Taiwan Semiconductor агент по продажам - Диоды - Мостовые выпрямители - TS6P06G D2G TS6P07G D2G - ICCHIP

номер части	Производитель / Марка	Краткое описание	Статус детали	Тип диода	Технологии	Напряжение - Реверс пика (макс.)	Текущий - средний отрегулированный (Io)	Напряжение - Вперед (Vf) (Макс.) @ Если	Текущий - обратный утечек @ Vr	Рабочая Температура	Тип монтажа	Упаковка / чехол	Пакет устройств поставщика
TS6P06G D2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 800V 6A TS-6P	в производстве	Single Phase	Standard	800V	6A	1.1V @ 6A	10µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS6P07G D2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 6A TS-6P	в производстве	Single Phase	Standard	1kV	6A	1.1V @ 6A	10µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
GBU605HD2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 600V 6A GBU	в производстве	Single Phase	Standard	600V	6A	1.1V @ 6A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU606HD2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 800V 6A GBU	в производстве	Single Phase	Standard	800V	6A	1.1V @ 6A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU607HD2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 6A GBU	в производстве	Single Phase	Standard	1kV	6A	1.1V @ 6A	5µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
TS10KL100HD3G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 10A KBJL	в производстве	Single Phase	Standard	1kV	10A	1V @ 5A	5µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBJL	KBJL
TS10KL60HD3G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 600V 10A KBJL	в производстве	Single Phase	Standard	600V	10A	1V @ 5A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBJL	KBJL
TS10KL80HD3G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 800V 10A KBJL	в производстве	Single Phase	Standard	800V	10A	1V @ 5A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBJL	KBJL
GBU806HD2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 800V 8A GBU	в производстве	Single Phase	Standard	800V	8A	1.1V @ 8A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU807HD2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 8A GBU	в производстве	Single Phase	Standard	1kV	8A	1.1V @ 8A	5µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU801 D2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 50V 8A GBU	в производстве	Single Phase	Standard	50V	8A	1.1V @ 8A	5µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU802 D2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 100V 8A GBU	в производстве	Single Phase	Standard	100V	8A	1.1V @ 8A	5µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU803 D2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 200V 8A GBU	в производстве	Single Phase	Standard	200V	8A	1.1V @ 8A	5µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU804 D2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 400V 8A GBU	в производстве	Single Phase	Standard	400V	8A	1.1V @ 8A	5µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
TSS4B01G C2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 50V 4A TS4B	в производстве	Single Phase	Standard	50V	4A	980mV @ 4A	5µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-4B	TS4B
TSS4B01G D2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 50V 4A TS4B	в производстве	Single Phase	Standard	50V	4A	980mV @ 4A	5µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-4B	TS4B
TSS4B02G C2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 100V 4A TS4B	в производстве	Single Phase	Standard	100V	4A	980mV @ 4A	5µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-4B	TS4B
TSS4B02G D2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 100V 4A TS4B	в производстве	Single Phase	Standard	100V	4A	980mV @ 4A	5µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-4B	TS4B
TS6P01GHC2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 50V 6A TS-6P	в производстве	Single Phase	Standard	50V	6A	1.1V @ 6A	10µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS6P01GHD2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 50V 6A TS-6P	в производстве	Single Phase	Standard	50V	6A	1.1V @ 6A	10µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS6P02GHC2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 100V 6A TS-6P	в производстве	Single Phase	Standard	100V	6A	1.1V @ 6A	10µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS6P02GHD2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 100V 6A TS-6P	в производстве	Single Phase	Standard	100V	6A	1.1V @ 6A	10µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS6P03GHC2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 200V 6A TS-6P	в производстве	Single Phase	Standard	200V	6A	1.1V @ 6A	10µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS6P03GHD2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 200V 6A TS-6P	в производстве	Single Phase	Standard	200V	6A	1.1V @ 6A	10µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS6P04GHC2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 400V 6A TS-6P	в производстве	Single Phase	Standard	400V	6A	1.1V @ 6A	10µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS6P04GHD2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 400V 6A TS-6P	в производстве	Single Phase	Standard	400V	6A	1.1V @ 6A	10µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS6P05GHC2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 600V 6A TS-6P	в производстве	Single Phase	Standard	600V	6A	1.1V @ 6A	10µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS6P05GHD2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 600V 6A TS-6P	в производстве	Single Phase	Standard	600V	6A	1.1V @ 6A	10µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS6P06GHC2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 800V 6A TS-6P	в производстве	Single Phase	Standard	800V	6A	1.1V @ 6A	10µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS6P06GHD2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 800V 6A TS-6P	в производстве	Single Phase	Standard	800V	6A	1.1V @ 6A	10µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS6P07GHC2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 6A TS-6P	в производстве	Single Phase	Standard	1kV	6A	1.1V @ 6A	10µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS6P07GHD2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 6A TS-6P	в производстве	Single Phase	Standard	1kV	6A	1.1V @ 6A	10µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TSS4B04G C2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 400V 4A TS4B	в производстве	Single Phase	Standard	400V	4A	1.3V @ 4A	5µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-4B	TS4B
TSS4B04G D2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 400V 4A TS4B	в производстве	Single Phase	Standard	400V	4A	1.3V @ 4A	5µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-4B	TS4B
GBU801HD2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 50V 8A GBU	в производстве	Single Phase	Standard	50V	8A	1.1V @ 8A	5µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU802HD2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 100V 8A GBU	в производстве	Single Phase	Standard	100V	8A	1.1V @ 8A	5µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU803HD2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 200V 8A GBU	в производстве	Single Phase	Standard	200V	8A	1.1V @ 8A	5µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU804HD2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 400V 8A GBU	в производстве	Single Phase	Standard	400V	8A	1.1V @ 8A	5µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU805HD2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 600V 8A GBU	в производстве	Single Phase	Standard	600V	8A	1.1V @ 8A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
TS8P01G C2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 50V 8A TS-6P	в производстве	Single Phase	Standard	50V	8A	1.1V @ 8A	10µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS8P01G D2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 50V 8A TS-6P	в производстве	Single Phase	Standard	50V	8A	1.1V @ 8A	10µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS8P02G C2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 100V 8A TS-6P	в производстве	Single Phase	Standard	100V	8A	1.1V @ 8A	10µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS8P02G D2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 100V 8A TS-6P	в производстве	Single Phase	Standard	100V	8A	1.1V @ 8A	10µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS8P03G C2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 200V 8A TS-6P	в производстве	Single Phase	Standard	200V	8A	1.1V @ 8A	10µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS8P03G D2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 200V 8A TS-6P	в производстве	Single Phase	Standard	200V	8A	1.1V @ 8A	10µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS8P04G C2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 400V 8A TS-6P	в производстве	Single Phase	Standard	400V	8A	1.1V @ 8A	10µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS8P04G D2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 400V 8A TS-6P	в производстве	Single Phase	Standard	400V	8A	1.1V @ 8A	10µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS8P05G C2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 600V 8A TS-6P	в производстве	Single Phase	Standard	600V	8A	1.1V @ 8A	10µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS8P05G D2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 600V 8A TS-6P	в производстве	Single Phase	Standard	600V	8A	1.1V @ 8A	10µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS8P06G C2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 800V 8A TS-6P	в производстве	Single Phase	Standard	800V	8A	1.1V @ 8A	10µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P

Производители для Диоды - Мостовые выпрямители