номер части Производитель / Марка Краткое описание Статус деталиТип IGBTНапряжение - Разрыв эмиттера коллектора (макс.)Ток - коллектор (Ic) (макс.)Текущий - коллектор импульсный (Icm)Vce (вкл.) (Макс.) @ Vge, IcМощность - макс.Энергия переключенияТип вводаВорота затвораTd (вкл. / Выкл.) При 25 ° CУсловия тестированияВремя обратного восстановления (trr)Рабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
ON Semiconductor IGBT 600V 16A 75W TO220 в производстве
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600V16A30A2.8V @ 15V, 10A75W141µJ (on), 215µJ (off)Standard30nC15ns/36ns300V, 10A, 20 Ohm, 15V60ns-55°C ~ 150°C (TJ)Through HoleTO-220-3TO-220-3
ON Semiconductor ECOSPARK 2 IGNITION IGBT в производстве
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400V26.9A
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1.2V @ 4V, 6A166W
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Logic24nC1µs/5.3µs
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-40°C ~ 175°C (TJ)Through HoleTO-220-3TO-220AB
ON Semiconductor IGBT 600V 40A 208W D2PAK в производствеField Stop600V40A60A2.8V @ 15V, 20A208W370µJ (on), 160µJ (off)Standard65nC13ns/90ns400V, 20A, 10 Ohm, 15V34ns-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD²PAK
ON Semiconductor IGBT 600V 40A 165W TO247 в производствеField Stop600V40A60A2.8V @ 15V, 20A165W370µJ (on), 160µJ (off)Standard65nC13ns/90ns400V, 20A, 10 Ohm, 15V34ns-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor 650V/40A RC IGBT в производствеTrench Field Stop650V80A160A1.7V @ 15V, 40A405W420µJ (off)Standard190nC
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400V, 40A, 10 Ohm, 15V
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-40°C ~ 175°C (TJ)Through HoleTO-3P-3, SC-65-3TO-3P
ON Semiconductor IGBT 600V 70A 300W TO247 в производствеTrench Field Stop600V70A120A2V @ 15V, 35A300W840µJ (on), 280µJ (off)Standard125nC72ns/132ns400V, 35A, 10 Ohm, 15V68ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 650V 70A 300W TO247 в производствеTrench Field Stop650V70A120A2V @ 15V, 35A300W840µJ (on), 280µJ (off)Standard125nC72ns/132ns400V, 35A, 10 Ohm, 15V68ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 45A 600V TO-247 в производствеTrench600V90A180A2.4V @ 15V, 45A300W1.25mJ (on), 530µJ (off)Standard125nC72ns/132ns400V, 45A, 10 Ohm, 15V70ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
ON Semiconductor IGBT 600V 54A 167W TO247 устарелый
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600V54A96A2.7V @ 15V, 12A167W55µJ (on), 50µJ (off)Standard78nC17ns/96ns390V, 12A, 10 Ohm, 15V30ns-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 600V 24A 104W TO220AB устарелый
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600V24A96A2.2V @ 15V, 15A104W380µJ (on), 900µJ (off)Standard48nC
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40ns-40°C ~ 150°C (TJ)Through HoleTO-220-3TO-220AB
ON Semiconductor IGBT 1200V 30A 333W TO247-3 в производствеTrench Field Stop1200V30A60A2.4V @ 15V, 15A333W1.15mJ (on), 460µJ (off)Standard128nC32ns/490ns600V, 15A, 34 Ohm, 15V72ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247 Long Leads
ON Semiconductor IGBT 45A 600V TO-247 в производствеTrench600V90A180A2.3V @ 15V, 45A300W360µJ (off)Standard135nC-/151ns400V, 45A, 10 Ohm, 15V498ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
ON Semiconductor 650V 60A FS4 TRENCH IGBT в производствеTrench Field Stop650V120A240A2.1V @ 15V, 60A333W227µJ (on), 100µJ (off)Standard79nC20.8ns/102ns400V, 15A, 4.7 Ohm, 15V34.6ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
ON Semiconductor IGBT 1200V 15A SOLAR/UPS TO247 в производствеTrench Field Stop1200V30A60A2.4V @ 15V, 15A294W1.2mJ (on), 370µJ (off)Standard109nC64ns/132ns600V, 15A, 10 Ohm, 15V110ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
ON Semiconductor IGBT 650V 80A 268W TO-3PN в производствеTrench Field Stop650V80A120A2.1V @ 15V, 40A268W1.01mJ (on), 297µJ (off)Standard72.2nC19.2ns/65.6ns400V, 40A, 6 Ohm, 15V31.8ns-55°C ~ 175°C (TJ)Through HoleTO-3P-3, SC-65-3TO-3PN
ON Semiconductor IGBT 600V 120A 378W TO247 в производствеField Stop600V120A180A2.9V @ 15V, 60A378W1.79mJ (on), 670µJ (off)Standard198nC22ns/134ns400V, 60A, 5 Ohm, 15V47ns-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 650V 80A 268W TO-247-3 в производствеField Stop650V80A120A1.81V @ 15V, 40A268W1.22mJ (on), 440µJ (off)Standard68nC18ns/64ns400V, 40A, 6 Ohm, 15V101ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
ON Semiconductor IGBT 600V 60A 250W TO247 в производствеTrench Field Stop600V60A120A1.9V @ 15V, 30A250W700µJ (on), 280µJ (off)Standard170nC83ns/170ns400V, 30A, 10 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 650V 60A 250W TO247-3 устарелыйTrench Field Stop650V60A90A2.3V @ 15V, 30A250W760µJ (on), 400µJ (off)Standard155nC22ns/139ns400V, 30A, 8 Ohm, 15V43ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247 Long Leads
ON Semiconductor 650V FS GEN3 TRENCH IGBT в производствеTrench Field Stop700V80A120A2.15V @ 15V, 40A268W1.15mJ (on), 271µJ (off)Standard69nC22ns/66ns400V, 40A, 6 Ohm, 15V37ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
ON Semiconductor IGBT 1300V 60A 348W TO3P в производствеTrench Field Stop1300V60A150A2.3V @ 15V, 30A348W
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Standard78nC
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-55°C ~ 175°C (TJ)Through HoleTO-3P-3, SC-65-3TO-3PN
ON Semiconductor IGBT 1200V 60A 384W TO247 в производствеTrench Field Stop1200V60A120A2.5V @ 15V, 30A384W700µJ (off)Standard225nC-/230ns600V, 30A, 10 Ohm, 15V
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-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 1200V 25A TO247-3 в производствеField Stop1200V50A100A2.4V @ 15V, 25A385W1.95mJ (on), 600µJ (off)Standard178nC87ns/179ns600V, 25A, 10 Ohm, 15V154ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
ON Semiconductor IGBT 600V 80A 366W TO247 в производствеTrench Field Stop600V80A160A2V @ 15V, 40A366W970µJ (on), 440µJ (off)Standard170nC84ns/177ns400V, 40A, 10 Ohm, 15V72ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 600V 60A 480W TO3PN в производствеTrench Field Stop600V60A90A1.4V @ 15V, 30A480W1.1mJ (on), 21mJ (off)Standard225nC18ns/250ns400V, 30A, 6.8 Ohm, 15V35ns-55°C ~ 150°C (TJ)Through HoleTO-3P-3, SC-65-3TO-3P
ON Semiconductor IGBT 600V 40A 100W TO3PF устарелый
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600V40A160A3V @ 15V, 20A100W470µJ (on), 130µJ (off)Standard77nC15ns/65ns300V, 20A, 10 Ohm, 15V95ns-55°C ~ 150°C (TJ)Through HoleSC-94TO-3PF
ON Semiconductor IGBT 650V 80A 366W TO247 в производствеTrench Field Stop650V80A160A2V @ 15V, 40A366W970µJ (on), 440µJ (off)Standard170nC84ns/177ns400V, 40A, 10 Ohm, 15V72ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 1200V 80A 555W TO247-3 в производствеTrench Field Stop1200V80A160A2.4V @ 15V, 40A555W2.7mJ (on), 1.1mJ (off)Standard370nC40ns/475ns600V, 40A, 10 Ohm, 15V65ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 600V 120A 298W TO247 в производствеField Stop600V120A180A2.4V @ 15V, 60A298W1.81mJ (on), 810µJ (off)Standard188nC23ns/130ns400V, 60A, 5 Ohm, 15V47ns-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 75A 600V TO-247 устарелый
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600V100A200A2V @ 15V, 75A595W1.5mJ (on), 1mJ (off)Standard310nC110ns/270ns400V, 75A, 10 Ohm, 15V80ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
ON Semiconductor IGBT 600V 120A 298W TO247 устарелыйTrench Field Stop600V120A240A2.5V @ 15V, 60A298W1.41mJ (on), 600µJ (off)Standard173nC87ns/180ns400V, 60A, 10 Ohm, 15V76ns-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor 650V FS4 TRENCH IGBT в производствеTrench Field Stop650V150A300A2.1V @ 15V, 75A
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307µJ (on), 266µJ (off)Standard128nC44ns/276ns400V, 18.8A, 15 Ohm, 15V76ns-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247
ON Semiconductor IGBT 650V 150A 455W TO-247 в производствеTrench Field Stop650V150A225A2.1V @ 15V, 75A455W3mJ (on), 750µJ (off)Standard123nC28ns/86ns400V, 75A, 3 Ohm, 15V76ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 600V 75A TO247 в производствеTrench Field Stop600V100A200A2V @ 15V, 75A595W1.5mJ (on), 1mJ (off)Standard310nC110ns/270ns400V, 75A, 10 Ohm, 15V80ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 1200V 80A TO-247 в производствеTrench Field Stop1200V80A160A2.4V @ 15V, 40A882W2.7mJ (on), 1.1mJ (off)Standard370nC40ns/475ns600V, 40A, 10 Ohm, 15V65ns-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor IGBT 400V 150A 8ECH в производстве
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400V
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150A5.4V @ 2.5V, 100A
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Standard
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150°C (TJ)SMD Поверхностный монтаж8-SMD, Flat LeadSOT-28FL/ECH8
ON Semiconductor IGBT 400V ECH8 устарелый
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400V
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150A7V @ 2.5V, 100A
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Standard
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150°C (TJ)SMD Поверхностный монтаж8-SMD, Flat Lead8-ECH
ON Semiconductor IGBT 600V 23A 100W TO220 устарелый
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600V23A92A2.6V @ 15V, 12A100W115µJ (on), 135µJ (off)Standard49nC17ns/60ns300V, 12A, 23 Ohm, 15V60ns-55°C ~ 150°C (TJ)Through HoleTO-220-3TO-220-3
ON Semiconductor IGBT 600V 23A 73W TO220F устарелый
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600V23A92A2.6V @ 15V, 12A73W115µJ (on), 135µJ (off)Standard49nC17ns/60ns300V, 12A, 23 Ohm, 15V60ns-55°C ~ 150°C (TJ)Through HoleTO-220-3 Full PackTO-220F
ON Semiconductor IGBT 430V 21A 150W TO263AB в производстве
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430V21A
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1.6V @ 4V, 6A150W
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Logic17nC-/4.8µs300V, 1 kOhm, 5V
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-40°C ~ 175°C (TJ)SMD Поверхностный монтажTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB
ON Semiconductor IGBT 300V 46.8W TO220F устарелыйTrench300V
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120A1.5V @ 15V, 15A46.8W
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Standard97nC
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-55°C ~ 150°C (TJ)Through HoleTO-220-3 Full PackTO-220F
ON Semiconductor IGBT 600V 13A 60W TO220 устарелый
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600V13A52A2.6V @ 15V, 6.5A60W85µJ (on), 95µJ (off)Standard25nC20ns/70ns300V, 6.5A, 50 Ohm, 15V55ns-55°C ~ 150°C (TJ)Through HoleTO-220-3TO-220-3
ON Semiconductor IGBT 600V 17A 70W TO220AB устарелый
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600V17A40A2.7V @ 15V, 3A70W37µJ (on), 25µJ (off)Standard21nC6ns/73ns390V, 3A, 50 Ohm, 15V29ns-55°C ~ 150°C (TJ)Through HoleTO-220-3TO-220AB
ON Semiconductor ECOSPARK 2 IGNITION IGBT в производстве
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400V41A
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1.25V @ 4V, 6A150W
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Logic21nC900ns/4.8µs
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-55°C ~ 175°C (TJ)Through HoleTO-220-3TO-220AB
ON Semiconductor N-CH / 7A 600V SMPS 1 IGBT в производстве
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600V34A56A2.7V @ 15V, 7A125W55µJ (on), 150µJ (off)Standard60nC11ns/100ns390V, 7A, 25 Ohm, 15V
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-55°C ~ 150°C (TJ)Through HoleTO-220-3TO-220-3
ON Semiconductor IGBT 600V 40A 208W D2PAK в производствеField Stop600V40A60A2.8V @ 15V, 20A208W370µJ (on), 160µJ (off)Standard65nC13ns/90ns400V, 20A, 10 Ohm, 15V
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-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD²PAK
ON Semiconductor IGBT 1200V 21A 167W TO220AB устарелыйNPT1200V21A40A2.7V @ 15V, 5A167W450µJ (on), 390µJ (off)Standard53nC22ns/160ns960V, 5A, 25 Ohm, 15V65ns-55°C ~ 150°C (TJ)Through HoleTO-220-3TO-220AB
ON Semiconductor 650V 40A FS4 SA IGBT в производствеTrench Field Stop650V80A160A2.1V @ 15V, 40A94W132µJ (on), 62µJ (off)Standard75nC17.8ns/81.6ns400V, 10A, 6 Ohm, 15V274ns-55°C ~ 175°C (TJ)Through HoleTO-3P-3 Full PackTO-3PF-3
ON Semiconductor IGBT TRENCH FIELD STOP 650V DIE в производствеTrench Field Stop650V
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120A2.2V @ 15V, 30A
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Standard
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-55°C ~ 175°C (TJ)SMD Поверхностный монтажDieDie
ON Semiconductor IGBT TRENCH FIELD STOP 650V DIE в производствеTrench Field Stop650V
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120A2V @ 15V, 35A
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Standard
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-55°C ~ 175°C (TJ)SMD Поверхностный монтажDieDie
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