Microsemi агент по продажам - Транзисторы - биполярные (BJT) - одиночные - JANTX2N5581 HS2222A - ICCHIP

номер части	Производитель / Марка	Краткое описание	Статус детали	Тип транзистора	Ток - коллектор (Ic) (макс.)	Напряжение - Разрыв эмиттера коллектора (макс.)	Vce Saturation (Макс.) @ Ib, Ic	Ток - отсечка коллектора (макс.)	Постоянный ток постоянного тока (hFE) (мин.) @ Ic, Vce	Мощность - макс.	Частота - переход	Рабочая Температура	Тип монтажа	Упаковка / чехол	Пакет устройств поставщика
JANTX2N5581	Microsemi Corporation	TRANSISTOR NPN 50V 0.8A TO46	в производстве	NPN	800mA	50V	1V @ 50mA, 500mA	10µA (ICBO)	40 @ 150mA, 10V	500mW	-	-55°C ~ 200°C (TJ)	Through Hole	TO-206AB, TO-46-3 Metal Can	TO-46 (TO-206AB)
HS2222A	Microsemi Corporation	NPN TRANSISTOR	в производстве	-	-	-	-	-	-	-	-	-	-	-	-
JAN2N2221AUB	Microsemi Corporation	TRANSISTOR NPN 50V 0.8A	в производстве	NPN	800mA	50V	1V @ 50mA, 500mA	50nA	40 @ 150mA, 10V	500mW	-	-65°C ~ 200°C (TJ)	SMD Поверхностный монтаж	3-SMD, No Lead	UB
JAN2N2369A	Microsemi Corporation	TRANSISTOR NPN 15V TO18	в производстве	NPN	-	15V	450mV @ 10mA, 100mA	400nA	20 @ 100mA, 1V	360mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
JANTXV2N2907AL	Microsemi Corporation	TRANSISTOR PNP 60V 0.6A TO18	в производстве	PNP	600mA	60V	1.6V @ 50mA, 500mA	50nA	100 @ 150mA, 10V	500mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
JAN2N3501L	Microsemi Corporation	TRANSISTOR NPN 150V 0.3A	в производстве	NPN	300mA	150V	400mV @ 15mA, 150mA	10µA (ICBO)	100 @ 150mA, 10V	1W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
JAN2N930	Microsemi Corporation	TRANSISTOR NPN 45V 0.03A TO18	в производстве	NPN	30mA	45V	1V @ 500µA, 10mA	2nA	100 @ 10µA, 5V	300mW	-	-55°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
2N2218AL	Microsemi Corporation	TRANSISTOR NPN 50V 0.8A TO5	в производстве	NPN	800mA	50V	1V @ 50mA, 500mA	10nA	40 @ 150mA, 10V	800mW	-	-55°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
2N3486	Microsemi Corporation	TRANSISTOR PNP 60V 0.6A	в производстве	-	-	-	-	-	-	-	-	-	Through Hole	TO-206AB, TO-46-3 Metal Can	TO-46
2N2221AL	Microsemi Corporation	TRANSISTOR NPN 50V 0.8A TO18	в производстве	NPN	800mA	50V	1V @ 50mA, 500mA	50nA	40 @ 150mA, 10V	500mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
JAN2N4150S	Microsemi Corporation	TRANSISTOR NPN 70V 10A TO-39	в производстве	NPN	10A	70V	2.5V @ 1A, 10A	10µA	40 @ 5A, 5V	1W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
JAN2N4029	Microsemi Corporation	TRANSISTOR PNP 80V 1A	в производстве	PNP	1A	80V	1V @ 100mA, 1A	10µA (ICBO)	100 @ 100mA, 5V	500mW	-	-55°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
JANTX2N3501L	Microsemi Corporation	TRANSISTOR NPN 150V 0.3A	в производстве	NPN	300mA	150V	400mV @ 15mA, 150mA	10µA (ICBO)	100 @ 150mA, 10V	1W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-5	TO-5
2N3468	Microsemi Corporation	NPN POWER SILICON TRANSISTORS	в производстве	-	-	-	-	-	-	-	-	-	-	-	-
2N5011	Microsemi Corporation	NPN SILICON TRANSISTOR	в производстве	-	-	-	-	-	-	-	-	-	-	-	-
2N4864	Microsemi Corporation	NPN SILICON TRANSISTOR	в производстве	-	-	-	-	-	-	-	-	-	-	-	-
2N4865	Microsemi Corporation	NPN SILICON TRANSISTOR	в производстве	-	-	-	-	-	-	-	-	-	-	-	-
JANTXV2N2222AUB	Microsemi Corporation	TRANSISTOR NPN 50V 0.8A	в производстве	NPN	800mA	50V	1V @ 50mA, 500mA	50nA	100 @ 150mA, 10V	500mW	-	-65°C ~ 200°C (TJ)	SMD Поверхностный монтаж	3-SMD, No Lead	UB
JANTXV2N2907AUB	Microsemi Corporation	TRANSISTOR PNP 60V 0.6A 4UB	в производстве	PNP	600mA	60V	1.6V @ 50mA, 500mA	50nA	100 @ 150mA, 10V	500mW	-	-65°C ~ 200°C (TJ)	SMD Поверхностный монтаж	4-SMD, No Lead	UB
JAN2N2906AUB	Microsemi Corporation	TRANSISTOR PNP 60V 0.6A 3UB	в производстве	PNP	600mA	60V	1.6V @ 50mA, 500mA	50nA	40 @ 150mA, 10V	500mW	-	-65°C ~ 200°C (TJ)	SMD Поверхностный монтаж	4-SMD, No Lead	UB
2N3440L	Microsemi Corporation	TRANSISTOR NPN 250V 1A TO-5	в производстве	NPN	1A	250V	500mV @ 4mA, 50mA	2µA	40 @ 20mA, 10V	800mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
JAN2N3485A	Microsemi Corporation	TRANSISTOR PNP 60V 0.6A	в производстве	PNP	600mA	60V	1.6V @ 50mA, 500mA	10µA (ICBO)	40 @ 150mA, 10V	400mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AB, TO-46-3 Metal Can	TO-46 (TO-206AB)
2N4300	Microsemi Corporation	PNP TRANSISTOR	в производстве	-	-	-	-	-	-	-	-	-	-	-	-
2N3867S	Microsemi Corporation	PNP TRANSISTOR	в производстве	-	-	-	-	-	-	-	-	-	-	-	-
2N3868S	Microsemi Corporation	PNP TRANSISTOR	в производстве	-	-	-	-	-	-	-	-	-	-	-	-
JAN2N3735	Microsemi Corporation	TRANSISTOR NPN 40V 1.5A TO39	в производстве	NPN	1.5A	40V	900mV @ 100mA, 1A	10µA (ICBO)	20 @ 1A, 1.5V	1W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
JAN2N2218AL	Microsemi Corporation	TRANSISTOR NPN 50V 0.8A TO5	в производстве	NPN	800mA	50V	1V @ 50mA, 500mA	10nA	40 @ 150mA, 10V	800mW	-	-55°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
2N3634	Microsemi Corporation	NPN POWER SILICON TRANSISTORS	в производстве	-	-	-	-	-	-	-	-	-	-	-	-
JAN2N2219A	Microsemi Corporation	TRANSISTOR NPN 50V 0.8A	в производстве	NPN	800mA	50V	1V @ 50mA, 500mA	10nA	100 @ 150mA, 10V	800mW	-	-55°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
JAN2N2221A	Microsemi Corporation	TRANSISTOR NPN 50V 0.8A TO18	в производстве	NPN	800mA	50V	1V @ 50mA, 500mA	50nA	40 @ 150mA, 10V	500mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
JAN2N3735L	Microsemi Corporation	TRANSISTOR NPN 40V 1.5A TO5	в производстве	NPN	1.5A	40V	900mV @ 100mA, 1A	10µA (ICBO)	20 @ 1A, 1.5V	1W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
2N3867	Microsemi Corporation	PNP TRANSISTOR	в производстве	-	-	-	-	-	-	-	-	-	-	-	-
2N5415S	Microsemi Corporation	PNP TRANSISTORS	в производстве	-	-	-	-	-	-	-	-	-	-	-	-
JAN2N2219AL	Microsemi Corporation	TRANSISTOR NPN 50V 0.8A	в производстве	NPN	800mA	50V	1V @ 50mA, 500mA	10nA	100 @ 150mA, 10V	800mW	-	-55°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
JAN2N2221AL	Microsemi Corporation	TRANSISTOR NPN 50V 0.8A TO18	в производстве	NPN	800mA	50V	1V @ 50mA, 500mA	50nA	40 @ 150mA, 10V	500mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
JANTX2N2218A	Microsemi Corporation	TRANSISTOR NPN 50V 0.8A TO39	в производстве	NPN	800mA	50V	1V @ 50mA, 500mA	10nA	40 @ 150mA, 10V	800mW	-	-55°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
2N5092	Microsemi Corporation	NPN SILICON TRANSISTOR	в производстве	-	-	-	-	-	-	-	-	-	-	-	-
2N3467L	Microsemi Corporation	NPN POWER SILICON TRANSISTORS	в производстве	-	-	-	-	-	-	-	-	-	-	-	-
2N3468L	Microsemi Corporation	NPN POWER SILICON TRANSISTORS	в производстве	-	-	-	-	-	-	-	-	-	-	-	-
JANTX2N2218AL	Microsemi Corporation	TRANSISTOR NPN 50V 0.8A TO5	в производстве	NPN	800mA	50V	1V @ 50mA, 500mA	10nA	40 @ 150mA, 10V	800mW	-	-55°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
2N5415	Microsemi Corporation	PNP TRANSISTORS	в производстве	-	-	-	-	-	-	-	-	-	-	-	-
JANTXV2N2222AL	Microsemi Corporation	TRANSISTOR NPN 50V 0.8A	в производстве	NPN	800mA	50V	1V @ 50mA, 500mA	50nA	100 @ 150mA, 10V	500mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
JANTX2N3486A	Microsemi Corporation	TRANSISTOR PNP 60V 0.6A TO46	в производстве	PNP	600mA	60V	1.6V @ 50mA, 500mA	10µA (ICBO)	100 @ 150mA, 10V	400mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AB, TO-46-3 Metal Can	TO-46-3
JANTX2N2219A	Microsemi Corporation	TRANSISTOR NPN 50V 0.8A TO46	в производстве	NPN	800mA	50V	1V @ 50mA, 500mA	10nA	100 @ 150mA, 10V	800mW	-	-55°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
JANTX2N2221A	Microsemi Corporation	TRANSISTOR NPN 50V 0.8A TO18	в производстве	NPN	800mA	50V	1V @ 50mA, 500mA	50nA	40 @ 150mA, 10V	500mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
2N5151L	Microsemi Corporation	NPN SILICON TRANSISTOR	в производстве	-	-	-	-	-	-	-	-	-	-	-	-
JANTX2N4029	Microsemi Corporation	TRANSISTOR PNP 80V 1A TO18	в производстве	PNP	1A	80V	1V @ 100mA, 1A	10µA (ICBO)	100 @ 100mA, 5V	500mW	-	-55°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
JANTX2N2221AL	Microsemi Corporation	TRANSISTOR NPN 50V 0.8A TO18	в производстве	NPN	800mA	50V	1V @ 50mA, 500mA	50nA	40 @ 150mA, 10V	500mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
2N6191	Microsemi Corporation	PNP POWER TRANSISTOR SILICON AMP	в производстве	-	-	-	-	-	-	-	-	-	-	-	-
2N3506A	Microsemi Corporation	NPN POWER SILICON TRANSISTORS	в производстве	-	-	-	-	-	-	-	-	-	-	-	-

Производители для Транзисторы - биполярные (BJT) - одиночные