номер части Производитель / Марка Краткое описание Статус деталиТип IGBTНапряжение - Разрыв эмиттера коллектора (макс.)Ток - коллектор (Ic) (макс.)Текущий - коллектор импульсный (Icm)Vce (вкл.) (Макс.) @ Vge, IcМощность - макс.Энергия переключенияТип вводаВорота затвораTd (вкл. / Выкл.) При 25 ° CУсловия тестированияВремя обратного восстановления (trr)Рабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
ON Semiconductor IGBT 1200V 64A 417W TO247 в производствеNPT1200V64A160A3.2V @ 15V, 40A417W2.3mJ (on), 1.1mJ (off)Standard220nC15ns/110ns600V, 40A, 5 Ohm, 15V
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Through HoleTO-247-3TO-247
ON Semiconductor IGBT 650V 150A 455W TO-247 в производствеField Stop650V150A300A2.1V @ 15V, 75A455W1.06mJ (on), 1.56mJ (off)Standard126nC55ns/189ns400V, 75A, 15 Ohm, 15V76ns-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247
ON Semiconductor IGBT 300V 75A 463W TO247 в производствеPT300V75A240A1.4V @ 15V, 30A463W130µJ (on), 92µJ (off)Standard180nC20ns/135ns180V, 30A, 5 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 1000V 50A 156W TO3P в производствеNPT and Trench1000V50A200A2.9V @ 15V, 60A156W
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Standard257nC34ns/243ns600V, 60A, 10 Ohm, 15V75ns-55°C ~ 150°C (TJ)Through HoleTO-3P-3, SC-65-3TO-3P
ON Semiconductor IGBT 1200V 15A TO247-3 устарелый
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1200V30A120A2.2V @ 15V, 15A156W1.17mJ (on), 550µJ (off)Standard150nC72ns/168ns600V, 15A, 10 Ohm, 15V166ns-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 600V 120A 600W TO247 в производствеField Stop600V120A180A2.5V @ 15V, 60A600W1.26mJ (on), 450µJ (off)Standard189nC18ns/104ns400V, 60A, 3 Ohm, 15V39ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
ON Semiconductor IGBT 600V 40A 165W TO220 в производствеField Stop600V40A60A2.4V @ 15V, 20A165W380µJ (on), 260µJ (off)Standard63nC13ns/87ns400V, 20A, 10 Ohm, 15V35ns-55°C ~ 150°C (TJ)Through HoleTO-220-3TO-220-3
ON Semiconductor IGBT 430V 240A 30W TO-220F-3FS в производстве
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430V
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240A5V @ 15V, 240A30W
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Standard
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46ns/140ns320V, 240A, 10 Ohm, 15V
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150°C (TJ)Through HoleTO-220-3 Full PackTO-220F-3FS
ON Semiconductor IGBT 600V 150A 750W POWER-247 в производствеField Stop600V150A225A2.5V @ 15V, 75A750W2.3mJ (on), 770µJ (off)Standard248nC24ns/136ns400V, 75A, 3 Ohm, 15V55ns-55°C ~ 175°C (TJ)Through HoleTO-247-3 VariantPowerTO-247-3
ON Semiconductor IGBT 600V 30A 117W TO220-3 в производствеNPT600V30A120A1.95V @ 15V, 15A117W900µJ (on), 300µJ (off)Standard80nC78ns/130ns400V, 15A, 22 Ohm, 15V270ns-55°C ~ 150°C (TJ)Through HoleTO-220-3TO-220
ON Semiconductor IGBT 600V 30A 117W TO220-3 в производствеNPT600V30A120A1.7V @ 15V, 15A117W550µJ (on), 350µJ (off)Standard88nC65ns/170ns400V, 15A, 22 Ohm, 15V270ns-55°C ~ 150°C (TJ)Through HoleTO-220-3TO-220
ON Semiconductor IGBT 600V 23A 100W TO220-3 в производстве
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600V23A92A2.6V @ 15V, 12A100W115µJ (on), 135µJ (off)Standard
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17ns/60ns300V, 12A, 23 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-220-3TO-220-3
ON Semiconductor IGBT 1400V 40A 272W TO-3PN в производствеTrench Field Stop1400V40A60A2.4V @ 15V, 20A272W
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Standard203.5nC
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-55°C ~ 175°C (TJ)Through HoleTO-3P-3, SC-65-3TO-3PN
ON Semiconductor IGBT 600V 24A 104W TO247 устарелый
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600V24A96A2.2V @ 15V, 15A104W380µJ (on), 900µJ (off)Standard48nC
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42ns-40°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 1200V 64A 500W TO264 устарелыйNPT1200V64A160A3.2V @ 15V, 40A500W2.3mJ (on), 1.1mJ (off)Standard220nC15ns/110ns600V, 40A, 5 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-264-3, TO-264AATO-264
ON Semiconductor IGBT 600V 20A 42W TO-220F в производствеNPT600V20A30A2.45V @ 15V, 10A42W150µJ (on), 50µJ (off)Standard37nC8ns/52.2ns400V, 10A, 10 Ohm, 15V37.7ns-55°C ~ 150°C (TJ)Through HoleTO-220-3 Full PackTO-220F-3
ON Semiconductor IGBT 1200V 40A 384W TO247 в производствеTrench Field Stop1200V40A120A2.45V @ 15V, 20A384W450µJ (off)Standard225nC-/235ns600V, 20A, 10 Ohm, 15V
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-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 600V 80A 79W TO-3PF в производствеField Stop600V80A120A1.9V @ 15V, 40A115W870µJ (on), 260µJ (off)Standard119nC12ns/92ns400V, 40A, 6 Ohm, 15V36ns-55°C ~ 175°C (TJ)Through HoleTO-3P-3 Full PackTO-3PF
ON Semiconductor IGBT 1200V 25A TO247-3 устарелыйTrench Field Stop1200V50A200A2.2V @ 15V, 25A192W1.5mJ (on), 950µJ (off)Standard220nC91ns/228ns600V, 25A, 10 Ohm, 15V240ns-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 1200V 70A 368W TO264 в производствеTrench Field Stop1200V70A105A2.2V @ 15V, 35A368W2.5mJ (on), 1.7mJ (off)Standard210nC34ns/172ns600V, 35A, 10 Ohm, 15V337ns-55°C ~ 150°C (TJ)Through HoleTO-264-3, TO-264AATO-264
ON Semiconductor IGBT 600V 10A 83W TO220 в производствеField Stop600V10A36A3.2V @ 12V, 14A83W38µJ (on), 130µJ (off)Standard18.3nC4.3ns/36ns400V, 5A, 10 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-220-3TO-220-3
ON Semiconductor IGBT 1250V 30A 136W TO3PN в производствеTrench1250V30A45A2.72V @ 15V, 15A136W
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Standard129nC
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-55°C ~ 175°C (TJ)Through HoleTO-3P-3, SC-65-3TO-3PN
ON Semiconductor IGBT 600V 34A 125W TO220AB устарелый
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600V34A56A2.7V @ 15V, 7A125W55µJ (on), 60µJ (off)Standard37nC11ns/100ns390V, 7A, 25 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-220-3TO-220AB
ON Semiconductor IGBT 15A 600V TO220-3 в производстве
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600V24A60A2.1V @ 15V, 15A54W550µJ (on), 220µJ (off)Standard80nC70ns/190ns300V, 15A, 30 Ohm, 15V95ns175°C (TJ)Through HoleTO-220-3 Full PackTO-220F-3FS
ON Semiconductor IGBT 600V 10A TO220F3 в производстве
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600V20A72A1.7V @ 15V, 10A40W
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Standard55nC40ns/145ns300V, 10A, 30 Ohm, 15V70ns150°C (TJ)Through HoleTO-220-3 Full PackTO-220F-3FS
ON Semiconductor IGBT 600V 24A 54W TO-3PF в производстве
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600V24A88A1.6V @ 15V, 12A54W
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Standard84nC55ns/200ns300V, 15A, 30 Ohm, 15V
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150°C (TJ)Through HoleTO-3P-3 Full Pack
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ON Semiconductor IGBT 600V 30A 178W TO220-3 в производствеNPT600V30A45A2.7V @ 15V, 15A178W370µJ (on), 67µJ (off)Standard43nC9.3ns/54.8ns400V, 15A, 10 Ohm, 15V82.4ns-55°C ~ 150°C (TJ)Through HoleTO-220-3TO-220-3
ON Semiconductor IGBT 600V 54A 167W TO220AB устарелый
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600V54A96A2.7V @ 15V, 12A167W55µJ (on), 50µJ (off)Standard78nC17ns/96ns390V, 12A, 10 Ohm, 15V30ns-55°C ~ 150°C (TJ)Through HoleTO-220-3TO-220AB
ON Semiconductor IGBT 600V 40A 64W TO-3PF в производстве
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600V40A105A1.65V @ 15V, 20A64W
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Standard84nC60ns/193ns300V, 20A, 30 Ohm, 15V
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175°C (TJ)Through HoleTO-3P-3 Full Pack
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ON Semiconductor IGBT 600V 40A 100W TO3PF в производстве
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600V40A160A3V @ 15V, 20A100W470µJ (on), 130µJ (off)Standard77nC15ns/65ns300V, 20A, 10 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleSC-94TO-3PF
ON Semiconductor IGBT FIELD STOP 650V 80A TO247 в производствеField Stop650V80A160A1.7V @ 15V, 40A405W420µJ (off)Standard190nC
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400V, 40A, 10 Ohm, 15V
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-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 25A 1200V TO-247 в производствеTrench1200V50A100A2.4V @ 15V, 25A385W1.95mJ (on), 600µJ (off)Standard178nC87ns/179ns600V, 25A, 10 Ohm, 15V154ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
ON Semiconductor IGBT 600V 30A TO247 в производстве
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600V100A60A1.6V @ 15V, 30A225W310µJ (on), 1.14mJ (off)Standard166nC100ns/390ns300V, 30A, 30 Ohm, 15V70ns175°C (TJ)Through HoleTO-247-3TO-247-3
ON Semiconductor IGBT 1200V 25A TO-247 в производствеTrench Field Stop1200V50A100A2.4V @ 15V, 25A385W1.95mJ (on), 600µJ (off)Standard178nC87ns/179ns600V, 25A, 10 Ohm, 15V
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-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
ON Semiconductor IGBT 1350V 30A TO247 в производствеTrench Field Stop1350V60A120A3V @ 15V, 30A394W630µA (off)Standard220nC-/200ns600V, 30A, 10 Ohm, 15V
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-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
ON Semiconductor IGBT 1350V 60A 394W TO247 в производствеTrench Field Stop1350V60A120A2.65V @ 15V, 30A394W850µJ (off)Standard234nC-/250ns600V, 30A, 10 Ohm, 15V
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-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 1350V 80A 394W TO247 в производствеTrench Field Stop1350V80A120A2.7V @ 15V, 40A394W1.3mJ (off)Standard234nC-/250ns600V, 40A, 10 Ohm, 15V
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-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT FIELD STOP 1.2KV TO247-4 в производствеField Stop1200V200A200A2.6V @ 15V, 50A536W2.15mJ (on), 1.4mJ (off)Standard313nC28ns/150ns600V, 50A, 10 Ohm, 15V281ns-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4L
ON Semiconductor IGBT 600V 80A 257W TO247 устарелыйTrench Field Stop600V80A160A2.1V @ 15V, 40A257W890µJ (on), 440µJ (off)Standard171nC85ns/174ns400V, 40A, 10 Ohm, 15V77ns-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 600V 80A 417W TO247 в производствеTrench Field Stop600V80A160A2.61V @ 15V, 40A417W1.17mJ (on), 280µJ (off)Standard228nC98ns/213ns400V, 40A, 10 Ohm, 15V73ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 1.2KV 40A TO247-3 в производствеTrench Field Stop1200V160A160A1.95V @ 15V, 40A454W2.2mJ (on), 1.1mJ (off)Standard212nC12ns/145ns600V, 40A, 10 Ohm, 15V163ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
ON Semiconductor IGBT 1200V 40A TO-247 в производствеTrench Field Stop1200V80A200A2.4V @ 15V, 40A535W3.4mJ (on), 1.1mJ (off)Standard313nC116ns/286ns600V, 40A, 10 Ohm, 15V
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-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
ON Semiconductor IGBT 600V 75A TO247 в производствеTrench Field Stop650V100A200A2V @ 15V, 75A595W1.5mJ (on), 1mJ (off)Standard310nC110ns/270ns400V, 75A, 10 Ohm, 15V80ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 1200V 60A 452W TO247 в производствеTrench Field Stop1200V60A120A2.3V @ 15V, 30A452W2.6mJ (on), 700µJ (off)Standard220nC98ns/210ns600V, 30A, 10 Ohm, 15V240ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 1200V 60A 534W TO247 в производствеTrench Field Stop1200V60A120A1.9V @ 15V, 30A534W4.4mJ (on), 1.4mJ (off)Standard310nC116ns/285ns600V, 30A, 10 Ohm, 15V450ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 9A 600V DPAK в производстве
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600V9A12A2.1V @ 15V, 3A49W50µJ (on), 27µJ (off)Standard17nC27ns/59ns300V, 3A, 30 Ohm, 15V65ns175°C (TJ)SMD Поверхностный монтажTO-252-3, DPak (2 Leads + Tab), SC-63DPAK
ON Semiconductor IGBT 600V 6A 40W DPAK в производстве
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600V6A25A1.5V @ 10V, 3A40W250µJ (on), 1mJ (off)Standard12.5nC40ns/600ns480V, 3A, 470 Ohm, 10V234ns
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SMD Поверхностный монтажTO-252-3, DPak (2 Leads + Tab), SC-63D-Pak
ON Semiconductor IGBT 10A 600V DPAK в производстве
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600V20A40A2.1V @ 15V, 10A72W412µJ (on), 140µJ (off)Standard53nC48ns/120ns300V, 10A, 30 Ohm, 15V90ns175°C (TJ)SMD Поверхностный монтажTO-252-3, DPak (2 Leads + Tab), SC-63DPAK
ON Semiconductor IGBT 400V 150A 8SOIC в производстве
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400V
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150A5V @ 4V, 150A1.2W
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Standard
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150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
ON Semiconductor IGBT 600V 10A 73.5W D2PAK в производствеNPT600V10A15A2.4V @ 15V, 5A73.5W80µJ (on), 70µJ (off)Standard12.1nC5.4ns/25.4ns400V, 5A, 10 Ohm, 15V35ns-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB (D²PAK)
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