номер части Производитель / Марка Краткое описание Статус деталиКоличество каналовНапряжение - изоляцияКоэффициент передачи в реальном времени (мин.)Коэффициент передачи тока (макс.)Время включения / выключения (Тип)Время нарастания / падения (Тип)Тип вводаТип выходаНапряжение - выход (макс.)Текущий - выход / каналНапряжение - Вперед (Vf) (Тип)Current - DC Forward (If) (Max)Vce Saturation (Макс.)Рабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
Broadcom Limited OPTOISOLATOR 5KV TRANSISTOR 4SMD в производстве15000Vrms200% @ 5mA400% @ 5mA
-
4µs, 3µsDCTransistor70V50mA1.2V50mA200mV-30°C ~ 100°CSMD Поверхностный монтаж4-SMD, Gull Wing4-SMD
Broadcom Limited OPTOISO 3.75KV TRANSISTOR 4MINIFLAT в производстве13750Vrms200% @ 5mA400% @ 5mA
-
4µs, 3µsDCTransistor80V50mA1.2V50mA200mV-55°C ~ 100°CSMD Поверхностный монтаж4-SMD, Gull Wing4-Mini-Flat
Broadcom Limited OPTOISOLATOR 3KV TRANSISTOR 4SOIC в производстве13000Vrms50% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.2V50mA400mV-55°C ~ 110°CSMD Поверхностный монтаж4-SOIC (0.173", 4.40mm Width)4-SO
Broadcom Limited OPTOISOLATOR 3KV TRANSISTOR 4-SO в производстве13000Vrms300% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.2V50mA400mV-55°C ~ 110°CSMD Поверхностный монтаж4-SOIC (0.173", 4.40mm Width)4-SO
Broadcom Limited OPTOISOLATOR 3KV TRANSISTOR 4SOIC в производстве13000Vrms200% @ 5mA400% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.2V50mA400mV-55°C ~ 110°CSMD Поверхностный монтаж4-SOIC (0.173", 4.40mm Width)4-SO
Broadcom Limited OPTOISOLATOR 3KV TRANSISTOR 4-SO в производстве13000Vrms50% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.2V50mA400mV-55°C ~ 110°CSMD Поверхностный монтаж4-SOIC (0.173", 4.40mm Width)4-SO
Broadcom Limited OPTOISOLATOR 3KV TRANSISTOR 4SOIC в производстве13000Vrms80% @ 5mA160% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.2V50mA400mV-55°C ~ 110°CSMD Поверхностный монтаж4-SOIC (0.173", 4.40mm Width)4-SO
Broadcom Limited OPTOISO 3.75KV TRANSISTOR 4SOIC в производстве13750Vrms50% @ 5mA600% @ 5mA
-
4µs, 3µsDCTransistor80V50mA1.2V50mA200mV-55°C ~ 100°CSMD Поверхностный монтаж4-SOIC (0.209", 5.30mm Width)4-SO
Broadcom Limited OPTOISO 3.75KV TRANSISTOR 4MINIFLAT в производстве13750Vrms130% @ 5mA260% @ 5mA
-
4µs, 3µsDCTransistor80V50mA1.2V50mA200mV-55°C ~ 100°CSMD Поверхностный монтаж4-SMD, Gull Wing4-Mini-Flat
Broadcom Limited OPTOISOLATOR 3KV TRANSISTOR 4-SO в производстве13000Vrms130% @ 5mA260% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.2V50mA400mV-55°C ~ 110°CSMD Поверхностный монтаж4-SOIC (0.173", 4.40mm Width)4-SO
Broadcom Limited OPTOISOLATOR 3KV TRANSISTOR 4-SO в производстве13000Vrms80% @ 5mA160% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.2V50mA400mV-55°C ~ 110°CSMD Поверхностный монтаж4-SOIC (0.173", 4.40mm Width)4-SO
Broadcom Limited OPTOISOLATOR 3KV TRANSISTOR 4SOIC в производстве13000Vrms20% @ 1mA400% @ 1mA3µs, 3µs2µs, 3µsAC, DCTransistor80V50mA1.2V50mA400mV-55°C ~ 110°CSMD Поверхностный монтаж4-SOIC (0.173", 4.40mm Width)4-SO
Broadcom Limited OPTOISOLATOR 3KV TRANSISTOR 4-SO в производстве13000Vrms130% @ 5mA260% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.2V50mA400mV-55°C ~ 110°CSMD Поверхностный монтаж4-SOIC (0.173", 4.40mm Width)4-SO
Broadcom Limited OPTOISO 3.75KV TRANSISTOR 4MINIFLAT в производстве13750Vrms50% @ 1mA150% @ 1mA
-
4µs, 3µsAC, DCTransistor35V50mA1.2V50mA200mV-55°C ~ 100°CSMD Поверхностный монтаж4-SMD, Gull Wing4-Mini-Flat
Broadcom Limited OPTOISOLATOR 3KV 2CH TRANSISTOR 8SOIC в производстве23000Vrms50% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.2V50mA400mV-55°C ~ 110°CSMD Поверхностный монтаж8-SOIC (0.173", 4.40mm Width)8-SO
Broadcom Limited OPTOISO 3KV 4CH TRANSISTOR 16SOIC в производстве43000Vrms100% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.2V50mA400mV-55°C ~ 110°CSMD Поверхностный монтаж16-SOIC (0.173", 4.40mm Width)16-SO
Broadcom Limited OPTOISO 3KV 4CH TRANSISTOR 16SOIC в производстве43000Vrms100% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.2V50mA400mV-55°C ~ 110°CSMD Поверхностный монтаж16-SOIC (0.173", 4.40mm Width)16-SO
Broadcom Limited OPTOISOLATOR 3KV 4CH TRANSISTOR 16-SO в производстве43000Vrms20% @ 1mA400% @ 1mA3µs, 3µs2µs, 3µsAC, DCTransistor80V50mA1.2V50mA400mV-55°C ~ 110°CSMD Поверхностный монтаж16-SOIC (0.173", 4.40mm Width)16-SO
Broadcom Limited OPTOISOLATOR 3.75KV TRANSISTOR 8-SO в производстве13750Vrms21% @ 16mA
-
200ns, 300ns
-
DCTransistor20V8mA1.5V25mA
-
-55°C ~ 100°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
Broadcom Limited OPTOISO 3KV 4CH TRANSISTOR 16SOIC в производстве43000Vrms20% @ 1mA400% @ 1mA3µs, 3µs2µs, 3µsAC, DCTransistor80V50mA1.2V50mA400mV-55°C ~ 110°CSMD Поверхностный монтаж16-SOIC (0.173", 4.40mm Width)16-SO
Broadcom Limited OPTOISOLTR 3.75KV TRANSISTOR 8-DIP GW в производстве13750Vrms19% @ 16mA50% @ 16mA200ns, 600ns
-
DCTransistor20V8mA1.5V25mA
-
-55°C ~ 100°CSMD Поверхностный монтаж8-SMD, Gull Wing8-DIP Gull Wing
Broadcom Limited OPTOISO 3.75KV DARL W/BASE 8SOIC в производстве13750Vrms500% @ 1.6mA2600% @ 1.6mA200ns, 2µs
-
DCDarlington with Base18V60mA1.4V20mA
-
-40°C ~ 85°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
Broadcom Limited OPTOISO 5KV TRANSISTOR 6-SO STRETCHED в производстве15000Vrms93% @ 3mA200% @ 3mA200ns, 380ns
-
DCTransistor24V8mA1.5V20mA
-
-40°C ~ 105°CSMD Поверхностный монтаж6-SOIC (0.268", 6.80mm Width)6-SO Stretched
Broadcom Limited OPTOISO 3.75KV 2CH TRANSISTOR 8DIPGW в производстве23750Vrms19% @ 16mA50% @ 16mA200ns, 600ns
-
DCTransistor20V8mA1.5V25mA
-
-55°C ~ 100°CSMD Поверхностный монтаж8-SMD, Gull Wing8-DIP Gull Wing
Broadcom Limited OPTOISO 3.75KV DARLINGTON 8-SO в производстве13750Vrms600% @ 500µA8000% @ 500µA3µs, 34µs
-
DCDarlington with Base18V60mA1.25V5mA
-
0°C ~ 70°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
Broadcom Limited OPTOISO 3.75KV 2CH TRANSISTOR 8SOIC в производстве23750Vrms7% @ 16mA50% @ 16mA200ns, 1.3µs
-
DCTransistor20V8mA1.5V25mA
-
-55°C ~ 100°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
Broadcom Limited OPTOISO 3.75KV 2CH TRANSISTOR 8SOIC в производстве23750Vrms19% @ 16mA50% @ 16mA200ns, 600ns
-
DCTransistor20V8mA1.5V25mA
-
-55°C ~ 100°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
Broadcom Limited OPTOISOLATOR 4KV TRANSISTOR 5-SO в производстве14000Vrms32% @ 10mA100% @ 10mA150ns, 500ns
-
DCTransistor20V8mA1.55V20mA
-
-40°C ~ 125°CSMD Поверхностный монтаж6-SOIC (0.173", 4.40mm Width), 5 Leads5-SO
Broadcom Limited OPTOISO 3.75KV TRANSISTOR W/BASE 8SO в производстве13750Vrms5% @ 16mA
-
200ns, 1.3µs
-
DCTransistor with Base20V8mA1.5V25mA
-
-55°C ~ 100°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
Broadcom Limited OPTOISO 5KV DARL W/BASE 8DIP в производстве15000Vrms200% @ 12mA
-
11µs, 11µs
-
DCDarlington with Base18V60mA1.45V20mA
-
-40°C ~ 85°CThrough Hole8-DIP (0.400", 10.16mm)8-DIP
Broadcom Limited OPTOISO 7.5KV TRANSISTOR 8SO в производстве17500Vrms31% @ 12mA80% @ 12mA800ns, 1µs
-
DCTransistor24V8mA1.45V20mA
-
-40°C ~ 105°CSMD Поверхностный монтаж8-SOIC (0.535", 13.60mm Width)8-SO Stretched
Broadcom Limited OPTOISO 3.75KV TRANSISTOR W/BASE 8SO в производстве13750Vrms15% @ 16mA
-
200ns, 600ns
-
DCTransistor with Base20V8mA1.5V25mA
-
-55°C ~ 100°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
Broadcom Limited OPTOISOLATOR 5KV TRANSISTOR 8DIP в производстве15000Vrms15% @ 16mA
-
1µs, 1µs (Max)
-
DCTransistor with Base20V8mA1.68V25mA
-
-55°C ~ 85°CThrough Hole8-DIP (0.400", 10.16mm)8-DIP
Broadcom Limited OPTOISO 3.75KV TRANSISTOR W/BASE 8SO в производстве13750Vrms19% @ 16mA50% @ 16mA200ns, 600ns
-
DCTransistor with Base7V8mA1.5V25mA
-
-55°C ~ 100°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
Broadcom Limited OPTOISO 3.75KV 2CH PHVOLT 8DIPGW в производстве23750Vrms
-
-
280µs, 30µs
-
DCPhotovoltaic7V20µA1.3V30mA
-
-40°C ~ 85°CSMD Поверхностный монтаж8-SMD, Gull Wing8-DIP Gull Wing
Broadcom Limited OPTOISO 3.75KV 2CH DARLNG 8-SO в производстве23750Vrms500% @ 1.6mA2600% @ 1.6mA5µs, 10µs
-
DCDarlington18V60mA1.4V12mA100mV0°C ~ 70°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
Broadcom Limited OPTOISOLATOR 3.75KV TRANSISTOR 8-DIP в производстве13750Vrms19% @ 16mA50% @ 16mA1µs, 1µs (Max)
-
DCTransistor20V8mA1.5V25mA
-
-55°C ~ 100°CThrough Hole8-DIP (0.300", 7.62mm)8-DIP
Broadcom Limited OPTOISOLTR 3.75KV TRANSISTOR 8-DIP GW в производстве13750Vrms19% @ 16mA50% @ 16mA200ns, 600ns
-
DCTransistor20V8mA1.5V25mA
-
-55°C ~ 100°CSMD Поверхностный монтаж8-SMD, Gull Wing8-DIP Gull Wing
Broadcom Limited OPTOISO 5KV LINEAR PHVOLT 8DIPGW в производстве15000Vrms0.36% @ 10mA0.72% @ 10mA
-
-
DCPhotovoltaic, Linearized
-
-
1.6V25mA
-
-55°C ~ 100°CSMD Поверхностный монтаж8-SMD, Gull Wing8-DIP Gull Wing
Broadcom Limited OPTOISO 3.75KV 2CH TRANSISTOR 8DIP в производстве23750Vrms19% @ 16mA50% @ 16mA200ns, 600ns
-
DCTransistor20V8mA1.5V25mA
-
-55°C ~ 100°CThrough Hole8-DIP (0.300", 7.62mm)8-DIP
Broadcom Limited OPTOISO 3.75KV DARL W/BASE 8SOIC в производстве13750Vrms600% @ 500µA8000% @ 500µA3µs, 34µs
-
DCDarlington with Base18V60mA1.25V5mA
-
0°C ~ 70°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
Broadcom Limited OPTOISO 3.75KV 2CH TRANSISTOR 8DIPGW в производстве23750Vrms19% @ 16mA50% @ 16mA200ns, 600ns
-
DCTransistor20V8mA1.5V25mA
-
-55°C ~ 100°CSMD Поверхностный монтаж8-SMD, Gull Wing8-DIP Gull Wing
Broadcom Limited OPTOISO 5KV TRANSISTOR 8DIP GULL WING в производстве15000Vrms15% @ 16mA
-
1µs, 1µs (Max)
-
DCTransistor20V8mA1.68V25mA
-
-55°C ~ 85°CSMD Поверхностный монтаж8-SMD, Gull Wing8-DIP Gull Wing
Broadcom Limited OPTOISO 3.75KV 2CH TRANSISTOR 8SOIC в производстве23750Vrms19% @ 16mA50% @ 16mA200ns, 600ns
-
DCTransistor20V8mA1.5V25mA
-
-55°C ~ 100°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
Broadcom Limited OPTOISOLATOR 4KV TRANSISTOR 5-SO в производстве14000Vrms32% @ 10mA100% @ 10mA150ns, 500ns
-
DCTransistor20V8mA1.55V20mA
-
-40°C ~ 125°CSMD Поверхностный монтаж6-SOIC (0.173", 4.40mm Width), 5 Leads5-SO
Broadcom Limited OPTOISO 3.75KV 2CH PHVOLT 8DIPGW в производстве23750Vrms
-
-
280µs, 30µs
-
DCPhotovoltaic7V20µA1.3V30mA
-
-40°C ~ 85°CSMD Поверхностный монтаж8-SMD, Gull Wing8-DIP Gull Wing
Broadcom Limited OPTOISOLTR 3.75KV 2CH TRANSISTOR 8-SO в производстве23750Vrms19% @ 16mA50% @ 16mA200ns, 600ns
-
DCTransistor7V8mA1.5V25mA
-
-55°C ~ 100°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
Broadcom Limited OPTOISO 5KV LINEAR PHVOLT 8DIP в производстве15000Vrms0.25% @ 10mA0.75% @ 10mA
-
-
DCPhotovoltaic, Linearized
-
-
1.6V25mA
-
-55°C ~ 100°CThrough Hole8-DIP (0.400", 10.16mm)8-DIP
Broadcom Limited OPTOISO 5KV LINEAR PHVOLT 8DIPGW в производстве15000Vrms0.25% @ 10mA0.75% @ 10mA
-
-
DCPhotovoltaic, Linearized
-
-
1.6V25mA
-
-55°C ~ 100°CSMD Поверхностный монтаж8-SMD, Gull Wing8-DIP Gull Wing
Broadcom Limited OPTOISO 3.75KV DARLINGTON 8-SO в производстве13750Vrms
-
-
4µs, 10µs20µs, 0.3µsAC, DCDarlington20V30mA
-
-
-
-40°C ~ 85°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
  1. 1
  2. 2
  3. 3
  4. 4
  5. 5
  6. 6
  7. 7
  8. 8
  9. 9
  10. 10