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Производители для Оптоизоляторы - транзистор, фотогальванический выход

Broadcom Limited
CEL (California Eastern Laboratories)
Everlight Electronics
Infineon Technologies
Isocom
IXYS Integrated Circuits Division
Lite-On, Inc.
Lumex, Inc.
ON Semiconductor
Panasonic
QT Brightek
Renesas Electronics America
Sharp Microelectronics
Skyworks Solutions, Inc.
Socle Technology Corporation
Standex-Meder Electronics
Taiwan Semiconductor
Toshiba Semiconductor and Storage
TT Electronics/Optek Technology
Vishay
Weidmüller
номер части Производитель / Марка Краткое описание Статус деталиКоличество каналовНапряжение - изоляцияКоэффициент передачи в реальном времени (мин.)Коэффициент передачи тока (макс.)Время включения / выключения (Тип)Время нарастания / падения (Тип)Тип вводаТип выходаНапряжение - выход (макс.)Текущий - выход / каналНапряжение - Вперед (Vf) (Тип)Current - DC Forward (If) (Max)Vce Saturation (Макс.)Рабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
MCT61
 ON Semiconductor OPTOISO 5KV 2CH TRANSISTOR 8DIP в производстве25000Vrms50% @ 5mA
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2.4µs, 2.4µs
-
DCTransistor30V30mA1.2V60mA400mV-55°C ~ 100°CThrough Hole8-DIP (0.300", 7.62mm)8-DIP
FOD852
 ON Semiconductor OPTOISOLATOR 5KV DARLINGTON 4DIP в производстве15000Vrms1000% @ 1mA15000% @ 1mA
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100µs, 20µsDCDarlington300V150mA1.2V50mA1.2V-30°C ~ 100°CThrough Hole4-DIP (0.300", 7.62mm)4-DIP
FOD852S
 ON Semiconductor OPTOISOLATOR 5KV DARLINGTON 4SMD в производстве15000Vrms1000% @ 1mA15000% @ 1mA
-
100µs, 20µsDCDarlington300V150mA1.2V50mA1.2V-30°C ~ 100°CSMD Поверхностный монтаж4-SMD, Gull Wing4-SMD
MOCD208M
 ON Semiconductor OPTOISO 2.5KV 2CH TRANSISTOR 8SOIC в производстве22500Vrms40% @ 10mA125% @ 10mA7.5µs, 5.7µs3.2µs, 4.7µsDCTransistor70V150mA1.25V60mA400mV-40°C ~ 100°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO Tall
MCT62
 ON Semiconductor OPTOISO 5KV 2CH TRANSISTOR 8DIP в производстве25000Vrms100% @ 5mA
-
2.4µs, 2.4µs
-
DCTransistor30V30mA1.2V60mA400mV-55°C ~ 100°CThrough Hole8-DIP (0.300", 7.62mm)8-DIP
MCT62S
 ON Semiconductor OPTOISO 5KV 2CH TRANSISTOR 8SMD в производстве25000Vrms100% @ 5mA
-
2.4µs, 2.4µs
-
DCTransistor30V30mA1.2V60mA400mV-55°C ~ 100°CSMD Поверхностный монтаж8-SMD, Gull Wing8-SMD
MCT9001
 ON Semiconductor OPTOISO 5KV 2CH TRANSISTOR 8DIP в производстве25000Vrms50% @ 5mA600% @ 5mA3µs, 3µs2.4µs, 2.4µsDCTransistor55V30mA1V60mA400mV-55°C ~ 100°CThrough Hole8-DIP (0.300", 7.62mm)8-DIP
MOCD213M
 ON Semiconductor OPTOISO 2.5KV 2CH TRANSISTOR 8SOIC в производстве22500Vrms100% @ 10mA
-
3µs, 2.8µs1.6µs, 2.2µsDCTransistor70V150mA1.25V60mA400mV-40°C ~ 100°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO Tall
FODM8801A
 ON Semiconductor OPTOISO 3.75KV TRANSISTOR 4-MINI-FLAT в производстве13750Vrms80% @ 1mA160% @ 1mA6µs, 6µs5µs, 5.5µsDCTransistor75V30mA1.35V20mA400mV-40°C ~ 125°CSMD Поверхностный монтаж4-SOIC (0.173", 4.40mm Width)4-Mini-Flat
FODM8801C
 ON Semiconductor OPTOISO 3.75KV TRANSISTOR 4-MINI-FLAT в производстве13750Vrms200% @ 1mA400% @ 1mA6µs, 6µs5µs, 5.5µsDCTransistor75V30mA1.35V20mA400mV-40°C ~ 125°CSMD Поверхностный монтаж4-SOIC (0.173", 4.40mm Width)4-Mini-Flat
FODM8801B
 ON Semiconductor OPTOISO 3.75KV TRANSISTOR 4-MINI-FLAT в производстве13750Vrms130% @ 1mA260% @ 1mA6µs, 6µs5µs, 5.5µsDCTransistor75V30mA1.35V20mA400mV-40°C ~ 125°CSMD Поверхностный монтаж4-SOIC (0.173", 4.40mm Width)4-Mini-Flat
MCT5210M
 ON Semiconductor OPTOISO 4.17KV TRANSISTOR W/BASE 6DIP в производстве14170Vrms70% @ 3mA
-
10µs, 400ns
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DCTransistor with Base30V150mA1.25V50mA400mV-40°C ~ 100°CThrough Hole6-DIP (0.300", 7.62mm)6-DIP
6N136M
 ON Semiconductor OPTOISO 5KV TRANSISTOR W/BASE 8DIP в производстве15000Vrms19% @ 16mA50% @ 16mA250ns, 260ns
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DCTransistor with Base20V8mA1.45V25mA
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-40°C ~ 100°CThrough Hole8-DIP (0.300", 7.62mm)8-DIP
FODM8801CV
 ON Semiconductor OPTOISO 3.75KV TRANSISTOR 4-MINI-FLAT в производстве13750Vrms200% @ 1mA400% @ 1mA6µs, 6µs5µs, 5.5µsDCTransistor75V30mA1.35V20mA400mV-40°C ~ 125°CSMD Поверхностный монтаж4-SOIC (0.173", 4.40mm Width)4-Mini-Flat
6N139SM
 ON Semiconductor OPTOISO 5KV DARL W/BASE 8SMD в производстве15000Vrms500% @ 1.6mA
-
240ns, 1.3µs
-
DCDarlington with Base18V60mA1.3V20mA
-
-40°C ~ 100°CSMD Поверхностный монтаж8-SMD, Gull Wing8-SMD
MOCD223M
 ON Semiconductor OPTOISOLTR 2.5KV 2CH DARL 8SOIC в производстве22500Vrms500% @ 1mA
-
10µs, 125µs8µs, 110µsDCDarlington30V150mA1.25V60mA1V-40°C ~ 100°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO Tall
HCPL0453
 ON Semiconductor OPTOCOUPLR TRANSISTOR 1CH HS 8SOIC в производстве12500Vrms19% @ 16mA50% @ 16mA450ns, 300ns
-
DCTransistor20V8mA1.45V25mA
-
-40°C ~ 85°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO Tall
HCPL0500
 ON Semiconductor OPTOCOUPLER SGL TRANSISTOR OUT 8SOIC в производстве12500Vrms7% @ 16mA50% @ 16mA450ns, 500ns
-
DCTransistor with Base20V8mA1.45V25mA
-
-40°C ~ 85°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO Tall
FODM453
 ON Semiconductor OPTOISO 3.75KV TRANSISTOR 5MFP в производстве13750Vrms20% @ 16mA50% @ 16mA400ns, 350ns
-
DCTransistor20V8mA1.6V25mA
-
-40°C ~ 85°CSMD Поверхностный монтаж6-SOIC (0.173", 4.40mm Width), 5 Leads5-Mini-Flat
HCPL0501
 ON Semiconductor OPTOCOUPLER SGL TRANSISTOR OUT 8-SO в производстве12500Vrms19% @ 16mA50% @ 16mA450ns, 300ns
-
DCTransistor with Base20V8mA1.45V25mA
-
-40°C ~ 85°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO Tall
HCPL2531
 ON Semiconductor OPTOISO 2.5KV 2CH TRANSISTOR 8DIP в производстве22500Vrms19% @ 16mA50% @ 16mA450ns, 300ns
-
DCTransistor20V8mA1.45V25mA
-
-55°C ~ 100°CThrough Hole8-DIP (0.300", 7.62mm)8-DIP
HCPL4503M
 ON Semiconductor OPTOISO 5KV TRANSISTOR W/BASE 8DIP в производстве15000Vrms19% @ 16mA50% @ 16mA250ns, 260ns
-
DCTransistor with Base20V8mA1.45V25mA
-
-40°C ~ 100°CThrough Hole8-DIP (0.300", 7.62mm)8-DIP
HCPL2730
 ON Semiconductor OPTOISO 2.5KV 2CH DARL 8DIP в производстве22500Vrms300% @ 1.6mA
-
300ns, 5µs
-
DCDarlington7V60mA1.3V20mA
-
-40°C ~ 85°CThrough Hole8-DIP (0.300", 7.62mm)8-DIP
H11F1VM
 ON Semiconductor OPTOISOLTR 7.5KV PHOTO FET 6-DIP в производстве17500Vpk
-
-
45µs, 45µs (Max)
-
DCMOSFET30V
-
1.3V60mA
-
-40°C ~ 100°CThrough Hole6-DIP (0.300", 7.62mm)6-DIP
H11F1SM
 ON Semiconductor OPTOISOLTR 7.5KV PHOTO FET 6-SMD в производстве17500Vpk
-
-
45µs, 45µs (Max)
-
DCMOSFET30V
-
1.3V60mA
-
-40°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
H11F3M
 ON Semiconductor OPTOISOLTR 7.5KV PHOTO FET 6-DIP в производстве17500Vpk
-
-
45µs, 45µs (Max)
-
DCMOSFET15V
-
1.3V60mA
-
-40°C ~ 100°CThrough Hole6-DIP (0.300", 7.62mm)6-DIP
HCPL0531
 ON Semiconductor OPTOCOUPLR TRANSISTOR 2CHAN HS 8SOIC в производстве22500Vrms19% @ 16mA50% @ 16mA450ns, 300ns
-
DCTransistor20V8mA1.45V25mA
-
-40°C ~ 85°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO Tall
HCPL3700S
 ON Semiconductor OPTOISO 2.5KV DARLINGTON 8-SMD в производстве12500Vrms
-
-
6µs, 25µs45µs, 0.5µsAC, DCDarlington20V30mA
-
-
-
-40°C ~ 85°CSMD Поверхностный монтаж8-SMD, Gull Wing8-SMD
FOD8173SD
 ON Semiconductor OPTOISOLATOR 5KV TRANSISTOR 4SMD в производстве15000Vrms50% @ 5mA600% @ 5mA
-
4µs, 3µsDCTransistor70V50mA1.2V50mA200mV-55°C ~ 110°CSMD Поверхностный монтаж4-SMD, Gull Wing4-SMD
FOD8143SD
 ON Semiconductor OPTOISOLATOR 5KV TRANSISTOR 4SMD в производстве15000Vrms20% @ 1mA300% @ 1mA
-
4µs, 3µsAC, DCTransistor70V50mA1.2V50mA200mV-55°C ~ 105°CSMD Поверхностный монтаж4-SMD, Gull Wing4-SMD
CNY17F3SR2VM
 ON Semiconductor OPTOISO 4.17KV TRANSISTOR 6SMD в производстве14170Vrms100% @ 10mA200% @ 10mA2µs, 3µs4µs, 3.5µs (Max)DCTransistor70V50mA1.35V60mA400mV-40°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
CNY172SR2M
 ON Semiconductor OPTOISO 4.17KV TRANSISTOR W/BASE 6SMD в производстве14170Vrms63% @ 10mA125% @ 10mA2µs, 3µs4µs, 3.5µs (Max)DCTransistor with Base70V50mA1.35V60mA400mV-40°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
CNY173SR2M
 ON Semiconductor OPTOISO 4.17KV TRANSISTOR W/BASE в производстве14170Vrms100% @ 10mA200% @ 10mA2µs, 3µs4µs, 3.5µs (Max)DCTransistor with Base70V50mA1.35V60mA400mV-40°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
MOC205R2M
 ON Semiconductor OPTOISO 2.5KV TRANSISTOR W/BASE 8SOIC в производстве12500Vrms40% @ 10mA80% @ 10mA7.5µs, 5.7µs3.2µs, 4.7µsDCTransistor with Base30V150mA1.15V60mA400mV-40°C ~ 100°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO Tall
H11B1SR2M
 ON Semiconductor OPTOISO 4.17KV DARL W/BASE 6SMD в производстве14170Vrms500% @ 1mA
-
25µs, 18µs
-
DCDarlington with Base30V150mA1.2V80mA1V-40°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
H11G2SR2M
 ON Semiconductor OPTOISO 4.17KV DARL W/BASE 6SMD в производстве14170Vrms1000% @ 10mA
-
5µs, 100µs
-
DCDarlington with Base80V
-
1.3V60mA1V-40°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
MOC8050SR2VM
 ON Semiconductor OPTOISO 4.17KV DARLINGTON 6SMD в производстве14170Vrms500% @ 10mA
-
8.5µs, 95µs
-
DCDarlington80V150mA1.18V60mA
-
-40°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
H11D1SR2M
 ON Semiconductor OPTOISO 4.17KV TRANSISTOR W/BASE 6SMD в производстве14170Vrms20% @ 10mA
-
5µs, 5µs
-
DCTransistor with Base300V100mA1.15V80mA400mV-40°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
H11D1SR2VM
 ON Semiconductor OPTOISO 4.17KV TRANSISTOR W/BASE 6SMD в производстве14170Vrms20% @ 10mA
-
5µs, 5µs
-
DCTransistor with Base300V100mA1.15V80mA400mV-40°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
H11AG1SR2M
 ON Semiconductor OPTOISO 4.17KV TRANSISTOR W/BASE 6SMD в производстве14170Vrms100% @ 1mA
-
5µs, 5µs
-
DCTransistor with Base30V50mA1.25V50mA400mV-40°C ~ 100°CSMD Поверхностный монтаж6-SMD, Gull Wing6-SMD
FOD617C
 ON Semiconductor OPTOISOLATOR 5KV TRANSISTOR 4DIP устарелый15000Vrms100% @ 10mA200% @ 10mA
-
4µs, 3µsDCTransistor70V50mA1.35V50mA400mV-55°C ~ 110°CThrough Hole4-DIP (0.300", 7.62mm)4-DIP
FOD817CS
 ON Semiconductor OPTOISOLATOR 5KV TRANSISTOR 4SMD в производстве15000Vrms200% @ 5mA400% @ 5mA
-
4µs, 3µsDCTransistor70V50mA1.2V50mA200mV-55°C ~ 110°CSMD Поверхностный монтаж4-SMD, Gull Wing4-SMD
FOD817A3S
 ON Semiconductor OPTOISOLATOR 5KV TRANSISTOR 4SMD в производстве15000Vrms80% @ 5mA160% @ 5mA
-
4µs, 3µsDCTransistor70V50mA1.2V50mA200mV-55°C ~ 110°CSMD Поверхностный монтаж4-SMD, Gull Wing4-SMD
FOD8173S
 ON Semiconductor OPTOISOLATOR 5KV TRANSISTOR 4SMD в производстве15000Vrms50% @ 5mA600% @ 5mA
-
4µs, 3µsDCTransistor70V50mA1.2V50mA200mV-55°C ~ 110°CSMD Поверхностный монтаж4-SMD, Gull Wing4-SMD
FOD817B300W
 ON Semiconductor OPTOISOLATOR 5KV TRANSISTOR 4DIP в производстве15000Vrms130% @ 5mA260% @ 5mA
-
4µs, 3µsDCTransistor70V50mA1.2V50mA200mV-55°C ~ 110°CThrough Hole4-DIP (0.400", 10.16mm)4-DIP
FOD817D300W
 ON Semiconductor OPTOISOLATOR 5KV TRANSISTOR 4DIP в производстве15000Vrms300% @ 5mA600% @ 5mA
-
4µs, 3µsDCTransistor70V50mA1.2V50mA200mV-55°C ~ 110°CThrough Hole4-DIP (0.400", 10.16mm)4-DIP
FOD2741BSDV
 ON Semiconductor OPTOISOLATOR 5KV TRANSISTOR 8SMD в производстве15000Vrms100% @ 10mA200% @ 10mA
-
-
DCTransistor30V50mA1.5V (Max)
-
400mV-40°C ~ 85°CSMD Поверхностный монтаж8-SMD, Gull Wing8-SMD
FOD814S
 ON Semiconductor OPTOISOLATOR 5KV TRANSISTOR 4SMD в производстве15000Vrms20% @ 1mA300% @ 1mA
-
4µs, 3µsAC, DCTransistor70V50mA1.2V50mA200mV-55°C ~ 105°CSMD Поверхностный монтаж4-SMD, Gull Wing4-SMD
FOD814A300W
 ON Semiconductor OPTOISOLATOR 5KV TRANSISTOR 4DIP в производстве15000Vrms50% @ 1mA150% @ 1mA
-
4µs, 3µsAC, DCTransistor70V50mA1.2V50mA200mV-55°C ~ 105°CThrough Hole4-DIP (0.400", 10.16mm)4-DIP
4N27M
 ON Semiconductor OPTOISO 4.17KV TRANSISTOR W/BASE 6DIP в производстве14170Vrms10% @ 10mA
-
2µs, 2µs
-
DCTransistor with Base30V
-
1.18V60mA500mV-40°C ~ 100°CThrough Hole6-DIP (0.300", 7.62mm)6-DIP
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