Taiwan Semiconductor агент по продажам - Диоды - Мостовые выпрямители - TS25P05GHC2G TS25P05GHD2G - ICCHIP

номер части	Производитель / Марка	Краткое описание	Статус детали	Тип диода	Технологии	Напряжение - Реверс пика (макс.)	Текущий - средний отрегулированный (Io)	Напряжение - Вперед (Vf) (Макс.) @ Если	Текущий - обратный утечек @ Vr	Рабочая Температура	Тип монтажа	Упаковка / чехол	Пакет устройств поставщика
TS25P05GHC2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 600V 25A TS-6P	в производстве	Single Phase	Standard	600V	25A	1.1V @ 25A	10µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS25P05GHD2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 600V 25A TS-6P	в производстве	Single Phase	Standard	600V	25A	1.1V @ 25A	10µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS25P06GHC2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 800V 25A TS-6P	в производстве	Single Phase	Standard	800V	25A	1.1V @ 25A	10µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS25P07GHC2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 25A TS-6P	в производстве	Single Phase	Standard	1kV	25A	1.1V @ 25A	10µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS25P07GHD2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 25A TS-6P	в производстве	Single Phase	Standard	1kV	25A	1.1V @ 25A	10µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TSS4B03G C2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 200V 4A TS4B	в производстве	Single Phase	Standard	200V	4A	980mV @ 4A	5µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-4B	TS4B
TS35P05GHC2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 600V 35A TS-6P	в производстве	Single Phase	Standard	600V	35A	1.1V @ 17.5A	10µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS35P05GHD2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 600V 35A TS-6P	в производстве	Single Phase	Standard	600V	35A	1.1V @ 17.5A	10µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS35P06GHC2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 800V 35A TS-6P	в производстве	Single Phase	Standard	800V	35A	1.1V @ 17.5A	10µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS35P06GHD2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 800V 35A TS-6P	в производстве	Single Phase	Standard	800V	35A	1.1V @ 17.5A	10µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS35P07GHC2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 35A TS-6P	в производстве	Single Phase	Standard	1kV	35A	1.1V @ 17.5A	10µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS35P07GHD2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 35A TS-6P	в производстве	Single Phase	Standard	1kV	35A	1.1V @ 17.5A	10µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS40P05GHC2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 600V 40A TS-6P	в производстве	Single Phase	Standard	600V	40A	1.1V @ 20A	10µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS40P05GHD2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 600V 40A TS-6P	в производстве	Single Phase	Standard	600V	40A	1.1V @ 20A	10µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS40P06GHC2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 800V 40A TS-6P	в производстве	Single Phase	Standard	800V	40A	1.1V @ 20A	10µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS40P06GHD2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 800V 40A TS-6P	в производстве	Single Phase	Standard	800V	40A	1.1V @ 20A	10µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS40P07GHC2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 40A TS-6P	в производстве	Single Phase	Standard	1kV	40A	1.1V @ 20A	10µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS40P07GHD2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 40A TS-6P	в производстве	Single Phase	Standard	1kV	40A	1.1V @ 20A	10µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS50P05G C2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 600V 50A TS-6P	в производстве	Single Phase	Standard	600V	50A	1.1V @ 25A	10µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS50P05G D2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 600V 50A TS-6P	в производстве	Single Phase	Standard	600V	50A	1.1V @ 25A	10µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS50P06G C2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 800V 50A TS-6P	в производстве	Single Phase	Standard	800V	50A	1.1V @ 25A	10µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS50P06G D2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 800V 50A TS-6P	в производстве	Single Phase	Standard	800V	50A	1.1V @ 25A	10µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS50P07G C2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 50A TS-6P	в производстве	Single Phase	Standard	1kV	50A	1.1V @ 25A	10µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS25P06GHD2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 800V 25A TS-6P	в производстве	Single Phase	Standard	800V	25A	1.1V @ 25A	10µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS50P05GHC2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 600V 50A TS-6P	в производстве	Single Phase	Standard	600V	50A	1.1V @ 25A	10µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS50P05GHD2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 600V 50A TS-6P	в производстве	Single Phase	Standard	600V	50A	1.1V @ 25A	10µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS50P06GHC2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 800V 50A TS-6P	в производстве	Single Phase	Standard	800V	50A	1.1V @ 25A	10µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS50P06GHD2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 800V 50A TS-6P	в производстве	Single Phase	Standard	800V	50A	1.1V @ 25A	10µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS50P07GHD2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 50A TS-6P	в производстве	Single Phase	Standard	1kV	50A	1.1V @ 25A	10µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS50P07GHC2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 50A TS-6P	в производстве	Single Phase	Standard	1kV	50A	1.1V @ 25A	10µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
GBU15L06 D2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 800V 15A GBU	в производстве	Single Phase	Standard	800V	15A	960mV @ 7.5A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
TS15PL05G C2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 600V 15A TS-6P	в производстве	Single Phase	Standard	600V	15A	900mV @ 7.5A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS15PL05G D2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 600V 15A TS-6P	в производстве	Single Phase	Standard	600V	15A	900mV @ 7.5A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS15PL06G C2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 800V 15A TS-6P	в производстве	Single Phase	Standard	800V	15A	930mV @ 7.5A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS15PL06G D2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 800V 15A TS-6P	в производстве	Single Phase	Standard	800V	15A	930mV @ 7.5A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
GBU15L05HD2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 600V 15A GBU	в производстве	Single Phase	Standard	600V	15A	900mV @ 7.5A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU15L06HD2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 600V 15A GBU	в производстве	Single Phase	Standard	600V	15A	960mV @ 7.5A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
TS15PL05GHC2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 600V 15A TS-6P	в производстве	Single Phase	Standard	600V	15A	900mV @ 7.5A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS15PL05GHD2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 600V 15A TS-6P	в производстве	Single Phase	Standard	600V	15A	900mV @ 7.5A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS15PL06GHC2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 800V 15A TS-6P	в производстве	Single Phase	Standard	800V	15A	930mV @ 7.5A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS15PL06GHD2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 800V 15A TS-6P	в производстве	Single Phase	Standard	800V	15A	930mV @ 7.5A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
GBPC15005 T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 50V 15A GBPC	в производстве	Single Phase	Standard	50V	15A	1.1V @ 7.5A	5µA @ 50V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC	GBPC
GBPC15005M T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 50V 15A GBPC-M	в производстве	Single Phase	Standard	50V	15A	1.1V @ 7.5A	5µA @ 50V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC-M	GBPC-M
GBPC15005W T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 50V 15A GBPC-W	в производстве	Single Phase	Standard	50V	15A	1.1V @ 7.5A	5µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC1501 T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 100V 15A GBPC	в производстве	Single Phase	Standard	100V	15A	1.1V @ 7.5A	5µA @ 100V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC	GBPC
GBPC1501M T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 100V 15A GBPC-M	в производстве	Single Phase	Standard	100V	15A	1.1V @ 7.5A	5µA @ 100V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC-M	GBPC-M
GBPC1501W T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 100V 15A GBPC-W	в производстве	Single Phase	Standard	100V	15A	1.1V @ 7.5A	5µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC1502 T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 200V 15A GBPC	в производстве	Single Phase	Standard	200V	15A	1.1V @ 7.5A	5µA @ 200V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC	GBPC
GBPC1502M T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 200V 15A GBPC-M	в производстве	Single Phase	Standard	200V	15A	1.1V @ 7.5A	5µA @ 200V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC-M	GBPC-M
GBPC1502W T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 200V 15A GBPC-W	в производстве	Single Phase	Standard	200V	15A	1.1V @ 7.5A	5µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W

Производители для Диоды - Мостовые выпрямители