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Производители для Оптоизоляторы - транзистор, фотогальванический выход

Broadcom Limited
CEL (California Eastern Laboratories)
Everlight Electronics
Infineon Technologies
Isocom
IXYS Integrated Circuits Division
Lite-On, Inc.
Lumex, Inc.
ON Semiconductor
Panasonic
QT Brightek
Renesas Electronics America
Sharp Microelectronics
Skyworks Solutions, Inc.
Socle Technology Corporation
Standex-Meder Electronics
Taiwan Semiconductor
Toshiba Semiconductor and Storage
TT Electronics/Optek Technology
Vishay
Weidmüller
номер части Производитель / Марка Краткое описание Статус деталиКоличество каналовНапряжение - изоляцияКоэффициент передачи в реальном времени (мин.)Коэффициент передачи тока (макс.)Время включения / выключения (Тип)Время нарастания / падения (Тип)Тип вводаТип выходаНапряжение - выход (макс.)Текущий - выход / каналНапряжение - Вперед (Vf) (Тип)Current - DC Forward (If) (Max)Vce Saturation (Макс.)Рабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
TLP183(GB-TPL,E
 Toshiba Semiconductor and Storage OPTOISO 3.75KV TRANSISTOR 6-SO 4 LEAD в производстве13750Vrms100% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж6-SOIC (0.179", 4.55mm Width), 4 Leads6-SO, 4 Lead
TLP182(GB-TPL,E
 Toshiba Semiconductor and Storage OPTOISO 3.75KV TRANSISTOR 6-SO 4 LEAD в производстве13750Vrms100% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsAC, DCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж6-SOIC (0.179", 4.55mm Width), 4 Leads6-SO, 4 Lead
TLP184(GB-TPL,E)
 Toshiba Semiconductor and Storage OPTOISO 3.75KV TRANSISTOR 6-SO 4 LEAD в производстве13750Vrms100% @ 5mA400% @ 5mA9µs, 9µs5µs, 9µsAC, DCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж6-SOIC (0.179", 4.55mm Width), 4 Leads6-SO, 4 Lead
TLP184(TPR,E)
 Toshiba Semiconductor and Storage OPTOISO 3.75KV TRANSISTOR 6-SO 4 LEAD в производстве13750Vrms50% @ 5mA400% @ 5mA9µs, 9µs5µs, 9µsAC, DCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж6-SOIC (0.179", 4.55mm Width), 4 Leads6-SO, 4 Lead
TLP785(GR-TP6,F)
 Toshiba Semiconductor and Storage OPTOISOLATR 5KV TRANSISTOR 4-SMD в производстве15000Vrms100% @ 5mA300% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.15V60mA400mV-55°C ~ 110°CSMD Поверхностный монтаж4-SMD, Gull Wing4-SMD
TLP290-4(TP,E
 Toshiba Semiconductor and Storage OPTOISOLTR 2.5KV 4CH TRANSISTOR 16-SO в производстве42500Vrms50% @ 5mA400% @ 5mA3µs, 3µs2µs, 3µsAC, DCTransistor80V50mA1.2V50mA400mV-55°C ~ 110°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
TLP290-4(GB-TP,E)
 Toshiba Semiconductor and Storage OPTOISOLTR 2.5KV 4CH TRANSISTOR 16-SO в производстве42500Vrms100% @ 5mA400% @ 5mA3µs, 3µs2µs, 3µsAC, DCTransistor80V50mA1.2V50mA400mV-55°C ~ 110°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
TLP293-4(GB-TP,E
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR SO16 в производстве43750Vrms100% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
TLP109(TPR,E)
 Toshiba Semiconductor and Storage OPTOISO 3.75KV TRANSISTOR 6-SO 5 LEAD в производстве13750Vrms20% @ 16mA
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800ns, 800ns (Max)
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DCTransistor20V8mA1.64V20mA
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-55°C ~ 125°CSMD Поверхностный монтаж6-SOIC (0.179", 4.55mm Width), 5 Leads6-SO, 5 Lead
TLP109(TPL,E
 Toshiba Semiconductor and Storage OPTOISO 3.75KV TRANSISTOR 6-SO 5 LEAD в производстве13750Vrms20% @ 16mA
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800ns, 800ns (Max)
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DCTransistor20V8mA1.64V20mA
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-55°C ~ 125°CSMD Поверхностный монтаж6-SOIC (0.179", 4.55mm Width), 5 Leads6-SO, 5 Lead
TLP292-4(4LGBTPE
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR SO16 в производстве43750Vrms100% @ 500µA600% @ 500µA3µs, 3µs2µs, 3µsAC, DCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
TLP3906(TPL,E
 Toshiba Semiconductor and Storage OPTOISO 3.75KV PHVOLT SO6 в производстве13750Vrms
-
-
200µs, 300µs
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DCPhotovoltaic7V12µA1.65V30mA
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-40°C ~ 125°CSMD Поверхностный монтаж6-SOIC (0.179", 4.55mm Width), 4 Leads6-SO, 4 Lead
TLP190B(TPR,U,C,F)
 Toshiba Semiconductor and Storage OPTOISOLTR 2.5KV PHVOLT 6-MFSOP в производстве12500Vrms
-
-
200µs, 1ms
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DCPhotovoltaic8V12µA1.4V50mA
-
-40°C ~ 85°CSMD Поверхностный монтаж6-SMD (4 Leads), Gull Wing6-MFSOP, 4 Lead
TLP291-4(GB,E)
 Toshiba Semiconductor and Storage OPTOISOLTR 2.5KV 4CH TRANSISTOR 16-SO в производстве42500Vrms100% @ 5mA400% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.2V50mA400mV-55°C ~ 110°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
TLP372(F)
 Toshiba Semiconductor and Storage OPTOISOLTR 5KV DARLINGTON 6-DIP в производстве15000Vrms1000% @ 1mA
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50µs, 15µs40µs, 15µsDCDarlington300V150mA1.15V60mA1.2V-55°C ~ 100°CThrough Hole6-DIP (0.300", 7.62mm)6-DIP
TLP290-4(GB,E)
 Toshiba Semiconductor and Storage OPTOISOLTR 2.5KV 4CH TRANSISTOR 16-SO в производстве42500Vrms100% @ 5mA400% @ 5mA3µs, 3µs2µs, 3µsAC, DCTransistor80V50mA1.2V50mA400mV-55°C ~ 110°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
TLP291(BLL-TP,SE
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR 4-SO в производстве13750Vrms200% @ 5mA400% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 110°CSMD Поверхностный монтаж4-SOIC (0.179", 4.55mm Width)4-SO
TLP183(TPL,E
 Toshiba Semiconductor and Storage OPTOISO 3.75KV TRANSISTOR 6-SO 4 LEAD в производстве13750Vrms50% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж6-SOIC (0.179", 4.55mm Width), 4 Leads6-SO, 4 Lead
TLP2303(TPL,E
 Toshiba Semiconductor and Storage OPTOISO 3.75KV TRANSISTOR 6-SO 5 LEAD в производстве13750Vrms500% @ 5mA
-
-
-
DCTransistor18V80mA
-
20mA
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-40°C ~ 125°CSMD Поверхностный монтаж6-SOIC (0.179", 4.55mm Width), 5 Leads6-SO, 5 Lead
TLP387(D4-TPL,E
 Toshiba Semiconductor and Storage TRANSISTOR OPTOCOUPLER HIGH VCEO в производстве15000Vrms1000% @ 1mA
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50µs, 15µs40µs, 15µsDCDarlington300V150mA1.25V50mA1V-55°C ~ 110°CSMD Поверхностный монтаж6-SOIC (0.173", 4.40mm Width), 4 Leads6-SO
TLP293-4(V4GBTPE
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR SO16 в производстве43750Vrms100% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
TLP293-4(V4GBTRE
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR SO16 в производстве43750Vrms100% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
TLP293-4(LGBTR,E
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR SO16 в производстве43750Vrms100% @ 500µA600% @ 500µA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
TLP292-4(LGBTR,E
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR SO16 в производстве43750Vrms100% @ 500µA600% @ 500µA3µs, 3µs2µs, 3µsAC, DCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
TLP292-4(V4LATPE
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR SO16 в производстве43750Vrms50% @ 500µA600% @ 500µA3µs, 3µs2µs, 3µsAC, DCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
TLP292-4(V4-TR,E
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR SO16 в производстве43750Vrms50% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsAC, DCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
TLP785(GB,F)
 Toshiba Semiconductor and Storage OPTOISOLATR 5KV TRANSISTOR 4-DIP в производстве15000Vrms100% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.15V60mA400mV-55°C ~ 110°CThrough Hole4-DIP (0.300", 7.62mm)4-DIP
TLP785(BL,F)
 Toshiba Semiconductor and Storage OPTOISOLATR 5KV TRANSISTOR 4-DIP в производстве15000Vrms200% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.15V60mA400mV-55°C ~ 110°CThrough Hole4-DIP (0.300", 7.62mm)4-DIP
TLP785(F)
 Toshiba Semiconductor and Storage OPTOISOLATR 5KV TRANSISTOR 4-DIP в производстве15000Vrms50% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.15V60mA400mV-55°C ~ 110°CThrough Hole4-DIP (0.300", 7.62mm)4-DIP
TLP2703(TP,E
 Toshiba Semiconductor and Storage OPTOISO 5KV DARLINGTON SO6L в производстве15000Vrms900% @ 500µA8000% @ 500µA330ns, 2.5µs
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DCDarlington18V80mA1.47V20mA
-
-40°C ~ 125°CSMD Поверхностный монтаж6-SOIC (0.295", 7.50mm Width)6-SO
TLP124F
 Toshiba Semiconductor and Storage OPTOISOLTR 3.75KV TRANSISTOR 6-MFSOP устарелый13750Vrms100% @ 1mA1200% @ 1mA10µs, 8µs8µs, 8µsDCTransistor80V50mA1.15V50mA400mV-55°C ~ 100°CSMD Поверхностный монтаж6-SMD (4 Leads), Gull Wing6-MFSOP, 4 Lead
TLP624LF1F
 Toshiba Semiconductor and Storage OPTOISOLATR 5KV TRANSISTOR 4-SMD в производстве15000Vrms100% @ 1mA1200% @ 1mA10µs, 8µs8µs, 8µsDCTransistor55V50mA1.15V60mA400mV-55°C ~ 100°CSMD Поверхностный монтаж4-SMD, Gull Wing4-SMD
TLP2309(E)
 Toshiba Semiconductor and Storage OPTOISO 3.75KV TRANSISTOR 6-SO 5 LEAD в производстве13750Vrms15% @ 16mA
-
1µs, 1µs (Max)
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DCTransistor20V8mA1.55V25mA
-
-40°C ~ 110°CSMD Поверхностный монтаж6-SOIC (0.179", 4.55mm Width), 5 Leads6-SO, 5 Lead
TLP293-4(GB,E
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR SO16 в производстве43750Vrms100% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
TLP292-4(LGB,E
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR SO16 в производстве43750Vrms100% @ 500µA600% @ 500µA3µs, 3µs2µs, 3µsAC, DCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
TLP626(F)
 Toshiba Semiconductor and Storage OPTOISOLATR 5KV TRANSISTOR 4-DIP в производстве15000Vrms100% @ 1mA1200% @ 1mA10µs, 8µs8µs, 8µsAC, DCTransistor55V50mA1.15V60mA400mV-55°C ~ 100°CThrough Hole4-DIP (0.300", 7.62mm)4-DIP
TLP109(E
 Toshiba Semiconductor and Storage OPTOISO 3.75KV TRANSISTOR 6-SO 5 LEAD в производстве13750Vrms20% @ 16mA
-
800ns, 800ns (Max)
-
DCTransistor20V8mA1.64V20mA
-
-55°C ~ 125°CSMD Поверхностный монтаж6-SOIC (0.179", 4.55mm Width), 5 Leads6-SO, 5 Lead
TLP2530(F)
 Toshiba Semiconductor and Storage OPTOISOLTR 2.5KV 2CH TRANSISTOR 8-DIP в производстве22500Vrms7% @ 16mA
-
300ns, 500ns
-
DCTransistor15V
-
1.65V25mA
-
-55°C ~ 100°CThrough Hole8-DIP (0.300", 7.62mm)8-DIP
TLP591B(C,F)
 Toshiba Semiconductor and Storage OPTOISOLATOR 2.5KV PHVOLT 6-DIP в производстве12500Vrms
-
-
200µs, 3ms
-
DCPhotovoltaic7V24µA1.4V50mA
-
-55°C ~ 125°CThrough Hole6-DIP (0.300", 7.62mm), 5 Leads6-DIP, 5 Lead
TLP785(TP6,F)
 Toshiba Semiconductor and Storage OPTOISOLATR 5KV TRANSISTOR 4-SMD в производстве15000Vrms50% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.15V60mA400mV-55°C ~ 110°CSMD Поверхностный монтаж4-SMD, Gull Wing4-SMD
TLP293-4(LA-TR,E
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR SO16 в производстве43750Vrms50% @ 500µA600% @ 500µA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
TLP293-4(TPR,E
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR SO16 в производстве43750Vrms50% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
TLP292-4(LA-TP,E
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR SO16 в производстве43750Vrms50% @ 500µA600% @ 500µA3µs, 3µs2µs, 3µsAC, DCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
TLP292-4(V4GBTRE
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR SO16 в производстве43750Vrms100% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsAC, DCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
TLP292-4(V4LATRE
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR SO16 в производстве43750Vrms50% @ 500µA600% @ 500µA3µs, 3µs2µs, 3µsAC, DCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
TLP388(TPL,E
 Toshiba Semiconductor and Storage TRANSISTOR OPTOCOUPLER HIGH VCEO в производстве15000Vrms50% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor350V50mA1.25V50mA400mV-55°C ~ 125°CSMD Поверхностный монтаж6-SOIC (0.173", 4.40mm Width), 4 Leads6-SO
TLP388(GB-TPL,E
 Toshiba Semiconductor and Storage TRANSISTOR OPTOCOUPLER HIGH VCEO в производстве15000Vrms100% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor350V50mA1.25V50mA400mV-55°C ~ 125°CSMD Поверхностный монтаж6-SOIC (0.173", 4.40mm Width), 4 Leads6-SO
TLP388(D4-TPL,E
 Toshiba Semiconductor and Storage TRANSISTOR OPTOCOUPLER HIGH VCEO в производстве15000Vrms50% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor350V50mA1.25V50mA400mV-55°C ~ 125°CSMD Поверхностный монтаж6-SOIC (0.173", 4.40mm Width), 4 Leads6-SO
TLP388(D4GB-TL,E
 Toshiba Semiconductor and Storage TRANSISTOR OPTOCOUPLER HIGH VCEO в производстве15000Vrms100% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor350V50mA1.25V50mA400mV-55°C ~ 125°CSMD Поверхностный монтаж6-SOIC (0.173", 4.40mm Width), 4 Leads6-SO
TLP387(TPL,E
 Toshiba Semiconductor and Storage TRANSISTOR OPTOCOUPLER HIGH VCEO в производстве15000Vrms1000% @ 1mA
-
50µs, 15µs40µs, 15µsDCDarlington300V150mA1.25V50mA1V-55°C ~ 110°CSMD Поверхностный монтаж6-SOIC (0.173", 4.40mm Width), 4 Leads6-SO
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