номер части Производитель / Марка Краткое описание Статус деталиТип транзистораТок - коллектор (Ic) (макс.)Напряжение - Разрыв эмиттера коллектора (макс.)Vce Saturation (Макс.) @ Ib, IcТок - отсечка коллектора (макс.)Постоянный ток постоянного тока (hFE) (мин.) @ Ic, VceМощность - макс.Частота - переходРабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
Microsemi Corporation TRANSISTOR PNP 60V 0.6A в производствеPNP600mA60V1.6V @ 50mA, 500mA50nA100 @ 150mA, 10V500mW
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-65°C ~ 200°C (TJ)SMD Поверхностный монтаж3-SMD, No LeadUB
Microsemi Corporation TRANSISTOR NPN 50V 0.8A 3PIN SMD в производствеNPN800mA50V1V @ 50mA, 500mA50nA100 @ 150mA, 10V500mW
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-65°C ~ 200°C (TJ)SMD Поверхностный монтаж3-SMD, No Lead3-SMD
Microsemi Corporation TRANSISTOR NPN 80V 1A UB в производствеNPN1A80V500mV @ 50mA, 500mA10µA (ICBO)50 @ 500mA, 10V500mW
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-65°C ~ 200°C (TJ)SMD Поверхностный монтаж3-SMD, No LeadUB
Microsemi Corporation TRANSISTOR NPN 80V 1A TO-5 в производствеNPN1A80V500mV @ 50mA, 500mA10µA (ICBO)50 @ 500mA, 10V800mW
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-65°C ~ 200°C (TJ)Through HoleTO-205AA, TO-5-3 Metal CanTO-5
Microsemi Corporation TRANSISTOR NPN 80V 0.5A TO-18 в производствеNPN500mA80V5V @ 15mA, 150mA10µA (ICBO)40 @ 150mA, 10V500mW
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-65°C ~ 200°C (TJ)Through HoleTO-206AA, TO-18-3 Metal CanTO-18 (TO-206AA)
Microsemi Corporation TRANSISTOR NPN 150V 0.3A TO-39 в производствеNPN300mA150V400mV @ 15mA, 150mA10µA (ICBO)40 @ 150mA, 10V1W
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-65°C ~ 200°C (TJ)Through HoleTO-205AD, TO-39-3 Metal CanTO-39 (TO-205AD)
Microsemi Corporation TRANSISTOR NPN 150V 0.3A TO-39 в производствеNPN300mA150V400mV @ 15mA, 150mA10µA (ICBO)100 @ 150mA, 10V1W
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-65°C ~ 200°C (TJ)Through HoleTO-205AD, TO-39-3 Metal CanTO-39 (TO-205AD)
Microsemi Corporation TRANSISTOR NPN 50V 0.8A TO18 в производствеNPN800mA50V1V @ 50mA, 500mA50nA100 @ 150mA, 10V500mW
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-65°C ~ 200°C (TJ)Through HoleTO-206AA, TO-18-3 Metal CanTO-218
Microsemi Corporation TRANSISTOR NPN 150V 0.3A в производствеNPN300mA150V400mV @ 15mA, 150mA10µA (ICBO)100 @ 150mA, 10V1W
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-65°C ~ 200°C (TJ)Through HoleTO-205AD, TO-39-3 Metal CanTO-39 (TO-205AD)
Microsemi Corporation TRANSISTOR NPN 150V 0.3A в производствеNPN300mA150V400mV @ 15mA, 150mA10µA (ICBO)100 @ 150mA, 10V1W
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-65°C ~ 200°C (TJ)Through HoleTO-205AD, TO-39-3 Metal CanTO-39
Microsemi Corporation TRANSISTOR PNP 200V 1A TO-5 в производствеPNP1A200V2V @ 5mA, 50mA1mA30 @ 50mA, 10V750mW
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-65°C ~ 200°C (TJ)Through HoleTO-205AA, TO-5-3 Metal CanTO-5
Microsemi Corporation TRANSISTOR NPN 60V 0.05A TO-18 в производствеNPN50mA60V300mV @ 100µA, 1mA2nA225 @ 10mA, 5V360mW
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-65°C ~ 200°C (TJ)Through HoleTO-206AA, TO-18-3 Metal CanTO-18
Microsemi Corporation TRANSISTOR NPN 100V 0.5A TO-39 в производствеNPN500mA100V600mV @ 30mA, 300mA10µA (ICBO)40 @ 150mA, 10V1W
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-65°C ~ 200°C (TJ)Through HoleTO-205AD, TO-39-3 Metal CanTO-39 (TO-205AD)
Microsemi Corporation TRANSISTOR NPN 80V 3A TO-5 в производствеNPN3A80V500mV @ 200mA, 2A5µA40 @ 1A, 2V1W
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-65°C ~ 200°C (TJ)Through HoleTO-205AA, TO-5-3 Metal CanTO-5
Microsemi Corporation TRANSISTOR NPN 80V 0.5A TO-5 в производствеNPN500mA80V5V @ 15mA, 150mA10µA (ICBO)40 @ 150mA, 10V800mW
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-65°C ~ 200°C (TJ)Through HoleTO-205AA, TO-5-3 Metal CanTO-5
Microsemi Corporation TRANSISTOR PNP DARL 80V 8A TO-66 в производствеPNP - Darlington8A80V2V @ 16mA, 4A500µA750 @ 4A, 3V64W
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-65°C ~ 175°C (TJ)Through HoleTO-213AA, TO-66-2
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Microsemi Corporation TRANSISTOR NPN 120V 1A TO-39 в производствеNPN1A120V1V @ 50mA, 500mA10µA40 @ 250mA, 2V1W
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-65°C ~ 200°C (TJ)Through HoleTO-205AD, TO-39-3 Metal CanTO-39
Microsemi Corporation TRANSISTOR NPN 50V 0.8A TO-18 в производствеNPN800mA50V1V @ 50mA, 500mA50nA100 @ 150mA, 10V500mW
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-65°C ~ 200°C (TJ)Through HoleTO-206AA, TO-18-3 Metal CanTO-18 (TO-206AA)
Microsemi Corporation TRANSISTOR NPN 80V 1A TO-18 в производствеNPN1A80V500mV @ 50mA, 500mA10nA50 @ 500mA, 10V500mW
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-65°C ~ 200°C (TJ)Through HoleTO-206AA, TO-18-3 Metal CanTO-18 (TO-206AA)
Microsemi Corporation TRANSISTOR NPN DARL 80V 12A TO-3 в производствеNPN - Darlington12A80V3V @ 120mA, 12A1mA1000 @ 6A, 3V150W
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-55°C ~ 175°C (TJ)Through HoleTO-204AA, TO-3TO-3
Microsemi Corporation TRANSISTOR PNP 175V 1A TO-39 в производствеPNP1A175V600mV @ 5mA, 50mA10µA100 @ 50mA, 10V1W
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-65°C ~ 200°C (TJ)Through HoleTO-205AD, TO-39-3 Metal CanTO-39
Microsemi Corporation TRANSISTOR NPN 80V 1A TO-5 в производствеNPN1A80V500mV @ 50mA, 500mA10µA (ICBO)50 @ 500mA, 10V800mW
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-65°C ~ 200°C (TJ)Through HoleTO-205AA, TO-5-3 Metal CanTO-5
Microsemi Corporation TRANSISTOR PNP 20V 0.1A TO-46 в производствеPNP100mA20V
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10µA (ICBO)70 @ 1mA, 500mV400mW
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-65°C ~ 200°C (TJ)Through HoleTO-206AB, TO-46-3 Metal CanTO-46-3
Microsemi Corporation TRANSISTOR NPN 350V 10A TO-3 в производствеNPN10A350V1.5V @ 1.67A, 10A1mA6 @ 10A, 3V5.5W
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-65°C ~ 200°C (TJ)Through HoleTO-204AA, TO-3TO-3
Microsemi Corporation TRANSISTOR NPN 300V 1A TO-66 Discontinued at -NPN1A300V2.5V @ 25mA, 250mA100µA (ICBO)25 @ 250mA, 10V20W
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-55°C ~ 200°C (TJ)
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Microsemi Corporation TRANSISTOR PNP 40V 1A TO-39 Discontinued at -PNP1A40V1.2V @ 100mA, 1A100nA (ICBO)40 @ 500mA, 1V1W
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-55°C ~ 175°C (TJ)Through HoleTO-205AD, TO-39-3 Metal CanTO-39
Microsemi Corporation TRANSISTOR NPN 45V 0.03A в производствеNPN30mA45V1V @ 500µA, 10mA2nA100 @ 10µA, 5V300mW
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-55°C ~ 200°C (TJ)Through HoleTO-206AA, TO-18-3 Metal CanTO-18 (TO-206AA)
Microsemi Corporation TRANSISTOR NPN 80V 1A в производствеNPN1A80V500mV @ 50mA, 500mA10nA50 @ 500mA, 10V800mW
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-65°C ~ 200°C (TJ)Through HoleTO-205AD, TO-39-3 Metal CanTO-39
Microsemi Corporation TRANSISTOR NPN 50V 0.8A TO46 в производствеNPN800mA50V1V @ 50mA, 500mA10nA100 @ 150mA, 10V800mW
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-55°C ~ 200°C (TJ)Through HoleTO-205AD, TO-39-3 Metal CanTO-39
Microsemi Corporation TRANSISTOR PNP 300V 1A TO-39 в производствеPNP1A300V2V @ 5mA, 50mA1mA30 @ 50mA, 10V750mW
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-65°C ~ 200°C (TJ)Through HoleTO-205AD, TO-39-3 Metal CanTO-39
Microsemi Corporation TRANSISTOR PNP 60V 0.6A в производствеPNP600mA60V1.6V @ 50mA, 500mA50nA40 @ 150mA, 10V500mW
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-65°C ~ 200°C (TJ)Through HoleTO-206AA, TO-18-3 Metal CanTO-18 (TO-206AA)
Microsemi Corporation TRANSISTOR NPN 80V 1A в производствеNPN1A80V500mV @ 50mA, 500mA10µA (ICBO)50 @ 500mA, 10V500mW
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-65°C ~ 200°C (TJ)SMD Поверхностный монтаж3-SMD, No LeadUB
Microsemi Corporation TRANSISTOR PNP 175V 1A TO-39 в производствеPNP1A175V600mV @ 5mA, 50mA10µA100 @ 50mA, 10V1W
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-65°C ~ 200°C (TJ)Through HoleTO-205AA, TO-5-3 Metal CanTO-5
Microsemi Corporation TRANSISTOR NPN 150V 0.3A TO-39 в производствеNPN300mA150V400mV @ 15mA, 150mA10µA (ICBO)40 @ 150mA, 10V1W
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-65°C ~ 200°C (TJ)Through HoleTO-205AD, TO-39-3 Metal CanTO-39 (TO-205AD)
Microsemi Corporation TRANSISTOR NPN 80V 1A TO39 в производствеNPN1A80V500mV @ 50mA, 500mA10µA (ICBO)50 @ 500mA, 10V800mW
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-65°C ~ 200°C (TJ)Through HoleTO-205AD, TO-39-3 Metal CanTO-39
Microsemi Corporation TRANSISTOR PNP 35V 0.1A TO46 Discontinued at -PNP100mA35V
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10µA (ICBO)50 @ 1mA, 500mV400mW
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-65°C ~ 200°C (TJ)Through HoleTO-206AB, TO-46-3 Metal CanTO-46 (TO-206AB)
Microsemi Corporation TRANSISTOR NPN 50V 0.8A в производствеNPN800mA50V1V @ 50mA, 500mA50nA100 @ 150mA, 10V500mW
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-65°C ~ 200°C (TJ)SMD Поверхностный монтаж4-SMD, No Lead4-SMD
Microsemi Corporation TRANSISTOR PNP 60V 0.6A TO18 в производствеPNP600mA60V1.6V @ 50mA, 500mA50nA100 @ 150mA, 10V500mW
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-65°C ~ 200°C (TJ)Through HoleTO-206AA, TO-18-3 Metal CanTO-206AA (TO-18)
Microsemi Corporation TRANSISTOR NPN 70V 15A TO-3 устарелыйNPN15A70V2V @ 3.3A, 10A1mA20 @ 4A, 4V6W
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-65°C ~ 200°C (TJ)Through HoleTO-204AA, TO-3TO-3 (TO-204AA)
Microsemi Corporation TRANSISTOR PNP DARL 100V 12A TO-3 в производствеPNP - Darlington12A100V3V @ 120mA, 12A1mA1000 @ 6A, 3V150W
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-55°C ~ 175°C (TJ)Through HoleTO-204AA, TO-3TO-204AA (TO-3)
Microsemi Corporation TRANSISTOR NPN 300V 2A TO-5 в производствеNPN2A300V800mV @ 400mA, 2A200nA25 @ 500mA, 5V1W
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-65°C ~ 200°C (TJ)Through HoleTO-205AA, TO-5-3 Metal CanTO-5
Microsemi Corporation TRANSISTOR NPN 30V 0.5A TO-39 Discontinued at -NPN500mA30V1.5V @ 15mA, 150mA10µA (ICBO)40 @ 150mA, 10V800mW
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-65°C ~ 200°C (TJ)Through HoleTO-205AD, TO-39-3 Metal CanTO-39
Microsemi Corporation TRANSISTOR NPN TO-39 в производстве
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Through HoleTO-205AD, TO-39-3 Metal CanTO-39
Microsemi Corporation TRANSISTOR NPN DARL 150V 5A TO-33 Discontinued at -NPN - Darlington5A150V2.5V @ 10mA, 5A
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1000 @ 5A, 5V1W
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-65°C ~ 200°C (TJ)Through HoleTO-205AC, TO-33-4 Metal CanTO-33
Microsemi Corporation TRANSISTOR NPN 30V 0.5A TO-39 Discontinued at -NPN500mA30V1.5V @ 15mA, 150mA10nA (ICBO)100 @ 150mA, 10V800mW
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-65°C ~ 200°C (TJ)Through HoleTO-205AD, TO-39-3 Metal CanTO-39
Microsemi Corporation TRANSISTOR PNP TO-39 Discontinued at -
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Microsemi Corporation TRANSISTOR NPN 40V 3A TO-8 в производствеNPN3A40V750mV @ 40mA, 750mA15µA (ICBO)35 @ 750mA, 4V1.75W
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-65°C ~ 200°C (TJ)Through HoleTO-233AA, TO-8-3 Metal CanTO-8
Microsemi Corporation TRANSISTOR NPN 30V 0.5A TO-5 в производствеNPN500mA30V1.5V @ 15mA, 150mA10µA (ICBO)40 @ 150mA, 10V800mW
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-65°C ~ 200°C (TJ)Through HoleTO-205AD, TO-39-3 Metal CanTO-39
Microsemi Corporation TRANSISTOR NPN 60V 20A TO-3 в производствеNPN20A60V4V @ 4A, 20A5mA15 @ 10A, 4V6W
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-65°C ~ 200°C (TJ)Through HoleTO-204AA, TO-3TO-3
Microsemi Corporation TRANSISTOR PNP DARL 80V 10A TO-3 Discontinued at -PNP - Darlington10A80V3V @ 100µA, 10A1mA1000 @ 5A, 3V5W
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-65°C ~ 175°C (TJ)Through HoleTO-204AA, TO-3TO-204AA (TO-3)
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