номер части Производитель / Марка Краткое описание Статус деталиТип диодаТехнологииНапряжение - Реверс пика (макс.)Текущий - средний отрегулированный (Io)Напряжение - Вперед (Vf) (Макс.) @ ЕслиТекущий - обратный утечек @ VrРабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
ON Semiconductor RECT BRIDGE GPP 12A 200V GBPC в производствеSingle PhaseStandard200V12A1.1V @ 6A5µA @ 200V-55°C ~ 150°C (TJ)QC Terminal4-Square, GBPCGBPC
ON Semiconductor RECT BRIDGE GPP 12A 400V GBPC в производствеSingle PhaseStandard400V12A1.1V @ 6A5µA @ 400V-55°C ~ 150°C (TJ)QC Terminal4-Square, GBPCGBPC
ON Semiconductor RECT BRIDGE GPP 12A 1000V GBPC в производствеSingle PhaseStandard1kV12A1.1V @ 6A5µA @ 1000V-55°C ~ 150°C (TJ)QC Terminal4-Square, GBPCGBPC
ON Semiconductor RECT BRIDGE GPP 15A 600V GBPC-W в производствеSingle PhaseStandard600V15A1.1V @ 7.5A5µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-Square, GBPC-WGBPC-W
ON Semiconductor RECT BRIDGE GPP 15A 400V GBPC-W в производствеSingle PhaseStandard400V15A1.1V @ 7.5A5µA @ 400V-55°C ~ 150°C (TJ)Through Hole4-Square, GBPC-WGBPC-W
ON Semiconductor RECT BRIDGE GPP 15A 100V GBPC-W в производствеSingle PhaseStandard100V15A1.1V @ 7.5A5µA @ 100V-55°C ~ 150°C (TJ)Through Hole4-Square, GBPC-WGBPC-W
ON Semiconductor RECT BRIDGE GPP 25A 800V GBPC в производствеSingle PhaseStandard800V25A
-
5µA @ 800V-55°C ~ 150°C (TJ)QC Terminal4-Square, GBPCGBPC
ON Semiconductor RECT BRIDGE GPP 12A 600V GBPC в производствеSingle PhaseStandard600V12A1.1V @ 6A5µA @ 600V-55°C ~ 150°C (TJ)QC Terminal4-Square, GBPCGBPC
ON Semiconductor BRIDGE RECT 1A 800V 4SDIP в производствеSingle PhaseStandard800V1A1.1V @ 1A3µA @ 800V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull Wing4-SDIP
ON Semiconductor RECT BRIDGE GPP 4A 50V GBU в производствеSingle PhaseStandard50V4A1V @ 4A5µA @ 50V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
ON Semiconductor RECT BRIDGE GPP 4A 1000V GBU в производствеSingle PhaseStandard1kV4A1V @ 4A5µA @ 1000V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
ON Semiconductor RECT BRIDGE GPP 12A 1000V GBPC-W в производствеSingle PhaseStandard1kV12A1.1V @ 6A5µA @ 1000V-55°C ~ 150°C (TJ)Through Hole4-Square, GBPC-WGBPC-W
ON Semiconductor RECT BRIDGE GPP 25A 100V GBPC-W в производствеSingle PhaseStandard100V25A1.1V @ 7.5A5µA @ 100V-55°C ~ 150°C (TJ)Through Hole4-Square, GBPC-WGBPC-W
ON Semiconductor RECT BRIDGE GPP 12A 100V GBPC в производствеSingle PhaseStandard100V12A1.1V @ 6A5µA @ 100V-55°C ~ 150°C (TJ)QC Terminal4-Square, GBPCGBPC
ON Semiconductor RECT BRIDGE GPP 12A 50V GBPC в производствеSingle PhaseStandard50V12A1.1V @ 6A5µA @ 50V-55°C ~ 150°C (TJ)QC Terminal4-Square, GBPCGBPC
ON Semiconductor RECT BRIDGE GPP 15A 100V GBPC в производствеSingle PhaseStandard100V15A1.1V @ 7.5A5µA @ 100V-55°C ~ 150°C (TJ)QC Terminal4-Square, GBPCGBPC
ON Semiconductor RECT BRIDGE GPP 15A 200V GBPC-W в производствеSingle PhaseStandard200V15A1.1V @ 7.5A5µA @ 200V-55°C ~ 150°C (TJ)Through Hole4-Square, GBPC-WGBPC-W
ON Semiconductor RECT BRIDGE GPP 15A 50V GBPC-W в производствеSingle PhaseStandard50V15A1.1V @ 7.5A5µA @ 50V-55°C ~ 150°C (TJ)Through Hole4-Square, GBPC-WGBPC-W
ON Semiconductor RECT BRIDGE GPP 25A 50V GBPC в производствеSingle PhaseStandard50V25A
-
5µA @ 50V-55°C ~ 150°C (TJ)QC Terminal4-Square, GBPCGBPC
ON Semiconductor BRIDGE RECT 1A 400V 4SDIP в производствеSingle PhaseStandard400V1A1.1V @ 1A3µA @ 400V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull Wing4-SDIP
ON Semiconductor IC RECT BRIDGE 0.5A 400V 4SOIC в производствеSingle PhaseStandard400V500mA1V @ 500mA5µA @ 400V-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-269AA, 4-BESOP4-SOIC
ON Semiconductor RECTIFIER BRIDGE 30V 2A 4UDFN в производствеSingle PhaseSchottky30V2A650mV @ 2A20µA @ 30V125°C (TJ)SMD Поверхностный монтаж4-UDFN Exposed Pad4-UDFN (3.5x3.5)
ON Semiconductor IC FULL BRIDGE RECT 8-UDFN в производствеSingle PhaseSchottky20V3.2A450mV @ 2A40µA @ 20V-55°C ~ 125°C (TJ)SMD Поверхностный монтаж8-UDFN Exposed Pad8-UDFN (4x4)
ON Semiconductor BRIDGE RECT 200V 20A TS-6P в производствеSingle PhaseStandard200V20A1.1V @ 20A10µA @ 200V-55°C ~ 150°C (TJ)Through Hole4-SIP, TS-6PTS-6P
ON Semiconductor BRIDGE RECT 100V 20A TS-6P в производствеSingle PhaseStandard100V20A1.1V @ 20A10µA @ 50V-55°C ~ 150°C (TJ)Through Hole4-SIP, TS-6PTS-6P
ON Semiconductor BRIDGE RECT 50V 20A TS-6P в производствеSingle PhaseStandard50V20A1.1V @ 20A10µA @ 50V-55°C ~ 150°C (TJ)Through Hole4-SIP, TS-6PTS-6P
ON Semiconductor BRIDGE RECT 1000V 20A TS-6P в производствеSingle PhaseStandard1kV20A1.1V @ 20A10µA @ 50V-55°C ~ 150°C (TJ)Through Hole4-SIP, TS-6PTS-6P
ON Semiconductor BRIDGE RECT 100V 25A TS-6P в производствеSingle PhaseStandard100V25A1.1V @ 25A10µA @ 100V-55°C ~ 150°C (TJ)Through Hole4-SIP, TS-6PTS-6P
ON Semiconductor BRIDGE RECT 50V 25A TS-6P в производствеSingle PhaseStandard50V25A1.1V @ 25A10µA @ 50V-55°C ~ 150°C (TJ)Through Hole4-SIP, TS-6PTS-6P
ON Semiconductor RECT BRIDGE GPP 15A 1000V GBPC-W в производствеSingle PhaseStandard1kV15A1.1V @ 7.5A5µA @ 1000V-55°C ~ 150°C (TJ)Through Hole4-Square, GBPC-WGBPC-W
ON Semiconductor RECT BRIDGE GPP 35A 50V GBPC-W в производствеSingle PhaseStandard50V35A1.1V @ 17.5A5µA @ 50V-55°C ~ 150°C (TJ)Through Hole4-Square, GBPC-WGBPC-W
ON Semiconductor RECT BRIDGE GPP 8A 800V GBU в производствеSingle PhaseStandard800V8A1V @ 8A5µA @ 800V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
ON Semiconductor RECT BRIDGE GPP 4A 200V GBU в производствеSingle PhaseStandard200V4A1V @ 4A5µA @ 200V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
ON Semiconductor RECT BRIDGE GPP 6A 200V GBU в производствеSingle PhaseStandard200V6A1V @ 6A5µA @ 200V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
ON Semiconductor RECT BRIDGE GPP 4A 800V GBU в производствеSingle PhaseStandard800V4A1V @ 4A5µA @ 800V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
ON Semiconductor RECT BRIDGE GPP 8A 50V GBU в производствеSingle PhaseStandard50V8A1V @ 8A5µA @ 50V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
ON Semiconductor RECT BRIDGE GPP 8A 400V GBU в производствеSingle PhaseStandard400V8A1V @ 8A5µA @ 400V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
ON Semiconductor BRIDGE RECT 400V 20A TS-6P в производствеSingle PhaseStandard400V20A1.1V @ 20A10µA @ 400V-55°C ~ 150°C (TJ)Through Hole4-SIP, TS-6PTS-6P
ON Semiconductor BRIDGE RECT 800V 25A TS-6P в производствеSingle PhaseStandard800V25A1.1V @ 25A10µA @ 800V-55°C ~ 150°C (TJ)Through Hole4-SIP, TS-6PTS-6P
ON Semiconductor RECT BRIDGE GPP 15A 50V GBPC в производствеSingle PhaseStandard50V15A1.1V @ 7.5A5µA @ 50V-55°C ~ 150°C (TJ)QC Terminal4-Square, GBPCGBPC
ON Semiconductor RECT BRIDGE GPP 15A 600V GBPC в производствеSingle PhaseStandard600V15A1.1V @ 7.5A5µA @ 600V-55°C ~ 150°C (TJ)QC Terminal4-Square, GBPCGBPC
ON Semiconductor RECT BRIDGE GPP 35A 100V GBPC в производствеSingle PhaseStandard100V35A1.1V @ 17.5A5µA @ 100V-55°C ~ 150°C (TJ)QC Terminal4-Square, GBPCGBPC
ON Semiconductor RECT BRIDGE GPP 12A 400V GBPC-W в производствеSingle PhaseStandard400V12A1.1V @ 6A5µA @ 400V-55°C ~ 150°C (TJ)Through Hole4-Square, GBPC-WGBPC-W
ON Semiconductor RECT BRIDGE GPP 35A 50V GBPC в производствеSingle PhaseStandard50V35A1.1V @ 17.5A5µA @ 50V-55°C ~ 150°C (TJ)QC Terminal4-Square, GBPCGBPC
ON Semiconductor RECT BRIDGE GPP 6A 1000V GBU в производствеSingle PhaseStandard1kV6A1V @ 6A5µA @ 800V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
ON Semiconductor BRIDGE RECT 800V 20A TS-6P в производствеSingle PhaseStandard800V20A1.1V @ 20A10µA @ 800V-55°C ~ 150°C (TJ)Through Hole4-SIP, TS-6PTS-6P
ON Semiconductor BRIDGE RECT 1A 50V 4SDIP в производствеSingle PhaseStandard50V1A1.1V @ 1A3µA @ 50V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull Wing4-SDIP
ON Semiconductor IC BRIDGE DIODE 600V 4-MICRODIP в производствеSingle PhaseStandard600V1A1.1V @ 1A10µA @ 600V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull Wing4-MicroDIP/SMD
ON Semiconductor BRIDGE RECT 1A 100V 4SDIP в производствеSingle PhaseStandard100V1A1.1V @ 1A3µA @ 100V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull Wing4-SDIP
ON Semiconductor BRIDGE RECT 1A 600V 4SDIP в производствеSingle PhaseStandard600V1A1.1V @ 1A5µA @ 600V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull Wing4-SDIP
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