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Производители для Оптоизоляторы - транзистор, фотогальванический выход

Broadcom Limited
CEL (California Eastern Laboratories)
Everlight Electronics
Infineon Technologies
Isocom
IXYS Integrated Circuits Division
Lite-On, Inc.
Lumex, Inc.
ON Semiconductor
Panasonic
QT Brightek
Renesas Electronics America
Sharp Microelectronics
Skyworks Solutions, Inc.
Socle Technology Corporation
Standex-Meder Electronics
Taiwan Semiconductor
Toshiba Semiconductor and Storage
TT Electronics/Optek Technology
Vishay
Weidmüller
номер части Производитель / Марка Краткое описание Статус деталиКоличество каналовНапряжение - изоляцияКоэффициент передачи в реальном времени (мин.)Коэффициент передачи тока (макс.)Время включения / выключения (Тип)Время нарастания / падения (Тип)Тип вводаТип выходаНапряжение - выход (макс.)Текущий - выход / каналНапряжение - Вперед (Vf) (Тип)Current - DC Forward (If) (Max)Vce Saturation (Макс.)Рабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
4N28TM
 ON Semiconductor OPTOISO 4.17KV TRANSISTOR W/BASE 6DIP устарелый14170Vrms10% @ 10mA
-
2µs, 2µs
-
DCTransistor with Base30V
-
1.18V60mA500mV-40°C ~ 100°CThrough Hole6-DIP (0.400", 10.16mm)6-DIP
4N28VM
 ON Semiconductor OPTOISO 4.17KV TRANSISTOR W/BASE 6DIP устарелый14170Vrms10% @ 10mA
-
2µs, 2µs
-
DCTransistor with Base30V
-
1.18V60mA500mV-40°C ~ 100°CThrough Hole6-DIP (0.300", 7.62mm)6-DIP
4N28W
 ON Semiconductor OPTOISO 5.3KV TRANSISTOR W/BASE 6DIP устарелый15300Vrms10% @ 10mA
-
2µs, 2µs
-
DCTransistor with Base30V
-
1.18V100mA500mV-55°C ~ 100°CThrough Hole6-DIP (0.400", 10.16mm)6-DIP
4N29300
 ON Semiconductor OPTOISO 5.3KV DARL W/BASE 6DIP устарелый15300Vrms100% @ 10mA
-
5µs, 40µs (Max)
-
DCDarlington with Base30V150mA1.2V80mA1V-55°C ~ 100°CThrough Hole6-DIP (0.300", 7.62mm)6-DIP
4N29300W
 ON Semiconductor OPTOISO 5.3KV DARL W/BASE 6DIP устарелый15300Vrms100% @ 10mA
-
5µs, 40µs (Max)
-
DCDarlington with Base30V150mA1.2V80mA1V-55°C ~ 100°CThrough Hole6-DIP (0.400", 10.16mm)6-DIP
4N293S
 ON Semiconductor OPTOISO 5.3KV DARL W/BASE 6SMD устарелый15300Vrms100% @ 10mA
-
5µs, 40µs (Max)
-
DCDarlington with Base30V150mA1.2V80mA1V-55°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
4N293SD
 ON Semiconductor OPTOISO 5.3KV DARL W/BASE 6SMD устарелый15300Vrms100% @ 10mA
-
5µs, 40µs (Max)
-
DCDarlington with Base30V150mA1.2V80mA1V-55°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
4N29S
 ON Semiconductor OPTOISO 5.3KV DARL W/BASE 6SMD устарелый15300Vrms100% @ 10mA
-
5µs, 40µs (Max)
-
DCDarlington with Base30V150mA1.2V80mA1V-55°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
4N29SD
 ON Semiconductor OPTOISO 5.3KV DARL W/BASE 6SMD устарелый15300Vrms100% @ 10mA
-
5µs, 40µs (Max)
-
DCDarlington with Base30V150mA1.2V80mA1V-55°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
4N29W
 ON Semiconductor OPTOISO 5.3KV DARL W/BASE 6DIP устарелый15300Vrms100% @ 10mA
-
5µs, 40µs (Max)
-
DCDarlington with Base30V150mA1.2V80mA1V-55°C ~ 100°CThrough Hole6-DIP (0.400", 10.16mm)6-DIP
4N30300
 ON Semiconductor OPTOISO 5.3KV DARL W/BASE 6DIP устарелый15300Vrms100% @ 10mA
-
5µs, 40µs (Max)
-
DCDarlington with Base30V150mA1.2V80mA1V-55°C ~ 100°CThrough Hole6-DIP (0.300", 7.62mm)6-DIP
4N30300W
 ON Semiconductor OPTOISO 5.3KV DARL W/BASE 6DIP устарелый15300Vrms100% @ 10mA
-
5µs, 40µs (Max)
-
DCDarlington with Base30V150mA1.2V80mA1V-55°C ~ 100°CThrough Hole6-DIP (0.400", 10.16mm)6-DIP
4N303S
 ON Semiconductor OPTOISO 5.3KV DARL W/BASE 6SMD устарелый15300Vrms100% @ 10mA
-
5µs, 40µs (Max)
-
DCDarlington with Base30V150mA1.2V80mA1V-55°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
4N303SD
 ON Semiconductor OPTOISO 5.3KV DARL W/BASE 6SMD устарелый15300Vrms100% @ 10mA
-
5µs, 40µs (Max)
-
DCDarlington with Base30V150mA1.2V80mA1V-55°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
4N30S
 ON Semiconductor OPTOISO 5.3KV DARL W/BASE 6SMD устарелый15300Vrms100% @ 10mA
-
5µs, 40µs (Max)
-
DCDarlington with Base30V150mA1.2V80mA1V-55°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
4N30SD
 ON Semiconductor OPTOISO 5.3KV DARL W/BASE 6SMD устарелый15300Vrms100% @ 10mA
-
5µs, 40µs (Max)
-
DCDarlington with Base30V150mA1.2V80mA1V-55°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
4N30W
 ON Semiconductor OPTOISO 5.3KV DARL W/BASE 6DIP устарелый15300Vrms100% @ 10mA
-
5µs, 40µs (Max)
-
DCDarlington with Base30V150mA1.2V80mA1V-55°C ~ 100°CThrough Hole6-DIP (0.400", 10.16mm)6-DIP
4N31300
 ON Semiconductor OPTOISO 5.3KV DARL W/BASE 6DIP устарелый15300Vrms50% @ 10mA
-
5µs, 40µs (Max)
-
DCDarlington with Base30V150mA1.2V80mA1.2V-55°C ~ 100°CThrough Hole6-DIP (0.300", 7.62mm)6-DIP
4N31300W
 ON Semiconductor OPTOISO 5.3KV DARL W/BASE 6DIP устарелый15300Vrms50% @ 10mA
-
5µs, 40µs (Max)
-
DCDarlington with Base30V150mA1.2V80mA1.2V-55°C ~ 100°CThrough Hole6-DIP (0.400", 10.16mm)6-DIP
4N313S
 ON Semiconductor OPTOISO 5.3KV DARL W/BASE 6SMD устарелый15300Vrms50% @ 10mA
-
5µs, 40µs (Max)
-
DCDarlington with Base30V150mA1.2V80mA1.2V-55°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
4N313SD
 ON Semiconductor OPTOISO 5.3KV DARL W/BASE 6SMD устарелый15300Vrms50% @ 10mA
-
5µs, 40µs (Max)
-
DCDarlington with Base30V150mA1.2V80mA1.2V-55°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
4N31S
 ON Semiconductor OPTOISO 5.3KV DARL W/BASE 6SMD устарелый15300Vrms50% @ 10mA
-
5µs, 40µs (Max)
-
DCDarlington with Base30V150mA1.2V80mA1.2V-55°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
4N31SD
 ON Semiconductor OPTOISO 5.3KV DARL W/BASE 6SMD устарелый15300Vrms50% @ 10mA
-
5µs, 40µs (Max)
-
DCDarlington with Base30V150mA1.2V80mA1.2V-55°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
4N31W
 ON Semiconductor OPTOISO 5.3KV DARL W/BASE 6DIP устарелый15300Vrms50% @ 10mA
-
5µs, 40µs (Max)
-
DCDarlington with Base30V150mA1.2V80mA1.2V-55°C ~ 100°CThrough Hole6-DIP (0.400", 10.16mm)6-DIP
4N32300
 ON Semiconductor OPTOISO 5.3KV DARL W/BASE 6DIP устарелый15300Vrms500% @ 10mA
-
5µs, 100µs (Max)
-
DCDarlington with Base30V150mA1.2V80mA1V-55°C ~ 100°CThrough Hole6-DIP (0.300", 7.62mm)6-DIP
4N32300W
 ON Semiconductor OPTOISO 5.3KV DARL W/BASE 6DIP устарелый15300Vrms500% @ 10mA
-
5µs, 100µs (Max)
-
DCDarlington with Base30V150mA1.2V80mA1V-55°C ~ 100°CThrough Hole6-DIP (0.400", 10.16mm)6-DIP
4N323S
 ON Semiconductor OPTOISO 5.3KV DARL W/BASE 6SMD устарелый15300Vrms500% @ 10mA
-
5µs, 100µs (Max)
-
DCDarlington with Base30V150mA1.2V80mA1V-55°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
4N323SD
 ON Semiconductor OPTOISO 5.3KV DARL W/BASE 6SMD устарелый15300Vrms500% @ 10mA
-
5µs, 100µs (Max)
-
DCDarlington with Base30V150mA1.2V80mA1V-55°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
4N32SD
 ON Semiconductor OPTOISO 5.3KV DARL W/BASE 6SMD устарелый15300Vrms500% @ 10mA
-
5µs, 100µs (Max)
-
DCDarlington with Base30V150mA1.2V80mA1V-55°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
4N32W
 ON Semiconductor OPTOISO 5.3KV DARL W/BASE 6DIP устарелый15300Vrms500% @ 10mA
-
5µs, 100µs (Max)
-
DCDarlington with Base30V150mA1.2V80mA1V-55°C ~ 100°CThrough Hole6-DIP (0.400", 10.16mm)6-DIP
4N33300
 ON Semiconductor OPTOISO 5.3KV DARL W/BASE 6DIP устарелый15300Vrms500% @ 10mA
-
5µs, 100µs (Max)
-
DCDarlington with Base30V150mA1.2V80mA1V-55°C ~ 100°CThrough Hole6-DIP (0.300", 7.62mm)6-DIP
4N33300W
 ON Semiconductor OPTOISO 5.3KV DARL W/BASE 6DIP устарелый15300Vrms500% @ 10mA
-
5µs, 100µs (Max)
-
DCDarlington with Base30V150mA1.2V80mA1V-55°C ~ 100°CThrough Hole6-DIP (0.400", 10.16mm)6-DIP
4N333S
 ON Semiconductor OPTOISO 5.3KV DARL W/BASE 6SMD устарелый15300Vrms500% @ 10mA
-
5µs, 100µs (Max)
-
DCDarlington with Base30V150mA1.2V80mA1V-55°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
4N333SD
 ON Semiconductor OPTOISO 5.3KV DARL W/BASE 6SMD устарелый15300Vrms500% @ 10mA
-
5µs, 100µs (Max)
-
DCDarlington with Base30V150mA1.2V80mA1V-55°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
4N33S
 ON Semiconductor OPTOISO 5.3KV DARL W/BASE 6SMD устарелый15300Vrms500% @ 10mA
-
5µs, 100µs (Max)
-
DCDarlington with Base30V150mA1.2V80mA1V-55°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
4N33SD
 ON Semiconductor OPTOISO 5.3KV DARL W/BASE 6SMD устарелый15300Vrms500% @ 10mA
-
5µs, 100µs (Max)
-
DCDarlington with Base30V150mA1.2V80mA1V-55°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
4N33W
 ON Semiconductor OPTOISO 5.3KV DARL W/BASE 6DIP устарелый15300Vrms500% @ 10mA
-
5µs, 100µs (Max)
-
DCDarlington with Base30V150mA1.2V80mA1V-40°C ~ 100°CThrough Hole6-DIP (0.400", 10.16mm)6-DIP
4N35300W
 ON Semiconductor OPTOISO 5.3KV TRANSISTOR W/BASE 6DIP устарелый15300Vrms100% @ 10mA
-
2µs, 2µs
-
DCTransistor with Base30V
-
1.18V100mA300mV-55°C ~ 100°CThrough Hole6-DIP (0.400", 10.16mm)6-DIP
4N353S
 ON Semiconductor OPTOISO 5.3KV TRANSISTOR W/BASE 6SMD устарелый15300Vrms100% @ 10mA
-
2µs, 2µs
-
DCTransistor with Base30V
-
1.18V100mA300mV-55°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
4N353SD
 ON Semiconductor OPTOISO 5.3KV TRANSISTOR W/BASE 6SMD устарелый15300Vrms100% @ 10mA
-
2µs, 2µs
-
DCTransistor with Base30V
-
1.18V100mA300mV-55°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
4N35FM
 ON Semiconductor OPTOISO 7.5KV TRANSISTOR W/BASE 6SMD устарелый17500Vpk100% @ 10mA
-
2µs, 2µs
-
DCTransistor with Base30V
-
1.18V60mA300mV-55°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
4N35FR2M
 ON Semiconductor OPTOISO 7.5KV TRANSISTOR W/BASE 6SMD устарелый17500Vpk100% @ 10mA
-
2µs, 2µs
-
DCTransistor with Base30V
-
1.18V60mA300mV-55°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
4N35FR2VM
 ON Semiconductor OPTOISO 7.5KV TRANSISTOR W/BASE 6SMD устарелый17500Vpk100% @ 10mA
-
2µs, 2µs
-
DCTransistor with Base30V
-
1.18V60mA300mV-55°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
4N35FVM
 ON Semiconductor OPTOISO 7.5KV TRANSISTOR W/BASE 6SMD устарелый17500Vpk100% @ 10mA
-
2µs, 2µs
-
DCTransistor with Base30V
-
1.18V60mA300mV-55°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
4N35SD
 ON Semiconductor OPTOISO 5.3KV TRANSISTOR W/BASE 6SMD устарелый15300Vrms100% @ 10mA
-
2µs, 2µs
-
DCTransistor with Base30V
-
1.18V100mA300mV-55°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
4N35TM
 ON Semiconductor OPTOISO 7.5KV TRANSISTOR W/BASE 6DIP устарелый17500Vpk100% @ 10mA
-
2µs, 2µs
-
DCTransistor with Base30V
-
1.18V60mA300mV-40°C ~ 100°CThrough Hole6-DIP (0.400", 10.16mm)6-DIP
4N35W
 ON Semiconductor OPTOISO 5.3KV TRANSISTOR W/BASE 6DIP устарелый15300Vrms100% @ 10mA
-
2µs, 2µs
-
DCTransistor with Base30V
-
1.18V100mA300mV-55°C ~ 100°CThrough Hole6-DIP (0.400", 10.16mm)6-DIP
4N36300
 ON Semiconductor OPTOISO 5.3KV TRANSISTOR W/BASE 6DIP устарелый15300Vrms100% @ 10mA
-
2µs, 2µs
-
DCTransistor with Base30V
-
1.18V100mA300mV-55°C ~ 100°CThrough Hole6-DIP (0.300", 7.62mm)6-DIP
4N36300W
 ON Semiconductor OPTOISO 5.3KV TRANSISTOR W/BASE 6DIP устарелый15300Vrms100% @ 10mA
-
2µs, 2µs
-
DCTransistor with Base30V
-
1.18V100mA300mV-55°C ~ 100°CThrough Hole6-DIP (0.400", 10.16mm)6-DIP
4N363S
 ON Semiconductor OPTOISO 5.3KV TRANSISTOR W/BASE 6SMD устарелый15300Vrms100% @ 10mA
-
2µs, 2µs
-
DCTransistor with Base30V
-
1.18V100mA300mV-55°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
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