номер части Производитель / Марка Краткое описание Статус деталиТип диодаТехнологииНапряжение - Реверс пика (макс.)Текущий - средний отрегулированный (Io)Напряжение - Вперед (Vf) (Макс.) @ ЕслиТекущий - обратный утечек @ VrРабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 1KV 800MA MBS в производствеSingle PhaseStandard1kV800mA1V @ 1.5A5µA @ 1000V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-BESOP (0.173", 4.40mm Width)MBS
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 600V 1A ABS в производствеSingle PhaseStandard600V1A950mV @ 400mA10µA @ 600V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull WingABS
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 1KV 1A ABS в производствеSingle PhaseStandard1kV1A950mV @ 400mA10µA @ 1000V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull WingABS
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 400V 2.2A YBS в производствеSingle PhaseStandard400V2.2A970mV @ 2.2A5µA @ 400V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Flat LeadsYBS
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 600V 2.2A YBS в производствеSingle PhaseStandard600V2.2A970mV @ 2.2A5µA @ 600V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Flat LeadsYBS
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 800V 2.2A YBS в производствеSingle PhaseStandard800V2.2A970mV @ 2.2A5µA @ 800V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Flat LeadsYBS
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 1KV 2.2A YBS в производствеSingle PhaseStandard1kV2.2A970mV @ 2.2A5µA @ 1000V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Flat LeadsYBS
Taiwan Semiconductor Corporation BRIDGE RECT 1P 600V 800MA MBS в производствеSingle PhaseStandard600V800mA1V @ 2A5µA @ 600V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-BESOP (0.173", 4.40mm Width)MBS
Taiwan Semiconductor Corporation BRIDGE RECTIFIER 0.8A 200V в производстве
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Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 1KV 1A DBLS в производствеSingle PhaseStandard1kV1A1.1V @ 1.5A2µA @ 1000V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull WingDBLS
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 400V 1A DBLS в производствеSingle PhaseStandard400V1A1.1V @ 15A2µA @ 400V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull WingDBLS
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 100V 1A DBLS в производствеSingle PhaseStandard100V1A1.1V @ 15A2µA @ 100V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull WingDBLS
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 600V 1A DBLS в производствеSingle PhaseStandard600V1A1.1V @ 15A2µA @ 600V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull WingDBLS
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 1KV 1.5A DBLS в производствеSingle PhaseStandard1kV1.5A1.1V @ 1.5A2µA @ 1000V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull WingDBLS
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 1.4KV 2A DBLS в производствеSingle PhaseStandard1.4kV2A1.3V @ 2A2µA @ 1400V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull WingDBLS
Taiwan Semiconductor Corporation BRIDGE RECT 1P 1.4KV 1.5A DBLS в производствеSingle PhaseStandard1.4kV1.5A1.25V @ 1.5A2µA @ 1400V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull WingDBLS
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 600V 2A DBLS в производствеSingle PhaseStandard600V2A1.15V @ 2A2µA @ 600V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull WingDBLS
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 1KV 2A DBLS в производствеSingle PhaseStandard1kV2A1.15V @ 2A2µA @ 1000V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull WingDBLS
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 200V 2A DBLS в производствеSingle PhaseStandard200V2A1.15V @ 2A2µA @ 200V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull WingDBLS
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 800V 3A D3K в производствеSingle PhaseStandard800V3A1V @ 2A10µA @ 800V-55°C ~ 150°C (TJ)Through Hole4-ESIPD3K
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 600V 2A GBL в производствеSingle PhaseStandard600V2A1V @ 2A5µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBLGBL
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 800V 4A D3K в производствеSingle PhaseStandard800V4A1V @ 2A10µA @ 800V-55°C ~ 150°C (TJ)Through Hole4-ESIPD3K
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 800V 2A GBL в производствеSingle PhaseStandard800V2A1.1V @ 15A10µA @ 800V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBLGBL
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 600V 2A GBL в производствеSingle PhaseStandard600V2A1.1V @ 15A10µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBLGBL
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 600V 6A GBU в производствеSingle PhaseStandard600V6A1V @ 2A5µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 1KV 4A GBU в производствеSingle PhaseStandard1kV4A1V @ 1.5A5µA @ 1000V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 600V 4A GBU в производствеSingle PhaseStandard600V4A1V @ 2A5µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 1KV 8A GBU в производствеSingle PhaseStandard1kV8A1V @ 1.5A5µA @ 1000V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 600V 4A GBL в производствеSingle PhaseStandard600V4A1V @ 2A5µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBLGBL
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 800V 4A GBL в производствеSingle PhaseStandard800V4A1V @ 2A5µA @ 800V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBLGBL
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 600V 6A TS-6P в производствеSingle PhaseStandard600V6A1.1V @ 15A10µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-SIP, TS-6PTS-6P
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 1KV 10A GBU в производствеSingle PhaseStandard1kV10A1.1V @ 1.5A5µA @ 1000V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
Taiwan Semiconductor Corporation BRIDGE RECT 1P 600V 10A TS-6P в производствеSingle PhaseStandard600V10A1.1V @ 15A10µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-SIP, TS-6PTS-6P
Taiwan Semiconductor Corporation BRIDGE RECT 1P 800V 25A TS-6P в производствеSingle PhaseStandard800V25A1.1V @ 15A10µA @ 800V-55°C ~ 150°C (TJ)Through Hole4-SIP, TS-6PTS-6P
Taiwan Semiconductor Corporation BRIDGE RECT 1P 400V 800MA MBS в производствеSingle PhaseStandard400V800mA1V @ 2A5µA @ 400V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-BESOP (0.173", 4.40mm Width)MBS
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 800V 1A ABS в производствеSingle PhaseStandard800V1A950mV @ 400mA10µA @ 800V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull WingABS
Taiwan Semiconductor Corporation BRIDGE RECT 1P 800V 800MA MBS в производствеSingle PhaseStandard800V800mA1V @ 2A5µA @ 800V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-BESOP (0.173", 4.40mm Width)MBS
Taiwan Semiconductor Corporation BRIDGE RECT 1P 1KV 1.5A ABS-L в производствеSingle PhaseStandard1kV1.5A1V @ 1.5A1µA @ 1000V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull WingABS-L
Taiwan Semiconductor Corporation BRIDGE RECT 1P 200V 800MA MBS в производствеSingle PhaseStandard200V800mA1V @ 2A5µA @ 200V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-BESOP (0.173", 4.40mm Width)MBS
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 1KV 1.5A ABS в производствеSingle PhaseStandard1kV1.5A1V @ 1.5A5µA @ 1000V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull WingABS
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 600V 1.5A ABS в производствеSingle PhaseStandard600V1.5A1V @ 1.5A5µA @ 600V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull WingABS
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 1KV 2A ABS в производствеSingle PhaseStandard1kV2A1.1V @ 2A5µA @ 1000V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull WingABS
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 800V 1A DBL в производствеSingle PhaseStandard800V1A1.1V @ 15A2µA @ 800V-55°C ~ 150°C (TJ)Through Hole4-DIP (0.300", 7.62mm)DBL
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 1KV 1A DBL в производствеSingle PhaseStandard1kV1A1.1V @ 1.5A2µA @ 1000V-55°C ~ 150°C (TJ)Through Hole4-DIP (0.300", 7.62mm)DBL
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 600V 4A TS4K в производствеSingle PhaseStandard600V4A1V @ 2A10µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBLTS4K
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 800V 6A TS4K в производствеSingle PhaseStandard800V6A1V @ 2A5µA @ 800V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBLTS4K
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 600V 6A TS4K в производствеSingle PhaseStandard600V6A1V @ 2A5µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBLTS4K
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 800V 6A GBU в производствеSingle PhaseStandard800V6A1V @ 2A5µA @ 800V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 800V 4A GBU в производствеSingle PhaseStandard800V4A1V @ 2A5µA @ 800V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
Taiwan Semiconductor Corporation BRIDGE RECT 1PHASE 600V 6A KBJL в производствеSingle PhaseStandard600V6A1.05V @ 3A5µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-SIP, KBJLKBJL
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