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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 1.5A 200V WOG |
в производстве | Single Phase | Standard | 200V | 1.5A | 1V @ 1A | 5µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-Circular, WOG | WOG |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 1.5A 800V WOG |
в производстве | Single Phase | Standard | 800V | 1.5A | 1V @ 1A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-Circular, WOG | WOG |
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Vishay Semiconductor Diodes Division |
DIODE BRIDGE 2A 100V 1PH WOG |
в производстве | Single Phase | Standard | 100V | 2A | 1.1V @ 2A | 5µA @ 100V | -55°C ~ 150°C (TJ) | Through Hole | 4-Circular, WOG | WOG |
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Vishay Semiconductor Diodes Division |
DIODE BRIDGE 2A 200V 1PH WOG |
в производстве | Single Phase | Standard | 200V | 2A | 1.1V @ 2A | 5µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-Circular, WOG | WOG |
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Vishay Semiconductor Diodes Division |
DIODE BRIDGE 1.5A 600V WOG |
в производстве | Single Phase | Standard | 600V | 1.5A | 1V @ 1.5A | 10µA @ 600V | -40°C ~ 125°C (TJ) | Through Hole | 4-Circular, WOG | WOG |
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Vishay Semiconductor Diodes Division |
DIODE BRIDGE 1.5A 125V WOG |
в производстве | Single Phase | Standard | 125V | 1.5A | 1V @ 1A | 10µA @ 125V | -40°C ~ 125°C (TJ) | Through Hole | 4-Circular, WOG | WOG |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1A 1000V 4SMD |
в производстве | Single Phase | Standard | 1kV | 1A | 1.1V @ 1A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-SMD, Gull Wing | DFS |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 4A 1000V KBL |
в производстве | Single Phase | Standard | 1kV | 4A | 1.1V @ 4A | 5µA @ 1000V | -50°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBL | KBL |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 4A 200V KBL |
в производстве | Single Phase | Standard | 200V | 4A | 1.1V @ 4A | 5µA @ 200V | -50°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBL | KBL |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 4A 800V KBL |
в производстве | Single Phase | Standard | 800V | 4A | 1.1V @ 4A | 5µA @ 800V | -50°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBL | KBL |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 4A 100V KBL |
в производстве | Single Phase | Standard | 100V | 4A | 1.1V @ 4A | 5µA @ 100V | -50°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBL | KBL |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 4A 600V KBL |
в производстве | Single Phase | Standard | 600V | 4A | 1.1V @ 4A | 5µA @ 600V | -50°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBL | KBL |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1PH 4A 600V GBL |
в производстве | Single Phase | Standard | 600V | 3A | 1.1V @ 4A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | GBL |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1PH 4A 1000V GBL |
в производстве | Single Phase | Standard | 1kV | 3A | 1.1V @ 4A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | GBL |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 600V 2.0A D-44 |
в производстве | Single Phase | Standard | 600V | 2A | 1V @ 1A | 10µA @ 600V | -40°C ~ 150°C (TJ) | Through Hole | 4-SIP, D-44 | D-44 |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 6A 800V GBPC6 |
в производстве | Single Phase | Standard | 800V | 3A | 1V @ 3A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-6 | GBPC6 |
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Vishay Semiconductor Diodes Division |
DIODE 25A 600V GSIB-5S |
в производстве | Single Phase | Standard | 600V | 3.5A | 1V @ 12.5A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | GSIB-5S |
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Vishay Semiconductor Diodes Division |
DIODE 25A 800V GSIB-5S |
в производстве | Single Phase | Standard | 800V | 3.5A | 1V @ 12.5A | 10µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | GSIB-5S |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 4A 100V KBU |
в производстве | Single Phase | Standard | 100V | 4A | 1V @ 4A | 5µA @ 100V | -50°C ~ 150°C (TJ) | Through Hole | 4-ESIP, KBU | KBU |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 800V 35A PB |
в производстве | Single Phase | Standard | 800V | 35A | 1.1V @ 17.5A | 10µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP, PB | isoCINK+™ PB |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 800V 40A PB |
в производстве | Single Phase | Standard | 800V | 40A | 1.1V @ 20A | 10µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP, PB | isoCINK+™ PB |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 8A 400V KBU |
в производстве | Single Phase | Standard | 400V | 8A | 1V @ 8A | 10µA @ 400V | -50°C ~ 150°C (TJ) | Through Hole | 4-ESIP, KBU | KBU |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 25A 200V GBPC |
в производстве | Single Phase | Standard | 200V | 25A | 1.1V @ 12.5A | 5µA @ 200V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 25A 200V GBPC-W |
в производстве | Single Phase | Standard | 200V | 25A | 1.1V @ 12.5A | 5µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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Vishay Semiconductor Diodes Division |
DIODE 1PH 25A 1000V GBPC |
в производстве | Single Phase | Standard | 1kV | 25A | 1.1V @ 12.5A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 35A 600V GBPC |
в производстве | Single Phase | Standard | 600V | 35A | 1.1V @ 17.5A | 5µA @ 600V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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Vishay Semiconductor Diodes Division |
RECT BRIDGE 3-PHA 1200V 35A D-63 |
в производстве | Three Phase | Standard | 1.2kV | 35A | - | 10µA @ 1200V | -55°C ~ 150°C (TJ) | QC Terminal | 5-Square, D-63 | D-63 |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1A 800V 4SMD |
в производстве | Single Phase | Standard | 800V | 1A | 1.1V @ 1A | 5µA @ 800V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-SMD, Gull Wing | DFS |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1.5A 400V 4SMD |
в производстве | Single Phase | Standard | 400V | 1.5A | 1.1V @ 1.5A | 5µA @ 400V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-SMD, Gull Wing | DFS |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1.5A 1000V 4SMD |
в производстве | Single Phase | Standard | 1kV | 1.5A | 1.1V @ 1.5A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-SMD, Gull Wing | DFS |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1A 400V 4SMD |
в производстве | Single Phase | Standard | 400V | 1A | 1.1V @ 1A | 5µA @ 400V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-SMD, Gull Wing | DFS |
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Vishay Semiconductor Diodes Division |
DIODE 0.5A 200V 150NS MBS |
в производстве | Three Phase | Standard | 200V | 500mA | 1.25V @ 400mA | 5µA @ 200V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-269AA, 4-BESOP | TO-269AA (MBS) |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1A 200V 50NS 4SMD |
в производстве | Single Phase | Standard | 200V | 1A | 1.05V @ 1A | 5µA @ 200V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-SMD, Gull Wing | DFS |
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Vishay Semiconductor Diodes Division |
DIODE BRIDGE 1A 400V WOG |
в производстве | Single Phase | Standard | 400V | 1A | 1V @ 1A | 10µA @ 400V | -40°C ~ 125°C (TJ) | Through Hole | 4-Circular, WOG | WOG |
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Vishay Semiconductor Diodes Division |
DIODE BRIDGE 0.9A 400V WOG |
в производстве | Single Phase | Standard | 400V | 900mA | 1V @ 900mA | 10µA @ 400V | -40°C ~ 125°C (TJ) | Through Hole | 4-Circular, WOG | WOG |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1A 600V 4DIP |
в производстве | Single Phase | Standard | 600V | 1A | 1.1V @ 1A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.300", 7.62mm) | DFM |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1A 100V 4DIP |
в производстве | Single Phase | Standard | 100V | 1A | 1.1V @ 1A | 5µA @ 100V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.300", 7.62mm) | DFM |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1A 100V 4SMD |
в производстве | Single Phase | Standard | 100V | 1A | 1.1V @ 1A | 5µA @ 100V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-SMD, Gull Wing | DFS |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 4A 50V KBL |
в производстве | Single Phase | Standard | 50V | 4A | 1.1V @ 4A | 5µA @ 50V | -50°C ~ 150°C (TJ) | Through Hole | 4-ESIP, KBL | KBL |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1PH 4A 200V GBL |
в производстве | Single Phase | Standard | 200V | 3A | 1.1V @ 4A | 5µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | GBL |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1PH 4A 800V GBL |
в производстве | Single Phase | Standard | 800V | 3A | 1V @ 2A | 10µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | GBL |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 6A 200V KBU |
в производстве | Single Phase | Standard | 200V | 6A | 1V @ 6A | 5µA @ 200V | -50°C ~ 150°C (TJ) | Through Hole | 4-ESIP, KBU | KBU |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 1000V 1.9A D-37 |
в производстве | Single Phase | Standard | 1kV | 1.9A | 1.1V @ 1.9A | 10µA @ 1000V | -40°C ~ 150°C (TJ) | Through Hole | 4-SIP, 2KBB | 2KBB |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 400V 2.0A D-44 |
в производстве | Single Phase | Standard | 400V | 2A | 1V @ 1A | 10µA @ 400V | -40°C ~ 150°C (TJ) | Through Hole | 4-SIP, D-44 | D-44 |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 8A 800V GBU |
в производстве | Single Phase | Standard | 800V | 3.9A | 1V @ 8A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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Vishay Semiconductor Diodes Division |
DIODE GPP 8A 800V GPP INLINE GBU |
в производстве | Single Phase | Standard | 800V | 3.9A | 1V @ 8A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 4A 400V KBU |
в производстве | Single Phase | Standard | 400V | 4A | 1V @ 4A | 5µA @ 400V | -50°C ~ 150°C (TJ) | Through Hole | 4-ESIP, KBU | KBU |
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Vishay Semiconductor Diodes Division |
DIODE 4A 600V KBU |
в производстве | Single Phase | Standard | 600V | 4A | 1V @ 4A | 5µA @ 600V | -50°C ~ 150°C (TJ) | Through Hole | 4-ESIP, KBU | KBU |
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Vishay Semiconductor Diodes Division |
DIODE 4A 800V KBU |
в производстве | Single Phase | Standard | 800V | 4A | 1V @ 4A | 5µA @ 800V | -50°C ~ 150°C (TJ) | Through Hole | 4-ESIP, KBU | KBU |
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Vishay Semiconductor Diodes Division |
MOD BRIDGE 1PH 6A D-72 |
в производстве | Single Phase | Standard | 100V | 6A | - | 10µA @ 100V | -40°C ~ 150°C (TJ) | Through Hole | 4-Square, D-72 | D-72 |
