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Производители для Транзисторы - IGBT - Single

Alpha and Omega Semiconductor, Inc.
Diodes Incorporated
GeneSiC Semiconductor
Global Power Technologies Group, Inc.
Infineon Technologies
IXYS Corporation
Littelfuse
Microchip Technology
Microsemi
ON Semiconductor
Renesas Electronics America
ROHM Semiconductor
Sanken Electric Co., Ltd.
STMicroelectronics
Toshiba Semiconductor and Storage
номер части Производитель / Марка Краткое описание Статус деталиТип IGBTНапряжение - Разрыв эмиттера коллектора (макс.)Ток - коллектор (Ic) (макс.)Текущий - коллектор импульсный (Icm)Vce (вкл.) (Макс.) @ Vge, IcМощность - макс.Энергия переключенияТип вводаВорота затвораTd (вкл. / Выкл.) При 25 ° CУсловия тестированияВремя обратного восстановления (trr)Рабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
HGTP10N120BN
 ON Semiconductor IGBT 1200V 35A 298W TO220AB устарелыйNPT1200V35A80A2.7V @ 15V, 10A298W320µJ (on), 800µJ (off)Standard100nC23ns/165ns960V, 10A, 10 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-220-3TO-220AB
FGH20N60UFDTU
 ON Semiconductor IGBT 600V 40A 165W TO247 в производствеField Stop600V40A60A2.4V @ 15V, 20A165W380µJ (on), 260µJ (off)Standard63nC13ns/87ns400V, 20A, 10 Ohm, 15V34ns-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
NGTD13T65F2SWK
 ON Semiconductor IGBT TRENCH FIELD STOP 650V DIE в производствеTrench Field Stop650V
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120A2.2V @ 15V, 30A
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Standard
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-55°C ~ 175°C (TJ)SMD Поверхностный монтажDieDie
NGTD14T65F2SWK
 ON Semiconductor IGBT TRENCH FIELD STOP 650V DIE в производствеTrench Field Stop650V
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120A2V @ 15V, 35A
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Standard
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-55°C ~ 175°C (TJ)SMD Поверхностный монтажDieDie
HGTG7N60A4D
 ON Semiconductor IGBT 600V 34A 125W TO247 устарелый
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600V34A56A2.7V @ 15V, 7A125W55µJ (on), 60µJ (off)Standard37nC11ns/100ns390V, 7A, 25 Ohm, 15V34ns-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
NGTD17T65F2WP
 ON Semiconductor IGBT TRENCH FIELD STOP 650V DIE в производствеTrench Field Stop650V
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160A2V @ 15V, 40A
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Standard
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-55°C ~ 175°C (TJ)SMD Поверхностный монтажDieDie
NGTB20N60L2TF1G
 ON Semiconductor IGBT 600V 20A TO3PF в производстве
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600V40A80A1.65V @ 15V, 20A64W
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Standard84nC60ns/193ns300V, 20A, 30 Ohm, 15V70ns175°C (TJ)Through HoleTO-3PFM, SC-93-3TO-3PF-3
NGTD17T65F2SWK
 ON Semiconductor IGBT TRENCH FIELD STOP 650V DIE в производствеTrench Field Stop650V
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160A2V @ 15V, 40A
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Standard
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-55°C ~ 175°C (TJ)SMD Поверхностный монтажDieDie
FGA40N65SMD
 ON Semiconductor IGBT 650V 80A 349W TO3P в производствеField Stop650V80A120A2.5V @ 15V, 40A349W820µJ (on), 260µJ (off)Standard119nC12ns/92ns400V, 40A, 6 Ohm, 15V42ns-55°C ~ 175°C (TJ)Through HoleTO-3P-3, SC-65-3TO-3PN
NGTD20T120F2WP
 ON Semiconductor IGBT TRENCH FIELD STOP 1200V DIE в производствеTrench Field Stop1200V
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100A2.4V @ 15V, 20A
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Standard
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-55°C ~ 175°C (TJ)SMD Поверхностный монтажDieDie
NGTD20T120F2SWK
 ON Semiconductor IGBT TRENCH FIELD STOP 1200V DIE в производствеTrench Field Stop1200V
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100A2.4V @ 15V, 20A
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Standard
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-55°C ~ 175°C (TJ)SMD Поверхностный монтажDieDie
SGH20N60RUFDTU
 ON Semiconductor IGBT 600V 32A 195W TO3P устарелый
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600V32A60A2.8V @ 15V, 20A195W524µJ (on), 473µJ (off)Standard55nC30ns/48ns300V, 20A, 10 Ohm, 15V95ns-55°C ~ 150°C (TJ)Through HoleTO-3P-3, SC-65-3TO-3PN
NGTD21T65F2WP
 ON Semiconductor IGBT TRENCH FIELD STOP 650V DIE в производствеTrench Field Stop650V
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200A1.9V @ 15V, 45A
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Standard
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-55°C ~ 175°C (TJ)SMD Поверхностный монтажDieDie
FGH40T65SQD-F155
 ON Semiconductor 650V 40A FS4 TRENCH IGBT в производствеTrench Field Stop650V80A160A2.1V @ 15V, 40A238W138µJ (on), 52µJ (off)Standard80nC16.4ns/86.4ns400V, 10A, 6 Ohm, 15V31.8ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
NGTD21T65F2SWK
 ON Semiconductor IGBT TRENCH FIELD STOP 650V DIE в производствеTrench Field Stop650V
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200A1.9V @ 15V, 45A
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Standard
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-55°C ~ 175°C (TJ)SMD Поверхностный монтажDieDie
NGTB15N135IHRWG
 ON Semiconductor IGBT 1350V 15A TO247-3 в производствеTrench Field Stop1350V30A60A2.65V @ 15V, 15A357W420µJ (off)Standard156nC-/170ns600V, 15A, 10 Ohm, 15V
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-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247
SGH10N60RUFDTU
 ON Semiconductor IGBT 600V 16A 75W TO3P устарелый
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600V16A30A2.8V @ 15V, 10A75W141µJ (on), 215µJ (off)Standard30nC15ns/36ns300V, 10A, 20 Ohm, 15V60ns-55°C ~ 150°C (TJ)Through HoleTO-3P-3, SC-65-3TO-3P
NGTG15N120FL2WG
 ON Semiconductor IGBT 1200V 15A TO-247 в производствеTrench Field Stop1200V30A60A2.4V @ 15V, 15A294W1.2mJ (on), 370µJ (off)Standard109nC64ns/128ns600V, 15A, 10 Ohm, 15V
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-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
NGTD23T120F2WP
 ON Semiconductor IGBT TRENCH FIELD STOP 1200V DIE в производствеTrench Field Stop1200V
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120A2.2V @ 15V, 25A
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Standard
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-55°C ~ 175°C (TJ)SMD Поверхностный монтажDieDie
NGTD23T120F2SWK
 ON Semiconductor IGBT TRENCH FIELD STOP 1200V DIE в производствеTrench Field Stop1200V
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120A2.2V @ 15V, 25A
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Standard
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-55°C ~ 175°C (TJ)SMD Поверхностный монтажDieDie
FGH80N60FDTU
 ON Semiconductor IGBT 600V 80A 290W TO247 в производствеField Stop600V80A160A2.4V @ 15V, 40A290W1mJ (on), 520µJ (off)Standard120nC21ns/126ns400V, 40A, 10 Ohm, 15V36ns-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
SGH30N60RUFDTU
 ON Semiconductor IGBT 600V 48A 235W TO3P устарелый
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600V48A90A2.8V @ 15V, 30A235W919µJ (on), 814µJ (off)Standard85nC30ns/54ns300V, 30A, 7 Ohm, 15V95ns-55°C ~ 150°C (TJ)Through HoleTO-3P-3, SC-65-3TO-3PN
HGT1S12N60A4DS
 ON Semiconductor IGBT 600V 54A 167W D2PAK устарелый
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600V54A96A2.7V @ 15V, 12A167W55µJ (on), 50µJ (off)Standard78nC17ns/96ns390V, 12A, 10 Ohm, 15V30ns-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB
HGT1S10N120BNS
 ON Semiconductor IGBT 1200V 35A 298W TO263AB устарелыйNPT1200V35A80A2.7V @ 15V, 10A298W320µJ (on), 800µJ (off)Standard100nC23ns/165ns960V, 10A, 10 Ohm, 15V
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-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB
NGTB30N65IHL2WG
 ON Semiconductor IGBT 600V 70A 300W TO247 в производствеTrench Field Stop650V60A120A2.2V @ 15V, 30A300W200µJ (off)Standard135nC-/145ns400V, 30A, 10 Ohm, 15V430ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
FGL60N100BNTDTU
 ON Semiconductor IGBT 1000V 60A 180W TO264 устарелыйNPT and Trench1000V60A120A2.9V @ 15V, 60A180W
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Standard275nC140ns/630ns600V, 60A, 51 Ohm, 15V1.2µs-55°C ~ 150°C (TJ)Through HoleTO-264-3, TO-264AATO-264
FGH75T65UPD
 ON Semiconductor IGBT 650V 150A 375W TO-247AB устарелыйTrench Field Stop650V150A225A2.3V @ 15V, 75A375W2.85mJ (on), 1.2mJ (off)Standard385nC32ns/166ns400V, 75A, 3 Ohm, 15V85ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
NGTD28T65F2WP
 ON Semiconductor IGBT TRENCH FIELD STOP 650V DIE в производствеTrench Field Stop650V
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200A2V @ 15V, 75A
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Standard
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-55°C ~ 175°C (TJ)SMD Поверхностный монтажDieDie
NGTD28T65F2SWK
 ON Semiconductor IGBT TRENCH FIELD STOP 650V DIE в производствеTrench Field Stop650V
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200A2V @ 15V, 75A
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Standard
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-55°C ~ 175°C (TJ)SMD Поверхностный монтажDieDie
FGH75T65SQDT-F155
 ON Semiconductor 650V 75A FS4 TRENCH IGBT в производствеTrench Field Stop650V150A300A2.1V @ 15V, 75A375W300µJ (on), 70µJ (off)Standard128nC23ns/120ns400V, 18.8A, 4.7 Ohm, 15V76ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
NGTB25N120FL2WAG
 ON Semiconductor IGBT FIELD STOP 1.2KV TO247-4 в производствеField Stop1200V100A100A2.4V @ 15V, 25A385W990µJ (on), 660µJ (off)Standard181nC17ns/113ns600V, 50A, 10 Ohm, 15V136ns-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4L
NGTB50N65FL2WAG
 ON Semiconductor IGBT FIELD STOP 650V TO247-4 в производствеField Stop650V160A160A2V @ 15V, 50A417W420µJ (on), 550µJ (off)Standard215nC23ns/123ns400V, 50A, 10 Ohm, 15V94ns-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4L
FGA180N33ATTU
 ON Semiconductor IGBT 330V 180A 390W TO3P устарелыйTrench330V180A450A1.4V @ 15V, 40A390W
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Standard169nC
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-55°C ~ 150°C (TJ)Through HoleTO-3P-3, SC-65-3TO-3P
NGTB20N120IHTG
 ON Semiconductor IGBT 1200V 20A TO247 устарелый
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NGTD30T120F2WP
 ON Semiconductor IGBT TRENCH FIELD STOP 1200V DIE в производствеTrench Field Stop1200V
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200A2.4V @ 15V, 40A
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Standard
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-55°C ~ 175°C (TJ)SMD Поверхностный монтажDieDie
NGTB45N60SWG
 ON Semiconductor IGBT 600V 45A TO-247 устарелыйTrench Field Stop600V90A180A2.4V @ 15V, 45A250W550µJ (off)Standard134nC70ns/144ns400V, 45A, 10 Ohm, 15V376ns-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
NGTD30T120F2SWK
 ON Semiconductor IGBT TRENCH FIELD STOP 1200V DIE в производствеTrench Field Stop1200V
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200A2.4V @ 15V, 40A
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Standard
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-55°C ~ 175°C (TJ)SMD Поверхностный монтажDieDie
SGF80N60UFTU
 ON Semiconductor IGBT 600V 80A 110W TO3PF устарелый
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600V80A220A2.6V @ 15V, 40A110W570µJ (on), 590µJ (off)Standard175nC23ns/90ns300V, 40A, 5 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleSC-94TO-3PF
NGTB50N60SWG
 ON Semiconductor IGBT 600V 50A TO247 устарелыйTrench Field Stop600V100A200A2.6V @ 15V, 50A
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600µJ (off)Standard135nC70ns/144ns400V, 50A, 10 Ohm, 15V376ns-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
FGH40T100SMD-F155
 ON Semiconductor IGBT 1000V 80A 333W TO247-3 в производствеTrench Field Stop1000V80A120A2.3V @ 15V, 40A333W2.35mJ (on), 1.15mJ (off)Standard398nC29ns/285ns600V, 40A, 10 Ohm, 15V78ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
FGH75T65UPD-F155
 ON Semiconductor 650V75A FIELD STOP TRENCH IGBT устарелыйTrench Field Stop650V150A225A2.3V @ 15V, 75A375W3.68mJ (on), 1.6mJ (off)Standard68nC42ns/216ns400V, 75A, 3 Ohm, 15V85ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247
NGTB75N65FL2WAG
 ON Semiconductor IGBT FIELD STOP 650V TO247-4 в производствеField Stop650V200A200A2V @ 15V, 75A536W610µJ (on), 1.2mJ (off)Standard310nC23ns/157ns400V, 75A, 10 Ohm, 15V90ns-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4L
FGH75T65UPD-F085
 ON Semiconductor IGBT 650V 150A 375W TO-247AB устарелыйTrench Field Stop650V150A225A2.3V @ 15V, 75A375W2.85mJ (on), 1.2mJ (off)Standard578nC32ns/166ns400V, 75A, 3 Ohm, 15V85ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
NGTB50N60FL2WG
 ON Semiconductor IGBT 600V 50A TO247 в производствеTrench Field Stop600V100A200A2V @ 15V, 50A417W1.5mJ (on), 460µJ (off)Standard220nC100ns/237ns400V, 50A, 10 Ohm, 15V94ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
FGH75T65SQDNL4
 ON Semiconductor 650V/75 FAST IGBT FSIII T в производствеTrench Field Stop650V200A200A2.1V @ 15V, 75A375W1.25mJ (on), 1.26mJ (off)Standard152nC44ns/208ns400V, 75A, 10 Ohm, 15V134ns-55°C ~ 175°C (TJ)Through HoleTO-3P-3 Full PackTO-3PF-3
NGTB50N65FL2WG
 ON Semiconductor IGBT 600V 50A TO247 в производствеTrench Field Stop650V100A200A2V @ 15V, 50A417W1.5mJ (on), 460µJ (off)Standard220nC100ns/237ns400V, 50A, 10 Ohm, 15V94ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
NGTB50N60S1WG
 ON Semiconductor IGBT 50A 600V TO-247 в производствеTrench600V100A200A2V @ 15V, 50A417W1.5mJ (on), 460µJ (off)Standard220nC100ns/237ns400V, 50A, 10 Ohm, 15V94ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
FGH75N60SFTU
 ON Semiconductor IGBT 600V 150A 452W TO247 устарелыйField Stop600V150A225A2.9V @ 15V, 75A452W2.7mJ (on), 1mJ (off)Standard250nC26ns/138ns400V, 75A, 3 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
HGTG18N120BN
 ON Semiconductor IGBT 1200V 54A 390W TO247 устарелыйNPT1200V54A165A2.7V @ 15V, 18A390W800µJ (on), 1.8mJ (off)Standard165nC23ns/170ns960V, 18A, 3 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
NGTB50N60L2WG
 ON Semiconductor IGBT 600V 50A TO247 в производствеTrench Field Stop600V100A200A1.8V @ 15V, 50A500W800µJ (on), 600µJ (off)Standard310nC110ns/270ns400V, 50A, 10 Ohm, 15V67ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247
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