номер части Производитель / Марка Краткое описание Статус деталиТип IGBTконфигурацияНапряжение - Разрыв эмиттера коллектора (макс.)Ток - коллектор (Ic) (макс.)Мощность - макс.Vce (вкл.) (Макс.) @ Vge, IcТок - отсечка коллектора (макс.)Входная емкость (Cies) @ VceвходТермистор NTCРабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
Global Power Technologies Group IGBT BOOST CHOP 600V 80A SOT227 в производствеTrench Field StopSingle600V80A277W2.5V @ 15V, 40A1mA2.72nF @ 30VStandardNo-55°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
Global Power Technologies Group IGBT MODULE 1200V 335A в производстве
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Three Phase Inverter1200V335A
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2.1V @ 15V, 200A1mA22.4nF @ 25VStandardYes-40°C ~ 150°C (TJ)Chassis MountModuleModule
Global Power Technologies Group IGBT BOOST CHOP 1200V 60A SOT227 в производствеTrench Field StopSingle1200V60A
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2.5V @ 15V, 30A1mA4nF @ 30VStandardNo-55°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
Global Power Technologies Group IGBT BOOST CHOP 600V 120A SOT227 в производствеTrench Field StopSingle600V120A297W2.3V @ 15V, 60A1mA3.3nF @ 30VStandardNo-55°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
Global Power Technologies Group IGBT BUCK CHOP 1200V 80A SOT227 в производствеTrench Field StopSingle1200V80A480W2.6V @ 15V, 40A1mA5.15nF @ 30VStandardNo-55°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
Global Power Technologies Group IGBT BOOST CHOP 1200V 80A SOT227 в производствеTrench Field StopSingle1200V80A480W2.6V @ 15V, 40A1mA5.15nF @ 30VStandardNo-55°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
Global Power Technologies Group IGBT BUCK CHOP 600V 160A SOT227 в производствеTrench Field StopSingle600V160A380W2.5V @ 15V, 80A2mA5.44nF @ 30VStandardNo-55°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
Global Power Technologies Group IGBT BOOST CHOP 600V 160A SOT227 в производствеTrench Field StopSingle600V160A380W2.5V @ 15V, 80A2mA5.44nF @ 30VStandardNo-55°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
Global Power Technologies Group IGBT BOOST CHP 1200V 120A SOT227 в производствеTrench Field StopSingle1200V120A680W2.5V @ 15V, 60A2mA8nF @ 30VStandardNo-55°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
Global Power Technologies Group IGBT BOOST CHP 1200V 160A SOT227 в производствеTrench Field StopSingle1200V160A480W2.6V @ 15V, 80A2mA10.3nF @ 30VStandardNo-55°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
Global Power Technologies Group IGBT MODULE 1200V 430A в производстве
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Three Phase Inverter1200V430A1630W2.25V @ 15V, 300A1mA30nF @ 25VStandardYes-40°C ~ 150°C (TJ)Chassis MountModuleModule
Global Power Technologies Group IGBT MODULE 1250V 600A CHASSIS в производствеTrench Field StopThree Level Inverter1250V600A2500W2.4V @ 15V, 300A1mA30.8nF @ 25VStandardYes-40°C ~ 150°C (TJ)Chassis MountModuleModule
Global Power Technologies Group IGBT BUCK CHOP 1200V 60A SOT227 в производствеTrench Field StopSingle1200V60A340W2.5V @ 15V, 30A1mA4nF @ 30VStandardNo-55°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
Global Power Technologies Group IGBT BUCK CHOP 600V 80A SOT227 в производствеTrench Field StopSingle600V80A277W2.5V @ 15V, 40A1mA2.72nF @ 30VStandardNo-55°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
Global Power Technologies Group IGBT BUCK CHOP 600V 120A SOT227 в производствеTrench Field StopSingle600V120A312W2.3V @ 15V, 60A1mA3.3nF @ 30VStandardNo-55°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
Global Power Technologies Group IGBT BUCK CHOP 1200V 120A SOT227 в производствеTrench Field StopSingle1200V120A680W2.5V @ 15V, 60A2mA8nF @ 30VStandardNo-55°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
Global Power Technologies Group IGBT BUCK CHOP 1200V 160A SOT227 в производствеTrench Field StopSingle1200V160A480W2.6V @ 15V, 80A2mA10.3nF @ 30VStandardNo-55°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
Global Power Technologies Group IGBT MODULE 1200V 170A в производстве
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Three Phase Inverter1200V170A650W2.1V @ 15V, 100A1mA13.7nF @ 25VStandardYes-40°C ~ 150°C (TJ)Chassis MountModuleModule
Global Power Technologies Group IGBT MODULE 1200V 285A в производстве
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Three Phase Inverter1200V285A1087W2.1V @ 15V, 150A1mA21.2nF @ 25VStandardYes-40°C ~ 150°C (TJ)Chassis MountModuleModule
Global Power Technologies Group IGBT 600V 160A SOT227 в производствеTrench Field StopSingle600V160A380W2.5V @ 15V, 80A2mA5.44nF @ 30VStandardNo-55°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
Global Power Technologies Group SILICON IGBT MODULES в производстве
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Single1200V160A1710W2V @ 15V, 80A1mA7nF @ 25VStandardYes-40°C ~ 150°CChassis MountModuleModule
Global Power Technologies Group SILICON IGBT MODULES в производстве
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2 Independent1200V300A940W2V @ 15V, 150A1mA14nF @ 25VStandardNo-40°C ~ 150°CChassis MountD-3 ModuleD3
Global Power Technologies Group SILICON IGBT MODULES в производстве
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2 Independent1200V400A1595W2V @ 15V, 200A1mA20nF @ 25VStandardNo-40°C ~ 150°CChassis MountD-3 ModuleD3
Global Power Technologies Group SILICON IGBT MODULES в производстве
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Single1200V275A1035W1.9V @ 15V, 150A1mA20.2nF @ 25VStandardYes-40°C ~ 150°CChassis MountModuleModule
Global Power Technologies Group SILICON IGBT MODULES в производстве
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Three Phase Inverter1200V200A640W2.1V @ 15V, 100A1mA13.7nF @ 25VThree Phase Bridge RectifierYes-40°C ~ 150°CChassis MountModuleModule
Global Power Technologies Group SILICON IGBT MODULES в производстве
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Three Phase Inverter1200V200A800W2.1V @ 15V, 100A1mA13.7nF @ 25VThree Phase Bridge RectifierYes-40°C ~ 150°CChassis MountModuleModule
Global Power Technologies Group SILICON IGBT MODULES в производстве
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Three Phase Inverter1200V200A710W2.1V @ 15V, 100A1mA13.7nF @ 25VThree Phase Bridge RectifierYes-40°C ~ 150°CChassis MountModuleModule
Global Power Technologies Group SILICON IGBT MODULES в производстве
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2 Independent1200V400A1630W1.9V @ 15V, 200A1mA26nF @ 25VStandardNo-40°C ~ 150°CChassis MountD-3 ModuleD3
Global Power Technologies Group SILICON IGBT MODULES в производстве
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Three Phase Inverter1200V285A1087W2.1V @ 15V, 150A1mA21.2nF @ 25VThree Phase Bridge RectifierYes-40°C ~ 150°CChassis MountModuleModule
Global Power Technologies Group SILICON IGBT MODULES в производстве
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Half Bridge1200V1130A3060W2.1V @ 15V, 600A1mA51nF @ 25VStandardYes-40°C ~ 150°CChassis MountModuleModule