номер части Производитель / Марка Краткое описание Статус деталиТип логикиКоличество схемКоличество входовОсобенностиНапряжение - ПоставкаCurrent - Quiescent (Max)Ток - выход высокий, низкийУровень логики - низкийУровень логики - высокийМакс. Задержка распространения @ V, Макс. CLРабочая ТемператураТип монтажаПакет устройств поставщикаУпаковка / чехол
Toshiba Semiconductor and Storage IC INVERTER SCHMITT 3CH SM8 в производствеInverter33Schmitt Trigger2 V ~ 5.5 V2µA8mA, 8mA0.9 V ~ 1.65 V2.2 V ~ 3.85 V10.6ns @ 5V, 50pF-40°C ~ 85°CSMD Поверхностный монтажSM88-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Toshiba Semiconductor and Storage IC INVERTER SCHMITT 6CH 14TSSOPB в производствеInverter66Schmitt Trigger2 V ~ 5.5 V2µA8mA, 8mA0.1 V ~ 0.36V2 V ~ 4.5 V10.6ns @ 5V, 50pF-40°C ~ 125°C (TA)SMD Поверхностный монтаж14-TSSOPB14-TSSOP (0.173", 4.40mm Width)
Toshiba Semiconductor and Storage IC INVERTER SCHMITT 3CH SSOP8 в производствеInverter33Schmitt Trigger2 V ~ 6 V1µA5.2mA, 5.2mA0.3 V ~ 1.5 V1.5 V ~ 4.2 V21ns @ 6V, 50pF-40°C ~ 85°CSMD Поверхностный монтаж8-SSOP-P8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Toshiba Semiconductor and Storage IC GATE AND 2CH 2-INP SM8 в производствеAND Gate22
-
2 V ~ 6 V1µA5.2mA, 5.2mA0.5 V ~ 1.8 V1.5 V ~ 4.2 V13ns @ 6V, 50pF-40°C ~ 85°CSMD Поверхностный монтажSM88-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Toshiba Semiconductor and Storage IC INVERTER SCHMITT 1CH USV в производствеInverter11Schmitt Trigger1.65 V ~ 5.5 V1µA32mA, 32mA0.2 V ~ 1.2 V1.4 V ~ 3.6 V5.9ns @ 5V, 50pF-40°C ~ 85°CSMD Поверхностный монтажUSV5-TSSOP, SC-70-5, SOT-353
Toshiba Semiconductor and Storage IC GATE NAND 1CH 2-INP ESV в производствеNAND Gate12
-
1.65 V ~ 5.5 V2µA32mA, 32mA
-
-
3.6ns @ 5V, 50pF-40°C ~ 85°CSMD Поверхностный монтажESVSOT-553
Toshiba Semiconductor and Storage IC INVERTER 1CH 1-INP USV в производствеInverter11
-
2 V ~ 6 V1µA2.6mA, 2.6mA0.3 V ~ 1.2 V1.7 V ~ 4.8 V17ns @ 6V, 50pF-40°C ~ 85°CSMD Поверхностный монтажUSV5-TSSOP, SC-70-5, SOT-353
Toshiba Semiconductor and Storage IC INVERTER SCHMITT 1CH SMV в производствеInverter11Schmitt Trigger3 V ~ 18 V4µA3.4mA, 3.4mA1.1 V ~ 3.3 V3.35 V ~ 10.6 V120ns @ 15V, 50pF-40°C ~ 85°CSMD Поверхностный монтажSMVSC-74A, SOT-753
Toshiba Semiconductor and Storage IC INVERTER 1CH 1-INP FSV в производствеInverter11
-
1.65 V ~ 5.5 V2µA32mA, 32mA
-
-
3.6ns @ 5V, 50pF-40°C ~ 125°CSMD Поверхностный монтажfSVSOT-953
Toshiba Semiconductor and Storage IC INVERTER OD 1CH 1-INP SMV в производствеInverter11Open Drain1.8 V ~ 5.5 V2µA-, 32mA
-
-
4.3ns @ 5V, 50pF-40°C ~ 85°CSMD Поверхностный монтажSMVSC-74A, SOT-753
Toshiba Semiconductor and Storage IC INVERTER SCHMITT 1CH ESV в производствеInverter11Schmitt Trigger1.65 V ~ 5.5 V2µA32mA, 32mA0.2 V ~ 1.2 V1.4 V ~ 3.6 V5.9ns @ 5V, 50pF-40°C ~ 85°CSMD Поверхностный монтажESVSOT-553
Toshiba Semiconductor and Storage IC GATE NOR 1CH 2-INP USV в производствеNOR Gate12
-
2 V ~ 6 V1µA2.6mA, 2.6mA0.5 V ~ 1.8 V1.5 V ~ 4.2 V17ns @ 6V, 50pF-40°C ~ 85°CSMD Поверхностный монтажUSV5-TSSOP, SC-70-5, SOT-353
Toshiba Semiconductor and Storage IC GATE NOR 1CH 2-INP SMV в производствеNOR Gate12
-
2 V ~ 5.5 V2µA8mA, 8mA0.5V1.5V7.5ns @ 5V, 50pF-40°C ~ 85°CSMD Поверхностный монтажSMVSC-74A, SOT-753
Toshiba Semiconductor and Storage IC GATE NAND 1CH 2-INP SMV в производствеNAND Gate12
-
2 V ~ 6 V1µA2.6mA, 2.6mA0.5 V ~ 1.8 V1.5 V ~ 4.2 V17ns @ 6V, 50pF-40°C ~ 85°CSMD Поверхностный монтажSMVSC-74A, SOT-753
Toshiba Semiconductor and Storage IC GATE NOR 1CH 2-INP SMV в производствеNOR Gate12
-
2 V ~ 6 V1µA2.6mA, 2.6mA0.5 V ~ 1.8 V1.5 V ~ 4.2 V17ns @ 6V, 50pF-40°C ~ 85°CSMD Поверхностный монтажSMVSC-74A, SOT-753
Toshiba Semiconductor and Storage IC GATE NAND 2CH 2-INP SM8 в производствеNAND Gate22
-
2 V ~ 5.5 V2µA8mA, 8mA0.5V1.5V7.5ns @ 5V, 50pF-40°C ~ 85°CSMD Поверхностный монтажSM88-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Toshiba Semiconductor and Storage IC GATE OR 2CH 2-INP US8 в производствеOR Gate22
-
2 V ~ 5.5 V2µA8mA, 8mA
-
-
7.5ns @ 5V, 50pF-40°C ~ 125°CSMD Поверхностный монтажUS88-VFSOP (0.091", 2.30mm Width)
Toshiba Semiconductor and Storage IC GATE OR 2CH 2-INP SM8 в производствеOR Gate22
-
2 V ~ 5.5 V2µA8mA, 8mA
-
-
7.5ns @ 5V, 50pF-40°C ~ 85°CSMD Поверхностный монтажSM88-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Toshiba Semiconductor and Storage IC GATE NAND 2CH 4-INP US8 в производствеNAND Gate24
-
2 V ~ 5.5 V2µA8mA, 8mA
-
-
7.5ns @ 5V, 50pF-40°C ~ 125°CSMD Поверхностный монтажUS88-VFSOP (0.091", 2.30mm Width)
Toshiba Semiconductor and Storage IC GATE AND 2CH 2-INP SM8 в производствеAND Gate22
-
2 V ~ 5.5 V2µA8mA, 8mA
-
-
7.9ns @ 5V, 50pF-40°C ~ 85°CSMD Поверхностный монтажSM88-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Toshiba Semiconductor and Storage IC INVERTER 3CH 3-INP US8 в производствеInverter33
-
2 V ~ 5.5 V2µA8mA, 8mA0.9 V ~ 1.65 V2.2 V ~ 3.85 V10.6ns @ 5V, 50pF-40°C ~ 125°CSMD Поверхностный монтажUS88-VFSOP (0.091", 2.30mm Width)
Toshiba Semiconductor and Storage IC INVERTER 3CH 3-INP US8 в производствеInverter33
-
2 V ~ 5.5 V2µA8mA, 8mA0.3V1.7V7ns @ 5V, 50pF-40°C ~ 125°CSMD Поверхностный монтажUS88-VFSOP (0.091", 2.30mm Width)
Toshiba Semiconductor and Storage IC INVERTER 3CH 3-INP SM8 в производствеInverter33
-
2 V ~ 5.5 V2µA8mA, 8mA0.3V1.7V7ns @ 5V, 50pF-40°C ~ 85°CSMD Поверхностный монтажSM88-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Toshiba Semiconductor and Storage IC GATE AND 2CH 4-INP US8 в производствеAND Gate24
-
1.65 V ~ 5.5 V1µA32mA, 32mA
-
-
3.7ns @ 5V, 50pF-40°C ~ 125°CSMD Поверхностный монтажUS88-VFSOP (0.091", 2.30mm Width)
Toshiba Semiconductor and Storage IC GATE OR 2CH 4-INP US8 в производствеOR Gate24
-
1.65 V ~ 5.5 V1µA32mA, 32mA
-
-
3.7ns @ 5V, 50pF-40°C ~ 125°CSMD Поверхностный монтажUS88-VFSOP (0.091", 2.30mm Width)
Toshiba Semiconductor and Storage IC INVERTER 3CH 3-INP US8 устарелыйInverter33
-
1.65 V ~ 5.5 V10µA32mA, 32mA
-
-
3.6ns @ 5V, 50pF-40°C ~ 125°CSMD Поверхностный монтажUS88-VSSOP, 8-MSOP (0.118", 3.00mm Width)
Toshiba Semiconductor and Storage IC INVERTER SCHMITT 6CH 14TSSOP в производствеInverter66Schmitt Trigger1.65 V ~ 3.6 V10µA24mA, 24mA0.3 V ~ 0.6 V1.35 V ~ 2.2 V6.5ns @ 3.3V, 50pF-40°C ~ 85°CSMD Поверхностный монтаж14-TSSOP14-TSSOP (0.173", 4.40mm Width)
Toshiba Semiconductor and Storage IC INVERTER SCHMITT 6CH 14TSSOP в производствеInverter66Schmitt Trigger2 V ~ 5.5 V2µA8mA, 8mA0.9 V ~ 1.65 V2.2 V ~ 3.85 V10.6ns @ 5V, 50pF-40°C ~ 125°CSMD Поверхностный монтаж14-TSSOP14-TSSOP (0.173", 4.40mm Width)
Toshiba Semiconductor and Storage IC GATE NAND 4CH 2-INP 14TSSOP в производствеNAND Gate42Open Drain2 V ~ 5.5 V2µA-, 8mA0.5V1.5V7.5ns @ 5V, 50pF-40°C ~ 85°CSMD Поверхностный монтаж14-TSSOP14-TSSOP (0.173", 4.40mm Width)
Toshiba Semiconductor and Storage IC GATE AND 4CH 2-INP 14TSSOP в производствеAND Gate42
-
1.65 V ~ 3.6 V10µA24mA, 24mA0.7 V ~ 0.8 V1.7 V ~ 2 V5.5ns @ 3.3V, 50pF-40°C ~ 85°CSMD Поверхностный монтаж14-TSSOP14-TSSOP (0.173", 4.40mm Width)
Toshiba Semiconductor and Storage IC GATE AND 4CH 2-INP 14TSSOP в производствеAND Gate42
-
2 V ~ 5.5 V2µA8mA, 8mA0.5V1.5V7.9ns @ 5V, 50pF-40°C ~ 85°CSMD Поверхностный монтаж14-TSSOP14-TSSOP (0.173", 4.40mm Width)
Toshiba Semiconductor and Storage IC GATE OR 4CH 2-INP 14TSSOP в производствеOR Gate42
-
2 V ~ 5.5 V2µA8mA, 8mA0.5V1.5V7.5ns @ 5V, 50pF-40°C ~ 85°CSMD Поверхностный монтаж14-TSSOP14-TSSOP (0.173", 4.40mm Width)
Toshiba Semiconductor and Storage IC GATE XOR 4CH 2-INP 14TSSOP в производствеXOR (Exclusive OR)42
-
2 V ~ 5.5 V2µA8mA, 8mA0.5V1.5V8.8ns @ 5V, 50pF-40°C ~ 85°CSMD Поверхностный монтаж14-TSSOP14-TSSOP (0.173", 4.40mm Width)
Toshiba Semiconductor and Storage IC GATE NAND 4CH 2-INP 14TSSOP в производствеNAND Gate42
-
2 V ~ 5.5 V2µA8mA, 8mA0.5V1.5V7.5ns @ 5V, 50pF-40°C ~ 85°CSMD Поверхностный монтаж14-TSSOP14-TSSOP (0.173", 4.40mm Width)
Toshiba Semiconductor and Storage IC INVERTER 6CH 6-INP 14TSSOPB в производствеInverter66
-
2 V ~ 5.5 V2µA8mA, 8mA
-
-
7.5ns @ 5V, 50pF-40°C ~ 125°CSMD Поверхностный монтаж14-TSSOPB14-TSSOP (0.173", 4.40mm Width)
Toshiba Semiconductor and Storage IC INVERTER 3CH 3-INP SM8 в производствеInverter33
-
2 V ~ 6 V1µA5.2mA, 5.2mA0.5 V ~ 1.8 V1.5 V ~ 4.2 V13ns @ 6V, 50pF-40°C ~ 85°CSMD Поверхностный монтажSM88-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Toshiba Semiconductor and Storage IC GATE NAND 2CH 4-INP US8 в производствеNAND Gate22
-
2 V ~ 6 V1µA5.2mA, 5.2mA0.5 V ~ 1.8 V1.5 V ~ 4.2 V13ns @ 6V, 50pF-40°C ~ 85°CSMD Поверхностный монтажUS88-VFSOP (0.091", 2.30mm Width)
Toshiba Semiconductor and Storage IC INVERTER 3CH 3-INP SM8 в производствеInverter33
-
2 V ~ 6 V1µA5.2mA, 5.2mA0.3 V ~ 1.2 V1.7 V ~ 4.8 V10ns @ 6V, 50pF-40°C ~ 85°CSMD Поверхностный монтажSM88-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Toshiba Semiconductor and Storage IC GATE NAND 2CH 2-INP SM8 в производствеNAND Gate22
-
2 V ~ 6 V1µA5.2mA, 5.2mA0.5 V ~ 1.8 V1.5 V ~ 4.2 V13ns @ 6V, 50pF-40°C ~ 85°CSMD Поверхностный монтажSM88-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Toshiba Semiconductor and Storage IC INVERTER 6CH 6-INP 14TSSOP устарелыйInverter66
-
4.5 V ~ 5.5 V4µA24mA, 24mA0.8V2V7.9ns @ 5V, 50pF-40°C ~ 85°CSMD Поверхностный монтаж14-TSSOP14-TSSOP (0.173", 4.40mm Width)
Toshiba Semiconductor and Storage IC GATE NAND 2CH 2-INP US8 устарелыйNAND Gate22
-
2 V ~ 6 V1µA5.2mA, 5.2mA0.5 V ~ 1.8 V1.5 V ~ 4.2 V13ns @ 6V, 50pF-40°C ~ 85°CSMD Поверхностный монтажUS88-VFSOP (0.091", 2.30mm Width)
Toshiba Semiconductor and Storage IC INVERTER 6CH 6-INP 14VSSOP устарелыйInverter66
-
2 V ~ 5.5 V2µA8mA, 8mA
-
-
7.5ns @ 5V, 50pF-40°C ~ 85°CSMD Поверхностный монтаж14-VSSOP14-VFSOP (0.118", 3.00mm Width)
Toshiba Semiconductor and Storage IC INVERTER 6CH 6-INP 14SOP устарелыйInverter66
-
2 V ~ 6 V1µA5.2mA, 5.2mA0.5 V ~ 1.8 V1.5 V ~ 4.2 V13ns @ 6V, 50pF-40°C ~ 85°CSMD Поверхностный монтаж14-SOP14-SOIC (0.173", 4.40mm Width)
Toshiba Semiconductor and Storage IC INVERTER SCHMITT 6CH 14SOP устарелыйInverter66Schmitt Trigger2 V ~ 6 V1µA5.2mA, 5.2mA0.3 V ~ 1.5 V1.5 V ~ 4.2 V21ns @ 6V, 50pF-40°C ~ 85°CSMD Поверхностный монтаж14-SOP14-SOIC (0.173", 4.40mm Width)
Toshiba Semiconductor and Storage IC GATE AND 1CH 2-INP SMV устарелыйAND Gate12
-
2 V ~ 5.5 V2µA8mA, 8mA0.5V1.5V7.9ns @ 5V, 50pF-40°C ~ 85°CSMD Поверхностный монтажSMVSC-74A, SOT-753
Toshiba Semiconductor and Storage IC GATE NOR 1CH 2-INP USV Discontinued at -NOR Gate12
-
2 V ~ 6 V1µA2.6mA, 2.6mA0.5 V ~ 1.8 V1.5 V ~ 4.2 V17ns @ 6V, 50pF-40°C ~ 85°CSMD Поверхностный монтажUSV5-TSSOP, SC-70-5, SOT-353
Toshiba Semiconductor and Storage IC GATE NOR 2CH 2-INP US8 Discontinued at -NOR Gate22
-
2 V ~ 6 V1µA5.2mA, 5.2mA0.5 V ~ 1.8 V1.5 V ~ 4.2 V13ns @ 6V, 50pF-40°C ~ 85°CSMD Поверхностный монтажUS88-VFSOP (0.091", 2.30mm Width)
Toshiba Semiconductor and Storage IC INVERTER 6CH 6-INP 14DIP устарелыйInverter66
-
4.5 V ~ 5.5 V4µA24mA, 24mA0.8V2V7.9ns @ 5V, 50pF-40°C ~ 85°CThrough Hole14-DIP14-DIP (0.300", 7.62mm)
Toshiba Semiconductor and Storage IC GATE AND 4CH 2-INP 14DIP устарелыйAND Gate42
-
4.5 V ~ 5.5 V4µA24mA, 24mA0.8V2V8.7ns @ 5V, 50pF-40°C ~ 85°CThrough Hole14-DIP14-DIP (0.300", 7.62mm)
Toshiba Semiconductor and Storage IC INVERTER SCHMITT 6CH 14DIP устарелыйInverter66Schmitt Trigger4.5 V ~ 5.5 V4µA24mA, 24mA0.8V2V11.4ns @ 5V, 50pF-40°C ~ 85°CThrough Hole14-DIP14-DIP (0.300", 7.62mm)
  1. 1
  2. 2
  3. 3
  4. 4
  5. 5
  6. 6