Vishay агент по продажам - Диоды - Мостовые выпрямители - BU1006A-E3/51 BU1008A-E3/51 - ICCHIP

номер части	Производитель / Марка	Краткое описание	Статус детали	Тип диода	Технологии	Напряжение - Реверс пика (макс.)	Текущий - средний отрегулированный (Io)	Напряжение - Вперед (Vf) (Макс.) @ Если	Текущий - обратный утечек @ Vr	Рабочая Температура	Тип монтажа	Упаковка / чехол	Пакет устройств поставщика
BU1006A-E3/51	Vishay Semiconductor Diodes Division	RECTIFIER BRIDGE 600V 10A BU	в производстве	Single Phase	Standard	600V	3A	1.1V @ 5A	10µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, BU	isoCINK+™ BU
BU1008A-E3/51	Vishay Semiconductor Diodes Division	RECTIFIER BRIDGE 800V 10A BU	в производстве	Single Phase	Standard	800V	3A	1.1V @ 5A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, BU	isoCINK+™ BU
GBU4K-E3/51	Vishay Semiconductor Diodes Division	DIODE GPP 1PH 4A 800V GPP GBU	в производстве	Single Phase	Standard	800V	3A	1V @ 4A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU4B-E3/45	Vishay Semiconductor Diodes Division	DIODE GPP 1PH 4A 100V GPP GBU	в производстве	Single Phase	Standard	100V	3A	1V @ 4A	5µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU4G-E3/45	Vishay Semiconductor Diodes Division	DIODE GPP 1PH 4A 400V GPP GBU	в производстве	Single Phase	Standard	400V	3A	1V @ 4A	5µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU4M-E3/45	Vishay Semiconductor Diodes Division	DIODE GPP 1PH 4A 1000V GPP GBU	в производстве	Single Phase	Standard	1kV	3A	1V @ 4A	5µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
BU1010-E3/51	Vishay Semiconductor Diodes Division	RECTIFIER BRIDGE 1000V 10A BU	в производстве	Single Phase	Standard	1kV	3.2A	1.05V @ 5A	5µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, BU	isoCINK+™ BU
GBU4A-M3/45	Vishay Semiconductor Diodes Division	DIODE 1PH 4A 50V	в производстве	Single Phase	Standard	50V	3A	1V @ 4A	5µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU4A-M3/51	Vishay Semiconductor Diodes Division	DIODE 1PH 4A 50V	в производстве	Single Phase	Standard	50V	3A	1V @ 4A	5µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU4B-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 4A 100V GBU	в производстве	Single Phase	Standard	100V	4A	1V @ 4A	5µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU4D-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 4A 200V GBU	в производстве	Single Phase	Standard	200V	4A	1V @ 4A	5µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU4G-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 4A 400V GBU	в производстве	Single Phase	Standard	400V	4A	1V @ 4A	5µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU4J-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 4A 600V GBU	в производстве	Single Phase	Standard	600V	4A	1V @ 4A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU4K-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 4A 800V GBU	в производстве	Single Phase	Standard	800V	4A	1V @ 4A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU4M-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 4A 1000V GBU	в производстве	Single Phase	Standard	1kV	4A	1V @ 4A	5µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU4B-M3/45	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 4A 100V GBU	в производстве	Single Phase	Standard	100V	4A	1V @ 4A	5µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU4D-M3/45	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 4A 200V GBU	в производстве	Single Phase	Standard	200V	4A	1V @ 4A	5µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU4G-M3/45	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 4A 400V GBU	в производстве	Single Phase	Standard	400V	4A	1V @ 4A	5µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU4J-M3/45	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 4A 600V GBU	в производстве	Single Phase	Standard	600V	4A	1V @ 4A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU4K-M3/45	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 4A 800V GBU	в производстве	Single Phase	Standard	800V	4A	1V @ 4A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU4M-M3/45	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 4A 1000V GBU	в производстве	Single Phase	Standard	1kV	4A	1V @ 4A	5µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
VS-2KBB60	Vishay Semiconductor Diodes Division	RECTIFIER BRIDGE 600V 1.9A D-37	в производстве	Single Phase	Standard	600V	1.9A	1.1V @ 1.9A	10µA @ 600V	-40°C ~ 150°C (TJ)	Through Hole	4-SIP, 2KBB	2KBB
GBU8M-E3/51	Vishay Semiconductor Diodes Division	DIODE GPP 8A 1000V GPP INLINE	в производстве	Single Phase	Standard	1kV	3.9A	1V @ 8A	5µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU6A-M3/51	Vishay Semiconductor Diodes Division	DIODE 6A 50V INLINE 4SIP	в производстве	Single Phase	Standard	50V	3.8A	1V @ 6A	5µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU8A-M3/51	Vishay Semiconductor Diodes Division	DIODE 8A 50V INLINE	в производстве	Single Phase	Standard	50V	3.9A	1V @ 8A	5µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU6B-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 6A 100V GBU	в производстве	Single Phase	Standard	100V	6A	1V @ 6A	5µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU6D-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 6A 200V GBU	в производстве	Single Phase	Standard	200V	6A	1V @ 3A	5µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU6G-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 6A 400V GBU	в производстве	Single Phase	Standard	400V	6A	1V @ 6A	5µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU6J-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 6A 600V GBU	в производстве	Single Phase	Standard	600V	6A	1V @ 6A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU6K-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 6A 800V GBU	в производстве	Single Phase	Standard	800V	6A	1V @ 6A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU6M-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 6A 1000V GBU	в производстве	Single Phase	Standard	1kV	6A	1V @ 6A	5µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU8B-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 8A 100V GBU	в производстве	Single Phase	Standard	100V	8A	1V @ 8A	5µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU8D-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 8A 200V GBU	в производстве	Single Phase	Standard	200V	8A	1V @ 8A	5µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU8G-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 8A 400V GBU	в производстве	Single Phase	Standard	400V	8A	1V @ 8A	5µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU8J-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 8A 600V GBU	в производстве	Single Phase	Standard	600V	8A	1V @ 8A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
BU1006-E3/51	Vishay Semiconductor Diodes Division	RECTIFIER BRIDGE 600V 10A BU	в производстве	Single Phase	Standard	600V	3.2A	1.05V @ 5A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, BU	isoCINK+™ BU
BU1008-E3/51	Vishay Semiconductor Diodes Division	RECTIFIER BRIDGE 800V 10A BU	в производстве	Single Phase	Standard	800V	3.2A	1.05V @ 5A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, BU	isoCINK+™ BU
BU1210-E3/51	Vishay Semiconductor Diodes Division	RECTIFIER BRIDGE 1000V 12A BU	в производстве	Single Phase	Standard	1kV	3.4A	1.05V @ 6A	5µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, BU	isoCINK+™ BU
GSIB6A20-E3/45	Vishay Semiconductor Diodes Division	BRIDGE RECT 200V 2.8A GSIB-5S	в производстве	Single Phase	Standard	200V	2.8A	1V @ 3A	10µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GSIB-5S	GSIB-5S
GBU6C-E3/51	Vishay Semiconductor Diodes Division	DIODE GPP 6A 150V GPP INLINE GBU	в производстве	Single Phase	Standard	150V	3.8A	1V @ 6A	5µA @ 150V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU6D-E3/51	Vishay Semiconductor Diodes Division	DIODE GPP 6A 200V GPP INLINE GBU	в производстве	Single Phase	Standard	200V	3.8A	1V @ 3A	5µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU6G-E3/51	Vishay Semiconductor Diodes Division	DIODE GPP 6A 400V GPP INLINE GBU	в производстве	Single Phase	Standard	400V	3.8A	1V @ 6A	5µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU6J-E3/51	Vishay Semiconductor Diodes Division	DIODE GPP 6A 600V GPP INLINE GBU	в производстве	Single Phase	Standard	600V	3.8A	1V @ 6A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU8K-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 8A 800V GBU	в производстве	Single Phase	Standard	800V	8A	1V @ 8A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU8M-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 8A 1000V GBU	в производстве	Single Phase	Standard	1kV	8A	1V @ 8A	5µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
BU1206-E3/51	Vishay Semiconductor Diodes Division	RECTIFIER BRIDGE 600V 12A BU	в производстве	Single Phase	Standard	600V	3.4A	1.05V @ 6A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, BU	isoCINK+™ BU
BU1006A-M3/51	Vishay Semiconductor Diodes Division	RECTIFIER BRIDGE 600V 10A BU	в производстве	Single Phase	Standard	600V	10A	1.1V @ 5A	10µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, BU	isoCINK+™ BU
BU1008A-M3/51	Vishay Semiconductor Diodes Division	RECTIFIER BRIDGE 800V 10A BU	в производстве	Single Phase	Standard	800V	10A	1.1V @ 5A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, BU	isoCINK+™ BU
BU1010A-M3/51	Vishay Semiconductor Diodes Division	RECTIFIER BRIDGE 1000V 10A BU	в производстве	Single Phase	Standard	1kV	10A	1.1V @ 5A	5µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, BU	isoCINK+™ BU
G5SBA20-M3/45	Vishay Semiconductor Diodes Division	DIODE 1PH 6A 200V	в производстве	Single Phase	Standard	200V	2.8A	1.05V @ 3A	5µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU

Производители для Диоды - Мостовые выпрямители