номер части Производитель / Марка Краткое описание Статус деталиНапряжение - Zener (Nom) (Vz)ТолерантностьМощность - макс.Импеданс (макс.) (Zzt)Текущий - обратный утечек @ VrНапряжение - Вперед (Vf) (Макс.) @ ЕслиРабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
Central Semiconductor Corp DIODE 6.2V 325MW SOT363 устарелый6.2V±5%325mW20 Ohms
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-65°C ~ 150°CSMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363SOT-363
Central Semiconductor Corp DIODE 14V 500MW DO35 в производстве14V±5%500mW15 Ohms100nA @ 10V1.1V @ 200mA-65°C ~ 200°CThrough HoleDO-204AH, DO-35, AxialDO-35
Central Semiconductor Corp DIODE 3.6V 1W DO41 устарелый3.6V±5%1W10 Ohms100µA @ 1V1.2V @ 200mA-65°C ~ 200°CThrough HoleDO-204AL, DO-41, AxialDO-41
Central Semiconductor Corp DIODE 4.3V 1W DO41 устарелый4.3V±5%1W9 Ohms10µA @ 1V1.2V @ 200mA-65°C ~ 200°CThrough HoleDO-204AL, DO-41, AxialDO-41
Central Semiconductor Corp DIODE 15V 1W DO41 Discontinued at -15V±5%1W14 Ohms5µA @ 11.4V1.2V @ 200mA-65°C ~ 200°CThrough HoleDO-204AL, DO-41, AxialDO-41
Central Semiconductor Corp DIODE 13V 500MW DO35 в производстве13V±5%500mW13 Ohms500nA @ 9.9V1.1V @ 200mA-65°C ~ 200°CThrough HoleDO-204AH, DO-35, AxialDO-35
Central Semiconductor Corp DIODE 14V 500MW DO35 в производстве14V±5%500mW15 Ohms100nA @ 10V1.1V @ 200mA-65°C ~ 200°CThrough HoleDO-204AH, DO-35, AxialDO-35
Central Semiconductor Corp DIODE 11V 350MW SOT23 в производстве11V±5%350mW20 Ohms100nA @ 8V900mV @ 10mA-65°C ~ 150°CSMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
Central Semiconductor Corp DIODE 20V 350MW SOT23 в производстве20V±5%350mW55 Ohms50nA @ 14V900mV @ 10mA-65°C ~ 150°CSMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
Central Semiconductor Corp DIODE 24V 350MW SOT23 в производстве24V±5%350mW70 Ohms50nA @ 16.8V900mV @ 10mA-65°C ~ 150°CSMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
Central Semiconductor Corp DIODE 27V 350MW SOT23 в производстве27V±5%350mW80 Ohms50nA @ 18.9V900mV @ 10mA-65°C ~ 150°CSMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
Central Semiconductor Corp DIODE 2.4V 350MW SOT23 в производстве2.4V±5%350mW100 Ohms50µA @ 1V900mV @ 10mA-65°C ~ 150°CSMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
Central Semiconductor Corp DIODE 3V 350MW SOT23 в производстве3V±5%350mW95 Ohms10µA @ 1V900mV @ 10mA-65°C ~ 150°CSMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
Central Semiconductor Corp DIODE 3.3V 350MW SOT23 в производстве3.3V±5%350mW95 Ohms5µA @ 1V900mV @ 10mA-65°C ~ 150°CSMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
Central Semiconductor Corp DIODE 8.2V 350MW SOT23 в производстве8.2V±5%350mW15 Ohms700nA @ 5V900mV @ 10mA-65°C ~ 150°CSMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
Central Semiconductor Corp DIODE 5.6V 500MW 120PCS в производстве5.6V±5%500mW11 Ohms5µA @ 3V1.1V @ 200mA-65°C ~ 150°CSMD Поверхностный монтажDieDie
Central Semiconductor Corp DIODE 91V 1W MELF устарелый91V±5%1W250 Ohms5µA @ 69.2V1.2V @ 200mA-65°C ~ 200°CSMD Поверхностный монтажDO-213AB, MELFMELF
Central Semiconductor Corp DIODE 100V 1W MELF устарелый100V±5%1W350 Ohms5µA @ 76V1.2V @ 200mA-65°C ~ 200°CSMD Поверхностный монтажDO-213AB, MELFMELF
Central Semiconductor Corp DIODE 5.6V 500MW DIE 1400 в производстве5.6V±5%500mW11 Ohms5µA @ 3V1.1V @ 200mA-65°C ~ 150°CSMD Поверхностный монтажDieDie
Central Semiconductor Corp DIODE 3.3V 1W DO41 устарелый3.3V±5%1W10 Ohms100µA @ 1V1.2V @ 200mA-65°C ~ 200°CThrough HoleDO-204AL, DO-41, AxialDO-41
Central Semiconductor Corp DIODE 4.3V 1W DO41 устарелый4.3V±5%1W9 Ohms10µA @ 1V1.2V @ 200mA-65°C ~ 200°CThrough HoleDO-204AL, DO-41, AxialDO-41
Central Semiconductor Corp DIODE 4.7V 1W DO41 в производстве4.7V±5%1W8 Ohms10µA @ 1V1.2V @ 200mA-65°C ~ 200°CThrough HoleDO-204AL, DO-41, AxialDO-41
Central Semiconductor Corp DIODE 5.1V 1W DO41 в производстве5.1V±5%1W7 Ohms10µA @ 1V1.2V @ 200mA-65°C ~ 200°CThrough HoleDO-204AL, DO-41, AxialDO-41
Central Semiconductor Corp DIODE 5.6V 1W DO41 в производстве5.6V±5%1W5 Ohms10µA @ 2V1.2V @ 200mA-65°C ~ 200°CThrough HoleDO-204AL, DO-41, AxialDO-41
Central Semiconductor Corp DIODE 8.2V 1W DO41 в производстве8.2V±5%1W4.5 Ohms10µA @ 6V1.2V @ 200mA-65°C ~ 200°CThrough HoleDO-204AL, DO-41, AxialDO-41
Central Semiconductor Corp DIODE 9.1V 1W DO41 в производстве9.1V±5%1W5 Ohms10µA @ 7V1.2V @ 200mA-65°C ~ 200°CThrough HoleDO-204AL, DO-41, AxialDO-41
Central Semiconductor Corp DIODE 11V 1W DO41 в производстве11V±5%1W8 Ohms5µA @ 8.4V1.2V @ 200mA-65°C ~ 200°CThrough HoleDO-204AL, DO-41, AxialDO-41
Central Semiconductor Corp DIODE 12V 1W DO41 в производстве12V±5%1W9 Ohms5µA @ 9.1V1.2V @ 200mA-65°C ~ 200°CThrough HoleDO-204AL, DO-41, AxialDO-41
Central Semiconductor Corp DIODE 15V 1W DO41 в производстве15V±5%1W14 Ohms5µA @ 11.4V1.2V @ 200mA-65°C ~ 200°CThrough HoleDO-204AL, DO-41, AxialDO-41
Central Semiconductor Corp DIODE 16V 1W DO41 в производстве16V±5%1W16 Ohms5µA @ 12.2V1.2V @ 200mA-65°C ~ 200°CThrough HoleDO-204AL, DO-41, AxialDO-41
Central Semiconductor Corp DIODE 18V 1W DO41 в производстве18V±5%1W20 Ohms5µA @ 13.7V1.2V @ 200mA-65°C ~ 200°CThrough HoleDO-204AL, DO-41, AxialDO-41
Central Semiconductor Corp DIODE 20V 1W DO41 в производстве20V±5%1W22 Ohms5µA @ 15.2V1.2V @ 200mA-65°C ~ 200°CThrough HoleDO-204AL, DO-41, AxialDO-41
Central Semiconductor Corp DIODE 22V 1W DO41 в производстве22V±5%1W23 Ohms5µA @ 16.7V1.2V @ 200mA-65°C ~ 200°CThrough HoleDO-204AL, DO-41, AxialDO-41
Central Semiconductor Corp DIODE 24V 1W DO41 в производстве24V±5%1W25 Ohms5µA @ 18.2V1.2V @ 200mA-65°C ~ 200°CThrough HoleDO-204AL, DO-41, AxialDO-41
Central Semiconductor Corp DIODE 27V 1W DO41 в производстве27V±5%1W35 Ohms5µA @ 20.6V1.2V @ 200mA-65°C ~ 200°CThrough HoleDO-204AL, DO-41, AxialDO-41
Central Semiconductor Corp DIODE 30V 1W DO41 в производстве30V±5%1W40 Ohms5µA @ 22.8V1.2V @ 200mA-65°C ~ 200°CThrough HoleDO-204AL, DO-41, AxialDO-41
Central Semiconductor Corp DIODE 68V 1W DO41 в производстве68V±5%1W150 Ohms5µA @ 51.7V1.2V @ 200mA-65°C ~ 200°CThrough HoleDO-204AL, DO-41, AxialDO-41
Central Semiconductor Corp DIODE 2.4V 500MW DO35 в производстве2.4V±5%500mW30 Ohms100µA @ 1V1.1V @ 200mA-65°C ~ 200°CThrough HoleDO-204AH, DO-35, AxialDO-35
Central Semiconductor Corp DIODE 2.7V 500MW DO35 в производстве2.7V±5%500mW30 Ohms75µA @ 1V1.1V @ 200mA-65°C ~ 200°CThrough HoleDO-204AH, DO-35, AxialDO-35
Central Semiconductor Corp DIODE 3V 500MW DO35 в производстве3V±5%500mW29 Ohms50µA @ 1V1.1V @ 200mA-65°C ~ 200°CThrough HoleDO-204AH, DO-35, AxialDO-35
Central Semiconductor Corp DIODE 3.3V 500MW DO35 в производстве3.3V±5%500mW28 Ohms25µA @ 1V1.1V @ 200mA-65°C ~ 200°CThrough HoleDO-204AH, DO-35, AxialDO-35
Central Semiconductor Corp DIODE 3.9V 500MW DO35 в производстве3.9V±5%500mW23 Ohms10µA @ 1V1.1V @ 200mA-65°C ~ 200°CThrough HoleDO-204AH, DO-35, AxialDO-35
Central Semiconductor Corp DIODE 4.7V 500MW DO35 в производстве4.7V±5%500mW19 Ohms5µA @ 2V1.1V @ 200mA-65°C ~ 200°CThrough HoleDO-204AH, DO-35, AxialDO-35
Central Semiconductor Corp DIODE 5.1V 500MW DO35 в производстве5.1V±5%500mW17 Ohms5µA @ 2V1.1V @ 200mA-65°C ~ 200°CThrough HoleDO-204AH, DO-35, AxialDO-35
Central Semiconductor Corp DIODE 5.6V 500MW DO35 в производстве5.6V±5%500mW11 Ohms5µA @ 3V1.1V @ 200mA-65°C ~ 200°CThrough HoleDO-204AH, DO-35, AxialDO-35
Central Semiconductor Corp DIODE 6V 500MW DO35 в производстве6V±5%500mW7 Ohms5µA @ 3.5V1.1V @ 200mA-65°C ~ 200°CThrough HoleDO-204AH, DO-35, AxialDO-35
Central Semiconductor Corp DIODE 6.2V 500MW DO35 в производстве6.2V±5%500mW7 Ohms5µA @ 4V1.1V @ 200mA-65°C ~ 200°CThrough HoleDO-204AH, DO-35, AxialDO-35
Central Semiconductor Corp DIODE 7.5V 500MW DO35 в производстве7.5V±5%500mW6 Ohms3µA @ 6V1.1V @ 200mA-65°C ~ 200°CThrough HoleDO-204AH, DO-35, AxialDO-35
Central Semiconductor Corp DIODE 8.7V 500MW DO35 в производстве8.7V±5%500mW8 Ohms3µA @ 6.5V1.1V @ 200mA-65°C ~ 200°CThrough HoleDO-204AH, DO-35, AxialDO-35
Central Semiconductor Corp DIODE 9.1V 500MW DO35 в производстве9.1V±5%500mW10 Ohms3µA @ 7V1.1V @ 200mA-65°C ~ 200°CThrough HoleDO-204AH, DO-35, AxialDO-35
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