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GeneSiC Semiconductor |
DIODE BRIDGE 200V 6A KBU |
в производстве | Single Phase | Standard | 200V | 6A | 1V @ 6A | 10µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBU | KBU |
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GeneSiC Semiconductor |
DIODE BRIDGE 400V 8A KBU |
в производстве | Single Phase | Standard | 400V | 8A | 1V @ 8A | 10µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBU | KBU |
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GeneSiC Semiconductor |
DIODE BRIDGE 600V 8A KBU |
в производстве | Single Phase | Standard | 600V | 8A | 1V @ 8A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBU | KBU |
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GeneSiC Semiconductor |
DIODE BRIDGE 1000V 8A KBU |
в производстве | Single Phase | Standard | 1kV | 8A | 1V @ 8A | 10µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBU | KBU |
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GeneSiC Semiconductor |
DIODE BRIDGE 200V 6A BR-6 |
в производстве | Single Phase | Standard | 200V | 6A | 1V @ 3A | 10µA @ 200V | -65°C ~ 125°C (TJ) | Through Hole | 4-Square, BR-6 | BR-6 |
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GeneSiC Semiconductor |
DIODE BRIDGE 1000V 35A GBPC-T/W |
в производстве | Single Phase | Standard | 1kV | 35A | 1.1V @ 17.5A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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GeneSiC Semiconductor |
DIODE BRIDGE 1000V 50A KBPC-T/W |
в производстве | Single Phase | Standard | 1kV | 50A | 1.1V @ 25A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, KBPC-T | KBPC-T |
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GeneSiC Semiconductor |
DIODE BRIDGE 1000V 6A KBU |
в производстве | Single Phase | Standard | 1kV | 6A | 1V @ 6A | 10µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBU | KBU |
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GeneSiC Semiconductor |
DIODE BRIDGE 50V 8A KBU |
в производстве | Single Phase | Standard | 50V | 8A | 1V @ 8A | 10µA @ 50V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBU | KBU |
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GeneSiC Semiconductor |
DIODE BRIDGE 400V 25A GBPC-T/W |
в производстве | Single Phase | Standard | 400V | 25A | 1.1V @ 12.5A | 5µA @ 400V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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GeneSiC Semiconductor |
DIODE BRIDGE 600V 25A GBPC-T/W |
в производстве | Single Phase | Standard | 600V | 25A | 1.1V @ 12.5A | 5µA @ 600V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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GeneSiC Semiconductor |
DIODE BRIDGE 800V 35A GBPC-T/W |
в производстве | Single Phase | Standard | 800V | 35A | 1.1V @ 17.5A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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GeneSiC Semiconductor |
DIODE BRIDGE 200V 35A GBPC-T/W |
в производстве | Single Phase | Standard | 200V | 35A | 1.1V @ 12.5A | 5µA @ 200V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC-T | GBPC-T |
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GeneSiC Semiconductor |
DIODE BRIDGE 400V 35A GBPC-T/W |
в производстве | Single Phase | Standard | 400V | 35A | 1.1V @ 12.5A | 5µA @ 400V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC-T | GBPC-T |
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GeneSiC Semiconductor |
DIODE BRIDGE 800V 25A GBPC-T/W |
в производстве | Single Phase | Standard | 800V | 25A | 1.1V @ 12.5A | 5µA @ 800V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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GeneSiC Semiconductor |
DIODE BRIDGE 800V 25A GBPC-T/W |
в производстве | Single Phase | Standard | 800V | 25A | 1.1V @ 1.2A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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GeneSiC Semiconductor |
DIODE BRIDGE 1000V 25A GBPC-T/W |
в производстве | Single Phase | Standard | 1kV | 25A | 1.1V @ 12.5A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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GeneSiC Semiconductor |
DIODE BRIDGE 100V 6A KBU |
в производстве | Single Phase | Standard | 100V | 6A | 1V @ 6A | 10µA @ 50V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBU | KBU |
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GeneSiC Semiconductor |
DIODE BRIDGE 600V 8A GBU |
в производстве | Single Phase | Standard | 600V | 8A | 1.1V @ 8A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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GeneSiC Semiconductor |
DIODE BRIDGE 100V 8A BR-8 |
в производстве | Single Phase | Standard | 100V | 8A | 1.1V @ 4A | 10µA @ 100V | -65°C ~ 125°C (TJ) | Through Hole | 4-Square, BR-8 | BR-8 |
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GeneSiC Semiconductor |
DIODE BRIDGE 200V 1A DB |
в производстве | Single Phase | Standard | 200V | 1A | 1.1V @ 1A | 10µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.321", 8.15mm) | DB |
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GeneSiC Semiconductor |
DIODE BRIDGE 100V 4A GBU |
в производстве | Single Phase | Standard | 100V | 4A | 1.1V @ 4A | 5µA @ 100V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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GeneSiC Semiconductor |
DIODE BRIDGE 50V 4A GBL |
в производстве | Single Phase | Standard | 50V | 4A | 1.1V @ 4A | 5µA @ 50V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | GBL |
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GeneSiC Semiconductor |
DIODE BRIDGE 200V 10A GBU |
в производстве | Single Phase | Standard | 200V | 10A | 1.1V @ 10A | 5µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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GeneSiC Semiconductor |
DIODE BRIDGE 800V 10A BR-10 |
в производстве | Single Phase | Standard | 800V | 10A | 1.1V @ 5A | 10µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, BR-10 | BR-10 |
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GeneSiC Semiconductor |
DIODE BRIDGE 200V 4 A- GBL |
в производстве | Single Phase | Standard | 200V | 4A | 1.1V @ 4A | 5µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | GBL |
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GeneSiC Semiconductor |
DIODE BRIDGE 50V 1A DB |
в производстве | Single Phase | Standard | 50V | 1A | 1.1V @ 1A | 5µA @ 50V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.321", 8.15mm) | DB |
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GeneSiC Semiconductor |
DIODE BRIDGE 100V 1A DB |
в производстве | Single Phase | Standard | 100V | 1A | 1.1V @ 1A | 10µA @ 100V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.321", 8.15mm) | DB |
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GeneSiC Semiconductor |
DIODE BRIDGE 400V 1A DB |
в производстве | Single Phase | Standard | 400V | 1A | 1.1V @ 1A | 10µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.321", 8.15mm) | DB |
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GeneSiC Semiconductor |
DIODE BRIDGE 600V 1A DB |
в производстве | Single Phase | Standard | 600V | 1A | 1.1V @ 1A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.321", 8.15mm) | DB |
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GeneSiC Semiconductor |
DIODE BRIDGE 800V 1A DB |
в производстве | Single Phase | Standard | 800V | 1A | 1.1V @ 1A | 10µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.321", 8.15mm) | DB |
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GeneSiC Semiconductor |
DIODE BRIDGE 1000V 1A DB |
в производстве | Single Phase | Standard | 1kV | 1A | 1.1V @ 1A | 10µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.321", 8.15mm) | DB |
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GeneSiC Semiconductor |
DIODE BRIDGE 50V 1.5A DB |
в производстве | Single Phase | Standard | 50V | 1.5A | 1.1V @ 1.5A | 5µA @ 50V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.321", 8.15mm) | DB |
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GeneSiC Semiconductor |
DIODE BRIDGE 100V 1.5A DB |
в производстве | Single Phase | Standard | 100V | 1.5A | 1.1V @ 1.5A | 5µA @ 100V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.321", 8.15mm) | DB |
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GeneSiC Semiconductor |
DIODE BRIDGE 200V 1.5A DB |
в производстве | Single Phase | Standard | 200V | 1.5A | 1.1V @ 1.5A | 5µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.321", 8.15mm) | DB |
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GeneSiC Semiconductor |
DIODE BRIDGE 400V 1.5A DB |
в производстве | Single Phase | Standard | 400V | 1.5A | 1.1V @ 1.5A | 5µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.321", 8.15mm) | DB |
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GeneSiC Semiconductor |
DIODE BRIDGE 600V 1.5A DB |
в производстве | Single Phase | Standard | 600V | 1.5A | 1.1V @ 1.5A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.321", 8.15mm) | DB |
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GeneSiC Semiconductor |
DIODE BRIDGE 800V 1.5A DB |
в производстве | Single Phase | Standard | 800V | 1.5A | 1.1V @ 1.5A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.321", 8.15mm) | DB |
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GeneSiC Semiconductor |
DIODE BRIDGE 1000V 1.5A DB |
в производстве | Single Phase | Standard | 1kV | 1.5A | 1.1V @ 1.5A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.321", 8.15mm) | DB |
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GeneSiC Semiconductor |
DIODE BRIDGE 50V 2A KBP |
в производстве | Single Phase | Standard | 50V | 2A | 1.1V @ 2A | 10µA @ 50V | -50°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBP | KBP |
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GeneSiC Semiconductor |
DIODE BRIDGE 100V 2A KBP |
в производстве | Single Phase | Standard | 100V | 2A | 1.1V @ 2A | 10µA @ 100V | -50°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBP | KBP |
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GeneSiC Semiconductor |
DIODE BRIDGE 200V 2A KBP |
в производстве | Single Phase | Standard | 200V | 2A | 1.1V @ 2A | 10µA @ 200V | -50°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBP | KBP |
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GeneSiC Semiconductor |
DIODE BRIDGE 400V 2A KBP |
в производстве | Single Phase | Standard | 400V | 2A | 1.1V @ 2A | 10µA @ 50V | -50°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBP | KBP |
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GeneSiC Semiconductor |
DIODE BRIDGE 600V 2A KBP |
в производстве | Single Phase | Standard | 600V | 2A | 1.1V @ 2A | 10µA @ 600V | -50°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBP | KBP |
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GeneSiC Semiconductor |
DIODE BRIDGE 800V 2A KBP |
в производстве | Single Phase | Standard | 800V | 2A | 1.1V @ 2A | 10µA @ 50V | -50°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBP | KBP |
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GeneSiC Semiconductor |
DIODE BRIDGE 50V 4A KBL |
в производстве | Single Phase | Standard | 50V | 4A | 1.1V @ 4A | 5µA @ 50V | -50°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBL | KBL |
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GeneSiC Semiconductor |
DIODE BRIDGE 100V 4A KBL |
в производстве | Single Phase | Standard | 100V | 4A | 1.1V @ 4A | 5µA @ 100V | -50°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBL | KBL |
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GeneSiC Semiconductor |
DIODE BRIDGE 200V 4A KBL |
в производстве | Single Phase | Standard | 200V | 4A | 1.1V @ 4A | 5µA @ 200V | -50°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBL | KBL |
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GeneSiC Semiconductor |
DIODE BRIDGE 400V 4A KBL |
в производстве | Single Phase | Standard | 400V | 4A | 1.1V @ 4A | 5µA @ 400V | -50°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBL | KBL |
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GeneSiC Semiconductor |
DIODE BRIDGE 600V 4A KBL |
в производстве | Single Phase | Standard | 600V | 4A | 1.1V @ 4A | 5µA @ 600V | -50°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBL | KBL |
