Microsemi агент по продажам - Тиристоры - SCR - UPGA301AE3/TR13 UPGA301A/TR13

номер части	Производитель / Марка	Краткое описание	Статус детали	Состояние напряжения - выключено	Запуск триггера напряжения (Vgt) (макс.)	Запуск триггера тока (Igt) (Макс.)	Напряжение - состояние включения (Vtm) (макс.)	Current - On State (It (AV)) (Макс.)	Current - On State (It (RMS)) (Макс.)	Ток - Удержание (Ih) (Макс.)	Текущее состояние выключения (макс.)	Current - Non Rep. Surge 50, 60Hz (Itsm)	Тип SCR	Рабочая Температура	Тип монтажа	Упаковка / чехол	Пакет устройств поставщика
UPGA301AE3/TR13	Microsemi Corporation	SCR 100A 100V POWERMITE	в производстве	125V	750mV	20µA	1.5V	-	-	2.5mA	10mA	100A	Sensitive Gate	-25°C ~ 125°C	SMD Поверхностный монтаж	Powermite®3	Powermite 3
UPGA301A/TR13	Microsemi Corporation	SCR 100A 100V POWERMITE	в производстве	125V	750mV	20µA	1.5V	-	-	2.5mA	10mA	100A	Sensitive Gate	-25°C ~ 125°C	SMD Поверхностный монтаж	Powermite®3	Powermite 3
GA301AE3	Microsemi Corporation	SCR	в производстве	100V	750mV	200µA	1.5V	-	-	5mA	100nA	-	Standard Recovery	0°C ~ 125°C	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
GA101	Microsemi Corporation	DIODE SCR PLANAR 60V TO-18	в производстве	60V	-	-	-	-	200mA	-	-	-	Standard Recovery	-65°C ~ 150°C	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
GA201AE3	Microsemi Corporation	SCR	в производстве	100V	750mV	200µA	1.5V	25mA	-	5mA	100nA	-	Standard Recovery	-65°C ~ 150°C	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
JANTX2N3027	Microsemi Corporation	SCR SENS 30V 0.25A TO-18	Discontinued at -	30V	800mV	200µA	1.5V	-	250mA	5mA	100nA	5A, 8A	Sensitive Gate	-65°C ~ 150°C	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
2N2323S	Microsemi Corporation	DIODE 50VDC TO-5	устарелый	50V	800mV	200µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
2N2329	Microsemi Corporation	DIODE 400VDC TO-5	устарелый	400V	800mV	200µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
JANTX2N2323	Microsemi Corporation	DIODE SILICON CTRL TO-5	устарелый	50V	800mV	200µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5-3
JANTX2N2324A	Microsemi Corporation	DIODE SILICON CTRL TO-5	устарелый	100V	600mV	20µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
JANTX2N2324S	Microsemi Corporation	DIODE SILICON CTRL TO-5	устарелый	100V	800mV	200µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
JANTX2N2326	Microsemi Corporation	DIODE SILICON CTRL TO-5	устарелый	200V	800mV	200µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
JANTX2N2326AS	Microsemi Corporation	DIODE SILICON CTRL TO-5	устарелый	200V	800mV	200µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
JANTX2N2326S	Microsemi Corporation	DIODE SILICON CTRL TO-5	устарелый	200V	800mV	200µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
JANTX2N2328	Microsemi Corporation	DIODE SILICON CTRL TO-5	устарелый	300V	800mV	200µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
JANTX2N2329	Microsemi Corporation	DIODE SILICON CTRL TO-5	устарелый	400V	800mV	200µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
JANTX2N3029	Microsemi Corporation	SCR SENS 100V 0.5A TO-18	в производстве	1kV	800mV	200µA	1.5V	-	250mA	5mA	100nA	5A, 8A	Sensitive Gate	-65°C ~ 150°C	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
JAN2N2323	Microsemi Corporation	DIODE SILICON CTRL TO-5	устарелый	50V	800mV	200µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
JANTXV2N2323	Microsemi Corporation	DIODE SILICON CTRL TO-5	устарелый	50V	800mV	200µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
JAN2N2323A	Microsemi Corporation	DIODE SILICON CTRL TO-5	устарелый	50V	600mV	20µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
JANTXV2N2323A	Microsemi Corporation	DIODE SILICON CTRL TO-5	устарелый	50V	600mV	20µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
JAN2N2323AS	Microsemi Corporation	DIODE SILICON CTRL TO39	устарелый	50V	600mV	20µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
JANTXV2N2323AS	Microsemi Corporation	DIODE SILICON CTRL TO39	устарелый	50V	600mV	20µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
JAN2N2323S	Microsemi Corporation	DIODE SILICON CTRL TO39	устарелый	50V	800mV	200µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
JANTX2N2323S	Microsemi Corporation	DIODE SILICON CTRL TO39	устарелый	50V	800mV	200µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
JANTXV2N2323S	Microsemi Corporation	DIODE SILICON CTRL TO39	устарелый	50V	800mV	200µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
JANTX2N2324	Microsemi Corporation	DIODE SILICON CTRL TO-5	устарелый	100V	800mV	200µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
JANTXV2N2324	Microsemi Corporation	DIODE SILICON CTRL TO-5	устарелый	100V	800mV	200µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
JAN2N2324A	Microsemi Corporation	DIODE SILICON CTRL TO-5	устарелый	100V	600mV	20µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
JANTXV2N2324A	Microsemi Corporation	DIODE SILICON CTRL TO-5	устарелый	100V	600mV	20µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
JAN2N2324AS	Microsemi Corporation	DIODE SILICON CTRL TO39	устарелый	100V	600mV	20µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
JANTXV2N2324AS	Microsemi Corporation	DIODE SILICON CTRL TO39	устарелый	100V	600mV	20µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
JANTXV2N2324S	Microsemi Corporation	DIODE SILICON CTRL TO39	устарелый	100V	800mV	200µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
JANTXV2N2326	Microsemi Corporation	DIODE SILICON CTRL TO-5	устарелый	200V	800mV	200µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
JAN2N2326A	Microsemi Corporation	DIODE SILICON CTRL TO-5	устарелый	200V	600mV	20µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
JANTX2N2326A	Microsemi Corporation	DIODE SILICON CTRL TO-5	устарелый	200V	600mV	20µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
JANTXV2N2326A	Microsemi Corporation	DIODE SILICON CTRL TO-5	устарелый	200V	600mV	20µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
JAN2N2326AS	Microsemi Corporation	DIODE SILICON CTRL TO39	устарелый	200V	600mV	20µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
JANTXV2N2326AS	Microsemi Corporation	DIODE SILICON CTRL TO39	устарелый	200V	600mV	20µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
JAN2N2326S	Microsemi Corporation	DIODE SILICON CTRL TO39	устарелый	200V	800mV	200µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
JANTXV2N2326S	Microsemi Corporation	DIODE SILICON CTRL TO39	устарелый	200V	800mV	200µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
JAN2N2328	Microsemi Corporation	DIODE SILICON CTRL TO-5	устарелый	300V	800mV	200µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
JANTXV2N2328	Microsemi Corporation	DIODE SILICON CTRL TO-5	устарелый	300V	800mV	200µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
JAN2N2328A	Microsemi Corporation	DIODE SILICON CTRL TO-5	устарелый	300V	600mV	20µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
JANTX2N2328A	Microsemi Corporation	DIODE SILICON CTRL TO-5	устарелый	300V	600mV	20µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
JANTXV2N2328A	Microsemi Corporation	DIODE SILICON CTRL TO-5	устарелый	300V	600mV	20µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
JAN2N2328AS	Microsemi Corporation	DIODE SILICON CTRL TO39	устарелый	300V	600mV	20µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
JANTX2N2328AS	Microsemi Corporation	DIODE SILICON CTRL TO39	устарелый	300V	600mV	20µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
JANTXV2N2328AS	Microsemi Corporation	DIODE SILICON CTRL TO39	устарелый	300V	600mV	20µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
JAN2N2328S	Microsemi Corporation	DIODE SILICON CTRL TO39	устарелый	300V	800mV	200µA	-	220mA	-	2mA	-	-	Sensitive Gate	-65°C ~ 125°C	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)

Производители для Тиристоры - SCR