номер части Производитель / Марка Краткое описание Статус деталиТип транзистораТок - коллектор (Ic) (макс.)Напряжение - Разрыв эмиттера коллектора (макс.)Vce Saturation (Макс.) @ Ib, IcТок - отсечка коллектора (макс.)Постоянный ток постоянного тока (hFE) (мин.) @ Ic, VceМощность - макс.Частота - переходРабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
Central Semiconductor Corp THROUGH-HOLE TRANSISTOR-SMALL SI в производствеNPN800mA30V1V @ 50mA, 500mA10nA (ICBO)40 @ 150mA, 10V3W250MHz-65°C ~ 200°C (TJ)Through HoleTO-205AD, TO-39-3 Metal CanTO-39
Central Semiconductor Corp THROUGH-HOLE TRANSISTOR-SMALL SI в производствеPNP600mA40V1.6V @ 50mA, 500mA20nA (ICBO)40 @ 150mA, 10V3W200MHz-65°C ~ 200°C (TJ)Through HoleTO-205AD, TO-39-3 Metal CanTO-39
Central Semiconductor Corp THROUGH-HOLE TRANSISTOR-SMALL SI в производствеPNP600mA40V1.6V @ 50mA, 500mA20nA (ICBO)100 @ 150mA, 10V3W200MHz-65°C ~ 200°C (TJ)Through HoleTO-205AD, TO-39-3 Metal CanTO-39
Central Semiconductor Corp THROUGH-HOLE TRANSISTOR-SMALL SI в производствеNPN1A350V500mV @ 4mA, 50mA20µA (ICBO)30 @ 2mA, 10V1W15MHz-65°C ~ 200°C (TJ)Through HoleTO-205AD, TO-39-3 Metal CanTO-39
Central Semiconductor Corp THROUGH-HOLE TRANSISTOR BIPOLAR в производствеNPN8A400V1.5V @ 50mA, 5A100µA
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60W
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-65°C ~ 150°C (TJ)Through HoleTO-220-3TO-220-3
Central Semiconductor Corp THROUGH-HOLE TRANSISTOR-SMALL SI в производствеPNP
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300mW
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-65°C ~ 125°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92
Central Semiconductor Corp THROUGH-HOLE TRANSISTOR-SMALL SI в производствеPNP
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300mW
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-65°C ~ 125°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92
Central Semiconductor Corp TRANSISTOR PNP 40V 1A TO-39 в производствеPNP1A40V600mV @ 125mA, 1A1mA30 @ 250mA, 1V1W3MHz-65°C ~ 200°C (TJ)Through HoleTO-205AD, TO-39-3 Metal CanTO-39
Central Semiconductor Corp THROUGH-HOLE TRANSISTOR-SMALL SI в производствеPNP15A80V3.5V @ 5A, 15A
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25 @ 1A, 4V75W5MHz-65°C ~ 150°C (TJ)Through HoleTO-220-3TO-220-3
Central Semiconductor Corp THROUGH-HOLE TRANSISTOR-SMALL SI в производствеNPN
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50 @ 10mA, 10V
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250MHz
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Through HoleTO-206AA, TO-18-3 Metal CanTO-18
Central Semiconductor Corp THROUGH-HOLE TRANSISTOR-BIPOLAR в производствеPNP15A70V3V @ 3.3A, 10A700µA20 @ 4A, 4V115W2.5MHz-65°C ~ 200°C (TJ)Through HoleTO-204AA, TO-3TO-3
Central Semiconductor Corp TRANSISTOR PNP DARL 40V 2A TO-202 в производствеPNP - Darlington2A50V1.5V @ 2mA, 1A100nA (ICBO)25000 @ 200mA, 5V1W50MHz-65°C ~ 150°C (TJ)Through HoleTO-202 Long TabTO-202
Central Semiconductor Corp THROUGH-HOLE TRANSISTOR-SMALL SI в производствеNPN200mA40V300mV @ 5mA, 50mA
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100 @ 10mA, 1V1.2W300MHz-65°C ~ 200°C (TJ)Through HoleTO-206AA, TO-18-3 Metal CanTO-18
Central Semiconductor Corp THROUGH-HOLE TRANSISTOR-SMALL SI в производствеPNP100mA200V500mV @ 2mA, 20mA250nA (ICBO)40 @ 10mA, 10V1.8W50MHz-65°C ~ 200°C (TJ)Through HoleTO-206AA, TO-18-3 Metal CanTO-18
Central Semiconductor Corp THROUGH-HOLE TRANSISTOR-SMALL SI в производствеPNP100mA300V500mV @ 2mA, 20mA250nA (ICBO)40 @ 10mA, 10V1.8W50MHz-65°C ~ 200°C (TJ)Through HoleTO-206AA, TO-18-3 Metal CanTO-18
Central Semiconductor Corp THROUGH-HOLE TRANSISTOR-SMALL SI в производствеNPN750mA70V1.2V @ 50mA, 500mA100nA (ICBO)100 @ 2mA, 2V1.5W120MHz-65°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92
Central Semiconductor Corp THROUGH-HOLE TRANSISTOR-SMALL SI в производствеPNP1A300V2V @ 5mA, 50mA50µA (ICBO)120 @ 50mA, 10V1W15MHz-65°C ~ 200°C (TJ)Through HoleTO-205AD, TO-39-3 Metal CanTO-39
Central Semiconductor Corp THROUGH-HOLE TRANSISTOR-SMALL SI в производствеNPN100mA300V500mV @ 2mA, 20mA100nA (ICBO)50 @ 30mA, 10V1.8W50MHz-65°C ~ 200°C (TJ)Through HoleTO-206AA, TO-18-3 Metal CanTO-18
Central Semiconductor Corp THROUGH-HOLE TRANSISTOR-SMALL SI в производствеNPN100mA200V500mV @ 2mA, 20mA100nA (ICBO)50 @ 30mA, 10V1.8W50MHz-65°C ~ 200°C (TJ)Through HoleTO-206AA, TO-18-3 Metal CanTO-18
Central Semiconductor Corp THROUGH-HOLE TRANSISTOR-SMALL SI в производствеNPN
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125V
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100nA (ICBO)40 @ 200mA, 1V
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50MHz
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Through HoleTO-206AA, TO-18-3 Metal CanTO-18
Central Semiconductor Corp THROUGH-HOLE TRANSISTOR-SMALL SI в производствеPNP
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125V
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100nA (ICBO)40 @ 200mA, 1V
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50MHz
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Through HoleTO-206AA, TO-18-3 Metal CanTO-18
Central Semiconductor Corp TRANSISTOR-SMALL SI SMD в производствеNPN50mA60V
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1400 @ 1mA, 5V30mW540MHz
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SMD Поверхностный монтажDieDie
Central Semiconductor Corp THROUGH-HOLE TRANSISTOR-SMALL SI в производствеPNP600mA50V1.5V @ 15mA, 150mA100µA (ICBO)20 @ 150mA, 10V2W50MHz-65°C ~ 200°C (TJ)Through HoleTO-205AD, TO-39-3 Metal CanTO-39
Central Semiconductor Corp THROUGH-HOLE TRANSISTOR-SMALL SI в производствеPNP
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40V
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500nA (ICBO)20 @ 150mA, 10V
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90MHz
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Through HoleTO-205AD, TO-39-3 Metal CanTO-39
Central Semiconductor Corp THROUGH-HOLE TRANSISTOR-SMALL SI в производстве
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Through HoleTO-205AD, TO-39-3 Metal CanTO-39
Central Semiconductor Corp THROUGH-HOLE TRANSISTOR-SMALL SI в производствеNPN700mA60V300mV @ 15mA, 150mA
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50 @ 150mA, 10V5W100MHz-65°C ~ 200°C (TJ)Through HoleTO-205AD, TO-39-3 Metal CanTO-39
Central Semiconductor Corp THROUGH-HOLE TRANSISTOR-SMALL SI в производствеNPN15A70V3V @ 3.3A, 10A700µA20 @ 4A, 4V115W2.5MHz-65°C ~ 200°C (TJ)Through HoleTO-204AA, TO-3TO-3
Central Semiconductor Corp TRANSISTOR NPN 60V 25A TO-3 в производствеNPN25A60V4V @ 6.25A, 25A2mA20 @ 10A, 4V200W4MHz-65°C ~ 200°C (TJ)Through HoleTO-204AA, TO-3TO-3
Central Semiconductor Corp TRANSISTOR PNP 40V 2A TO-92 в производствеPNP2A40V500mV @ 200mA, 2A100nA (ICBO)75 @ 1A, 2V625mW75MHz-65°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92
Central Semiconductor Corp TRANSISTOR NPN 120PCS в производствеNPN600mA160V200mV @ 5mA, 50mA50nA (ICBO)80 @ 10mA, 5V
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300MHz-65°C ~ 150°C (TJ)SMD Поверхностный монтажDieDie
Central Semiconductor Corp TRANSISTOR PNP 120PCS в производствеPNP50mA50V300mV @ 1mA, 10mA50nA (ICBO)250 @ 100µA, 5V
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40MHz-65°C ~ 150°C (TJ)SMD Поверхностный монтажDieDie
Central Semiconductor Corp TRANSISTOR NPN 25V 0.5A TO-92 в производствеNPN500mA25V300mV @ 3mA, 50mA100nA (ICBO)180 @ 2mA, 4.5V625mW
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-65°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92
Central Semiconductor Corp TRANSISTOR NPN DARL 80V 8A CHIP 1200 в производствеNPN - Darlington8A80V3V @ 80mA, 8A500µA750 @ 4A, 3V
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4MHz-65°C ~ 200°C (TJ)SMD Поверхностный монтажDieDie
Central Semiconductor Corp TRANSISTOR NPN AMP/SWITCH CHIP 1400 в производствеNPN800mA40V1V @ 50mA, 500mA10nA (ICBO)100 @ 150mA, 10V
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300MHz-65°C ~ 150°C (TJ)SMD Поверхностный монтажDieDie
Central Semiconductor Corp TRANSISTOR NPN HI CURRENT CHIP 1400 в производствеNPN1A80V500mV @ 50mA, 500mA10nA (ICBO)100 @ 150mA, 10V
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100MHz-65°C ~ 150°C (TJ)SMD Поверхностный монтажDieDie
Central Semiconductor Corp TRANSISTOR NPN HV CHIP FORM 1400 в производствеNPN500mA300V500mV @ 2mA, 20mA100nA (ICBO)40 @ 30mA, 10V
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-65°C ~ 150°C (TJ)SMD Поверхностный монтажDieDie
Central Semiconductor Corp TRANSISTOR NPN 160V 600MA CHIP 1400 в производствеNPN600mA160V200mV @ 5mA, 50mA50nA (ICBO)80 @ 10mA, 5V
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300MHz-65°C ~ 150°C (TJ)SMD Поверхностный монтажDieDie
Central Semiconductor Corp TRANSISTOR NPN SW 40V .2A CHIP 1400 в производствеNPN200mA15V500mV @ 10mA, 100mA400nA (ICBO)40 @ 10mA, 1V
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500MHz-65°C ~ 200°C (TJ)SMD Поверхностный монтажDieDie
Central Semiconductor Corp TRANSISTOR PNP DARL 100V CHIP 1200 в производствеPNP - Darlington8A80V3V @ 80mA, 8A500µA750 @ 4A, 3V
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4MHz-65°C ~ 200°C (TJ)SMD Поверхностный монтажDieDie
Central Semiconductor Corp TRANSISTOR PNP AMP SWITCH CHIP 1400 в производствеPNP600mA60V1.6V @ 50mA, 500mA10nA (ICBO)100 @ 150mA, 10V
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200MHz-65°C ~ 150°C (TJ)SMD Поверхностный монтажDieDie
Central Semiconductor Corp TRANSISTOR PNP HV CHIP FORM 1400 в производствеPNP500mA300V500mV @ 2mA, 20mA250nA (ICBO)25 @ 30mA, 10V
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50MHz-65°C ~ 150°C (TJ)SMD Поверхностный монтажDieDie
Central Semiconductor Corp TRANSISTOR PNP 150V 600MA CHIP 1400 в производствеPNP600mA150V500mV @ 5mA, 50mA50nA (ICBO)60 @ 10mA, 5V
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300MHz-65°C ~ 150°C (TJ)SMD Поверхностный монтажDieDie
Central Semiconductor Corp TRANSISTOR PNP LNA CHIP FORM 1400 в производствеPNP50mA50V300mV @ 1mA, 10mA50nA (ICBO)250 @ 100µA, 5V
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40MHz-65°C ~ 150°C (TJ)SMD Поверхностный монтажDieDie
Central Semiconductor Corp TRANSISTOR NPN 60V 0.05A SOT23 в производствеNPN50mA60V350mV @ 100µA, 1mA10nA (ICBO)250 @ 1mA, 5V350mW
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-65°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
Central Semiconductor Corp TRANSISTOR PNP 60V 0.6A SOT-23 в производствеPNP600mA60V1.6V @ 50mA, 500mA10nA (ICBO)100 @ 150mA, 10V350mW200MHz-65°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
Central Semiconductor Corp TRANSISTOR NPN 80V 0.5A SOT23 в производствеNPN500mA80V500mV @ 50mA, 500mA10nA (ICBO)100 @ 150mA, 10V350mW400MHz-65°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
Central Semiconductor Corp TRANSISTOR NPN 40V 0.6A SOT323 в производствеNPN600mA40V1V @ 50mA, 500mA10nA (ICBO)100 @ 150mA, 10V275mW300MHz-65°C ~ 150°C (TJ)SMD Поверхностный монтажSC-70, SOT-323SOT-323
Central Semiconductor Corp TRANSISTOR PNP 60V 0.6A SOT323 в производствеPNP600mA60V1.6V @ 50mA, 500mA10nA (ICBO)100 @ 150mA, 10V275mW200MHz-65°C ~ 150°C (TJ)SMD Поверхностный монтажSC-70, SOT-323SOT-323
Central Semiconductor Corp TRANSISTOR NPN 40V 0.2A SOT-323 в производствеNPN200mA40V300mV @ 5mA, 50mA
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100 @ 10mA, 1V275mW300MHz-65°C ~ 150°C (TJ)SMD Поверхностный монтажSC-70, SOT-323SOT-323
Central Semiconductor Corp TRANSISTOR PNP 50V 0.05A SOT323 в производствеPNP50mA50V300mV @ 1mA, 10mA10nA (ICBO)250 @ 100µA, 5V275mW40MHz-65°C ~ 150°C (TJ)SMD Поверхностный монтажSC-70, SOT-323SOT-323
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