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Vishay Semiconductor Diodes Division |
IGBT |
в производстве | PT, Trench | Half Bridge | 600V | 337A | 781W | 1.34V @ 15V, 100A | 150µA | - | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | INT-A-Pak | INT-A-PAK |
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Vishay Semiconductor Diodes Division |
OUTPUT SW MODULES - MTP SWITCH |
в производстве | - | Dual Buck Chopper | 600V | 138A | 543W | 2.48V @ 15V, 80A | 100µA | 14nF @ 30V | Standard | No | 150°C (TJ) | Chassis Mount | 12-MTP Module | 12-MTP Pressfit |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP |
в производстве | - | Dual Buck Chopper | 600V | 138A | 543W | 2.48V @ 15V, 80A | 100µA | 14nF @ 30V | Standard | Yes | 150°C (TJ) | Chassis Mount | 12-MTP Module | 12-MTP Pressfit |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 105A 500W INT-A-PAK |
в производстве | - | Half Bridge | 1200V | 105A | 500W | 3.2V @ 15V, 75A (Typ) | 2mA | 4.3nF @ 30V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | INT-A-PAK (3 + 4) | INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT 600V 138A 500W INT-A-PAK |
в производстве | NPT | Half Bridge | 600V | 138A | 500W | 3V @ 15V, 150A | 200µA | - | Standard | No | 150°C (TJ) | Chassis Mount | INT-A-PAK (3 + 4) | INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT 600V 108A 390W INT-A-PAK |
в производстве | NPT | Half Bridge | 600V | 108A | 390W | 2.85V @ 15V, 100A | 100µA | - | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | INT-A-Pak | INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 80A 463W MTP |
в производстве | NPT | Half Bridge | 1200V | 80A | 463W | 4.91V @ 15V, 80A | 250µA | 8.28nF @ 30V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | 12-MTP Module | MTP |
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Vishay Semiconductor Diodes Division |
IGBT |
в производстве | Trench | Half Bridge | 650V | 221A | 600W | 2.12V @ 15V, 200A | 60µA | - | Standard | No | -40°C ~ 175°C (TJ) | Chassis Mount | INT-A-Pak | INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 200A 650W INT-A-PAK |
в производстве | - | Half Bridge | 1200V | 200A | 650W | 2.2V @ 15V, 100A | 5mA | 7.43nF @ 25V | Standard | No | 150°C (TJ) | Chassis Mount | INT-A-Pak | INT-A-PAK |
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Vishay Semiconductor Diodes Division |
MOD IGBT 20A 500V MTP |
в производстве | - | - | - | - | - | - | - | - | - | No | - | - | - | - |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 300A 1389W INT-A-PAK |
в производстве | - | Single | 1200V | 300A | 1389W | 1.87V @ 15V, 150A (Typ) | 1mA | 10.6nF @ 25V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 4) | Double INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT 600V 209A 781W INT-A-PAK |
в производстве | NPT | Half Bridge | 600V | 209A | 781W | 2.84V @ 15V, 200A | 200µA | - | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | INT-A-PAK (3 + 4) | INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 66A 330W ECONO |
в производстве | - | - | 1200V | 66A | 330W | 4.5V @ 15V, 75A | 250µA | - | Standard | No | 150°C (TJ) | Chassis Mount | Module | ECONO2 4PACK |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 280A 1147W INT-A-PAK |
в производстве | - | Half Bridge | 1200V | 280A | 1147W | 3.6V @ 15V, 150A | 5mA | 12.7nF @ 30V | Standard | No | 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 4) | Double INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT |
в производстве | PT, Trench | Half Bridge | 600V | 580A | 1136W | 1.45V @ 15V, 300A | 150µA | - | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | Dual INT-A-PAK (3 + 8) | Dual INT-A-PAK |
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Vishay Semiconductor Diodes Division |
OUTPUT SW MODULES - ECONO IGBT |
в производстве | NPT | Full Bridge | 1200V | 127A | 625W | 4V @ 15V, 100A | 80µA | - | Standard | Yes | -55°C ~ 150°C (TJ) | Chassis Mount | Module | ECONO3 4PACK |
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Vishay Semiconductor Diodes Division |
IGBT 600V 85A 208W INT-A-PAK |
в производстве | Trench | Half Bridge | 600V | 85A | 208W | 2.1V @ 15V, 50A | 1mA | 3.03nF @ 30V | Standard | No | 175°C (TJ) | Chassis Mount | INT-A-PAK (3 + 4) | INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT |
в производстве | PT, Trench | Half Bridge | 600V | 758A | 1563W | 1.52V @ 15V, 400A | 200µA | - | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | Dual INT-A-PAK (3 + 8) | Dual INT-A-PAK |
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Vishay Semiconductor Diodes Division |
OUTPUT SW MODULES - EMIPAK 2B |
в производстве | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Semiconductor Diodes Division |
IGBT 600V 530A 1136W INT-A-PAK |
в производстве | - | Half Bridge | 600V | 530A | 1136W | 1.45V @ 15V, 300A | 750µA | - | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | Dual INT-A-PAK (3 + 8) | Dual INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 500A 1645W INT-A-PAK |
в производстве | - | Single | 1200V | 500A | 1645W | 2V @ 15V, 300A (Typ) | 5mA | 21.2nF @ 25V | Standard | No | 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 4) | Double INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 500A 1645W INT-A-PAK |
в производстве | - | Single | 1200V | 500A | 1645W | 2.45V @ 15V, 300A | 5mA | 21.2nF @ 25V | Standard | No | 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 4) | Double INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 550A 2841W INT-A-PAK |
в производстве | - | Single | 1200V | 550A | 2841W | 3.6V @ 15V, 400A | 5mA | 33.7nF @ 30V | Standard | No | 150°C (TJ) | Chassis Mount | Double INT-A-PAK (5) | Double INT-A-PAK |
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Vishay Semiconductor Diodes Division |
OUTPUT SW MODULES - ECONO IGBT |
в производстве | NPT | Full Bridge | 1200V | 182A | 892W | 4V @ 15V, 200A | 120µA | - | Standard | Yes | -55°C ~ 150°C (TJ) | Chassis Mount | Module | ECONO3 4PACK |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 341A 1042W DIAP |
в производстве | Trench | Half Bridge | 1200V | 341A | 1042W | 2.17V @ 15V, 300A (Typ) | 300µA | 36nF @ 30V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 8) | Double INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT 600V 160A 417W INT-A-PAK |
в производстве | Trench | Half Bridge | 600V | 160A | 417W | 2.1V @ 15V, 100A | 5mA | 7.71nF @ 30V | Standard | No | 175°C (TJ) | Chassis Mount | INT-A-PAK (3 + 4) | INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT 600V 750A 1563W INT-A-PAK |
в производстве | - | Half Bridge | 600V | 750A | 1563W | 1.52V @ 15V, 400A | 1mA | - | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | Dual INT-A-PAK (3 + 8) | Dual INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 150A 543W INT-A-PAK |
в производстве | - | Half Bridge | 1200V | 150A | 543W | 2.35V @ 15V, 75A | 5mA | 5.52nF @ 25V | Standard | No | 150°C (TJ) | Chassis Mount | INT-A-PAK (3 + 4) | INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 910A 3125W INT-A-PAK |
в производстве | - | Single | 1200V | 910A | 3125W | 1.9V @ 15V, 600A (Typ) | 5mA | 41nF @ 25V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | Double INT-A-PAK (5) | Double INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 800A 2604W INT-A-PAK |
в производстве | - | Half Bridge | 1200V | 800A | 2604W | 1.9V @ 15V, 400A (Typ) | 5mA | 32.7nF @ 25V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 4) | Double INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 660A 2660W INT-A-PAK |
в производстве | NPT | Half Bridge | 1200V | 660A | 2660W | 3.6V @ 15V, 400A | 5mA | 33.7nF @ 30V | Standard | No | 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 4) | Double INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 200A 833W INT-A-PAK |
в производстве | - | Single | 1200V | 200A | 833W | 2.35V @ 15V, 100A | 5mA | 8.58nF @ 25V | Standard | No | 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 4) | Double INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 200A 833W INT-A-PAK |
в производстве | - | Single | 1200V | 200A | 833W | 1.77V @ 15V, 100A (Typ) | 1mA | 8.96nF @ 25V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 4) | Double INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 100A 480W ECONO |
в производстве | - | - | 1200V | 100A | 480W | 4.5V @ 15V, 100A | 250µA | - | Standard | No | 150°C (TJ) | Chassis Mount | Module | ECONO2 4PACK |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 100A 480W ECONO |
в производстве | - | - | 1200V | 100A | 480W | 4.5V @ 15V, 100A | 250µA | - | Standard | Yes | 150°C (TJ) | Chassis Mount | Module | ECONO2 4PACK |
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Vishay Semiconductor Diodes Division |
IGBT 600V 260A 1042W INT-A-PAK |
в производстве | - | Half Bridge | 600V | 260A | 1042W | 1.9V @ 15V, 200A (Typ) | 5µA | 13.1nF @ 25V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 4) | Double INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 200A 833W INT-A-PAK |
в производстве | - | Half Bridge | 1200V | 200A | 833W | 2.35V @ 15V, 100A | 5mA | 8.58nF @ 25V | Standard | No | 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 4) | Double INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 200A 1136W INT-A-PAK |
в производстве | NPT | Half Bridge | 1200V | 200A | 1136W | 3.6V @ 15V, 100A | 5mA | 8.45nF @ 20V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 4) | Double INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 370A 1562W INT-A-PAK |
в производстве | - | Single | 1200V | 370A | 1562W | 2.07V @ 15V, 200A (Typ) | 100nA | 18nF @ 25V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 4) | Double INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 420A 1562W INT-A-PAK |
в производстве | - | Single | 1200V | 420A | 1562W | 1.8V @ 15V, 200A (Typ) | 5mA | 18nF @ 25V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 4) | Double INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 300A 1008W INT-A-PAK |
в производстве | - | Half Bridge | 1200V | 300A | 1008W | 2.35V @ 15V, 150A | 5mA | 11nF @ 25V | Standard | No | 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 4) | Double INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 620A 2500W INT-A-PAK |
в производстве | - | Single | 1200V | 620A | 2500W | 1.9V @ 15V, 300A (Typ) | 5mA | 21nF @ 25V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | Double INT-A-PAK (5) | Double INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 360A 1136W INT-A-PAK |
в производстве | - | Half Bridge | 1200V | 360A | 1136W | 2.35V @ 15V, 200A | 5mA | 14.9nF @ 25V | Standard | No | 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 4) | Double INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 330A 1316W INT-A-PAK |
в производстве | - | Half Bridge | 1200V | 330A | 1316W | 3.6V @ 15V, 200A | 5mA | 16.9nF @ 30V | Standard | No | 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 4) | Double INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT 600V 530A 1600W DIAP |
в производстве | Trench | Half Bridge | 600V | 530A | 1600W | 2.05V @ 15V, 400A | 5mA | 30.8nF @ 30V | Standard | No | 175°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 8) | Double INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 650A 2500W INT-A-PAK |
в производстве | - | Single | 1200V | 650A | 2500W | 1.9V @ 15V, 400A (Typ) | 5mA | 30nF @ 25V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | Double INT-A-PAK (5) | Double INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT 600V 379A 1250W DIAP |
в производстве | Trench Field Stop | Three Level Inverter | 600V | 379A | 1250W | 2.5V @ 15V, 300A | 250µA | 23.3nF @ 30V | Standard | No | 175°C (TJ) | Chassis Mount | Dual INT-A-PAK (4 + 8) | Dual INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 500A 1645W INT-A-PAK |
в производстве | - | Half Bridge | 1200V | 500A | 1645W | 2.45V @ 15V, 300A | 5mA | 21.2nF @ 25V | Standard | No | 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 4) | Double INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 530A 2119W INT-A-PAK |
в производстве | - | Half Bridge | 1200V | 530A | 2119W | 3.6V @ 15V, 300A | 5mA | 25.3nF @ 30V | Standard | No | 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 4) | Double INT-A-PAK |
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Vishay Semiconductor Diodes Division |
IGBT SIP MODULE 600V 9A IMS-2 |
устарелый | - | Three Phase Inverter | 600V | 16A | 36W | 1.63V @ 15V, 16A | 250µA | 1.1nF @ 30V | Standard | No | -40°C ~ 150°C (TJ) | Through Hole | 19-SIP (13 Leads), IMS-2 | IMS-2 |
