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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 1200V 35A D-34A |
в производстве | Single Phase | Standard | 1.2kV | 35A | - | 10µA @ 1200V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, D-34 | D-34 |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 1600V 35A D-34A |
в производстве | Single Phase | Standard | 1.6kV | 35A | - | 10µA @ 1600V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, D-34 | D-34 |
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Vishay Semiconductor Diodes Division |
RECT BRIDGE 3-PHA 100V 35A D-63 |
в производстве | Three Phase | Standard | 100V | 35A | - | 10µA @ 100V | -55°C ~ 150°C (TJ) | QC Terminal | 5-Square, D-63 | D-63 |
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Vishay Semiconductor Diodes Division |
RECT BRIDGE 3-PHA 800V 35A D-63 |
в производстве | Three Phase | Standard | 800V | 35A | - | 10µA @ 800V | -55°C ~ 150°C (TJ) | QC Terminal | 5-Square, D-63 | D-63 |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1A 600V 4SMD |
в производстве | Single Phase | Standard | 600V | 1A | 1.1V @ 1A | 5µA @ 600V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-SMD, Gull Wing | DFS |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1A 800V 4SMD |
в производстве | Single Phase | Standard | 800V | 1A | 1.1V @ 1A | 5µA @ 800V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-SMD, Gull Wing | DFS |
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Vishay Semiconductor Diodes Division |
RECT BRIDGE .5A 400V TO-269AA |
в производстве | Single Phase | Standard | 400V | 500mA | 1V @ 400mA | 5µA @ 400V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-269AA, 4-BESOP | TO-269AA (MBS) |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 0.5A TO269AA |
в производстве | Single Phase | Standard | 200V | 500mA | 1V @ 400mA | 5µA @ 200V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-269AA, 4-BESOP | TO-269AA (MBS) |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1A 400V 4DIP |
в производстве | Single Phase | Standard | 400V | 1A | 1.1V @ 1A | 5µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.300", 7.62mm) | DFM |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1A 800V 4DIP |
в производстве | Single Phase | Standard | 800V | 1A | 1.1V @ 1A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.300", 7.62mm) | DFM |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1A 200V 4DIP |
в производстве | Single Phase | Standard | 200V | 1A | 1.1V @ 1A | 5µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.300", 7.62mm) | DFM |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1A 50V 4SMD |
в производстве | Single Phase | Standard | 50V | 1A | 1.1V @ 1A | 5µA @ 50V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-SMD, Gull Wing | DFS |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1A 200V 50NS 4DIP |
в производстве | Single Phase | Standard | 200V | 1A | 1.05V @ 1A | 5µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.300", 7.62mm) | DFM |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1PH 4A 600V GPP GBU |
в производстве | Single Phase | Standard | 600V | 4A | 1V @ 4A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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Vishay Semiconductor Diodes Division |
DIODE GPP 8A 200V GPP INLINE GBU |
в производстве | Single Phase | Standard | 200V | 3.9A | 1V @ 8A | 5µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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Vishay Semiconductor Diodes Division |
MOD BRIDGE 1PH 6A D-72 |
в производстве | Single Phase | Standard | 1kV | 6A | 1.2V @ 3A | 10mA @ 1000V | -40°C ~ 150°C (TJ) | Through Hole | 4-Square, D-72 | D-72 |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 8A 200V KBU |
в производстве | Single Phase | Standard | 200V | 8A | 1V @ 8A | 10µA @ 200V | -50°C ~ 150°C (TJ) | Through Hole | 4-ESIP, KBU | KBU |
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Vishay Semiconductor Diodes Division |
DIODE 6A 600V KBU |
в производстве | Single Phase | Standard | 600V | 6A | 1V @ 6A | 5µA @ 600V | -50°C ~ 150°C (TJ) | Through Hole | 4-ESIP, KBU | KBU |
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Vishay Semiconductor Diodes Division |
DIODE 1PH 15A 200V GBPC |
в производстве | Single Phase | Standard | 200V | 15A | 1.1V @ 7.5A | 5µA @ 200V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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Vishay Semiconductor Diodes Division |
DIODE 1PH 25A 1000V GBPC-W |
в производстве | Single Phase | Standard | 1kV | 25A | 1.1V @ 12.5A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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Vishay Semiconductor Diodes Division |
DIODE 1PH 15A 50V GBPC |
в производстве | Single Phase | Standard | 50V | 15A | 1.1V @ 7.5A | 5µA @ 50V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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Vishay Semiconductor Diodes Division |
DIODE 1PH 25A 800V GBPC-W |
в производстве | Single Phase | Standard | 800V | 25A | 1.1V @ 12.5A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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Vishay Semiconductor Diodes Division |
DIODE 1PH 15A 600V GBPC-W |
в производстве | Single Phase | Standard | 600V | 15A | 1.1V @ 7.5A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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Vishay Semiconductor Diodes Division |
DIODE 1PH 15A 400V GBPC-W |
в производстве | Single Phase | Standard | 400V | 15A | 1.1V @ 7.5A | 5µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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Vishay Semiconductor Diodes Division |
DIODE 1PH 15A 800V GBPC-W |
в производстве | Single Phase | Standard | 800V | 15A | 1.1V @ 7.5A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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Vishay Semiconductor Diodes Division |
DIODE 1PH 15A 400V GBPC |
в производстве | Single Phase | Standard | 400V | 15A | 1.1V @ 7.5A | 5µA @ 400V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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Vishay Semiconductor Diodes Division |
DIODE 1PH 15A 1000V GBPC |
в производстве | Single Phase | Standard | 1kV | 15A | 1.1V @ 7.5A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 25A 50V GBPC |
в производстве | Single Phase | Standard | 50V | 25A | 1.1V @ 12.5A | 5µA @ 50V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 35A 1000V GBPCW |
в производстве | Single Phase | Standard | 1kV | 35A | 1.1V @ 17.5A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 35A 100V GBPC |
в производстве | Single Phase | Standard | 100V | 35A | 1.1V @ 17.5A | 5µA @ 100V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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Vishay Semiconductor Diodes Division |
RECT BRIDGE 1-PH 1200V 35A GBPCA |
в производстве | Single Phase | Standard | 1.2kV | 35A | - | 2mA @ 1200V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC-A | GBPC-A |
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Vishay Semiconductor Diodes Division |
RECT BRIDGE 1-PH 1000V 35A GBPCA |
в производстве | Single Phase | Standard | 1kV | 35A | - | 2mA @ 1000V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC-A | GBPC-A |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 400V 35A D-34A |
в производстве | Single Phase | Standard | 400V | 35A | - | 10µA @ 400V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, D-34 | D-34 |
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Vishay Semiconductor Diodes Division |
RECT BRIDGE 3-PHA 400V 35A D-63 |
в производстве | Three Phase | Standard | 400V | 35A | - | 10µA @ 400V | -55°C ~ 150°C (TJ) | QC Terminal | 5-Square, D-63 | D-63 |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1PH 4A 200V GBU |
в производстве | Single Phase | Standard | 200V | 2.3A | 1V @ 2A | 5µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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Vishay Semiconductor Diodes Division |
RECT BRIDGE 600V 40A POWER BRIDGE |
в производстве | Single Phase | Standard | 600V | 40A | 1.1V @ 20A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP, PB | isoCINK+™ PB |
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Vishay Semiconductor Diodes Division |
RECT BRIDGE 1-PH 400V 25A GBPC-A |
в производстве | Single Phase | Standard | 400V | 25A | - | 2mA @ 400V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC-A | GBPC-A |
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Vishay Semiconductor Diodes Division |
MOD IGBT 1600V 75A 3-PHASE MTP |
в производстве | Three Phase | Standard | 1.6kV | 75A | - | - | -40°C ~ 150°C (TJ) | Chassis Mount | MTK | MTK |
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Vishay Semiconductor Diodes Division |
RECT BRIDGE 1A 400V MBLS |
в производстве | Single Phase | Standard | 400V | 1A | 950mV @ 400mA | 5µA @ 400V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-SMD, Gull Wing | 4-SMD |
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Vishay Semiconductor Diodes Division |
RECT BRIDGE 1A 800V MBLS |
в производстве | Single Phase | Standard | 800V | 1A | 950mV @ 400mA | 5µA @ 800V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-SMD, Gull Wing | 4-SMD |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1.5A 200V 4SMD |
в производстве | Single Phase | Standard | 200V | 1.5A | 1.1V @ 1.5A | 5µA @ 200V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-SMD, Gull Wing | DFS |
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Vishay Semiconductor Diodes Division |
DIODE BRIDGE 0.9A 65V DIP |
в производстве | Single Phase | Standard | 65V | 900mA | 1V @ 900mA | 10µA @ 65V | -40°C ~ 125°C (TJ) | Through Hole | 4-EDIP (0.300", 7.62mm) | DFM |
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Vishay Semiconductor Diodes Division |
DIODE BRIDGE 0.9A 600V DIP |
в производстве | Single Phase | Standard | 600V | 900mA | 1V @ 900mA | 10µA @ 600V | -40°C ~ 125°C (TJ) | Through Hole | 4-EDIP (0.300", 7.62mm) | DFM |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1A 400V 4DIP |
в производстве | Single Phase | Standard | 400V | 1A | 1.1V @ 1A | 5µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.300", 7.62mm) | DFM |
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Vishay Semiconductor Diodes Division |
DIODE FAST .5A 200V TO-269AA |
в производстве | Three Phase | Standard | 200V | 500mA | 1.25V @ 400mA | 5µA @ 200V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-269AA, 4-BESOP | TO-269AA (MBS) |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 600V 1.9A D-37 |
в производстве | Single Phase | Standard | 600V | 1.9A | 1.1V @ 1.9A | 10µA @ 600V | -40°C ~ 150°C (TJ) | Through Hole | 4-SIP, 2KBB | 2KBB |
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Vishay Semiconductor Diodes Division |
DIODE 6A 200V GSIB-5S |
в производстве | Single Phase | Standard | 200V | 2.8A | 950mV @ 3A | 10µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | GSIB-5S |
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Vishay Semiconductor Diodes Division |
DIODE 6A 600V GSIB-5S |
в производстве | Single Phase | Standard | 600V | 2.8A | 950mV @ 3A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | GSIB-5S |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 25A 800V BU |
в производстве | Single Phase | Standard | 800V | 25A | 1.05V @ 12.5A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU | isoCINK+™ BU |
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Vishay Semiconductor Diodes Division |
BRIDGE RECT 25A 800V GSIB-5S |
в производстве | Single Phase | Standard | 800V | 25A | 1V @ 12.5A | 10µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | GSIB-5S |
