Microsemi агент по продажам - Транзисторы - биполярные (BJT) - массивы - 2N3810 JANS2N2920

номер части	Производитель / Марка	Краткое описание	Статус детали	Тип транзистора	Ток - коллектор (Ic) (макс.)	Напряжение - Разрыв эмиттера коллектора (макс.)	Vce Saturation (Макс.) @ Ib, Ic	Ток - отсечка коллектора (макс.)	Постоянный ток постоянного тока (hFE) (мин.) @ Ic, Vce	Мощность - макс.	Частота - переход	Рабочая Температура	Тип монтажа	Упаковка / чехол	Пакет устройств поставщика
2N3810	Microsemi Corporation	TRANSISTOR 2PNP 60V 0.05A TO-78	в производстве	2 PNP (Dual)	50mA	60V	250mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
JANS2N2920	Microsemi Corporation	TRANSISTOR 2NPN 60V 0.03A TO-18	Discontinued at -	2 NPN (Dual)	30mA	60V	300mV @ 100µA, 1mA	10µA (ICBO)	300 @ 1mA, 5V	350mW	-	200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
JANTX2N4854	Microsemi Corporation	TRANSISTOR NPN/PNP 40V 0.6A TO78	в производстве	NPN, PNP	600mA	40V	400mV @ 15mA, 150mA	10µA (ICBO)	100 @ 150mA, 10V	600mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
JANTXV2N3810	Microsemi Corporation	TRANSISTOR 2PNP 60V 0.05A TO78	в производстве	2 PNP (Dual)	50mA	60V	250mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
JANTXV2N5794	Microsemi Corporation	TRANSISTOR 2NPN 40V 0.6A TO-78	в производстве	2 NPN (Dual)	600mA	40V	900mV @ 30mA, 300mA	10µA (ICBO)	100 @ 150mA, 10V	600mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
2N3810L	Microsemi Corporation	TRANSISTOR 2PNP 60V 0.05A TO-78	в производстве	2 PNP (Dual)	50mA	60V	250mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
JAN2N3810L	Microsemi Corporation	TRANSISTOR 2PNP 60V 0.05A TO78	в производстве	2 PNP (Dual)	50mA	60V	250mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
JANTX2N3810	Microsemi Corporation	TRANSISTOR 2PNP 60V 0.05A TO78	в производстве	2 PNP (Dual)	50mA	60V	250mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
JANTX2N3810L	Microsemi Corporation	TRANSISTOR 2PNP 60V 0.05A	в производстве	2 PNP (Dual)	50mA	60V	250mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
2N2920	Microsemi Corporation	TRANSISTOR 2NPN 60V 0.03A TO-78	в производстве	2 NPN (Dual)	30mA	60V	300mV @ 100µA, 1mA	10µA (ICBO)	300 @ 1mA, 5V	350mW	-	200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
2N3810U	Microsemi Corporation	TRANSISTOR 2PNP 60V 0.05A TO-78	в производстве	2 PNP (Dual)	50mA	60V	250mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
2N2919	Microsemi Corporation	TRANSISTOR 2NPN 60V 0.03A TO78	в производстве	2 NPN (Dual)	30mA	60V	300mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
2N2060L	Microsemi Corporation	TRANSISTOR 2NPN 60V 0.5A TO78	в производстве	2 NPN (Dual)	500mA	60V	300mV @ 5mA, 50mA	10µA (ICBO)	50 @ 10mA, 5V	2.12W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
2N2919L	Microsemi Corporation	TRANSISTOR 2NPN 60V 0.03A TO78	в производстве	2 NPN (Dual)	30mA	60V	300mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
2N2920L	Microsemi Corporation	TRANSISTOR 2NPN 60V 0.03A TO78	в производстве	2 NPN (Dual)	30mA	60V	300mV @ 100µA, 1mA	10µA (ICBO)	300 @ 1mA, 5V	350mW	-	200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
JAN2N2919L	Microsemi Corporation	TRANSISTOR 2NPN 60V 0.03A TO78	в производстве	2 NPN (Dual)	30mA	60V	300mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
JAN2N2920L	Microsemi Corporation	TRANSISTOR 2NPN 60V 0.03A TO78	в производстве	2 NPN (Dual)	30mA	60V	300mV @ 100µA, 1mA	10µA (ICBO)	300 @ 1mA, 5V	350mW	-	200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
2N5795	Microsemi Corporation	TRANSISTOR 2PNP 60V 0.6A TO-78	в производстве	2 PNP (Dual)	600mA	60V	1.6V @ 50mA, 500mA	10µA (ICBO)	40 @ 150mA, 10V	600mW	-	-65°C ~ 175°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
JANTX2N2920	Microsemi Corporation	NPN TRANSISTOR	в производстве	2 NPN (Dual)	30mA	60V	300mV @ 100µA, 1mA	10µA (ICBO)	300 @ 1mA, 5V	350mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
JAN2N3810U	Microsemi Corporation	TRANSISTOR 2PNP 60V 0.05A	в производстве	2 PNP (Dual)	50mA	60V	250mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
JANTXV2N3810L	Microsemi Corporation	TRANSISTOR 2PNP 60V 0.05A	в производстве	2 PNP (Dual)	50mA	60V	250mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
JANTX2N3810U	Microsemi Corporation	TRANSISTOR 2PNP 60V 0.05A	в производстве	2 PNP (Dual)	50mA	60V	250mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
JANTX2N2919L	Microsemi Corporation	TRANSISTOR 2NPN 60V 0.03A TO78	в производстве	2 NPN (Dual)	30mA	60V	300mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
2N2920U	Microsemi Corporation	PNP TRANSISTOR	в производстве	2 NPN (Dual)	30mA	60V	300mV @ 100µA, 1mA	10µA (ICBO)	300 @ 1mA, 5V	350mW	-	-65°C ~ 200°C (TJ)	SMD Поверхностный монтаж	6-SMD, No Lead	6-SMD
2N3838	Microsemi Corporation	TRANSISTOR NPN/PNP 40V 0.6A 6 PFLTPK	в производстве	NPN, PNP	600mA	40V	400mV @ 15mA, 150mA	10µA (ICBO)	100 @ 150mA, 10V	350mW	-	-65°C ~ 200°C (TJ)	SMD Поверхностный монтаж	6-FlatPack	6-Flatpack
JANTXV2N2920	Microsemi Corporation	TRANSISTOR 2NPN 60V 0.03A TO-78	в производстве	2 NPN (Dual)	30mA	60V	-	-	-	-	-	200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
JANTXV2N2919	Microsemi Corporation	TRANSISTOR 2NPN 60V 0.03A TO78	в производстве	2 NPN (Dual)	30mA	60V	300mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
JANTXV2N2919L	Microsemi Corporation	TRANSISTOR 2NPN 60V 0.03A TO78	в производстве	2 NPN (Dual)	30mA	60V	300mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
JANTXV2N2920L	Microsemi Corporation	TRANSISTOR 2NPN 60V 0.03A TO78	в производстве	2 NPN (Dual)	30mA	60V	300mV @ 100µA, 1mA	10µA (ICBO)	300 @ 1mA, 5V	350mW	-	200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
2N6987	Microsemi Corporation	TRANSISTOR 4PNP 60V 0.6A TO116	в производстве	4 PNP (Quad)	600mA	60V	1.6V @ 50mA, 500mA	10µA (ICBO)	100 @ 150mA, 10V	1.5W	-	-65°C ~ 200°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	TO-116
2N6988	Microsemi Corporation	TRANSISTOR 4PNP 60V 0.6A 14FLATPACK	в производстве	4 PNP (Quad)	600mA	60V	1.6V @ 50mA, 500mA	10µA (ICBO)	100 @ 150mA, 10V	400mW	-	-65°C ~ 200°C (TJ)	SMD Поверхностный монтаж	14-Flatpack	14-Flatpack
2N6990	Microsemi Corporation	TRANSISTOR 4NPN 50V 0.8A	в производстве	4 NPN (Quad)	800mA	50V	1V @ 50mA, 500mA	10µA (ICBO)	100 @ 150mA, 10V	400mW	-	-65°C ~ 200°C (TJ)	SMD Поверхностный монтаж	14-Flatpack	14-Flatpack
JAN2N6988	Microsemi Corporation	TRANSISTOR 4PNP 60V 0.6A	в производстве	4 PNP (Quad)	600mA	60V	1.6V @ 50mA, 500mA	10µA (ICBO)	100 @ 150mA, 10V	400mW	-	-65°C ~ 200°C (TJ)	SMD Поверхностный монтаж	14-Flatpack	14-Flatpack
JAN2N6989	Microsemi Corporation	TRANSISTOR 4NPN 50V 0.8A TO116	в производстве	4 NPN (Quad)	800mA	50V	1V @ 50mA, 500mA	10µA (ICBO)	100 @ 150mA, 10V	1.5W	-	-65°C ~ 200°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	TO-116
JAN2N6990	Microsemi Corporation	TRANSISTOR 4NPN 50V 0.8A 14PIN	в производстве	4 NPN (Quad)	800mA	50V	1V @ 50mA, 500mA	10µA (ICBO)	100 @ 150mA, 10V	400mW	-	-65°C ~ 200°C (TJ)	SMD Поверхностный монтаж	14-Flatpack	14-Flatpack
2N2919U	Microsemi Corporation	TRANSISTOR 2NPN 60V 0.03A	в производстве	2 NPN (Dual)	30mA	60V	300mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	200°C (TJ)	SMD Поверхностный монтаж	3-SMD, No Lead	3-SMD
JAN2N2919U	Microsemi Corporation	TRANSISTOR 2NPN 60V 0.03A	в производстве	2 NPN (Dual)	30mA	60V	300mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	200°C (TJ)	SMD Поверхностный монтаж	3-SMD, No Lead	3-SMD
JAN2N2920U	Microsemi Corporation	TRANSISTOR 2NPN 60V 0.03A	в производстве	2 NPN (Dual)	30mA	60V	300mV @ 100µA, 1mA	10µA (ICBO)	300 @ 1mA, 5V	350mW	-	200°C (TJ)	SMD Поверхностный монтаж	3-SMD, No Lead	3-SMD
JANTXV2N3810U	Microsemi Corporation	TRANSISTOR 2PNP 60V 0.05A	в производстве	2 PNP (Dual)	50mA	60V	250mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
JANTX2N6989	Microsemi Corporation	TRANSISTOR 4NPN 50V 0.8A TO116	в производстве	4 NPN (Quad)	800mA	50V	1V @ 50mA, 500mA	10µA (ICBO)	100 @ 150mA, 10V	1.5W	-	-65°C ~ 200°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	TO-116
JANTX2N2920U	Microsemi Corporation	NPN TRANSISTOR	в производстве	2 NPN (Dual)	30mA	60V	300mV @ 100µA, 1mA	10µA (ICBO)	300 @ 1mA, 5V	350mW	-	-65°C ~ 200°C (TJ)	SMD Поверхностный монтаж	6-SMD, No Lead	6-SMD
JAN2N6987	Microsemi Corporation	TRANSISTOR 4PNP 60V 0.6A TO116	в производстве	4 PNP (Quad)	600mA	60V	1.6V @ 50mA, 500mA	10µA (ICBO)	100 @ 150mA, 10V	1.5W	-	-65°C ~ 200°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	-
JANTX2N6987	Microsemi Corporation	TRANSISTOR 4PNP 60V 0.6A TO116	в производстве	4 PNP (Quad)	600mA	60V	1.6V @ 50mA, 500mA	10µA (ICBO)	100 @ 150mA, 10V	1.5W	-	-65°C ~ 200°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	-
JANTXV2N6987	Microsemi Corporation	TRANSISTOR 4PNP 60V 0.6A TO116	в производстве	4 PNP (Quad)	600mA	60V	1.6V @ 50mA, 500mA	10µA (ICBO)	100 @ 150mA, 10V	1.5W	-	-65°C ~ 200°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	-
JANTXV2N6988	Microsemi Corporation	TRANSISTOR 4PNP 60V 0.6A	в производстве	4 PNP (Quad)	600mA	60V	1.6V @ 50mA, 500mA	10µA (ICBO)	100 @ 150mA, 10V	400mW	-	-65°C ~ 200°C (TJ)	SMD Поверхностный монтаж	14-Flatpack	14-Flatpack
JANTXV2N6989	Microsemi Corporation	TRANSISTOR 4NPN 50V 0.8A TO116	в производстве	4 NPN (Quad)	800mA	50V	1V @ 50mA, 500mA	10µA (ICBO)	100 @ 150mA, 10V	1.5W	-	-65°C ~ 200°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	TO-116
JANTX2N2919U	Microsemi Corporation	TRANSISTOR 2NPN 60V 0.03A	в производстве	2 NPN (Dual)	30mA	60V	300mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	200°C (TJ)	SMD Поверхностный монтаж	3-SMD, No Lead	3-SMD
JAN2N2060L	Microsemi Corporation	TRANSISTOR 2NPN 60V 0.5A TO78	в производстве	2 NPN (Dual)	500mA	60V	300mV @ 5mA, 50mA	10µA (ICBO)	50 @ 10mA, 5V	2.12W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
JANTXV2N2919U	Microsemi Corporation	TRANSISTOR 2NPN 60V 0.03A	в производстве	2 NPN (Dual)	30mA	60V	300mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	200°C (TJ)	SMD Поверхностный монтаж	3-SMD, No Lead	3-SMD
JANTXV2N6990	Microsemi Corporation	TRANSISTOR 4NPN 50V 0.8A 14PIN	Discontinued at -	4 NPN (Quad)	800mA	50V	1V @ 50mA, 500mA	10µA (ICBO)	100 @ 150mA, 10V	400mW	-	-65°C ~ 200°C (TJ)	SMD Поверхностный монтаж	14-Flatpack	14-Flatpack

Производители для Транзисторы - биполярные (BJT) - массивы