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Производители для Транзисторы - биполярные (BJT) - одиночные

Bourns
Central Semiconductor
Comchip Technology
Diodes Incorporated
Infineon Technologies
MACOM Technology Solutions
Micro Commercial Components (MCC)
Microsemi
Nexperia
NXP Semiconductors
ON Semiconductor
Panasonic
Parallax, Inc.
Renesas Electronics America
ROHM Semiconductor
Sanken Electric Co., Ltd.
Sanyo Denki
STMicroelectronics
Taiwan Semiconductor
Texas Instruments
Toshiba Semiconductor and Storage
TT Electronics/Optek Technology
Vishay
WeEn Semiconductors Co., Ltd
номер части Производитель / Марка Краткое описание Статус деталиТип транзистораТок - коллектор (Ic) (макс.)Напряжение - Разрыв эмиттера коллектора (макс.)Vce Saturation (Макс.) @ Ib, IcТок - отсечка коллектора (макс.)Постоянный ток постоянного тока (hFE) (мин.) @ Ic, VceМощность - макс.Частота - переходРабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
TSC966CW RPG
 Taiwan Semiconductor Corporation TRANSISTOR NPN 400V 0.3A 100 в производствеNPN300mA400V500mV @ 5mA, 50mA1µA100 @ 1mA, 5V
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150°C (TJ)SMD Поверхностный монтажTO-261-4, TO-261AASOT-223
TS13005CK C0G
 Taiwan Semiconductor Corporation TRANSISTOR NPN 400V 3A 5A/A в производствеNPN3A400V1V @ 200mA, 1A10µA24 @ 425mA, 2V
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150°C (TJ)Through HoleTO-225AA, TO-126-3TO-126
MMBT2222A RFG
 Taiwan Semiconductor Corporation TRANSISTOR NPN 40V 0.6A 50A/ в производствеNPN600mA40V1V @ 50mA, 500mA10nA (ICBO)100 @ 150mA, 10V300mW300MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
BC846B RFG
 Taiwan Semiconductor Corporation TRANSISTOR NPN 65V 0.1A 200A в производствеNPN100mA65V500mV @ 5mA, 100mA100nA (ICBO)200 @ 2mA, 5V200mW100MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
MMBT3904L RFG
 Taiwan Semiconductor Corporation TRANSISTOR NPN 40V 0.2A 100A в производствеNPN200mA40V300mV @ 5mA, 50mA50nA100 @ 10mA, 1V300mW250MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
MMBT3906 RFG
 Taiwan Semiconductor Corporation TRANSISTOR PNP -40V -0.2A 10 в производствеPNP200mA40V400mV @ 5mA, 50mA100nA (ICBO)100 @ 10mA, 1V350mW250MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
MMBT3904 RFG
 Taiwan Semiconductor Corporation TRANSISTOR NPN 40V 0.2A 100A в производствеNPN200mA40V300mV @ 5mA, 50mA50nA100 @ 10mA, 1V300mW250MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
BC847B RFG
 Taiwan Semiconductor Corporation TRANSISTOR NPN 45V 0.1A 200A в производствеNPN100mA45V500mV @ 5mA, 100mA100nA (ICBO)200 @ 2mA, 5V200mW100MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
TSC873CW RPG
 Taiwan Semiconductor Corporation TRANSISTOR NPN 400V 0.3A 80A в производствеNPN300mA400V1V @ 250mA, 1A1mA80 @ 250mA, 10V
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150°C (TJ)SMD Поверхностный монтажTO-261-4, TO-261AASOT-223
MMBT3906L RFG
 Taiwan Semiconductor Corporation TRANSISTOR PNP -40V -0.2A 10 в производствеPNP200mA40V400mV @ 5mA, 50mA100nA (ICBO)100 @ 10mA, 1V350mW250MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
BC547A B1G
 Taiwan Semiconductor Corporation TRANSISTOR NPN 45V 0.1A 110A в производствеNPN100mA45V
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15nA (ICBO)110 @ 2mA, 5V500mW
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-65°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92
BC547B B1G
 Taiwan Semiconductor Corporation TRANSISTOR NPN 45V 0.1A 200A в производствеNPN100mA45V
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15nA (ICBO)200 @ 2mA, 5V500mW
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-65°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92
BC846A RFG
 Taiwan Semiconductor Corporation TRANSISTOR NPN 65V 0.1A 110A в производствеNPN100mA65V500mV @ 5mA, 100mA100nA (ICBO)110 @ 2mA, 5V200mW100MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
BC847A RFG
 Taiwan Semiconductor Corporation TRANSISTOR NPN 45V 0.1A 110A в производствеNPN100mA45V500mV @ 5mA, 100mA100nA (ICBO)110 @ 2mA, 5V200mW100MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
BC847C RFG
 Taiwan Semiconductor Corporation TRANSISTOR NPN 45V 0.1A 420A в производствеNPN100mA45V500mV @ 5mA, 100mA100nA (ICBO)420 @ 2mA, 5V200mW100MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
BC848A RFG
 Taiwan Semiconductor Corporation TRANSISTOR NPN 30V 0.1A 110A в производствеNPN100mA30V500mV @ 5mA, 100mA100nA (ICBO)110 @ 2mA, 5V200mW100MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
BC848B RFG
 Taiwan Semiconductor Corporation TRANSISTOR NPN 30V 0.1A 200A в производствеNPN100mA30V500mV @ 5mA, 100mA100nA (ICBO)200 @ 2mA, 5V200mW100MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
BC848C RFG
 Taiwan Semiconductor Corporation TRANSISTOR NPN 30V 0.1A 420A в производствеNPN100mA30V500mV @ 5mA, 100mA100nA (ICBO)420 @ 2mA, 5V200mW100MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
BC856A RFG
 Taiwan Semiconductor Corporation TRANSISTOR PNP -65V -0.1A 12 в производствеPNP100mA65V650mV @ 5mA, 100mA100nA (ICBO)125 @ 2mA, 5V200mW100MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
BC856B RFG
 Taiwan Semiconductor Corporation TRANSISTOR PNP -65V -0.1A 22 в производствеPNP100mA65V650mV @ 5mA, 100mA100nA (ICBO)220 @ 2mA, 5V200mW100MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
BC857A RFG
 Taiwan Semiconductor Corporation TRANSISTOR PNP -45V -0.1A 12 в производствеPNP100mA45V650mV @ 5mA, 100mA100nA (ICBO)125 @ 2mA, 5V200mW100MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
BC857B RFG
 Taiwan Semiconductor Corporation TRANSISTOR PNP -45V -0.1A 22 в производствеPNP100mA45V650mV @ 5mA, 100mA100nA (ICBO)220 @ 2mA, 5V200mW100MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
BC857C RFG
 Taiwan Semiconductor Corporation TRANSISTOR PNP -45V -0.1A 42 в производствеPNP100mA45V650mV @ 5mA, 100mA100nA (ICBO)420 @ 2mA, 5V200mW100MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
BC858A RFG
 Taiwan Semiconductor Corporation TRANSISTOR PNP -30V -0.1A 12 в производствеPNP100mA30V650mV @ 5mA, 100mA100nA (ICBO)125 @ 2mA, 5V200mW100MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
BC858B RFG
 Taiwan Semiconductor Corporation TRANSISTOR PNP -30V -0.1A 22 в производствеPNP100mA30V650mV @ 5mA, 100mA100nA (ICBO)220 @ 2mA, 5V200mW100MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
BC858C RFG
 Taiwan Semiconductor Corporation TRANSISTOR PNP -30V -0.1A 42 в производствеPNP100mA30V650mV @ 5mA, 100mA100nA (ICBO)420 @ 2mA, 5V200mW100MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
MMBT2907A RFG
 Taiwan Semiconductor Corporation TRANSISTOR PNP -60V -0.6A 50 в производствеPNP600mA60V1.6V @ 50mA, 500mA50nA100 @ 150mA, 10V350mW200MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
BC807-16 RFG
 Taiwan Semiconductor Corporation TRANSISTOR PNP -45V -0.5A 10 в производствеPNP500mA45V700mV @ 50mA, 500mA200nA (ICBO)100 @ 100mA, 1V300mW100MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
BC807-25 RFG
 Taiwan Semiconductor Corporation TRANSISTOR PNP -45V -0.5A 16 в производствеPNP500mA45V700mV @ 50mA, 500mA200nA (ICBO)160 @ 100mA, 1V300mW100MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
BC807-40 RFG
 Taiwan Semiconductor Corporation TRANSISTOR PNP -45V -0.5A 25 в производствеPNP500mA45V700mV @ 50mA, 500mA200nA (ICBO)250 @ 100mA, 1V300mW100MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
BC817-16 RFG
 Taiwan Semiconductor Corporation TRANSISTOR NPN 45V 0.5A 100A в производствеNPN500mA45V700mV @ 50mA, 500mA100nA (ICBO)100 @ 100mA, 1V300mW100MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
BC817-25 RFG
 Taiwan Semiconductor Corporation TRANSISTOR NPN 45V 0.5A 160A в производствеNPN500mA45V700mV @ 50mA, 500mA100nA (ICBO)160 @ 100mA, 1V300mW100MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
BC817-40 RFG
 Taiwan Semiconductor Corporation TRANSISTOR NPN 45V 0.5A 250A в производствеNPN500mA45V700mV @ 50mA, 500mA100nA (ICBO)250 @ 100mA, 1V300mW100MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23
BC546A A1G
 Taiwan Semiconductor Corporation TRANSISTOR NPN 65V 0.1A 110A в производствеNPN100mA65V
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15nA (ICBO)110 @ 2mA, 5V500mW
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-65°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92
BC546B A1G
 Taiwan Semiconductor Corporation TRANSISTOR NPN 65V 0.1A 200A в производствеNPN100mA65V
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15nA (ICBO)200 @ 2mA, 5V500mW
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-65°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92
BC546C A1G
 Taiwan Semiconductor Corporation TRANSISTOR NPN 65V 0.1A 420A в производствеNPN100mA65V
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15nA (ICBO)420 @ 2mA, 5V500mW
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-65°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92
BC547A A1G
 Taiwan Semiconductor Corporation TRANSISTOR NPN 45V 0.1A 110A в производствеNPN100mA45V
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15nA (ICBO)110 @ 2mA, 5V500mW
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-65°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92
BC547B A1G
 Taiwan Semiconductor Corporation TRANSISTOR NPN 45V 0.1A 200A в производствеNPN100mA45V
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15nA (ICBO)200 @ 2mA, 5V500mW
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-65°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92
BC547C A1G
 Taiwan Semiconductor Corporation TRANSISTOR NPN 45V 0.1A 420A в производствеNPN100mA45V
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15nA (ICBO)420 @ 2mA, 5V500mW
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-65°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92
BC548A A1G
 Taiwan Semiconductor Corporation TRANSISTOR NPN 30V 0.1A 110A в производствеNPN100mA30V
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15nA (ICBO)110 @ 2mA, 5V500mW
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-65°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92
BC548B A1G
 Taiwan Semiconductor Corporation TRANSISTOR NPN 30V 0.1A 200A в производствеNPN100mA30V
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15nA (ICBO)200 @ 2mA, 5V500mW
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-65°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92
BC548C A1G
 Taiwan Semiconductor Corporation TRANSISTOR NPN 30V 0.1A 420A в производствеNPN100mA30V
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15nA (ICBO)420 @ 2mA, 5V500mW
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-65°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92
BC549A A1G
 Taiwan Semiconductor Corporation TRANSISTOR NPN 30V 0.1A 110A в производствеNPN100mA30V
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15nA (ICBO)110 @ 2mA, 5V500mW
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-65°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92
BC549B A1G
 Taiwan Semiconductor Corporation TRANSISTOR NPN 30V 0.1A 200A в производствеNPN100mA30V
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15nA (ICBO)200 @ 2mA, 5V500mW
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-65°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92
BC549C A1G
 Taiwan Semiconductor Corporation TRANSISTOR NPN 30V 0.1A 420A в производствеNPN100mA30V
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15nA (ICBO)420 @ 2mA, 5V500mW
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-65°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92
BC550A A1G
 Taiwan Semiconductor Corporation TRANSISTOR NPN 45V 0.1A 110A в производствеNPN100mA45V
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15nA (ICBO)110 @ 2mA, 5V500mW
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-65°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92
BC550B A1G
 Taiwan Semiconductor Corporation TRANSISTOR NPN 45V 0.1A 200A в производствеNPN100mA45V
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15nA (ICBO)200 @ 2mA, 5V500mW
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-65°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92
BC550C A1G
 Taiwan Semiconductor Corporation TRANSISTOR NPN 45V 0.1A 420A в производствеNPN100mA45V
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15nA (ICBO)420 @ 2mA, 5V500mW
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-65°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92
BC337-16 A1G
 Taiwan Semiconductor Corporation TRANSISTOR NPN 45V 0.8A 100A в производствеNPN800mA45V700mV @ 50mA, 500mA100nA (ICBO)100 @ 100mA, 5V625mW100MHz-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92
BC337-25 A1G
 Taiwan Semiconductor Corporation TRANSISTOR NPN 45V 0.8A 160A в производствеNPN800mA45V700mV @ 50mA, 500mA100nA (ICBO)160 @ 100mA, 5V625mW100MHz-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92
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