WeEn Semiconductors Co., Ltd агент по продажам - Тиристоры - SCR - BT169D-L,116 BT149G,126

номер части	Производитель / Марка	Краткое описание	Статус детали	Состояние напряжения - выключено	Запуск триггера напряжения (Vgt) (макс.)	Запуск триггера тока (Igt) (Макс.)	Напряжение - состояние включения (Vtm) (макс.)	Current - On State (It (AV)) (Макс.)	Current - On State (It (RMS)) (Макс.)	Ток - Удержание (Ih) (Макс.)	Текущее состояние выключения (макс.)	Current - Non Rep. Surge 50, 60Hz (Itsm)	Тип SCR	Рабочая Температура	Тип монтажа	Упаковка / чехол	Пакет устройств поставщика
BT169D-L,116	WeEn Semiconductors	THYRISTOR 400V 50MA TO92-3	в производстве	400V	800mV	50µA	1.7V	500mA	800mA	1mA	2µA	8A, 9A	Sensitive Gate	125°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92
BT149G,126	WeEn Semiconductors	THYRISTOR 600V 0.8A SOT54	в производстве	600V	800mV	200µA	1.7V	500mA	800mA	5mA	100µA	8A, 9A	Sensitive Gate	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BT149G,412	WeEn Semiconductors	THYRISTOR .8A 600V TO-92	в производстве	600V	800mV	200µA	1.7V	500mA	800mA	5mA	100µA	8A, 9A	Sensitive Gate	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BT151S-650R,118	WeEn Semiconductors	THYRISTOR 650V 12A DPAK	в производстве	650V	1.5V	15mA	1.75V	7.5A	12A	20mA	500µA	120A, 132A	Standard Recovery	-40°C ~ 125°C	SMD Поверхностный монтаж	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK
BT151-500R,127	WeEn Semiconductors	THYRISTOR 12A 500V TO220AB	в производстве	500V	1.5V	15mA	1.75V	7.5A	12A	20mA	500µA	120A, 132A	Standard Recovery	-40°C ~ 125°C	Through Hole	TO-220-3	TO-220AB
BT151-650R,127	WeEn Semiconductors	THYRISTOR 12A 650V TO220AB	в производстве	650V	1.5V	15mA	1.75V	7.5A	12A	20mA	500µA	120A, 132A	Standard Recovery	-40°C ~ 125°C	Through Hole	TO-220-3	TO-220AB
BT151-800R,127	WeEn Semiconductors	THYRISTOR 12A 800V TO220AB	в производстве	800V	1.5V	15mA	1.75V	7.5A	12A	20mA	500µA	120A, 132A	Standard Recovery	-40°C ~ 125°C	Through Hole	TO-220-3	TO-220AB
BT152-600R,127	WeEn Semiconductors	THYRISTOR 20A 650V TO220AB	в производстве	650V	1.5V	32mA	1.75V	13A	20A	60mA	1mA	200A, 220A	Standard Recovery	-40°C ~ 125°C	Through Hole	TO-220-3	TO-220AB
BT145-800R,127	WeEn Semiconductors	THYRISTOR 25A 800V TO220AB	в производстве	800V	1V	35mA	1.5V	16A	25A	60mA	1mA	300A, 330A	Standard Recovery	-40°C ~ 125°C	Through Hole	TO-220-3	TO-220AB
BT169D,116	WeEn Semiconductors	THYRISTOR 400V 0.8A TO92-3	в производстве	400V	800mV	200µA	1.7V	500mA	800mA	5mA	100µA	8A, 9A	Sensitive Gate	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BT169D,126	WeEn Semiconductors	THYRISTOR 400V 50MA TO92-3	в производстве	400V	800mV	200µA	1.7V	500mA	800mA	5mA	100µA	8A, 9A	Sensitive Gate	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BT169D,112	WeEn Semiconductors	THYRISTOR 400V 0.8A TO92-3	в производстве	400V	800mV	200µA	1.7V	500mA	800mA	5mA	100µA	8A, 9A	Sensitive Gate	125°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BT169G,126	WeEn Semiconductors	THYRISTOR 600V 0.8A SOT54	в производстве	600V	800mV	200µA	1.7V	500mA	800mA	5mA	100µA	8A, 9A	Sensitive Gate	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BT169G,112	WeEn Semiconductors	THYRISTOR .8A 600V TO-92	в производстве	600V	800mV	200µA	1.7V	500mA	800mA	5mA	100µA	8A, 9A	Sensitive Gate	125°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BT149D,126	WeEn Semiconductors	THYRISTOR 400V 0.8A SOT54	в производстве	400V	800mV	200µA	1.7V	500mA	800mA	5mA	100µA	8A, 9A	Sensitive Gate	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BT168GW,115	WeEn Semiconductors	THYRISTOR 1A 600V SOT-223	в производстве	600V	800mV	200µA	1.7V	630mA	1A	5mA	100µA	8A, 9A	Sensitive Gate	-40°C ~ 125°C	SMD Поверхностный монтаж	TO-261-4, TO-261AA	SOT-223
BT168GWF,115	WeEn Semiconductors	SCR SENS 600V 1A SOT-223	в производстве	600V	800mV	450µA	1.7V	630mA	1A	10mA	100µA	8A, 9A	Sensitive Gate	-	SMD Поверхностный монтаж	TO-261-4, TO-261AA	SOT-223
BT169G-L,412	WeEn Semiconductors	THYRISTOR 600V SOT54	в производстве	-	-	-	-	-	-	-	-	-	-	-	-	-	-
EC103D1,412	WeEn Semiconductors	THYRISTOR GATE 400V 0.8A TO92	в производстве	400V	800mV	12µA	1.35V	500mA	800mA	5mA	100µA	8A, 9A	Sensitive Gate	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BT169D/01,112	WeEn Semiconductors	THYRISTOR 400V 50MA TO92-3	в производстве	400V	800mV	200µA	1.7V	500mA	800mA	5mA	100µA	8A, 9A	Sensitive Gate	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BT149D,112	WeEn Semiconductors	THYRISTOR 400V 0.8A TO92	в производстве	400V	800mV	200µA	1.7V	500mA	800mA	5mA	100µA	8A, 9A	Sensitive Gate	125°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BT169GEP	WeEn Semiconductors	BT169G/TO-92/STANDARD MARKING	в производстве	600V	800mV	200µA	1.7V	500mA	800mA	5mA	100µA	8A, 9A	Sensitive Gate	125°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BT168G,112	WeEn Semiconductors	THYRISTOR .8A 600V TO-92	в производстве	600V	800mV	200µA	1.7V	500mA	800mA	5mA	100µA	8A, 9A	Sensitive Gate	125°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BT148-600R,127	WeEn Semiconductors	THYRISTOR 600V 4A SOT82	в производстве	600V	1.5V	200µA	1.8V	2.5A	4A	6mA	500µA	35A, 38A	Sensitive Gate	-40°C ~ 125°C	Through Hole	SOT-82	SOT-82-3
BT150-500R,127	WeEn Semiconductors	THYRISTOR 500V 4A TO220AB	в производстве	500V	1.5V	200µA	1.8V	2.5A	4A	6mA	500µA	35A, 38A	Sensitive Gate	-40°C ~ 125°C	Through Hole	TO-220-3	TO-220AB
BT151X-500RNQ	WeEn Semiconductors	BT151X-500RN/TO-220F/STANDARD	в производстве	500V	-	-	-	-	-	-	-	-	Standard Recovery	-	Through Hole	TO-220-3 Full Pack, Isolated Tab	TO-220-3
BT151X-500R,127	WeEn Semiconductors	THYRISTOR 500V 12A SOT186A	в производстве	500V	1.5V	15mA	1.75V	7.5A	12A	20mA	500µA	120A, 132A	Standard Recovery	-40°C ~ 125°C	Through Hole	TO-220-3 Full Pack, Isolated Tab	TO-220-3
BT151X-800R/DG,127	WeEn Semiconductors	THYRISTOR 800V 12A TO-220F	в производстве	800V	1.5V	15mA	1.75V	7.5A	12A	20mA	500µA	120A, 132A	Standard Recovery	-40°C ~ 125°C	Through Hole	TO-220-3 Full Pack, Isolated Tab	TO-220F
BT151X-800R,127	WeEn Semiconductors	THYRISTOR 800V 12A SOT186A	в производстве	800V	1.5V	15mA	1.75V	7.5A	12A	20mA	500µA	120A, 132A	Standard Recovery	-40°C ~ 125°C	Through Hole	TO-220-3 Full Pack, Isolated Tab	TO-220-3
BT151-500RT,127	WeEn Semiconductors	THYRISTOR 12A 500V TO220AB	в производстве	500V	1.5V	15mA	1.75V	8A	12.5A	20mA	500µA	120A, 132A	Standard Recovery	-40°C ~ 125°C	Through Hole	TO-220-3	TO-220AB
TYN16X-600CTNQ	WeEn Semiconductors	TYN16X-600CTN/TO-220F/STANDARD	в производстве	-	-	-	-	-	-	-	-	-	Standard Recovery	-	Through Hole	TO-220-3 Full Pack, Isolated Tab	TO-220-3
BT258-500R,127	WeEn Semiconductors	THYRISTOR 500V 8A TO220AB	в производстве	500V	1.5V	200µA	1.6V	5A	8A	6mA	500µA	75A, 82A	Sensitive Gate	-40°C ~ 125°C	Through Hole	TO-220-3	TO-220AB
BT258-600R,127	WeEn Semiconductors	THYRISTOR 600V 8A TO220AB	в производстве	600V	1.5V	200µA	1.6V	5A	8A	6mA	500µA	75A, 82A	Sensitive Gate	-40°C ~ 125°C	Through Hole	TO-220-3	TO-220AB
BT152-400R,127	WeEn Semiconductors	THYRISTOR 20A 450V TO220AB	в производстве	450V	1.5V	32mA	1.75V	13A	20A	60mA	1mA	200A, 220A	Standard Recovery	-40°C ~ 125°C	Through Hole	TO-220-3	TO-220AB
BT152X-800R,127	WeEn Semiconductors	THYRISTOR 800V 20A SOT186A	в производстве	800V	1.5V	32mA	1.75V	13A	20A	60mA	1mA	200A, 220A	Standard Recovery	-40°C ~ 125°C	Through Hole	TO-220-3 Full Pack, Isolated Tab	TO-220-3
BT155W-1200TQ	WeEn Semiconductors	SCR 1200V 79A TO247-3	в производстве	1.2kV	1V	50mA	1.5V	50A	79A	200mA	3mA	650A, 715A	Standard Recovery	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
BT169B,126	WeEn Semiconductors	THYRISTOR 200V 0.8A SOT54	в производстве	200V	800mV	200µA	1.7V	500mA	800mA	5mA	100µA	8A, 9A	Sensitive Gate	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BT152B-800R,118	WeEn Semiconductors	THYRISTOR 800V 20A D2PAK	в производстве	800V	1.5V	32mA	1.75V	13A	20A	60mA	1mA	200A, 220A	Standard Recovery	-40°C ~ 125°C	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK
BT151S-500R,118	WeEn Semiconductors	THYRISTOR 500V 12A DPAK	в производстве	500V	1.5V	15mA	1.75V	7.5A	12A	20mA	500µA	120A, 132A	Standard Recovery	-40°C ~ 125°C	SMD Поверхностный монтаж	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK
BT151S-800R,118	WeEn Semiconductors	THYRISTOR 800V 12A DPAK	в производстве	800V	1.5V	15mA	1.75V	7.5A	12A	20mA	500µA	120A, 132A	Standard Recovery	-40°C ~ 125°C	SMD Поверхностный монтаж	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK
BT258S-800LT,118	WeEn Semiconductors	SCR LOGIC LEVEL 800V 5A DPAK	в производстве	800V	1.5V	50µA	1.6V	5A	8A	6mA	2.5mA	75A, 82A	Sensitive Gate	-40°C ~ 150°C	SMD Поверхностный монтаж	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK
BT152B-400R,118	WeEn Semiconductors	THYRISTOR 450V 20A D2PAK	в производстве	450V	1.5V	32mA	1.75V	13A	20A	60mA	1mA	200A, 220A	Standard Recovery	-40°C ~ 125°C	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK
BT152B-600R,118	WeEn Semiconductors	THYRISTOR 650V 20A D2PAK	в производстве	650V	1.5V	32mA	1.75V	13A	20A	60mA	1mA	200A, 220A	Standard Recovery	-40°C ~ 125°C	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK
BT152-800R,127	WeEn Semiconductors	THYRISTOR 20A 800V TO220AB	в производстве	800V	1.5V	32mA	1.75V	13A	20A	60mA	1mA	200A, 220A	Standard Recovery	-40°C ~ 125°C	Through Hole	TO-220-3	TO-220AB
BT155K-1200TQ	WeEn Semiconductors	SCR 1200V 79A TO3P-3	в производстве	1.2kV	1V	50mA	1.5V	50A	79A	200mA	3mA	650A, 715A	Standard Recovery	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
EC103D1WX	WeEn Semiconductors	SCR SENS GATE 400V SC-73	в производстве	400V	800mV	12µA	1.35V	500mA	800mA	5mA	100µA	8A, 9A	Sensitive Gate	125°C (TJ)	SMD Поверхностный монтаж	TO-261-4, TO-261AA	SC-73
BT148W-600R,115	WeEn Semiconductors	THYRISTOR 1A 600V SOT-223	в производстве	600V	1.5V	200µA	1.5V	600mA	1A	6mA	500µA	10A, 11A	Sensitive Gate	-40°C ~ 125°C	SMD Поверхностный монтаж	TO-261-4, TO-261AA	SOT-223
BT258-800R,127	WeEn Semiconductors	THYRISTOR 800V 8A TO220AB	в производстве	800V	1.5V	200µA	1.6V	5A	8A	6mA	500µA	75A, 82A	Sensitive Gate	-40°C ~ 125°C	Through Hole	TO-220-3	TO-220AB
BT258S-800R,118	WeEn Semiconductors	THYRISTOR 800V 8A DPAK	в производстве	800V	1.5V	200µA	1.6V	5A	8A	6mA	500µA	75A, 82A	Sensitive Gate	-40°C ~ 150°C	SMD Поверхностный монтаж	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK
BT150S-600R,118	WeEn Semiconductors	THYRISTOR 600V 4A DPAK	в производстве	600V	1V	200µA	1.8V	2.5A	4A	6mA	500µA	35A, 38A	Sensitive Gate	125°C (TJ)	SMD Поверхностный монтаж	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK

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