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Производители для Оптоизоляторы - транзистор, фотогальванический выход

Broadcom Limited
CEL (California Eastern Laboratories)
Everlight Electronics
Infineon Technologies
Isocom
IXYS Integrated Circuits Division
Lite-On, Inc.
Lumex, Inc.
ON Semiconductor
Panasonic
QT Brightek
Renesas Electronics America
Sharp Microelectronics
Skyworks Solutions, Inc.
Socle Technology Corporation
Standex-Meder Electronics
Taiwan Semiconductor
Toshiba Semiconductor and Storage
TT Electronics/Optek Technology
Vishay
Weidmüller
номер части Производитель / Марка Краткое описание Статус деталиКоличество каналовНапряжение - изоляцияКоэффициент передачи в реальном времени (мин.)Коэффициент передачи тока (макс.)Время включения / выключения (Тип)Время нарастания / падения (Тип)Тип вводаТип выходаНапряжение - выход (макс.)Текущий - выход / каналНапряжение - Вперед (Vf) (Тип)Current - DC Forward (If) (Max)Vce Saturation (Макс.)Рабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
HCPL-073L-500E
 Broadcom Limited OPTOISO 3.75KV 2CH DARLNG 8-SO в производстве23750Vrms300% @ 1.6mA2600% @ 1.6mA25µs, 50µs
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DCDarlington7V60mA1.5V20mA
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0°C ~ 70°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
HCPL-M452-000E
 Broadcom Limited OPTOISO 3.75KV TRANSISTOR 6SOIC в производстве13750Vrms20% @ 16mA50% @ 16mA200ns, 600ns
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DCTransistor20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж6-SOIC (0.173", 4.40mm Width), 5 Leads5-SO
HCPL-4534-500E
 Broadcom Limited OPTOISO 3.75KV 2CH TRANSISTOR 8SMD в производстве23750Vrms15% @ 16mA50% @ 16mA200ns, 600ns
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DCTransistor20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж8-SMD, Gull Wing8-SMD
HCPL-2502-000E
 Broadcom Limited OPTOISO 3.75KV TRANSISTOR W/BASE 8DIP в производстве13750Vrms15% @ 16mA22% @ 16mA200ns, 600ns
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DCTransistor with Base20V8mA1.5V25mA
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-55°C ~ 100°CThrough Hole8-DIP (0.300", 7.62mm)8-DIP
HCPL-2503-000E
 Broadcom Limited OPTOISO 3.75KV TRANSISTOR W/BASE 8DIP в производстве13750Vrms15% @ 8mA
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1µs, 1.5µs
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DCTransistor with Base7V8mA1.5V25mA
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-55°C ~ 100°CThrough Hole8-DIP (0.300", 7.62mm)8-DIP
HCPL-0534-500E
 Broadcom Limited OPTOISO 3.75KV 2CH TRANSISTOR 8SOIC в производстве23750Vrms15% @ 16mA50% @ 16mA200ns, 600ns
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DCTransistor20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
HCPL-3760-500E
 Broadcom Limited OPTOISOLATOR 3.75KV DARL 8DIP GW в производстве13750Vrms
-
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4.5µs, 8µs14µs, 0.4µsAC, DCDarlington20V30mA
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-
-
-40°C ~ 85°CSMD Поверхностный монтаж8-SMD, Gull Wing8-DIP Gull Wing
HCPL-J454-000E
 Broadcom Limited OPTOISO 3.75KV TRANSISTOR 8DIP в производстве13750Vrms19% @ 16mA60% @ 16mA500ns, 800ns
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DCTransistor20V8mA1.59V25mA
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-55°C ~ 100°CThrough Hole8-DIP (0.300", 7.62mm)8-DIP
HCPL-M454-000E
 Broadcom Limited OPTOISO 3.75KV TRANSISTOR 6SOIC в производстве13750Vrms25% @ 16mA60% @ 16mA200ns, 300ns
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DCTransistor20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж6-SOIC (0.173", 4.40mm Width), 5 Leads5-SO
ACPL-M49U-000E
 Broadcom Limited OPTOISOLATOR 3.75KV TRANSISTOR в производстве13750Vrms32% @ 10mA80% @ 10mA20µs, 20µs (Max)
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DCTransistor20V8mA1.5V20mA
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-40°C ~ 125°CSMD Поверхностный монтаж6-SOIC (0.173", 4.40mm Width), 5 Leads5-SO
HCPL-4731-500E
 Broadcom Limited OPTOISO 3.75KV 2CH DARL 8-DIP GW в производстве23750Vrms600% @ 500µA8000% @ 500µA3µs, 34µs
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DCDarlington18V60mA1.25V10mA
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0°C ~ 70°CSMD Поверхностный монтаж8-SMD, Gull Wing8-DIP Gull Wing
HCPL-M701-000E
 Broadcom Limited OPTOISO 3.75KV DARLINGTON 6SOIC в производстве13750Vrms500% @ 1.6mA2600% @ 1.6mA500ns, 1µs
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DCDarlington18V60mA1.4V20mA
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-40°C ~ 85°CSMD Поверхностный монтаж6-SOIC (0.173", 4.40mm Width), 5 Leads5-SO
ACPL-K453-000E
 Broadcom Limited OPTOISOLATOR 5KV TRANSISTOR 8-SO в производстве15000Vrms19% @ 16mA50% @ 16mA200ns, 600ns
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DCTransistor20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж8-SOIC (0.268", 6.81mm Width)8-SO
HCPL-2530
 Broadcom Limited OPTOISO 3.75KV 2CH TRANSISTOR 8DIP в производстве23750Vrms7% @ 16mA50% @ 16mA200ns, 1.3µs
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DCTransistor20V8mA1.5V25mA
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-55°C ~ 100°CThrough Hole8-DIP (0.300", 7.62mm)8-DIP
HCPL-4701-000E
 Broadcom Limited OPTOISO 3.75KV DARLINGTON 8-DIP в производстве13750Vrms600% @ 500µA8000% @ 500µA3µs, 34µs
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DCDarlington with Base18V60mA1.25V10mA
-
0°C ~ 70°CThrough Hole8-DIP (0.300", 7.62mm)8-DIP
HCNW4562-000E
 Broadcom Limited OPTOISO 5KV TRANSISTOR W/BASE 8DIP в производстве15000Vrms
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-
-
-
DCTransistor with Base20V8mA1.6V25mA1.25V-40°C ~ 85°CThrough Hole8-DIP (0.400", 10.16mm)8-DIP
ACPL-M43U-000E
 Broadcom Limited OPTOISOLATOR 3.75KV TRANSISTOR 5-SO в производстве13750Vrms32% @ 10mA80% @ 10mA200ns, 300ns
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DCTransistor20V8mA1.5V20mA
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-40°C ~ 125°CSMD Поверхностный монтаж6-SOIC (0.173", 4.40mm Width), 5 Leads5-SO
ACNT-H511-000E
 Broadcom Limited 15MM OPTOCOUPLER 1MBD в производстве17500Vrms31% @ 12mA80% @ 12mA150ns, 400ns
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DCTransistor24V12mA1.45V20mA
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-40°C ~ 105°CSMD Поверхностный монтаж8-SOIC (0.535", 13.60mm Width)8-SO Stretched
HCPL-6730
 Broadcom Limited OPTOISO 1.5KV 2CH DARLNG 20-LCCC в производстве21500VDC200% @ 5mA
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2µs, 8µs
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DCDarlington20V40mA1.4V10mA110mV-55°C ~ 125°CSMD Поверхностный монтаж20-CLCC20-LCCC
8302401XA
 Broadcom Limited OPTOISO 1.5KV 4CH DARL 16-SMD GW в производстве41500VDC200% @ 5mA
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2µs, 8µs
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DCDarlington20V40mA1.4V10mA110mV-55°C ~ 125°CSMD Поверхностный монтаж16-SMD, Gull Wing16-SMD Gull Wing
HCPL-5701
 Broadcom Limited OPTOISO 1.5KV DARLINGTON 8-DIP в производстве11500VDC200% @ 5mA
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2µs, 8µs
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DCDarlington20V40mA1.4V10mA110mV-55°C ~ 125°CThrough Hole8-DIP (0.300", 7.62mm)8-DIP
HCPL-6531
 Broadcom Limited OPTOISO 1.5KV TRANSISTOR W/BASE CLCC в производстве21500VDC9% @ 16mA
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400ns, 1µs
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DCTransistor with Base20V8mA1.55V20mA
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-55°C ~ 125°CSMD Поверхностный монтаж20-CLCC20-LCC
ACPL-5730L
 Broadcom Limited OPTOISO 1.5KV 2CH DARLNG 8-DIP в производстве21500VDC200% @ 5mA
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2µs, 6µs
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DCDarlington20V40mA1.4V10mA
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-55°C ~ 125°CThrough Hole8-CDIP (0.300", 7.62mm)8-DIP
5962-8978501PA
 Broadcom Limited OPTOISO 1.5KV 2CH DARLNG 8-DIP в производстве21500VDC200% @ 5mA
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2µs, 8µs
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DCDarlington20V40mA1.4V10mA110mV-55°C ~ 125°CThrough Hole8-DIP (0.300", 7.62mm)8-DIP
HCPL-5760
 Broadcom Limited OPTOISO 1.5KV DARLINGTON 8-DIP в производстве11500VDC
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4µs, 8µs10µs, 0.5µsAC, DCDarlington20V40mA
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-
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-55°C ~ 125°CThrough Hole8-DIP (0.300", 7.62mm)8-DIP
HCPL-6550
 Broadcom Limited OPTOISO 1.5KV TRANSISTOR W/BASE 16DFF в производстве41500VDC9% @ 16mA
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400ns, 1µs
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DCTransistor with Base20V8mA1.55V20mA
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-55°C ~ 125°CSMD Поверхностный монтаж16-Flatpack16-Flatpack
HCPL-6551
 Broadcom Limited OPTOISO 1.5KV TRANSISTOR W/BASE 16DFF в производстве41500VDC9% @ 16mA
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400ns, 1µs
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DCTransistor with Base20V8mA1.55V20mA
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-55°C ~ 125°CSMD Поверхностный монтаж16-Flatpack16-Flatpack
HCPL-M453#500
 Broadcom Limited OPTOISO 3.75KV TRANSISTOR 6SOIC в производстве13750Vrms20% @ 16mA50% @ 16mA200ns, 600ns
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DCTransistor20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж6-SOIC (0.173", 4.40mm Width), 5 Leads
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HCPL-0453-500E
 Broadcom Limited OPTOISOLATOR 3.75KV TRANSISTOR 8-SO в производстве13750Vrms15% @ 16mA
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1µs, 1µs (Max)
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DCTransistor20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
HCPL-0501-500E
 Broadcom Limited OPTOISO 3.75KV TRANSISTOR W/BASE 8SO в производстве13750Vrms15% @ 16mA
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200ns, 600ns
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DCTransistor with Base20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
HCPL-4504-500E
 Broadcom Limited OPTOISO 3.75KV TRANSISTOR 8DIPGW в производстве13750Vrms25% @ 16mA60% @ 16mA200ns, 300ns
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DCTransistor20V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж8-SMD, Gull Wing8-DIP Gull Wing
HCNW4503-500E
 Broadcom Limited OPTOISO 5KV TRANSISTOR 8DIP GULL WING в производстве15000Vrms15% @ 16mA
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1µs, 1µs (Max)
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DCTransistor20V8mA1.68V25mA
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-55°C ~ 85°CSMD Поверхностный монтаж8-SMD, Gull Wing8-DIP Gull Wing
ACPL-M49T-500E
 Broadcom Limited OPTOISOLATOR 4KV TRANSISTOR 5-SO в производстве14000Vrms32% @ 10mA80% @ 10mA
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DCTransistor20V8mA1.5V20mA
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-40°C ~ 125°CSMD Поверхностный монтаж6-SOIC (0.173", 4.40mm Width), 5 Leads5-SO
HCPL-053L-500E
 Broadcom Limited OPTOISOLTR 3.75KV 2CH TRANSISTOR 8-SO в производстве23750Vrms19% @ 16mA50% @ 16mA200ns, 600ns
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DCTransistor7V8mA1.5V25mA
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-55°C ~ 100°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
HCPL-3700-500E
 Broadcom Limited OPTOISOLATOR 3.75KV DARL 8DIP GW в производстве13750Vrms
-
-
4µs, 10µs20µs, 0.3µsAC, DCDarlington20V30mA
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-
-
-40°C ~ 85°CSMD Поверхностный монтаж8-SMD, Gull Wing8-DIP Gull Wing
ACPL-K54L-500E
 Broadcom Limited OPTOISOLATOR 5KV 2CH TRANSISTOR 8-SO в производстве25000Vrms93% @ 3mA200% @ 3mA200ns, 380ns
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DCTransistor24V8mA1.5V20mA
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-40°C ~ 105°CSMD Поверхностный монтаж8-SOIC (0.268", 6.81mm Width)8-SO Stretched
HCPL-073A-500E
 Broadcom Limited OPTOISO 3.75KV 2CH DARLNG 8-SO в производстве23750Vrms600% @ 500µA8000% @ 500µA3µs, 34µs
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DCDarlington18V60mA1.25V5mA
-
0°C ~ 70°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
HCNW4503-000E
 Broadcom Limited OPTOISOLATOR 5KV TRANSISTOR 8DIP в производстве15000Vrms15% @ 16mA
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1µs, 1µs (Max)
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DCTransistor20V8mA1.68V25mA
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-55°C ~ 85°CThrough Hole8-DIP (0.400", 10.16mm)8-DIP
HCPL-073L-000E
 Broadcom Limited OPTOISO 3.75KV 2CH DARLNG 8-SO в производстве23750Vrms300% @ 1.6mA2600% @ 1.6mA25µs, 50µs
-
DCDarlington7V60mA1.5V20mA
-
0°C ~ 70°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
6N140A
 Broadcom Limited OPTOISO 1.5KV 4CH DARLNG 16-DIP в производстве41500VDC200% @ 5mA
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2µs, 8µs
-
DCDarlington20V40mA1.4V10mA110mV-55°C ~ 125°CThrough Hole16-DIP (0.300", 7.62mm)16-DIP
6N140A#300
 Broadcom Limited OPTOISO 1.5KV 4CH DARL 16-DIP GW в производстве41500VDC200% @ 5mA
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2µs, 8µs
-
DCDarlington20V40mA1.4V10mA110mV-55°C ~ 125°CSMD Поверхностный монтаж16-SMD, Gull Wing16-DIP Gull Wing
HCPL-4502-000E
 Broadcom Limited OPTOISOLATOR 3.75KV TRANSISTOR 8-DIP в производстве13750Vrms19% @ 16mA50% @ 16mA200ns, 600ns
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DCTransistor20V8mA1.5V25mA
-
-55°C ~ 100°CThrough Hole8-DIP (0.300", 7.62mm)8-DIP
ACPL-M49T-000E
 Broadcom Limited OPTOISOLATOR 4KV TRANSISTOR 5-SO в производстве14000Vrms32% @ 10mA80% @ 10mA
-
-
DCTransistor20V8mA1.5V20mA
-
-40°C ~ 125°CSMD Поверхностный монтаж6-SOIC (0.173", 4.40mm Width), 5 Leads5-SO
4N25-000E
 Broadcom Limited OPTOISO 2.5KV TRANSISTOR W/BASE 6DIP в производстве12500Vrms20% @ 10mA
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3µs, 3µsDCTransistor with Base30V100mA1.2V80mA500mV-55°C ~ 100°CThrough Hole6-DIP (0.300", 7.62mm)6-DIP
CNY17-3-000E
 Broadcom Limited OPTOISO 5KV TRANSISTOR W/BASE 6DIP в производстве15000Vrms100% @ 10mA200% @ 10mA
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5µs, 5µsDCTransistor with Base70V150mA1.4V60mA300mV-55°C ~ 100°CThrough Hole6-DIP (0.300", 7.62mm)6-DIP
ACFL-5212T-060E
 Broadcom Limited OPTOISO 5KV 2CH TRANS в производстве25000Vrms32% @ 10mA100% @ 10mA20µs, 20µs (Max)
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DCTransistor20V8mA1.5V20mA
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-40°C ~ 125°CSMD Поверхностный монтаж12-BSOP (0.295", 7.50mm Width)12-SO
ACFL-5211T-000E
 Broadcom Limited OPTOISO 5KV 2CH TRANS в производстве25000Vrms32% @ 10mA100% @ 10mA150ns, 500ns
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DCTransistor20V8mA1.55V20mA
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-40°C ~ 125°CSMD Поверхностный монтаж12-SOIC (0.295", 7.50mm Width)12-SO
ACFL-5211T-060E
 Broadcom Limited OPTOISO 5KV 2CH TRANS в производстве25000Vrms32% @ 10mA100% @ 10mA150ns, 500ns
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DCTransistor20V8mA1.55V20mA
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-40°C ~ 125°CSMD Поверхностный монтаж12-SOIC (0.295", 7.50mm Width)12-SO
HCPL-0730
 Broadcom Limited OPTOISO 3.75KV 2CH DARLNG 8-SO в производстве23750Vrms300% @ 1.6mA2600% @ 1.6mA5µs, 10µs
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DCDarlington7V60mA1.4V12mA100mV0°C ~ 70°CSMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
HCPL-5500
 Broadcom Limited OPTOISO 1.5KV TRANSISTOR W/BASE 8DIP в производстве11500VDC9% @ 16mA
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400ns, 1µs
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DCTransistor with Base20V8mA1.55V20mA
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-55°C ~ 125°CThrough Hole8-DIP (0.300", 7.62mm)8-DIP
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