номер части Производитель / Марка Краткое описание Статус деталиТип IGBTконфигурацияНапряжение - Разрыв эмиттера коллектора (макс.)Ток - коллектор (Ic) (макс.)Мощность - макс.Vce (вкл.) (Макс.) @ Vge, IcТок - отсечка коллектора (макс.)Входная емкость (Cies) @ VceвходТермистор NTCРабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
IXYS IGBT 1200V 95A SOT-227 в производствеPTSingle1200V95A460W4.2V @ 15V, 40A250µA4.3nF @ 25VStandardNo-55°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227B
Vishay Semiconductor Diodes Division IGBT 600V 70A HS CHOPPER SOT-227 в производствеNPTSingle600V109A447W2V @ 15V, 35A50µA
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StandardNo-40°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
IXYS IGBT 1200 SOT227B в производстве
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Single1200V240A1200W3.2V @ 15V, 120A25µA
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StandardNo-55°C ~ 175°C (TJ)SMD Поверхностный монтажSOT-227-4, miniBLOCSOT-227B
IXYS IGBT MODULE 1200V 12A HEX в производствеPTThree Phase Inverter1200V17A65W2.1V @ 15V, 9A150µA
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StandardYes-40°C ~ 125°C (TJ)Chassis MountE1E1
Infineon Technologies IGBT MODULE VCES 600V 22A в производствеTrench Field StopThree Phase Inverter600V22A81W2V @ 15V, 15A1mA830pF @ 25VStandardYes-40°C ~ 150°CChassis MountModuleModule
Infineon Technologies IGBT MODULE VCES 600V 22A в производствеTrench Field StopThree Phase Inverter600V22A81W2V @ 15V, 15A1mA830pF @ 25VStandardYes-40°C ~ 150°CChassis MountModuleModule
IXYS IGBT 600V 200A SOT-227 в производствеPTSingle600V200A780W1.7V @ 15V, 100A50µA9.97nF @ 25VStandardNo-55°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227B
IXYS IGBT XPT 1200V 105A SOT-227B в производстве
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Single1200V105A500W3.2V @ 15V, 82A25µA4.1nF @ 25VStandardNo-55°C ~ 175°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227B
IXYS IGBT XPT 1200V 152A SOT-227B в производствеPTSingle1200V165A690W2.6V @ 15V, 100A50µA6nF @ 25VStandardNo-55°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227B
IXYS MODULE IGBT CBI E1 в производствеNPTThree Phase Inverter with Brake600V11A50W3.3V @ 15V, 10A65µA0.22nF @ 25VThree Phase Bridge RectifierYes-40°C ~ 150°C (TJ)Chassis MountE1E1
Microsemi Corporation POWER MOD IGBT4 1200V SOT227 в производствеTrench Field StopSingle1200V45A170W2.4V @ 15V, 25A250µA1.43nF @ 25VStandardNo-55°C ~ 175°C (TJ)Chassis, Stud MountSOT-227-4, miniBLOCSOT-227
Microsemi Corporation IGBT BOOST CHOP 600V 225A SP1 в производствеTrench Field StopSingle600V225A480W1.9V @ 15V, 150A250µA9.2nF @ 25VStandardYes-40°C ~ 175°C (TJ)Chassis MountSP1SP1
Microsemi Corporation IGBT 600V 225A 480W SP1 в производствеTrench Field StopSingle600V225A480W1.9V @ 15V, 150A250µA9.2nF @ 25VStandardYes-40°C ~ 175°C (TJ)Chassis MountSP1SP1
IXYS IC TRANSISTOR BIPO 1700V SOT-227 в производстве
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Single1700V42A312W6V @ 15V, 21A50µA3.5nF @ 25VStandardNo-55°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227B
Microsemi Corporation IGBT PHASE LEG TRENCH 600V SP1 в производствеTrench Field StopHalf Bridge600V100A250W1.9V @ 15V, 75A250µA4.62nF @ 25VStandardYes-40°C ~ 175°C (TJ)Chassis MountSP1SP1
Microsemi Corporation IGBT MOD TRENCH FULL BRIDGE SP1 в производствеTrench Field StopFull Bridge Inverter600V32A62W1.9V @ 15V, 20A250µA1.1nF @ 25VStandardYes-40°C ~ 175°C (TJ)Chassis MountSP1SP1
Vishay Semiconductor Diodes Division MOD IGBT 3PHASE INV 600V SIP в производстве
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No-40°C ~ 150°C (TJ)Through Hole19-SIP (13 Leads), IMS-2IMS-2
Vishay Semiconductor Diodes Division IGBT 1200V 55A LS CHOPPER SOT227 в производствеNPTSingle1200V84A431W
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50µA
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StandardNo-40°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
Vishay Semiconductor Diodes Division IGBT 1200V 55A HS CHOPPER SOT227 в производствеNPTSingle1200V84A431W
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50µA
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StandardNo-40°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
IXYS IGBT XPT 650V 166A SOT-227B в производствеPTSingle650V170A600W1.8V @ 15V, 70A25µA
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StandardNo-55°C ~ 175°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227B
Global Power Technologies Group IGBT 600V 160A SOT227 в производствеTrench Field StopSingle600V160A380W2.5V @ 15V, 80A2mA5.44nF @ 30VStandardNo-55°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
Infineon Technologies IGBT MODULE VCES 600V 20A в производствеTrench Field StopThree Phase Inverter600V29A94W2V @ 15V, 20A1mA1.1nF @ 25VStandardYes-40°C ~ 150°CChassis MountModuleModule
Microsemi Corporation IGBT MOD TRENCH FULL BRIDGE SP1 в производствеTrench Field StopFull Bridge Inverter600V50A90W1.9V @ 15V, 30A250µA1.6nF @ 25VStandardYes-40°C ~ 175°C (TJ)Chassis MountSP1SP1
Infineon Technologies IGBT MODULE VCES 600V 20A в производствеTrench Field StopThree Phase Inverter600V27A94W2V @ 15V, 20A1mA1.1nF @ 25VStandardYes-40°C ~ 150°CChassis MountModuleModule
Vishay Semiconductor Diodes Division IGBT SIP MODULE 600V 6.8A IMS-2 в производстве
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Three Phase Inverter600V13A36W2V @ 15V, 13A250µA1.1nF @ 30VStandardNo-40°C ~ 150°C (TJ)Through Hole19-SIP (13 Leads), IMS-2IMS-2
Infineon Technologies IGBT MODULE VCES 1200V 6A в производствеTrench Field StopThree Phase Inverter1200V12A94W2.25V @ 15V, 6A1mA600pF @ 25VStandardYes-40°C ~ 150°CChassis MountModuleModule
Vishay Semiconductor Diodes Division MOD IGBT 3PHASE INV 600V SIP в производстве
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600V7.2A23W2.2V @ 15V, 3.9A250µA0.53nF @ 30VStandardNo-40°C ~ 150°C (TJ)Through Hole19-SIP (13 Leads), IMS-2IMS-2
IXYS MODULE IGBT CBI E1 в производствеNPTThree Phase Inverter with Brake600V19A75W2.9V @ 15V, 15A600µA0.6nF @ 25VThree Phase Bridge RectifierYes-40°C ~ 125°C (TJ)Chassis MountE1E1
Microsemi Corporation IGBT MOD TRENCH PHASE LEG SP1 в производствеTrench Field StopHalf Bridge1200V55A208W2.1V @ 15V, 35A250µA2.5nF @ 25VStandardYes-40°C ~ 150°C (TJ)Chassis MountSP1SP1
Infineon Technologies MODULE IGBT 1200V EASY1B-2 в производстве
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Vishay Semiconductor Diodes Division MOD IGBT 3PHASE INV 600V SIP в производстве
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No-40°C ~ 150°C (TJ)Through Hole19-SIP (13 Leads), IMS-2IMS-2
Infineon Technologies IGBT MODULE VCES 600V 20A в производствеTrench Field StopThree Phase Inverter600V29A94W2V @ 15V, 20A1mA1.1nF @ 25VStandardYes-40°C ~ 150°CChassis MountModuleModule
Microsemi Corporation MOD IGBT 1200V 110A SP1 в производствеTrench Field StopSingle1200V110A385W2.25V @ 15V, 75A250µA4.4nF @ 25VStandardYes-40°C ~ 175°C (TJ)Chassis MountSP1SP1
Microsemi Corporation IGBT 600V 100A 329W SOT227 устарелыйPTSingle600V100A329W2.7V @ 15V, 50A525µA5.7nF @ 25VStandardNo-55°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCISOTOP®
Microsemi Corporation POWER MODULE - IGBT в производстве
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Boost Chopper650V100A250W2.2V @ 15V, 100A100µA6nF @ 25VStandardYes-40°C ~ 175°C (TJ)Chassis MountModuleSP1
Microsemi Corporation POWER MODULE - IGBT в производстве
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Buck Chopper650V100A250W2.2V @ 15V, 100A100µA6nF @ 25VStandardYes-40°C ~ 175°C (TJ)Chassis MountModuleSP1
Infineon Technologies IGBT MODULE VCES 600V 100A в производствеTrench Field StopThree Phase Inverter1200V20A105W2.25V @ 15V, 10A1mA600pF @ 25VStandardYes-40°C ~ 150°CChassis MountModuleModule
Microsemi Corporation MOD IGBT 600V 32A SP1 в производствеTrench Field StopThree Level Inverter600V32A62W1.9V @ 15V, 20A250µA1.1pF @ 25VStandardNo-40°C ~ 175°C (TJ)Chassis MountSP1SP1
Microsemi Corporation MOD IGBT 600V 80A SP1 в производствеTrench Field StopAsymmetrical Bridge600V80A176W1.9V @ 15V, 50A250µA3.15nF @ 25VStandardYes-40°C ~ 175°C (TJ)Chassis MountSP1SP1
Vishay Semiconductor Diodes Division MOD IGBT 3PHASE INV 600V SIP в производстве
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600V13A36W2.2V @ 15V, 6.8A250µA1.1nF @ 30VStandardNo-40°C ~ 150°C (TJ)Through Hole19-SIP (13 Leads), IMS-2IMS-2
IXYS IGBT MODULE 1200V 84A в производствеPTSingle1200V120A390W2.2V @ 15V, 77A200µA
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StandardNo-40°C ~ 150°C (TJ)Chassis MountV1A-PAKV1A-PAK
Infineon Technologies IGBT MODULE VCES 600V 100A в производствеTrench Field StopThree Phase Inverter1200V20A105W2.25V @ 15V, 10A1mA600pF @ 25VStandardYes-40°C ~ 150°CChassis MountModuleModule
Vishay Semiconductor Diodes Division MODULE MTP SWITCH в производстве
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Three Phase Inverter1200V12A76W
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250µA
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StandardYes-40°C ~ 150°C (TJ)Chassis Mount12-MTP ModuleMTP
Microsemi Corporation IGBT MOD TRENCH DL BST CHOP SP3 в производствеTrench Field StopDual Boost Chopper600V80A176W1.9V @ 15V, 50A250µA3.15nF @ 25VStandardYes-40°C ~ 175°C (TJ)Chassis MountSP3SP3
IXYS IGBT MODULE 1200V 20A HEX в производствеPTThree Phase Inverter1200V28A100W2.1V @ 15V, 16A200µA
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StandardNo-40°C ~ 125°C (TJ)Chassis MountECO-PAC2ECO-PAC2
Microsemi Corporation IGBT 1200V 153A 446W SOT227 в производствеTrench Field StopSingle1200V153A446W2.1V @ 15V, 100A100µA6.5nF @ 25VStandardNo-55°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCISOTOP®
IXYS IGBT XPT 1200V 152A SOT-227B в производстве
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Single1200V152A830W3.5V @ 15V, 100A25µA6nF @ 25VStandardNo-55°C ~ 175°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227B
Infineon Technologies IGBT MODULE VCES 600V 100A в производстве
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Three Phase Inverter1200V20A105W2.25V @ 15V, 10A1mA600pF @ 25VStandardYes-40°C ~ 150°CChassis MountModuleModule
Microsemi Corporation POWER MODULE - IGBT в производствеTrench Field StopBoost Chopper1200V170A520W2.42V @ 15V, 100A50µA6.15nF @ 25VStandardYes-40°C ~ 175°C (TJ)Chassis MountModuleSP1
IXYS IGBT MODULE 1200V 12A HEX в производствеPTThree Phase Inverter with Brake1200V17A63W2.1V @ 15V, 9A100µA
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Three Phase Bridge RectifierYes-40°C ~ 125°C (TJ)Chassis MountE1E1
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