номер части Производитель / Марка Краткое описание Статус деталиКоличество каналовНапряжение - изоляцияКоэффициент передачи в реальном времени (мин.)Коэффициент передачи тока (макс.)Время включения / выключения (Тип)Время нарастания / падения (Тип)Тип вводаТип выходаНапряжение - выход (макс.)Текущий - выход / каналНапряжение - Вперед (Vf) (Тип)Current - DC Forward (If) (Max)Vce Saturation (Макс.)Рабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
Broadcom Limited OPTOISOLATOR 3.75KV TRANSISTOR 8-DIP в производстве13750Vrms19% @ 16mA50% @ 16mA200ns, 600ns
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DCTransistor20V8mA1.5V25mA
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-55°C ~ 100°CThrough Hole8-DIP (0.300", 7.62mm)8-DIP
Broadcom Limited OPTOISOLATOR 5KV TRANSISTOR 8DIP в производстве15000Vrms19% @ 16mA50% @ 16mA200ns, 600ns
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DCTransistor20V8mA1.5V25mA
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-55°C ~ 100°CThrough Hole8-DIP (0.300", 7.62mm)8-DIP
Broadcom Limited OPTOISOLTR 3.75KV TRANSISTOR 8-DIP GW в производстве13750Vrms19% @ 16mA50% @ 16mA200ns, 600ns
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DCTransistor20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж8-SMD, Gull Wing8-DIP Gull Wing
Broadcom Limited OPTOISOLTR 3.75KV TRANSISTOR 8-DIP GW в производстве13750Vrms19% @ 16mA50% @ 16mA200ns, 600ns
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DCTransistor20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж8-SMD, Gull Wing8-DIP Gull Wing
Broadcom Limited OPTOISOLATOR 3.75KV DARL 8DIP GW в производстве13750Vrms300% @ 1.6mA2600% @ 1.6mA25µs, 50µs
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DCDarlington7V60mA1.5V20mA
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0°C ~ 70°CSMD Поверхностный монтаж8-SMD, Gull Wing8-DIP Gull Wing
Broadcom Limited OPTOISO 3.75KV TRANSISTOR W/BASE 8SO в производстве13750Vrms5% @ 16mA
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200ns, 1.3µs
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DCTransistor with Base20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
Broadcom Limited OPTOISO 5KV TRANSISTOR 8DIP GULL WING в производстве15000Vrms19% @ 16mA50% @ 16mA200ns, 600ns
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DCTransistor20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж8-SMD, Gull Wing8-DIP Gull Wing
Broadcom Limited OPTOISOLTR 3.75KV TRANSISTOR 8-DIP GW в производстве13750Vrms19% @ 16mA50% @ 16mA200ns, 600ns
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DCTransistor20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж8-SMD, Gull Wing8-DIP Gull Wing
Broadcom Limited OPTOISO 5KV TRANSISTOR 8DIP в производстве15000Vrms25% @ 16mA60% @ 16mA200ns, 300ns
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DCTransistor20V8mA1.5V25mA
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-55°C ~ 100°CThrough Hole8-DIP (0.300", 7.62mm)8-DIP
Broadcom Limited OPTOISO 3.75KV TRANSISTOR 8DIP в производстве13750Vrms25% @ 16mA60% @ 16mA200ns, 300ns
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DCTransistor20V8mA1.5V25mA
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-55°C ~ 100°CThrough Hole8-DIP (0.300", 7.62mm)8-DIP
Broadcom Limited OPTOISO 5KV TRANSISTOR 8DIP GULL WING в производстве15000Vrms19% @ 16mA50% @ 16mA200ns, 600ns
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DCTransistor20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж8-SMD, Gull Wing8-DIP Gull Wing
Broadcom Limited OPTOISOLTR 3.75KV TRANSISTOR 8-DIP GW в производстве13750Vrms19% @ 16mA50% @ 16mA200ns, 600ns
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DCTransistor20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж8-SMD, Gull Wing8-DIP Gull Wing
Broadcom Limited OPTOISO 3.75KV DARL W/BASE 8SOIC в производстве13750Vrms500% @ 1.6mA2600% @ 1.6mA200ns, 2µs
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DCDarlington with Base18V60mA1.4V20mA
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-40°C ~ 85°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
Broadcom Limited OPTOISO 3.75KV TRANS в производстве13750Vrms80% @ 3mA200% @ 3mA300ns, 330ns
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DCTransistor24V8mA1.5V20mA
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-40°C ~ 105°CSMD Поверхностный монтаж6-SOIC (0.173", 4.40mm Width), 5 Leads5-SO
Broadcom Limited OPTOISO 3.75KV TRANS в производстве13750Vrms80% @ 3mA200% @ 3mA300ns, 330ns
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DCTransistor24V8mA1.5V20mA
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-40°C ~ 105°CSMD Поверхностный монтаж6-SOIC (0.173", 4.40mm Width), 5 Leads5-SO
Broadcom Limited OPTOISO 3.75KV TRANSISTOR W/BASE 8SO в производстве13750Vrms5% @ 16mA
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200ns, 1.3µs
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DCTransistor with Base20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
Broadcom Limited OPTOISO 3.75KV TRANSISTOR W/BASE 8SO в производстве13750Vrms5% @ 16mA
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200ns, 1.3µs
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DCTransistor with Base20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
Broadcom Limited OPTOISO 5KV TRANSISTOR 8SMD в производстве15000Vrms25% @ 16mA60% @ 16mA200ns, 300ns
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DCTransistor20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж8-SMD, Gull Wing8-SMD
Broadcom Limited OPTOISO 3.75KV TRANSISTOR 8DIPGW в производстве13750Vrms25% @ 16mA60% @ 16mA200ns, 300ns
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DCTransistor20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж8-SMD, Gull Wing8-DIP Gull Wing
Broadcom Limited OPTOISO 5KV TRANSISTOR 8SMD в производстве15000Vrms25% @ 16mA60% @ 16mA200ns, 300ns
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DCTransistor20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж8-SMD, Gull Wing8-SMD
Broadcom Limited OPTOISO 3.75KV TRANS в производстве13750Vrms80% @ 3mA200% @ 3mA300ns, 330ns
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DCTransistor24V8mA1.5V20mA
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-40°C ~ 105°CSMD Поверхностный монтаж6-SOIC (0.173", 4.40mm Width), 5 Leads5-SO
Broadcom Limited OPTOISO 3.75KV TRANSISTOR W/BASE 8SO в производстве13750Vrms5% @ 16mA
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200ns, 1.3µs
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DCTransistor with Base20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
Broadcom Limited OPTOISO 3.75KV DARLINGTON 8-SO в производстве13750Vrms300% @ 1.6mA2600% @ 1.6mA25µs, 50µs
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DCDarlington7V60mA1.5V20mA
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0°C ~ 70°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
Broadcom Limited OPTOISO 3.75KV TRANSISTOR W/BASE 8SMD в производстве13750Vrms15% @ 16mA22% @ 16mA200ns, 600ns
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DCTransistor with Base20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж8-SMD, Gull Wing8-SMD
Broadcom Limited OPTOISO 5KV TRANSISTOR W/BASE 8DIP в производстве15000Vrms15% @ 16mA22% @ 16mA200ns, 600ns
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DCTransistor with Base20V8mA1.5V25mA
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-55°C ~ 100°CThrough Hole8-DIP (0.300", 7.62mm)8-DIP
Broadcom Limited OPTOISOLATOR 3.75KV TRANSISTOR 8-SO в производстве13750Vrms15% @ 16mA
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1µs, 1µs (Max)
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DCTransistor20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
Broadcom Limited OPTOISO 3.75KV TRANSISTOR W/BASE 8SMD в производстве13750Vrms19% @ 16mA50% @ 16mA200ns, 600ns
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DCTransistor with Base20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж8-SMD, Gull Wing8-SMD
Broadcom Limited OPTOISO 3.75KV TRANSISTOR W/BASE 8DIP в производстве13750Vrms19% @ 16mA50% @ 16mA200ns, 600ns
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DCTransistor with Base20V8mA1.5V25mA
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-55°C ~ 100°CThrough Hole8-DIP (0.300", 7.62mm)8-DIP
Broadcom Limited OPTOISO 5KV TRANSISTOR W/BASE 8DIP в производстве15000Vrms19% @ 16mA50% @ 16mA200ns, 600ns
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DCTransistor with Base20V8mA1.5V25mA
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-55°C ~ 100°CThrough Hole8-DIP (0.300", 7.62mm)8-DIP
Broadcom Limited OPTOISO 3.75KV TRANSISTOR W/BASE 8SMD в производстве13750Vrms19% @ 16mA50% @ 16mA200ns, 600ns
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DCTransistor with Base20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж8-SMD, Gull Wing8-SMD
Broadcom Limited OPTOISO 3.75KV TRANSISTOR 6SOIC в производстве13750Vrms20% @ 16mA50% @ 16mA200ns, 600ns
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DCTransistor20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж6-SOIC (0.173", 4.40mm Width), 5 Leads6-SO
Broadcom Limited OPTOISOLATOR 3.75KV TRANSISTOR 8-SO в производстве13750Vrms15% @ 16mA
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1µs, 1µs (Max)
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DCTransistor20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
Broadcom Limited OPTOISOLATOR 3.75KV TRANSISTOR 8-SO в производстве13750Vrms15% @ 16mA
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1µs, 1µs (Max)
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DCTransistor20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
Broadcom Limited OPTOISO 3.75KV DARL W/BASE 8SOIC в производстве13750Vrms300% @ 1.6mA2600% @ 1.6mA1.6µs, 10µs
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DCDarlington with Base7V60mA1.4V20mA
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-40°C ~ 85°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
Broadcom Limited OPTOISO 3.75KV TRANSISTOR W/BASE 8SO в производстве13750Vrms15% @ 16mA
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200ns, 600ns
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DCTransistor with Base20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
Broadcom Limited OPTOISO 5KV TRANSISTOR W/BASE 8SMD в производстве15000Vrms19% @ 16mA50% @ 16mA200ns, 600ns
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DCTransistor with Base20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж8-SMD, Gull Wing8-SMD
Broadcom Limited OPTOISO 5KV TRANSISTOR W/BASE 8SMD в производстве15000Vrms19% @ 16mA50% @ 16mA200ns, 600ns
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DCTransistor with Base20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж8-SMD, Gull Wing8-SMD
Broadcom Limited OPTOISO 3.75KV TRANSISTOR W/BASE 8SO в производстве13750Vrms15% @ 16mA
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200ns, 600ns
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DCTransistor with Base20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
Broadcom Limited OPTOISO 5KV TRANSISTOR 6-SO STRETCHED в производстве15000Vrms93% @ 3mA200% @ 3mA200ns, 380ns
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DCTransistor24V8mA1.5V20mA
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-40°C ~ 105°CSMD Поверхностный монтаж6-SOIC (0.268", 6.80mm Width)6-SO Stretched
Broadcom Limited OPTOISO 3.75KV TRANSISTOR 6SOIC в производстве13750Vrms20% @ 16mA50% @ 16mA200ns, 600ns
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DCTransistor20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж6-SOIC (0.173", 4.40mm Width), 5 Leads5-SO
Broadcom Limited OPTOISOLATOR 3.75KV TRANSISTOR 8-SO в производстве13750Vrms15% @ 16mA
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1µs, 1µs (Max)
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DCTransistor20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
Broadcom Limited OPTOISO 3.75KV DARL W/BASE 8SOIC в производстве13750Vrms300% @ 1.6mA2600% @ 1.6mA1.6µs, 10µs
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DCDarlington with Base7V60mA1.4V20mA
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-40°C ~ 85°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
Broadcom Limited OPTOISO 3.75KV DARL W/BASE 8SOIC в производстве13750Vrms300% @ 1.6mA2600% @ 1.6mA1.6µs, 10µs
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DCDarlington with Base7V60mA1.4V20mA
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-40°C ~ 85°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
Broadcom Limited OPTOISO 3.75KV TRANSISTOR W/BASE 8SO в производстве13750Vrms15% @ 16mA
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200ns, 600ns
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DCTransistor with Base20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
Broadcom Limited OPTOISO 3.75KV 2CH TRANSISTOR 8DIP в производстве23750Vrms7% @ 16mA50% @ 16mA200ns, 1.3µs
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DCTransistor20V8mA1.5V25mA
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-55°C ~ 100°CThrough Hole8-DIP (0.300", 7.62mm)8-DIP
Broadcom Limited OPTOISO 3.75KV DARL W/BASE 8SOIC в производстве13750Vrms300% @ 1.6mA2600% @ 1.6mA1.6µs, 10µs
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DCDarlington with Base7V60mA1.4V20mA
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-40°C ~ 85°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
Broadcom Limited OPTOISO 3.75KV TRANSISTOR W/BASE 8SO в производстве13750Vrms19% @ 16mA50% @ 16mA200ns, 600ns
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DCTransistor with Base7V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
Broadcom Limited OPTOISO 3.75KV DARL W/BASE 6DIP в производстве13750Vrms200% @ 10mA1000% @ 10mA5µs, 150µs
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DCDarlington with Base7V60mA1.4V20mA
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-40°C ~ 85°CThrough Hole6-DIP (0.300", 7.62mm)6-DIP
Broadcom Limited OPTOISOLATOR 3.75KV TRANSISTOR 8-DIP в производстве13750Vrms19% @ 16mA50% @ 16mA200ns, 600ns
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DCTransistor20V8mA1.5V25mA
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-55°C ~ 100°CThrough Hole8-DIP (0.300", 7.62mm)8-DIP
Broadcom Limited OPTOISO 3.75KV TRANSISTOR 8SMD в производстве13750Vrms19% @ 16mA60% @ 16mA500ns, 800ns
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DCTransistor20V8mA1.59V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж8-SMD, Gull Wing8-SMD
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