Производители для Транзисторы - биполярные (BJT) - массивы, предварительно предвзятые

номер части Производитель / Марка Краткое описание Статус деталиТип транзистораТок - коллектор (Ic) (макс.)Напряжение - Разрыв эмиттера коллектора (макс.)Resistor - Base (R1)Resistor - Emitter Base (R2)Постоянный ток постоянного тока (hFE) (мин.) @ Ic, VceVce Saturation (Макс.) @ Ib, IcТок - отсечка коллектора (макс.)Частота - переходМощность - макс.Тип монтажаУпаковка / чехолПакет устройств поставщика
Toshiba Semiconductor and Storage TRANSISTOR 2NPN PREBIAS 0.2W US6 в производстве2 NPN - Pre-Biased (Dual)100mA50V10 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA500nA250MHz200mWSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
Panasonic Electronic Components TRANSISTOR PREBIAS NPN/PNP SSSMINI6 устарелый1 NPN, 1 PNP - Pre-Biased (Dual)80mA50V22 kOhms22 kOhms60 @ 5mA, 10V250mV @ 300µA, 10mA500nA150MHz, 80MHz125mWSMD Поверхностный монтажSOT-963SSSMini6-F1
Panasonic Electronic Components TRANSISTOR 2NPN PREBIAS SSSMINI6 устарелый2 NPN - Pre-Biased (Dual)80mA50V4.7 kOhms47 kOhms80 @ 5mA, 10V250mV @ 300µA, 10mA500nA150MHz125mWSMD Поверхностный монтажSOT-963SSSMini6-F1
Nexperia USA Inc. TRANSISTOR PREBIAS NPN/PNP 6TSSOP в производстве1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V47 kOhms, 2.2 kOhms47 kOhms80 @ 5mA, 5V / 100 @ 10mA, 5V150mV @ 500µA, 10mA / 100mV @ 250µA, 5mA1µA
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300mWSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-3636-TSSOP
Nexperia USA Inc. TRANSISTOR 2PNP PREBIAS 0.3W SOT666 в производстве2 PNP - Pre-Biased (Dual)100mA50V10 kOhms47 kOhms100 @ 5mA, 5V100mV @ 250µA, 5mA1µA
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300mWSMD Поверхностный монтажSOT-563, SOT-666SOT-666
Nexperia USA Inc. TRANSISTOR 2PNP PREBIAS 0.3W SOT666 в производстве2 PNP - Pre-Biased (Dual)100mA50V10 kOhms47 kOhms100 @ 5mA, 5V100mV @ 250µA, 5mA1µA
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300mWSMD Поверхностный монтажSOT-563, SOT-666SOT-666
Diodes Incorporated TRANSISTOR PREBIAS NPN/PNP SOT363 в производстве1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V4.7 kOhms
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100 @ 1mA, 5V300mV @ 250µA, 2.5mA
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250MHz200mWSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363SOT-363
ON Semiconductor TRANSISTOR NPN/PNP PREBIAS SOT963 в производстве1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V10 kOhms47 kOhms80 @ 5mA, 10V250mV @ 300µA, 10mA500nA
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339mWSMD Поверхностный монтажSOT-963SOT-963
Nexperia USA Inc. TRANSISTOR PREBIAS NPN/PNP 6TSSOP в производстве1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V22 kOhms47 kOhms80 @ 5mA, 5V150mV @ 500µA, 10mA1µA
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300mWSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-3636-TSSOP
Nexperia USA Inc. PRMH11/SOT1268/DFN1412-6 в производстве2 NPN - Pre-Biased (Dual)100mA50V10 kOhms10 kOhms30 @ 5mA, 5V150mV @ 500µA, 10mA1µA230MHz480mWSMD Поверхностный монтаж6-XFDFN Exposed PadDFN1412-6
Nexperia USA Inc. PRMH13/SOT1268/DFN1412-6 в производстве2 NPN - Pre-Biased (Dual)100mA50V4.7 kOhms47 kOhms100 @ 10mA, 5V100mV @ 250µA, 5mA1µA230MHz480mWSMD Поверхностный монтаж6-XFDFN Exposed PadDFN1412-6
Nexperia USA Inc. TRANSISTOR 2NPN PREBIAS 0.3W 6TSSOP в производстве2 NPN - Pre-Biased (Dual)100mA50V47 kOhms22 kOhms60 @ 5mA, 5V150mV @ 500µA, 10mA1µA
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300mWSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-3636-TSSOP
Nexperia USA Inc. TRANSISTOR 2NPN PREBIAS 0.3W 6TSSOP в производстве2 NPN - Pre-Biased (Dual)100mA50V2.2 kOhms47 kOhms100 @ 10mA, 5V100mV @ 250µA, 5mA1µA
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300mWSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-3636-TSSOP
Nexperia USA Inc. TRANSISTOR 2NPN PREBIAS 0.3W 6TSSOP в производстве2 NPN - Pre-Biased (Dual)100mA50V2.2 kOhms47 kOhms100 @ 10mA, 5V100mV @ 250µA, 5mA1µA
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300mWSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-3636-TSSOP
Diodes Incorporated TRANSISTOR PREBIAS NPN/PNP SOT363 в производстве1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V4.7 kOhms4.7 kOhms50 @ 10mA, 5V / 40 @ 10mA, 5V300mV @ 500µA, 10mA500nA250MHz200mWSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363SOT-363
Nexperia USA Inc. TRANSISTOR 2NPN PREBIAS 0.3W 6TSSOP в производстве2 NPN - Pre-Biased (Dual)100mA50V22 kOhms47 kOhms80 @ 5mA, 5V150mV @ 500µA, 10mA1µA
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300mWSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-3636-TSSOP
ON Semiconductor TRANSISTOR 2NPN PREBIAS 0.339W SOT963 в производстве2 NPN - Pre-Biased (Dual)100mA50V10 kOhms47 kOhms80 @ 5mA, 10V250mV @ 300µA, 10mA500nA
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339mWSMD Поверхностный монтажSOT-963SOT-963
Rohm Semiconductor NPNNPN DIGITAL TRANSISTOR CORR в производстве2 NPN - Pre-Biased (Dual)100mA
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2.2 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA
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250MHz150mWSMD Поверхностный монтажSOT-563, SOT-666EMT6
ON Semiconductor TRANSISTOR 2PNP PREBIAS 0.408W SOT963 в производстве2 PNP - Pre-Biased (Dual)100mA50V47 kOhms47 kOhms80 @ 5mA, 10V250mV @ 300µA, 10mA500nA
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408mWSMD Поверхностный монтажSOT-963SOT-963
Nexperia USA Inc. TRANSISTOR NPN/PNP RET 6DFN в производстве1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V2.2 kOhms47 kOhms100 @ 10mA, 5V100mV @ 250µA, 5mA1µA230MHz, 180MHz230mWSMD Поверхностный монтаж6-XFDFN Exposed PadDFN1010B-6
Nexperia USA Inc. TRANSISTOR NPN/PNP RET 6DFN в производстве1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V22 kOhms47 kOhms80 @ 5mA, 5V150mV @ 500µA, 10mA1µA230MHz, 180MHz350mWSMD Поверхностный монтаж6-XFDFN Exposed PadDFN1010B-6
Nexperia USA Inc. TRANSISTOR NPN/NPN RET 6DFN в производстве2 NPN - Pre-Biased (Dual)100mA50V47 kOhms47 kOhms80 @ 5mA, 5V150mV @ 500µA, 10mA1µA230MHz230mWSMD Поверхностный монтаж6-XFDFN Exposed PadDFN1010B-6
Nexperia USA Inc. TRANSISTOR NPN/NPN RET 6DFN в производстве2 NPN - Pre-Biased (Dual)100mA50V10 kOhms47 kOhms100 @ 5mA, 5V100mV @ 250µA, 5mA1µA230MHz230mWSMD Поверхностный монтаж6-XFDFN Exposed PadDFN1010B-6
Nexperia USA Inc. TRANSISTOR NPN/PNP RET 6DFN в производстве1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V10 kOhms10 kOhms30 @ 5mA, 5V150mV @ 500µA, 10mA1µA230MHz, 180MHz230mWSMD Поверхностный монтаж6-XFDFN Exposed PadDFN1010B-6
Nexperia USA Inc. TRANSISTOR NPN/NPN RET 6DFN в производстве2 NPN - Pre-Biased (Dual)100mA50V2.2 kOhms47 kOhms100 @ 10mA, 5V100mV @ 250µA, 5mA1µA230MHz350mWSMD Поверхностный монтаж6-XFDFN Exposed PadDFN1010B-6
Nexperia USA Inc. TRANSISTOR PNP/PNP RET 6DFN в производстве2 PNP Pre-Biased (Dual)100mA50V10 kOhms10 kOhms30 @ 5mA, 5V150mV @ 500µA, 10mA1µA180MHz230mWSMD Поверхностный монтаж6-XFDFN Exposed PadDFN1010B-6
Nexperia USA Inc. TRANSISTOR NPN/PNP RET 6DFN в производстве1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V4.7 kOhms47 kOhms100 @ 10mA, 5V100mV @ 250µA, 5mA1µA230MHz, 180MHz350mWSMD Поверхностный монтаж6-XFDFN Exposed PadDFN1010B-6
Nexperia USA Inc. TRANSISTOR NPN/NPN RET 6DFN в производстве2 NPN - Pre-Biased (Dual)100mA50V4.7 kOhms47 kOhms100 @ 10mA, 5V100mV @ 250µA, 5mA1µA230MHz230mWSMD Поверхностный монтаж6-XFDFN Exposed PadDFN1010B-6
Nexperia USA Inc. TRANSISTOR NPN/PNP RET 6DFN в производстве1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V22 kOhms22 kOhms60 @ 5mA, 5V150mV @ 500µA, 10mA1µA230MHz, 180MHz230mWSMD Поверхностный монтаж6-XFDFN Exposed PadDFN1010B-6
Nexperia USA Inc. TRANSISTOR NPN PREBIAS/PNP 0.6W 6TSOP в производстве1 NPN Pre-Biased, 1 PNP100mA, 1A50V, 20V4.7 kOhms4.7 kOhms30 @ 10mA, 5V / 220 @ 500mA, 2V150mV @ 500µA, 10mA / 280mV @ 100mA, 1A1µA, 100nA185MHz600mWSMD Поверхностный монтажSC-74, SOT-4576-TSOP
Nexperia USA Inc. TRANSISTOR NPN PREBIAS/PNP 0.6W 6TSOP в производстве1 NPN Pre-Biased, 1 PNP100mA, 1A50V, 20V10 kOhms10 kOhms30 @ 5mA, 5V / 220 @ 500mA, 2V150mV @ 500µA, 10mA / 280mV @ 100mA, 1A1µA, 100nA185MHz600mWSMD Поверхностный монтажSC-74, SOT-4576-TSOP
Nexperia USA Inc. TRANSISTOR NPN PREBIAS/PNP 0.6W 6TSOP в производстве1 NPN Pre-Biased, 1 PNP100mA, 700mA50V, 60V2.2 kOhms2.2 kOhms30 @ 20mA, 5V / 150 @ 500mA, 5V150mV @ 500µA, 10mA / 340mV @ 100mA, 1A1µA, 100nA185MHz600mWSMD Поверхностный монтажSC-74, SOT-4576-TSOP
Nexperia USA Inc. TRANSISTOR NPN/NPN RET 6DFN в производстве2 NPN - Pre-Biased (Dual)100mA50V10 kOhms10 kOhms30 @ 5mA, 5V150mV @ 500µA, 10mA1µA230MHz230mWSMD Поверхностный монтаж6-XFDFN Exposed PadDFN1010B-6
Diodes Incorporated TRANSISTOR 2NPN PREBIAS 0.2W SOT363 в производстве2 NPN - Pre-Biased (Dual)100mA50V100 kOhms100 kOhms82 @ 5mA, 5V300mV @ 500µA, 10mA500nA250MHz200mWSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363SOT-363
ON Semiconductor TRANSISTOR 2NPN PREBIAS 0.23W SOT553 в производстве2 NPN - Pre-Biased (Dual)100mA50V47 kOhms47 kOhms80 @ 5mA, 10V250mV @ 300µA, 10mA500nA
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230mWSMD Поверхностный монтажSOT-553SOT-553
Rohm Semiconductor PNPNPN DIGITAL TRANSISTOR CORR в производстве1 NPN, 1 PNP - Pre-Biased (Dual)100mA
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4.7 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA
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250MHz150mWSMD Поверхностный монтажSOT-563, SOT-666EMT6
Toshiba Semiconductor and Storage TRANSISTOR 2NPN PREBIAS 0.2W US6 в производстве2 NPN - Pre-Biased (Dual)100mA50V47 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA500nA250MHz200mWSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
Nexperia USA Inc. TRANSISTOR 2PNP PREBIAS 0.3W SOT666 в производстве2 PNP - Pre-Biased (Dual)100mA50V2.2 kOhms47 kOhms100 @ 10mA, 5V100mV @ 250µA, 5mA1µA
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300mWSMD Поверхностный монтажSOT-563, SOT-666SOT-666
Nexperia USA Inc. TRANSISTOR 2NPN PREBIAS 0.3W SOT666 в производстве2 NPN - Pre-Biased (Dual)100mA50V2.2 kOhms2.2 kOhms30 @ 20mA, 5V150mV @ 500µA, 10mA1µA
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300mWSMD Поверхностный монтажSOT-563, SOT-666SOT-666
Toshiba Semiconductor and Storage TRANSISTOR NPN/PNP PREBIAS 0.2W US6 устарелый1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V2.2 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA100nA (ICBO)200MHz200mWSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
Toshiba Semiconductor and Storage TRANSISTOR NPN/PNP PREBIAS 0.2W US6 устарелый1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V47 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA100µA (ICBO)250MHz, 200MHz200mWSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363US6
Nexperia USA Inc. TRANSISTOR PREBIAS NPN/PNP SOT666 в производстве1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V10 kOhms10 kOhms30 @ 5mA, 5V150mV @ 500µA, 10mA1µA
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300mWSMD Поверхностный монтажSOT-563, SOT-666SOT-666
Nexperia USA Inc. TRANSISTOR PREBIAS NPN/PNP SOT666 в производстве1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V10 kOhms10 kOhms30 @ 5mA, 5V150mV @ 500µA, 10mA1µA
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300mWSMD Поверхностный монтажSOT-563, SOT-666SOT-666
ON Semiconductor TRANSISTOR NPN/PNP 50V BIPOLAR SOT553 в производстве1 NPN, 1 PNP - Pre - Biased (Base-Collector Junction)100mA50V22 kOhms22 kOhms60 @ 5mA, 10V250mV @ 300µA, 10mA500nA
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500mWSMD Поверхностный монтажSOT-553SOT-553
Diodes Incorporated TRANSISTOR PREBIAS NPN/PNP SOT563 в производстве1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V47 kOhms, 2.2 kOhms47 kOhms80 @ 5mA, 5V / 100 @ 10mA, 5V150mV @ 500µA, 10mA / 100mV @ 250µA, 5mA1µA
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300mWSMD Поверхностный монтажSOT-563, SOT-666SOT-563
Rohm Semiconductor PNPNPN DIGITAL TRANSISTOR CORR в производстве1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V4.7 kOhms
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100 @ 1mA, 5V300mV @ 250µA, 5mA500nA (ICBO)250MHz150mWSMD Поверхностный монтажSOT-563, SOT-666EMT6
Nexperia USA Inc. TRANSISTOR PREBIAS NPN/PNP SOT666 в производстве1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V47 kOhms47 kOhms80 @ 5mA, 5V150mV @ 500µA, 10mA1µA
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300mWSMD Поверхностный монтажSOT-563, SOT-666SOT-666
Nexperia USA Inc. TRANSISTOR PREBIAS NPN/PNP SOT666 в производстве1 NPN, 1 PNP - Pre-Biased (Dual)100mA50V10 kOhms47 kOhms100 @ 5mA, 5V100mV @ 250µA, 5mA1µA
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300mWSMD Поверхностный монтажSOT-563, SOT-666SOT-666
Toshiba Semiconductor and Storage TRANSISTOR 2NPN PREBIAS 0.3W SMV в производстве2 NPN - Pre-Biased (Dual)100mA50V10 kOhms47 kOhms80 @ 10mA, 5V300mV @ 250µA, 5mA100nA (ICBO)250MHz300mWSMD Поверхностный монтажSC-74A, SOT-753SMV
Nexperia USA Inc. TRANSISTOR NPN PREBIAS/PNP 6TSSOP в производстве1 NPN Pre-Biased, 1 PNP100mA, 500mA50V, 15V4.7 kOhms4.7 kOhms30 @ 10mA, 5V / 150 @ 100mA, 2V150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA1µA, 100nA280MHz300mWSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-3636-TSSOP
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