V+25V, -5V928pF @ 800V
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134W (Tc)-55°C ~ 135°C (TJ)Through HoleTO-247TO-247-3
Cree/Wolfspeed MOSFET N-CHANNEL 1200V 50A DIE устарелыйN-ChannelSiCFET (Silicon Carbide)1200V50A (Tj)20V110 mOhm @ 20A, 20V4V @ 1mA90.8nC @ 20V+25V, -5V1915pF @ 800V
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313mW (Tj)-55°C ~ 150°C (TJ)SMD Поверхностный монтажDieDie
Cree/Wolfspeed MOSFET N-CHANNEL 1200V 28A DIE устарелыйN-ChannelSiCFET (Silicon Carbide)1200V28A (Tj)20V220 mOhm @ 10A, 20V4V @ 1mA47.1nC @ 20V+25V, -5V928pF @ 800V
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202W (Tj)-55°C ~ 150°C (TJ)SMD Поверхностный монтажDieDie